CN103187474A - Method for reducing series resistance of emitter of selective-emitter solar cell - Google Patents
Method for reducing series resistance of emitter of selective-emitter solar cell Download PDFInfo
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- CN103187474A CN103187474A CN2011104438806A CN201110443880A CN103187474A CN 103187474 A CN103187474 A CN 103187474A CN 2011104438806 A CN2011104438806 A CN 2011104438806A CN 201110443880 A CN201110443880 A CN 201110443880A CN 103187474 A CN103187474 A CN 103187474A
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Abstract
A method for reducing series resistance of an emitter of a selective-emitter solar cell comprises the steps of forming a figure on a solar silicon wafer with a doped source having an opposite polarity to the solar silicon wafer, conducting a diffusion technology on the solar silicon wafer, and forming an emitter with low doping concentration and a semiconductor channel, with a medium doping concentration, in the emitter. During a solar cell manufacturing course by the method, the emitter and the semiconductor channel located in the emitter can be formed simultaneously by the single diffusion technology, other heat treatment courses are not required, the preparation of the semiconductor channel has a self-alignment characteristic, and an alignment technology is not required to be used in subsequent processes. The semiconductor channel with the medium doping concentration forms a current channel between front grid line electrodes, the carrier collection capabilities of the grid line electrodes are improved, the series resistance of the cell is reduced greatly, and the purposes of improving a cell fill factor, short-circuit current and cell conversion efficiency are achieved.
Description
Technical field
The present invention relates to a kind of manufacture method of solar cell.Particularly, what the present invention relates to is a kind of method that reduces selective emitter solar battery emitter series resistance,
Background technology
Solar cell is the semiconductor device that solar energy is converted to electric energy.The making of existing traditional silk-screened silicon solar cell generally includes silicon chip surface making herbs into wool; Emitter diffusion; The trimming insulation; Phosphorosilicate glass is removed; The anti-reflecting layer deposition; The screen painting electrode; The thermal process sintering; Steps such as test.
The principle relevant with solar cell and making flow process can be quoted as a reference referring to CN101740659A and CN101872808A herein.
Selective emitter solar battery is a kind of novel efficient solar cell.Compare with the traditional silk-screened solar cell, selective emitter solar battery adopts the high square resistance emitter layer, and the heavy doping of regional area is realized on the surface of the emitter layer below gate line electrode.Emitter side's resistance of existing selective emitter solar battery is about 100 Ω/, and the resistance of heavily doped region side is about 30 Ω/.
Selective emitter solar battery can adopt the different process flow preparation, relative theory and making flow process can be referring to US6429037B1, WO2007085454A1, US6091021, US20110159633A1, US20110183504A1, US20110189810A1, " Laser Chemical Processing (LCP)-A versatile tool for microstructuring applications " (Applied Physics A, Vol.93, pp.99-103,2008), " The development of etch-back processes for industrial silicon solar cells " (Proceedings of 25
ThEuropean Photovoltaic Solar Energy Conference and Exhibition, pp.1174-1178,2010).
Compare with the traditional silk-screened solar cell, use the solar cell of selective emitter to have blue response preferably and less electrode covering, therefore can realize higher photoelectric conversion efficiency.But, because its emitter surface side's resistance is bigger, thereby caused the increase of battery series resistance, hinder the further raising of battery conversion efficiency.
In US20090007962A1, adopt the mode at the solar cell surface fluting to form heavily doped current delivery passage, thereby reduce the lateral resistance loss of screen-printed solar cell, reach the purpose of improving battery fill factor, curve factor and conversion efficiency.Yet the prior art need be used extra fluting and secondary doping process, the technological process complexity, and the production cost height is specifically made flow process and is difficult to grasp.
Inkjet technology is widely used in semicon industries such as printed circuit, flexible electronic, solar cell manufacturing, and it is low to have a cost, and technology is simple, characteristics such as good environmental adaptability.In US20090239363A1 and US20100048006A1, adopted contactless inkjet printing methods in the semiconductor-based end, to realize mixing, quote as a reference herein.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method that reduces selective emitter solar battery emitter series resistance.
Specifically, this method has proposed a kind of method of emitter surface series resistance of effective reduction selective emitter solar battery, it forms the semiconductor channel of medium-doped concentration between front gate line electrode by the technological process of optimizing, thereby reduce the sheet resistance of light dope emitter and the series resistance of solar cell, the raising of conversion efficiency of solar cell is significantly improved.
