CN102469700B - Method for manufacturing circuit board and circuit board - Google Patents
Method for manufacturing circuit board and circuit board Download PDFInfo
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- CN102469700B CN102469700B CN201010544633.0A CN201010544633A CN102469700B CN 102469700 B CN102469700 B CN 102469700B CN 201010544633 A CN201010544633 A CN 201010544633A CN 102469700 B CN102469700 B CN 102469700B
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- substrate
- adhesion layer
- seed layer
- layer
- circuit board
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- 238000000034 method Methods 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 238000005234 chemical deposition Methods 0.000 claims abstract description 9
- 238000005289 physical deposition Methods 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 33
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 33
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- 238000010884 ion-beam technique Methods 0.000 claims description 15
- 238000003801 milling Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 7
- 238000009849 vacuum degassing Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000013527 degreasing agent Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 10
- 239000012528 membrane Substances 0.000 abstract description 3
- 238000007781 pre-processing Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000007747 plating Methods 0.000 description 9
- 230000005611 electricity Effects 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000007872 degassing Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
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- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
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- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Landscapes
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention provides a method for manufacturing a circuit board and the circuit board. The method comprises the following steps of: preprocessing a substrate; manufacturing a seed layer on the substrate; and manufacturing a conducting circuit on the seed layer, wherein the seed layer comprises an adhesion layer and a conducting membrane; and a method for manufacturing the seed layer comprises the following steps of: A, manufacturing the adhesion layer on the surface of the substrate; and B, manufacturing the conducting membrane on the surface of the adhesion layer by a chemical deposition technology and/or a physical deposition technology. The seed layer manufactured by the method has high bonding force with the substrate and a smooth surface, and is low in manufacturing cost. The bonding force between the substrate and the seed layer of the circuit board can be over 7N/cm, and loss of the conducting circuit in the process of transmitting high-frequency signals is small.
Description
Technical field
The present invention relates to a kind of method and circuit board of making circuit board.
Background technology
Along with the development of electronic technology, printed circuit board (PCB) has been substituted the connected mode of conditional electronic components and parts, is widely used in electronic product.At present, manufacturing enterprise adopts subtractive process to manufacture printed circuit board (PCB) more, however subtractive process complex process, and can produce a large amount of waste water and pollutant in production process, be unfavorable for environmental protection.For this reason, people have developed addition process and have manufactured printed circuit board (PCB).
Addition process is in substrate surface conductive metal deposition selectively, thereby forms conducting wire (conductive layer).The manufacturing process flow of addition process generally includes: substrate → Seed Layer → conducting wire → electricity gold layer → solder mask → other handling process.Wherein, Seed Layer is the necessary condition when making substrate meet conducting wire in subsequent treatment to electroplate and the conductive layer made at substrate surface requires Seed Layer smooth surface, and with substrate can be good combination.In above-mentioned technological process, Seed Layer can obtain by two kinds of modes:
First electroless copper plating (PHT) technology, the Seed Layer of electroless copper plating fabrication techniques is to be connected with physics mode with substrate, in actual production process, in order to improve the adhesion between Seed Layer and substrate, before electroless copper plating technique, to increase the roughness of substrate, this must make the roughness that is attached to its surperficial Seed Layer increase, thereby the roughness on the surface, conducting wire on Seed Layer surface is also increased, and then causes the increase of high-frequency signal loss.In addition,, for the adhesion between Seed Layer and substrate can be met design requirement, the selectable baseplate material of electroless copper plating fabrication techniques Seed Layer is limited in scope.Owing to there is above-mentioned defect, limit electroless copper plating technology and further applied in field of circuit boards.
It two is magnetron sputtering techniques, the Seed Layer that magnetron sputtering technique is made and substrate can reach the combination of atom magnitude, therefore, do not need the roughness that increases substrate surface just can make Seed Layer and substrate obtain good combination, this has expanded the range of choice of baseplate material, and the Seed Layer smooth surface of making, the loss can reduce transmitting high-frequency signal time.Although magnetron sputtering technique has solved the existing above-mentioned defect of electroless copper plating technology, but, the operating cost of magnetron sputtering technique is higher, to prepare titanium copper composition metal conductive layer as example, prepares the required expense of copper layer conductive layer and accounts for the more than 90% of whole circuit board processing cost.In addition, magnetron sputtering technique is on the low side to the utilance of target, is no more than 40%.Because operating cost is higher, the promotion and application of magnetron sputtering technique in field of circuit boards are therefore limited.
