CN106346318A - InP (indium phosphide) wafer thinning and polishing method and chemical corrosion device - Google Patents
InP (indium phosphide) wafer thinning and polishing method and chemical corrosion device Download PDFInfo
- Publication number
- CN106346318A CN106346318A CN201610983842.2A CN201610983842A CN106346318A CN 106346318 A CN106346318 A CN 106346318A CN 201610983842 A CN201610983842 A CN 201610983842A CN 106346318 A CN106346318 A CN 106346318A
- Authority
- CN
- China
- Prior art keywords
- indium phosphide
- chemical attack
- polishing method
- phosphide wafer
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides an InP (indium phosphide) wafer thinning and polishing method and a chemical corrosion device. The thinning and polishing method comprises the following steps of S1, physical grinding: putting an InP wafer on a grinding disc, physically grinding, and thinning the InP wafer from 300-500mu m to 180-240mu m; S2, chemical corrosion: putting the physically ground InP wafer into the chemical corrosion device, and chemically corroding in concentrated hydrochloric acid; S3, chemical and mechanical polishing: putting the chemically corroded InP wafer on nylon lint cloth, and chemically and mechanically polishing. The thinning and polishing method has the advantages that the high-efficiency thinning and polishing method combining physical grinding and chemical corrosion is proposed; the problems of low rate, more surface scratches, easiness in cracking in the thinning process, and the like in the existing InP wafer thinning and polishing method are solved.
Description
Technical field
The present invention relates to wafer preparing technical field, more particularly, to a kind of indium phosphide wafer attenuated polishing method and chemistry
Corrosion device.
Background technology
Indium phosphide (inp) is important iii-v group iii v compound semiconductor material, be continue silicon (si) and GaAs (gaas) it
Electronic functional material of new generation afterwards.Generally, inp device is prepared on the surface of inp monocrystalline polished silicon wafer, so the surface of polished silicon wafer
Quality can affect the quality of device performance.The chemical property of indium phosphide is active, and easy and oxidant occurs chemical reaction, especially exists
Under sour environment, easily occur violent chemical reaction that " flash of light " phenomenon occurs；On the other hand, the K-hardness of indium phosphide is relatively
Little, and there is certain fragility, easily produce machining damage.
At present, the finishing method one kind of the inp single-chip commonly used both at home and abroad is that chemical attack is thinning, mainly br2、hbr、
The halogens such as bromine methanol series caustic.Although, above-mentioned halogen series caustic has good polishing performance, thinning speed
Not high enough, and accumulative murder by poisoning, inapplicable industrialized production are produced to human body.Another is chemically mechanical polishing (cmp),
Mainly in polishing fluid, add the oxides such as perchloride, hydrogen peroxide, act on while chemical action and mechanism
Under carry out attenuated polishing.However, the thinning speed of the method is slower and unstable, production efficiency is not also high, thinning for a long time also
The problem that surface scratch increases can be caused.
Therefore, for the problems referred to above it is necessary to propose further solution.
Content of the invention
It is an object of the invention to provide a kind of indium phosphide wafer attenuated polishing method and chemical attack device, to overcome
The deficiencies in the prior art.
For achieving the above object, the present invention provides a kind of indium phosphide wafer attenuated polishing method, and it includes as follows
Step:
S1, physical grinding step, indium phosphide wafer are carried out on abrasive disk physical grinding, and indium phosphide wafer is thick
Degree is thinned to 180～240 μm from 300～500 μm；
S2, steps of chemical attack, the indium phosphide wafer through physical grinding are positioned in chemical attack device, dense
Carry out chemical attack in hydrochloric acid；
S3, chemical-mechanical polishing step, the indium phosphide wafer after chemical attack is changed on nylon flannelette
Learn mechanical polishing.
As the improvement of the indium phosphide wafer attenuated polishing method of the present invention, in described physical grinding step, using master
The lapping liquid wanting composition to be alumina powder, indium phosphide wafer is carried out on quartzy abrasive disk physical grinding.
As the improvement of the indium phosphide wafer attenuated polishing method of the present invention, in described physical grinding step, thinning speed
Rate is 5～10 μm/min.
As the improvement of the indium phosphide wafer attenuated polishing method of the present invention, in described steps of chemical attack, at 30 DEG C
In～40 DEG C of concentrated hydrochloric acid, carry out chemical attack under magnetic stirring.
As the improvement of the indium phosphide wafer attenuated polishing method of the present invention, in described steps of chemical attack, thinning speed
Rate is 20～30 μm/min.
As the improvement of the indium phosphide wafer attenuated polishing method of the present invention, in described chemical-mechanical polishing step, make
Use naoh-h2o2Series Polishing Liquid, the indium phosphide wafer after chemical attack is carried out chemical machinery throwing on nylon flannelette
Light.