For solving the problems of the technologies described above, the present invention proposes a kind of method that reduces selective emitter solar battery emitter series resistance, wherein, described method comprises the steps:
A, to the process for etching of solar silicon wafers operative norm, form the pyramid structure on described solar silicon wafers surface;
B, use and the opposite polarity doped source of described solar silicon wafers are made figure at described solar silicon wafers;
C, to described solar silicon wafers operative norm diffusion technology, form the emitter of light dope concentration simultaneously and be positioned at the semiconductor channel of the medium-doped concentration of emitter inside; In addition, form the silicon dioxide layer that contains impurity on described solar silicon wafers surface; The diffusing, doping source polarity is identical with doped source polarity described in the step B, and opposite with described solar silicon wafers polarity;
D, to the insulation of the trimming of described solar silicon wafers operative norm with go silicon dioxide technology, with described solar silicon wafers side and the back side and the complete removal of the silicon dioxide layer opposite polarity silicon chip of described solar silicon wafers and surface;
E, described solar silicon wafers is carried out cleaning, remove the residue that doped source forms and can not remove in step C in step D;
F, after the preparation of described light dope emitter and medium-doped concentration semiconductor channel is finished, proceed the preparation technology of other parts such as anti-reflective film, selective emitter, gate line electrode, bus electrode and back electrode, finally finish the making of selective emitter solar battery;
Preferably, in the described steps A, described solar silicon wafers carries out overdoping technology, and resistivity is about 0.1-3.5 Ω cm;
Preferably, among the described step B, make the figure that contains doped source by the mode of silk screen printing, inkjet printing or physical deposition;
Preferably, among the described step B, if doped source is N-type, then can be nitrogen, phosphorus, arsenic, antimony or contain the compound of above element; If doped source is the P type, then can be boron, aluminium, gallium, indium or contain the compound of above element;
Preferably, among the described step B, the figure that made forms can be one of straight line, broken line, curve or its combination;
Preferably, among the described step B, line thickness is 20 μ m-200 μ m in the figure that made forms;
Preferably, among the described step C, the used diffuse source of diffusion technology can be one of solid, liquid, gas or its combination;
Preferably, among the described step C, the resistance of the side of described light dope concentration emitter is 70 Ω/-140 Ω/; Side's resistance of described medium-doped concentration semiconductor channel is 30 Ω/-65 Ω/;
Preferably, in the described step e, adopt ammonium hydroxide hydrogen peroxide mixed solution, hydrofluoric acid solution and hydrochloric acid hydrogen peroxide mixed solution, clean described solar silicon wafers successively;
Preferably, in the described step F, the preparation of selective emitter battery can be adopted distinct methods, relative theory and making flow process can be referring to US6429037B1, WO2007085454A1, US6091021, US20110159633A1, US20110183504A1, US20110189810A1, " Laser Chemical Processing (LCP)-A versatile tool for microstructuring applications " (Applied Physics A, Vol.93, pp.99-103,2008), " The development of etch-back processes for industrial silicon solar cells " (Proceedings of 25th European Photovoltaic Solar Energy Conference and Exhibition, pp.1174-1178,2010).
Method of the present invention prepares in the process of selective emitter solar battery, at first use with the opposite polarity doped source of solar silicon wafers and make figure at solar silicon wafers, again the medium-doped concentration semiconductor channel that in solar silicon wafers, forms lightly doped emitter simultaneously and be positioned at emitter through diffusion technology.The pattern of described semiconductor channel, size and distribution are determined by described doped source figure.Described medium-doped concentration semiconductor channel and battery emitter form simultaneously, need not to use other heat treatment processes.The preparation process of described medium-doped concentration semiconductor channel has the autoregistration characteristic, and subsequent technique need not to use technique of alignment.Described medium-doped concentration semiconductor channel forms good current channel between front gate line electrode, thereby improves the carrier collection ability of gate line electrode, significantly reduces the series resistance of solar cell; Because the reduction of solar cell emitter side resistance can be adopted wideer interval design between the gate line electrode, hide thereby reduce electrode, increases solar cell to the absorption of sunlight.Therefore, in selective emitter solar battery, adopt described medium-doped concentration semiconductor channel to reach and improve fill factor, curve factor, the purpose of short circuit current and battery conversion efficiency.