Summary of the invention
Technical problem to be solved by this invention is exactly for the above-mentioned defect existing in prior art, and a kind of method of making circuit board Seed Layer is provided, and it can produce ganoid Seed Layer at low cost, and the adhesion of Seed Layer and substrate is good.
Solve the problems of the technologies described above the method that adopted technical scheme is this making circuit board, comprise the following steps: pretreated substrate; On described substrate, make Seed Layer; In described Seed Layer, make conducting wire, described Seed Layer comprises adhesion layer and conducting film, and makes by following steps: A. makes described adhesion layer on the surface of described substrate; B. make described conducting film by chemical deposition technique and/or physical deposition techniques on the surface of described adhesion layer.
Preferably, the thickness of described adhesion layer is the 1/100-1/3 of described Seed Layer gross thickness, is preferably 1/50-1/5; And/or the thickness of described adhesion layer is 10～100nm, is preferably 20～60nm.
Preferably, while making described adhesion layer in steps A: vacuum degree is 1 × 10
-3～9 × 10
-3mbar, is preferably 1 × 10
-3～5 × 10
-3mbar, voltage is 500～700V, argon flow amount is 300～450sccm, is preferably 350～400sccm.
Preferably, before implementation step A, described substrate is carried out to ion beam milling, preferably, in the time of described ion beam milling: vacuum degree 1 × 10
-4～9.0 × 10
-4mbar, is preferably 2 × 10
-4～5.0 × 10
-4mbar; Voltage 2000～2800V, is preferably 2200～2500V; Electric current 550～750mA, is preferably 600～700mA; Etching period 2～10min, is preferably 4～8min.
Preferably, before implementation step A, described substrate is carried out to vacuum degassing, preferably, in the time of described vacuum degassing: vacuum degree 1.0 × 10
-4～5.0 × 10
-4mbar, is preferably 1.0 × 10
-4～3.0 × 10
-4mbar; 100 DEG C～120 DEG C of temperature;
Preferably, the step of described pretreated substrate comprises: adopt deionized water to wash, and/or adopt alkaline degreaser to carry out oil removing, and/or Ultrasonic Cleaning, and/or dry.
More preferably, dry and carry out at the temperature of 100 DEG C～180 DEG C, and/or oven dry is dried in inert atmosphere.
Preferably, described adhesion layer is become by titanium, nickel, chromium or copper; And/or described conducting film is copper film or nickel film or tin film.
Preferably, the material of described substrate is resin substrate, glass fabric substrate or ceramic substrate.
Preferably, after steps A, detect the surface roughness of described adhesion layer; And/or, after step B, detect the surface roughness of described conducting film.
Preferably, utilize magnetron sputtering technique to make described adhesion layer on the surface of described substrate.
In addition, the present invention also provides a kind of circuit board, and this circuit board is the circuit board of making by making circuit board method provided by the invention, and wherein, described Seed Layer comprises strong bonded in the adhesion layer of substrate and is formed on the conducting film on described adhesion layer.
The present invention has following beneficial effect:
First, the method of making circuit board provided by the invention is in the time making Seed Layer, first make the adhesion layer of thickness lower than Seed Layer desired thickness by magnetron sputtering technique at substrate surface, the chemical deposition technique that recycling operating cost is lower and/or physical deposition techniques are made conducting film, thereby form Seed Layer.The method of this making Seed Layer, for utilizing magnetron sputtering technique making Seed Layer, has reduced cost of manufacture.And because adhesion layer is thinner, therefore can reduce the waste of target, be conducive to energy-saving and emission-reduction
Second, more than adhesion between substrate and adhesion layer can reach 7N/cm, the adhesion of conducting film and adhesion layer can reach tens, even go up hectonewton/cm, therefore, more than the adhesion of substrate and Seed Layer can reach 7N/cm, can meet the designing requirement of circuit board completely.
The 3rd, magnetron sputtering is made tack coat not to be needed the processing of substrate roughening, and the tie layer surface of making is smooth, thereby can obtain smooth conducting film, on the basis of smooth conducting film, can obtain smooth conducting wire.Therefore the conductive layer of, being made by method provided by the invention can reduce the loss of high-frequency signal.
The 4th, utilize magnetron sputtering technique to make adhesion layer, the scope of alternative baseplate material is wider, thereby overcomes the shortcoming that can select baseplate material narrow range when chemical deposition technique is made Seed Layer.