As the improvement of the indium phosphide wafer attenuated polishing method of the present invention, in described chemical-mechanical polishing step, institute
Stating polishing speed is 0.3～0.6 μm/min.
For achieving the above object, the present invention provides a kind of chemical attack device, and it includes base and handle；
The bottom hollow out setting of described base, and the edge of described base is vertically installed with frame, described base
Bottom and the host cavity of frame restriction indium phosphide wafer；Mounting ear is additionally provided with described frame, the two ends of described handle are divided
The shape mounting groove corresponding with described mounting ear shape Ao Xian be provided with, described handle passes through described mounting ear and mounting groove
Releasably it is installed on described base.
As the improvement of the chemical attack device of the present invention, described bottom offers some hollow out through holes, described some engraves
Empty through hole is arranged in the bottom of described base with annular array form.
As the improvement of the chemical attack device of the present invention, described mounting ear includes connecting portion and installation portion, described installation
Portion is arranged at the top surface of described frame by described connecting portion, and the thickness of described connecting portion and width are respectively smaller than described installation portion
Thickness and width.
Compared with prior art, the invention has the beneficial effects as follows: the present invention proposes a kind of rotten with physical grinding and chemistry
Erosion combines the high efficiency attenuated polishing method carrying out step by step, and it can overcome in existing inp wafer attenuated polishing method, deposits
Speed is slow, surface scratch is many and thinning process in be easily broken the problems such as.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Some embodiments described in invention, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the method flow schematic diagram of indium phosphide wafer attenuated polishing method one specific embodiment of the present invention；
Fig. 2 is the schematic perspective view of chemical attack device one specific embodiment of the present invention；
Fig. 3 is the enlarged diagram of dotted portion in Fig. 2.
Specific embodiment
The present invention is described in detail for shown each embodiment below in conjunction with the accompanying drawings, but it should explanation, these
Embodiment not limitation of the present invention, those of ordinary skill in the art according to these embodiment institute work energy, method,
Or the equivalent transformation in structure or replacement, belong within protection scope of the present invention.
As shown in figure 1, the indium phosphide wafer attenuated polishing method of the present invention comprises the steps:
S1, physical grinding step, indium phosphide wafer are carried out on abrasive disk physical grinding, and indium phosphide wafer is thick
Degree is thinned to 180～240 μm from 300～500 μm.
Specifically, when indium phosphide wafer being carried out physical grinding on abrasive disk, the use of main component is alumina powder
Lapping liquid be ground it is preferable that described abrasive disk is quartzy abrasive disk.Thinning speed is controlled to be 5～10 μm/min, thus
In the presence of physical grinding, indium phosphide wafer thickness is thinned to 180～240 μm from 300～500 μm.
S2, steps of chemical attack, the indium phosphide wafer through physical grinding are positioned in chemical attack device, dense
Carry out chemical attack in hydrochloric acid.
Specifically, when carrying out chemical attack, the thinning speed of control is 20～30 μm/min, will place indium phosphide wafer
Chemical attack device, in 30 DEG C～40 DEG C of concentrated hydrochloric acid, carries out chemical attack under magnetic stirring.
As shown in Fig. 2 wherein, described chemical attack device includes base 1 and handle 2.Described base 1 has placement phosphatization
Indium wafer and its host cavity of carrier.Specifically, the bottom hollow out setting of described base 1, for realizing this purpose, described bottom
Offer some hollow out through holes 10, described some hollow out through holes 10 are arranged in the bottom of described base 1 with annular array form.Excellent
Selection of land, described hollow out through hole 10 is sector, and the center of circle of described annular array is the center of the bottom of described base 1.By setting
Described hollow out through hole 10, the concentrated hydrochloric acid circulation stirred during corrosion is more smooth, thus, concentrated hydrochloric acid is more filled with the reaction of inp wafer
Point.
Additionally, the bottom of described base 1 is additionally provided with some support feets 3, described support feet 3 is obliquely provided with described bottom
On the bottom surface of seat 1, it is arranged such, to provide firm supporting role power for described base 1.Preferably, the number of described support feet 3
Measure as 3.
Further, the edge of described base 1 is vertically installed with frame 11, the bottom of described base 1 and frame 11
Limit the described host cavity of described indium phosphide wafer and its carrier.Easily mount and dismount to realize described handle 2, institute
State base 1 and handle 2 is detachably connected with.Specifically, described frame 11 is additionally provided with mounting ear 13 it is preferable that described peace
Dress ear 13 is symmetrical arranged.Meanwhile, the two ends of described handle 2 are recessed respectively, and to be provided with shape corresponding with described mounting ear 13 shape
Mounting groove 20, described handle 2 passes through described mounting ear 13 and mounting groove 20 and is releasably installed on described base 1.Preferably,
Described mounting ear 13 symmetrically falls and is arranged on described frame 11.Described handle 2 is u shape, and described mounting groove 20 is located at described u shape handle
On the medial wall at handss 2 two ends.