Description of drawings
The following drawings only is intended to the present invention done and schematically illustrates and explain, not delimit the scope of the invention.Wherein,
Fig. 1 shows is to reduce in the method for selective emitter solar battery emitter series resistance according to a specific embodiment of the present invention a kind of, through after the making herbs into wool to the solar silicon wafers operative norm, form the situation of pyramid structure on the solar silicon wafers surface;
What Fig. 2 showed is on basis shown in Figure 1, uses the situation of making figure with the opposite polarity doped source of solar silicon wafers at solar silicon wafers;
What Fig. 3 showed is on basis shown in Figure 2, forms the situation of the semiconductor channel of the emitter of light dope concentration and medium-doped concentration by the standard diffusion technology;
What Fig. 4 showed is on basis shown in Figure 3, in the trimming insulation of operative norm on the solar silicon wafers with the situation after going silicon dioxide technology;
What Fig. 5 showed is on basis shown in Figure 4, continues to finish deposit Si
3N
4Anti-reflective film, the silk screen printing back electrode, the laser doping selective emitter after the technologies such as light plating positive electrode and sintering, is finally finished the situation of selective emitter solar battery;
What Fig. 6 showed is the vertical view of finishing the selective emitter solar battery of making, indicates the relative position relation of solar cell bus electrode, gate line electrode and semiconductor channel.
Embodiment
Understand for technical characterictic of the present invention, purpose and effect being had more clearly, now contrast description of drawings the specific embodiment of the present invention.Wherein, identical parts adopt identical label.
Based on the description of the related art in the background technology, in following example of the present invention, no longer describe its principle in detail for the process technology of solar cell, to save length.
What below will describe is a kind of method that reduces laser doping selective emitter solar battery emitter series resistance based on a concrete embodiment of the present invention, and is described in detail with reference to the flow process of Fig. 1-6, as shown in the figure.
Described method comprises the steps:
A, to the process for etching of described P type solar silicon wafers 1 operative norm, form the pyramid structure 2 on described solar silicon wafers 1 surface, as shown in Figure 1;
B, use ink-jet printing process are sprayed on phosphorous doped source 3 on the described solar silicon wafers 1 and form figure, as shown in Figure 2; Described phosphorous doped source 3 can be the compound of phosphorus, as H
3PO4, POCl
3, H (OPOOH)
nOH, HPO
3, H
3PO
3, H
3PO
2, also can be the organic solvent of mixing phosphorus;
C, described solar silicon wafers 1 is carried out the standard diffusion technology, form the N-type emitter 4 of light dope concentration, side's resistance is about 100 Ω/; Simultaneously, at the inner N type semiconductor raceway groove 5 that forms medium-doped concentration of emitter, side's resistance is about 50 Ω/, as shown in Figure 3; The used phosphorous diffusion source that contains of diffusion technology can be one of solid, liquid, gas or its combination, as P
2O
5, POCl
3, PH
3
D, to the insulation of the trimming of described solar silicon wafers 1 operative norm with go phosphorous silicon dioxide technology, with the N-type silicon chip at described solar silicon wafers 1 side and the back side and the phosphorous silicon dioxide 6 complete removals on surface, as shown in Figure 4;
E, employing ammonium hydroxide hydrogen peroxide mixed solution, hydrofluoric acid solution and hydrochloric acid hydrogen peroxide mixed solution are carried out cleaning to described solar silicon wafers 1 successively, remove the residue that phosphorous doped source 3 forms and can not remove in step D in step C;
F, after the processing procedure of described light dope concentration emitter 4 and medium-doped concentration semiconductor channel 5 is finished, proceed deposit Si3N4 anti-reflective film 9, silk screen printing back electrode 10, laser doping selective emitter 7, light plating gate line electrode 8 and bus electrode 11, and technology such as sintering, finally finish the making of selective emitter solar battery, as shown in Figure 5 and Figure 6; The relative production flow process can be referring to CN101740659A, CN101872808A and US6429037B1.
Should benly be, though the similar processing technology of having mentioned that some area of solar cell or semiconductor applications adopt in the prior art, but in actual application, processing technology is to have a definite sequence, each step can exert an influence to step thereafter, thereby determines order and the parameter thereof of subsequent step.