Similarly, circuit board provided by the invention, more than the adhesion of Seed Layer and substrate can reach 7N/cm, and conducting wire smooth surface, the loss in the time of transmitting high-frequency signal is little.
Brief description of the drawings
Fig. 1 is the making flow chart of the present embodiment circuit board.
Embodiment
The method of making circuit board provided by the invention, comprises the following steps: pretreated substrate; On described substrate, make Seed Layer; In described Seed Layer, make conducting wire, described Seed Layer comprises adhesion layer and conducting film, and makes by following steps: A. makes described adhesion layer on the surface of described substrate; B. make described conducting film by chemical deposition technique and/or physical deposition techniques on the surface of described adhesion layer.
In various embodiments of the present invention, preferably, the thickness of described adhesion layer is the 1/100-1/3 of described Seed Layer gross thickness, is preferably 1/50-1/5; And/or the thickness of described adhesion layer is 10～100nm, is preferably 20～60nm.
In various embodiments of the present invention, preferably, while making described adhesion layer in steps A: vacuum degree is 1 × 10
-3～9 × 10
-3mbar, is preferably 1 × 10
-3～5 × 10
-3mbar, voltage is 500～700V, argon flow amount is 300～450sccm, is preferably 350～400sccm.
In various embodiments of the present invention, preferably, before implementation step A, described substrate is carried out to ion beam milling, preferably, in the time of described ion beam milling: vacuum degree 1 × 10
-4～9.0 × 10
-4mbar, is preferably 2 × 10
-4～5.0 × 10
-4mbar; Voltage 2000～2800V, is preferably 2200～2500V; Electric current 550～750mA, is preferably 600～700mA; Etching period 2～10min, is preferably 4～8min.
In various embodiments of the present invention, preferably, before implementation step A, described substrate is carried out to vacuum degassing, preferably, in the time of described vacuum degassing: vacuum degree 1.0 × 10
-4～5.0 × 10
-4mbar, is preferably 1.0 × 10
-4～3.0 × 10
-4mbar; 100 DEG C～120 DEG C of temperature;
In various embodiments of the present invention, preferably, the step of described pretreated substrate comprises: adopt deionized water to wash, and/or adopt alkaline degreaser to carry out oil removing, and/or Ultrasonic Cleaning, and/or dry.
In various embodiments of the present invention, more preferably, dry and carry out at the temperature of 100 DEG C～180 DEG C, and/or oven dry is dried in inert atmosphere.
In various embodiments of the present invention, preferably, described adhesion layer is become by titanium, nickel, chromium or copper; And/or described conducting film is copper film or nickel film or tin film.
In various embodiments of the present invention, preferably, the material of described substrate is resin substrate, glass fabric substrate or ceramic substrate.
In various embodiments of the present invention, preferably, after steps A, detect the surface roughness of described adhesion layer; And/or, after step B, detect the surface roughness of described conducting film.
In various embodiments of the present invention, preferably, utilize magnetron sputtering technique to make described adhesion layer on the surface of described substrate.
In addition, the present invention also provides a kind of circuit board, and this circuit board is the circuit board of making by making circuit board method provided by the invention, and wherein, described Seed Layer comprises strong bonded in the adhesion layer of substrate and is formed on the conducting film on described adhesion layer.
Seed Layer of the present invention comprises adhesion layer and conducting film, and adhesion layer is the adhesion in order to improve conducting film and substrate and be arranged on the transition zone between substrate and conducting film.
For this reason, the manufacture method of circuit board Seed Layer provided by the invention can comprise the following steps: (A) utilize magnetron sputtering technique to make adhesion layer on the surface of described substrate.Adhesion layer can be made of metallic copper, titanium, chromium or nickel, because the adhesion of titanium and insulating material is better than copper, and also the sputter rate of titanium, therefore, preferable alloy titanium.(B) make conducting film by chemical deposition technique and/or physical deposition techniques on the surface of described adhesion layer.Conducting film can adopt electroless copper plating, the heavy tin of chemistry or chemical sinking nickel to make corresponding copper layer, tin layer or nickel dam, or utilizes chemical deposition technique to make other conductive metal layer.
In the time making Seed Layer, can make Seed Layer on the whole surface of substrate; After conducting wire makes, the more invalid Seed Layer being positioned at beyond the lower zone of conducting wire is removed.