In above-mentioned embodiment, described mounting ear 13 includes connecting portion 131 and installation portion 132, wherein, described installation portion
132 are arranged at the top surface of described frame 11 by described connecting portion 131, and the thickness of described connecting portion 132 and width are respectively smaller than
The thickness of described installation portion 131 and width.Thus, the size being smaller in size than described installation portion 132 of described connecting portion 131, two
Form ledge structure between person.
It is arranged such, when installing described handle 2, because handle 2 has certain elasticity, thus, handle 2 can be supportted
Open, then according to the installation direction of described mounting ear 13, described mounting ear 13 is installed in described mounting groove 20.Now, institute
State the position limiting structure that ledge structure forms described handle 2, it is to avoid it is moved in horizontally and vertically direction.When described of dismounting
During handss 2, handle 2 can be strutted, so that described mounting ear 13 and mounting groove 20 is separated, and then realize the dismounting of described handle 2.
S3, chemical-mechanical polishing step, the indium phosphide wafer after chemical attack is changed on nylon flannelette
Learn mechanical polishing.
Specifically, in described chemical-mechanical polishing step, using naoh-h2o2Series Polishing Liquid, and control described polishing speed
Rate is 0.3～0.6 μm/min, and the indium phosphide wafer after chemical attack is carried out chemical machinery throwing on nylon flannelette
Light.
In sum, the present invention proposes that a kind of to combine, with physical grinding and chemical attack, the high efficiency carrying out step by step thinning
Finishing method, it can overcome in existing inp wafer attenuated polishing method, the speed existing is slow, surface scratch is many and
The problems such as be easily broken in thinning process.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of the spirit or essential attributes of the present invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than described above limits, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Any reference in claim should not be considered as limiting involved claim.
Moreover, it will be appreciated that although this specification is been described by according to embodiment, not each embodiment only wraps
Containing an independent technical scheme, only for clarity, those skilled in the art should for this narrating mode of description
Using description as an entirety, the technical scheme in each embodiment can also form those skilled in the art through appropriately combined
Understandable other embodiment.
Claims (10)
1. a kind of indium phosphide wafer attenuated polishing method is it is characterised in that described attenuated polishing method comprises the steps:
S1, physical grinding step, indium phosphide wafer are carried out on abrasive disk physical grinding, by indium phosphide wafer thickness from
300～500 μm are thinned to 180～240 μm；
S2, steps of chemical attack, the indium phosphide wafer through physical grinding are positioned in chemical attack device, in concentrated hydrochloric acid
In carry out chemical attack；
S3, chemical-mechanical polishing step, the indium phosphide wafer after chemical attack is carried out chemical machine on nylon flannelette
Tool polishes.
2. indium phosphide wafer attenuated polishing method according to claim 1 is it is characterised in that described physical grinding step
In, the use of main component is the lapping liquid of alumina powder, indium phosphide wafer is carried out on quartzy abrasive disk physical grinding.
3. indium phosphide wafer attenuated polishing method according to claim 1 and 2 is it is characterised in that described physical grinding
In step, thinning speed is 5～10 μm/min.
4. indium phosphide wafer attenuated polishing method according to claim 1 is it is characterised in that described steps of chemical attack
In, in 30 DEG C～40 DEG C of concentrated hydrochloric acid, carry out chemical attack under magnetic stirring.
5. the indium phosphide wafer attenuated polishing method according to claim 1 or 4 is it is characterised in that described chemical attack
In step, thinning speed is 20～30 μm/min.
6. indium phosphide wafer attenuated polishing method according to claim 1 is it is characterised in that described chemically mechanical polishing
In step, using naoh-h2o2Series Polishing Liquid, the indium phosphide wafer after chemical attack is carried out on nylon flannelette
Chemically mechanical polishing.
7. the indium phosphide wafer attenuated polishing method according to claim 1 or 6 is it is characterised in that described chemical machinery
In polishing step, described polishing speed is 0.3～0.6 μm/min.
8. a kind of chemical attack device is it is characterised in that described chemical attack device includes base and handle；
The bottom hollow out setting of described base, and the edge of described base is vertically installed with frame, the bottom of described base
Limit the host cavity of indium phosphide wafer with frame；Mounting ear is additionally provided with described frame, the two ends of described handle are recessed respectively
Fall into and be provided with the shape mounting groove corresponding with described mounting ear shape, described handle passes through described mounting ear and mounting groove dismounting
Be installed on described base.
9. chemical attack device according to claim 8 is it is characterised in that described bottom offers some hollow out through holes,
Described some hollow out through holes are arranged in the bottom of described base with annular array form.