The mode of removing invalid Seed Layer has two kinds:
The first removing method is overall etching method, is exposed in etching solution by whole circuit board, and then etching solution is removed Seed Layer.Etch away partially conductive line layer but this removing method is inevitable simultaneously, cause the size (thickness and width) of conducting wire to reduce.Therefore, in the time making conducting wire, its size is greater than design size, and the size of the conducting wire of actual fabrication and the difference of the design size etched size in conducting wire while being etching Seed Layer, after etching Seed Layer, the size of conducting wire just equals design size like this.
The second removing method is to select etched region.Particularly, before etching Seed Layer, first with barrier layer, conducting wire is covered, to avoid etching solution to corrode conducting wire.After Seed Layer beyond etching away conducting wire lower zone, then barrier layer is removed, protected the size of conducting wire by barrier layer.
But the operating cost of the second removing method is high, and it is larger to implement difficulty, the therefore invalid Seed Layer removing method of the preferred the first of actual production.
But, in other embodiments, making when Seed Layer, the region that also can be only need to make conducting wire at substrate surface makes Seed Layer selectively.In one embodiment, first with barrier material, substrate surface is not needed to make the regional occlusion of conducting wire, then make Seed Layer in non-occluded area, then in making conducting wire, the surface of Seed Layer, finally described barrier material is removed.The mode of this making Seed Layer does not need to remove invalid Seed Layer step, and because the region outside conducting wire does not need to make invalid Seed Layer, therefore saves raw material.
Magnetron sputtering apparatus of the present invention comprise be connected successively according to production sequence upload buffer chamber, cooling buffer chamber, ion beam milling chamber, sputter coating chamber, unloading buffer chamber, and isolate by separation valve door between each chamber.Wherein, upload buffer chamber and be provided with thermal radiation heater, at vacuum high-temperature degassing procedure heated substrates.But the magnetron sputtering apparatus of realizing the method for the invention is not limited to above-mentioned magnetron sputtering apparatus, also can adopt existing, can to realize heating in vacuum degasification, ion beam milling cleaning and magnetron sputtering membrane process miscellaneous equipment.
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with accompanying drawing, the manufacture method of circuit board provided by the invention is described in detail.
Referring to Fig. 1, is the making flow chart of the present embodiment circuit board.The present embodiment is to make one deck conducting wire as example, and substrate adopts epoxy resin base plate, and adhesion layer is made by Titanium, and conducting film is made by metallic copper.The manufacturing process of circuit board is as follows:
(1) pretreated substrate
One or more of substrate process pretreatment steps: clean 1.0～2.0min in deionized water; And/or in alkaline degreaser oil removing 1.0～2.0min; And/or ultrasonic wave water washing 2.0～3.0min, by above-mentioned steps, the dust and the organic pollution that are attached to substrate surface are washed, thereby obtain clean substrate.In order to prevent substrate oxidation; substrate need to be dried in time; bake out temperature is 100 DEG C～180 DEG C; RH (humidity) is 0～900ppm; drying time 1～3 hour; and preferably in the protective atmosphere of the inert gas such as such as nitrogen, dry, to avoid substrate to be oxidized in drying course.
(2) make adhesion layer
(21) heating in vacuum degasification
Open the vacuum chamber of magnetron sputtering apparatus, clean substrate is placed on the work support of uploading cushion chamber falls, close vacuum chamber, start vaccum-pumping equipment and thermal radiation heater, making substrate is 1.0 × 10 in vacuum degree
-4～5.0 × 10
-4mbar (millibar), is preferably 1.0 × 10
-4～3.0 × 10
-4mbar; Temperature in vacuum chamber is 100～120 DEG C, and the degasification time is 2～5min.Afterwards substrate is moved to cooling buffer chamber and is cooled to below 60 DEG C by uploading buffer chamber.
(22) ion beam milling
Substrate is moved on to ion beam milling chamber and carry out ion beam milling.Ion beam milling not only can be removed the oxide/sulfide of substrate surface and residual organic substance, and can excite the activation energy of substrate surface atom, thereby improves the adhesion of adhesion layer and substrate.The parameter of ion beam milling is: vacuum degree is 1 × 10
-4～9.0 × 10
-4mbar, is preferably 2 × 10
-4～5.0 × 10
-4mbar; Voltage is 2000～2800V, is preferably 2200～2500V; Electric current 550～750mA, is preferably 600～700mA; Etching period 2～10min, is preferably 4～8min.
(23) magnetron sputtering layer of titanium metal
After ion beam milling, substrate is cooled to below 80 DEG C, then moves to sputter coating chamber and carry out splash-proofing sputtering metal titanium layer, the technological parameter of magnetron sputtering layer of titanium metal is: vacuum degree is 1 × 10
-3～9 × 10
-3mbar, is preferably 1 × 10
-3～5 × 10
-3mbar; Voltage is 500～700V, is preferably 560～660V; Argon flow amount is 300～450sccm (standard state ml/min), is preferably 350～400sccm.The thickness of layer of titanium metal is 10～100nm, is preferably 20～60nm.Finally substrate is moved on to unloading buffer chamber, treat that substrate is cooled to below 70 DEG C, it is taken out in vacuum chamber, thereby complete the preparation of layer of titanium metal.The roughness that detects layer of titanium metal is known, and the surface roughness of layer of titanium metal can reach 0.06～0.08 μ m.
(3) chemical deposition conductive copper films
Adopt existing electroless copper plating technique to make conductive copper films on the surface of layer of titanium metal, the thickness of conductive copper films can be made according to client's requirement, as 0.8～1.2 μ m.Detect the roughness of conductive copper films known, magnetron sputtering technique is only 0.08 μ m in conjunction with the roughness on the conductive copper films surface of electroless copper plating fabrication techniques, and more than adhesion between Seed Layer and substrate can reach 7N/cm.
(4) make conducting wire
Adopt existing mask, exposure, development and cleaning step, on making barrier layer, the surface of conductive copper films (i.e. curing dry film), will not needing the conductive copper films of making region, conducting wire to block, and the conductive copper films that need to make region, conducting wire is exposed, then by electroplating technology plated conductive circuit.After completing, conducting wire again the barrier layer of blocking conductive copper films is removed.The step of making conducting wire is identical with the step of making conducting wire in prior art.
(5) remove conductive copper films
Circuit board is placed to the chemistry of the normal dioxysulfate aqueous systems adopting in the prior art and lose in copper liquid medicine, will be positioned at the conductive copper films outside conducting wire on substrate and remove.
(6) remove adhesion layer
Removing after conducting film, with clear water irrigation circuit plate, cleaning up chemistry is lost to copper liquid medicine; Again circuit board is placed in hydrofluoric acid liquid medicine, the layer of titanium metal outside conducting wire on substrate is removed.
(7) make electricity gold layer and solder mask
This step is identical with solder mask with existing making electricity gold layer, be specially: shift and will not need to make the regional occlusion of electricity gold layer by figure, the regional occlusion of electricity gold layer will do not needed to make with dry film, and make to need the region that makes electricity gold layer to expose, then adopt electroplating technology on the pad of conducting wire, to make electricity gold layer, finally curing dry film is removed.
Again shifts and will not need the position that makes solder mask to block by figure, and the region that makes to make solder mask exposes, then by glossy dark green even scrubbing brush at circuit board surface, finally dry film is removed.So far, the making of completing circuit plate.
It should be noted that, in actual production process, also can first make electricity gold layer, then make solder mask.
The present invention also provides a kind of circuit board, this circuit board comprises substrate, Seed Layer and conducting wire, and Seed Layer is between substrate and conducting wire, Seed Layer for example, obtains by preceding method of the present invention (above-mentioned steps (1), (2) and (3)).The conducting wire of circuit board provided by the invention is smooth, and the loss of high-frequency signal is few.
Be understandable that, above execution mode is only used to principle of the present invention is described and the illustrative embodiments that adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (14)
1. a method of making circuit board, comprising:
Pretreated substrate;
On described substrate, make Seed Layer;
In described Seed Layer, make conducting wire,
It is characterized in that, described Seed Layer comprises adhesion layer and conducting film, and makes by following steps:
A. utilize magnetron sputtering technique to make described adhesion layer on the surface of described substrate;
B. make described conducting film by chemical deposition technique and/or physical deposition techniques on the surface of described adhesion layer;
Wherein, the material of described substrate is resin substrate, glass fabric substrate or ceramic substrate, and the thickness of described adhesion layer is the 1/100-1/3 of described Seed Layer gross thickness.
2. method according to claim 1, is characterized in that, the thickness of described adhesion layer is the 1/50-1/5 of described Seed Layer gross thickness; And/or the thickness of described adhesion layer is 10～100nm.