10. chemical attack device according to claim 8 is it is characterised in that described mounting ear includes connecting portion and installation
Portion, described installation portion is arranged at the top surface of described frame by described connecting portion, and the thickness of described connecting portion and width are little respectively
Thickness and width in described installation portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610983842.2A CN106346318A (en) | 2016-11-09 | 2016-11-09 | InP (indium phosphide) wafer thinning and polishing method and chemical corrosion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610983842.2A CN106346318A (en) | 2016-11-09 | 2016-11-09 | InP (indium phosphide) wafer thinning and polishing method and chemical corrosion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106346318A true CN106346318A (en) | 2017-01-25 |
Family
ID=57861364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610983842.2A Pending CN106346318A (en) | 2016-11-09 | 2016-11-09 | InP (indium phosphide) wafer thinning and polishing method and chemical corrosion device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106346318A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110453289A (en) * | 2019-09-19 | 2019-11-15 | 广东先导先进材料股份有限公司 | A kind of corrosive liquid and caustic solution for the identification of surface of indium phosphide twin |
| CN113206007A (en) * | 2021-04-30 | 2021-08-03 | 中锗科技有限公司 | Preparation method of indium phosphide substrate |
| CN114131434A (en) * | 2021-12-01 | 2022-03-04 | 成都海威华芯科技有限公司 | Thinning and polishing method of indium phosphide |
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| JPS58135114A (en) * | 1982-02-02 | 1983-08-11 | Nippon Telegr & Teleph Corp <Ntt> | Polishing of indium phosphide |
| CN1402309A (en) * | 2001-08-20 | 2003-03-12 | 中国科学院半导体研究所 | Proces for polishing indium phosphide single crystal wafer |
| US6722949B2 (en) * | 2001-03-20 | 2004-04-20 | Taiwan Semiconductors Manufacturing Co., Ltd | Ventilated platen/polishing pad assembly for chemcial mechanical polishing and method of using |
| CN102172885A (en) * | 2011-01-31 | 2011-09-07 | 北京通美晶体技术有限公司 | Substrate polishing device and polished substrate thereof |
| CN102768980A (en) * | 2012-07-06 | 2012-11-07 | 上海新傲科技股份有限公司 | Method for treating surface of substrate and method for manufacturing substrate with insulating buried layer |
| CN103199014A (en) * | 2013-03-05 | 2013-07-10 | 中国科学院微电子研究所 | Method for thinning and polishing indium phosphide (InP) materials |
| CN204651297U (en) * | 2015-06-09 | 2015-09-16 | 北京市塑料研究所 | The cleaning gaily decorated basket |
| CN206357048U (en) * | 2016-11-09 | 2017-07-28 | 苏州长光华芯光电技术有限公司 | Chemical attack device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135114A (en) * | 1982-02-02 | 1983-08-11 | Nippon Telegr & Teleph Corp <Ntt> | Polishing of indium phosphide |
| US6722949B2 (en) * | 2001-03-20 | 2004-04-20 | Taiwan Semiconductors Manufacturing Co., Ltd | Ventilated platen/polishing pad assembly for chemcial mechanical polishing and method of using |
| CN1402309A (en) * | 2001-08-20 | 2003-03-12 | 中国科学院半导体研究所 | Proces for polishing indium phosphide single crystal wafer |
| CN102172885A (en) * | 2011-01-31 | 2011-09-07 | 北京通美晶体技术有限公司 | Substrate polishing device and polished substrate thereof |
| CN102768980A (en) * | 2012-07-06 | 2012-11-07 | 上海新傲科技股份有限公司 | Method for treating surface of substrate and method for manufacturing substrate with insulating buried layer |
| CN103199014A (en) * | 2013-03-05 | 2013-07-10 | 中国科学院微电子研究所 | Method for thinning and polishing indium phosphide (InP) materials |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110453289A (en) * | 2019-09-19 | 2019-11-15 | 广东先导先进材料股份有限公司 | A kind of corrosive liquid and caustic solution for the identification of surface of indium phosphide twin |
| CN110453289B (en) * | 2019-09-19 | 2021-10-26 | 广东先导先进材料股份有限公司 | Etching solution and etching method for identifying twin crystals on indium phosphide surface |
| CN113206007A (en) * | 2021-04-30 | 2021-08-03 | 中锗科技有限公司 | Preparation method of indium phosphide substrate |
| CN113206007B (en) * | 2021-04-30 | 2022-02-22 | 中锗科技有限公司 | Preparation method of indium phosphide substrate |
| CN114131434A (en) * | 2021-12-01 | 2022-03-04 | 成都海威华芯科技有限公司 | Thinning and polishing method of indium phosphide |
| CN114131434B (en) * | 2021-12-01 | 2022-12-13 | 成都海威华芯科技有限公司 | Thinning and polishing method of indium phosphide |
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Application publication date: 20170125 |