3. method according to claim 1, is characterized in that, the thickness of described adhesion layer is 20～60nm.
4. according to method described in claim 1 or 2, it is characterized in that, while making described adhesion layer in steps A: vacuum degree is 1 × 10
-3～9 × 10
-3mbar; Voltage is 500～700V; Argon flow amount is 300～450sccm.
5. method according to claim 4, is characterized in that, while making described adhesion layer in steps A: vacuum degree is 1 × 10
-3～5 × 10
-3mbar; Voltage is 560～660V; Argon flow amount is 350～400sccm.
6. according to method described in claim 1 or 2, it is characterized in that, before implementation step A, described substrate is carried out to ion beam milling;
In the time of described ion beam milling: vacuum degree 1 × 10
-4～9 × 10
-4mbar; Voltage 2000～2800V; Electric current 550～750mA; Etching period 2～10min.
7. method according to claim 6, is characterized in that, in the time of described ion beam milling: vacuum degree is 2 × 10
-4～5 × 10
-4mbar; Voltage is 2200～2500V; Electric current 600～700mA; Etching period is 4～8min.
8. according to method described in claim 1 or 2, it is characterized in that, before implementation step A, described substrate is carried out to vacuum degassing;
In the time of described vacuum degassing: vacuum degree is 1 × 10
-4～5 × 10
-4mbar; 100 DEG C～120 DEG C of temperature.
9. method according to claim 8, is characterized in that, in the time of described vacuum degassing, vacuum degree is 1 × 10
-4～3 × 10
-4mbar.
10. according to method described in claim 1 or 2, it is characterized in that, the step of described pretreated substrate comprises:
Adopt deionized water to wash, and/or
Adopt alkaline degreaser to carry out oil removing, and/or
Ultrasonic Cleaning, and/or
Dry.
11. methods according to claim 10, is characterized in that, dry and carry out at the temperature of 100 DEG C～180 DEG C; And/or oven dry is carried out in inert atmosphere.
12. according to method described in claim 1 or 2, it is characterized in that, described adhesion layer is become by titanium, nickel, chromium or copper; And/or described conducting film is copper film or nickel film or tin film.
13. according to method described in claim 1 or 2, it is characterized in that, after steps A, detects the surface roughness of described adhesion layer; And/or, after step B, detect the surface roughness of described conducting film.
14. 1 kinds of circuit boards, is characterized in that, it makes according to method described in any one in claim 1-13, and wherein, described Seed Layer comprises strong bonded in the adhesion layer of substrate and is formed on the conducting film on described adhesion layer.
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| CN201010544633.0A CN102469700B (en) | 2010-11-12 | 2010-11-12 | Method for manufacturing circuit board and circuit board |
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| CN201010544633.0A CN102469700B (en) | 2010-11-12 | 2010-11-12 | Method for manufacturing circuit board and circuit board |
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| CN102469700B true CN102469700B (en) | 2014-07-09 |
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Cited By (1)
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|---|---|---|---|---|
| WO2022271495A1 (en) * | 2021-06-25 | 2022-12-29 | Corning Incorporated | Method for forming metal layers on glass-containing substrate, and resulting device |
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| CN104600022A (en) * | 2013-10-30 | 2015-05-06 | 泉州市金太阳照明科技有限公司 | Method for manufacturing interconnect circuit |
| CN104735899B (en) * | 2013-12-19 | 2017-08-22 | 鹏鼎控股(深圳)股份有限公司 | Flexible circuit board and preparation method thereof |
| CN106686895A (en) * | 2016-12-30 | 2017-05-17 | 昆山元茂电子科技有限公司 | Surface treatment method for printed circuit board |
| CN109561585A (en) * | 2017-09-27 | 2019-04-02 | 深圳市博敏电子有限公司 | Ceramic base circuit board preparation process |
| CN115066088A (en) * | 2022-06-30 | 2022-09-16 | 浙江华正新材料股份有限公司 | Printed circuit board and preparation method thereof |
| CN116334556B (en) * | 2023-03-14 | 2024-05-03 | 中国科学院兰州化学物理研究所 | Preparation method of polymer composite copper foil copper seed layer |
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| CN101014231A (en) * | 2006-02-02 | 2007-08-08 | Ls电线有限公司 | Flexible metal clad laminate and manufacturing method thereof |
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| CN102469700A (en) | 2012-05-23 |
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