Therefore, judging difference with the prior art of the present invention and creationary the time, it should be understood by those skilled in the art that not to be that two or more prior aries just can skimble-skamblely be combined into each step of the present invention, thereby can obtain same effect; On the contrary, those skilled in the art more should understand, in order to obtain specific technique effect, the present invention has carried out meticulous optimization process to each step, thereby obtained to possess creationary technological process in regular turn, and the sequencing of technological process of the present invention selects to exist necessary relation with parameter the preceding.
For example, in the solar cell that method of the present invention is made, at first inkjet technology dopant deposition source is used on the surface of the solar silicon wafers after making herbs into wool, and by accurate design printing curve structure, thereby control forms pattern and the size of semiconductor channel; In addition, owing to the doped source that inkjet printing forms is finished, thereby can directly form the emitter of light dope concentration and the semiconductor channel of medium-doped concentration simultaneously by a diffusion technology before diffusion technology is carried out, simplify technological process greatly.
This shows, in the prior art, no matter be area of solar cell, or semiconductor applications, all there is not to disclose or hint the step order of this method provided by the present invention, and the arrangement of each step of the present invention has determined different materials to select and parameter area just, thereby the step order after just having had and the selection of parameter.Therefore, the present invention's method required for protection all is not disclosed or hints in area of solar cell and semiconductor applications, and the technique effect that method of the present invention obtains also is that prior art is difficult to expect.
Though it will be understood by those skilled in the art that the present invention is that mode according to a plurality of embodiment is described, and is not that each embodiment only comprises an independently technical scheme.Narration like this only is for the sake of clarity in the specification; those skilled in the art should make specification as a wholely to be understood, and regard technical scheme related among each embodiment as the mode that can be combined into different embodiment mutually understand protection scope of the present invention.
The above only is the schematic embodiment of the present invention, is not in order to limit scope of the present invention.Any those skilled in the art, the equivalent variations of doing under the prerequisite that does not break away from design of the present invention and principle, modification and combination all should belong to the scope of protection of the invention.
Claims (8)
1. a method that reduces selective emitter solar battery emitter series resistance is characterized in that, described method comprises the steps:
A, to the process for etching of solar silicon wafers operative norm, form the pyramid structure on solar silicon wafers surface;
B, use and the opposite polarity doped source of described solar silicon wafers are made figure at described solar silicon wafers;
C, to described solar silicon wafers operative norm diffusion technology, form the emitter of light dope concentration simultaneously and be positioned at the semiconductor channel of the medium-doped concentration of emitter inside; In addition, form the silicon dioxide layer that contains impurity on described solar silicon wafers surface; The diffusing, doping source polarity is opposite with described solar silicon wafers polarity;
D, to the insulation of the trimming of described solar silicon wafers operative norm with go silicon dioxide technology, with described solar silicon wafers side and the back side and the complete removal of the silicon dioxide layer opposite polarity silicon chip of described solar silicon wafers and surface;
E, described solar silicon wafers is carried out cleaning, remove the residue that contains doped source;
F, after the preparation of described light dope emitter and medium-doped concentration semiconductor channel is finished, proceed the preparation technology of other parts such as anti-reflective film, selective emitter, gate line electrode, bus electrode and back electrode, finally finish the making of selective emitter solar battery.
2. method according to claim 1 is characterized in that, among the described step B, makes the figure that contains doped source by the mode of silk screen printing, inkjet printing or physical deposition.
3. method according to claim 1 is characterized in that, among the described step B, if doped source is N-type, then can be nitrogen, phosphorus, arsenic, antimony or contain the compound of above element, if doped source is the P type, then can be boron, aluminium, gallium, indium or contain the compound of above element.
4. method according to claim 1 is characterized in that, among the described step B, the figure that made forms can be one of straight line, broken line, curve or its combination.
5. method according to claim 1 is characterized in that, among the described step B, line thickness is 20 μ m-200 μ m in the figure that made forms.
6. method according to claim 1 is characterized in that, among the described step C, the used diffuse source of diffusion technology can be one of solid, liquid, gas or its combination.
7. method according to claim 1 is characterized in that, among the described step C, the resistance of the side of described light dope concentration emitter is 70 Ω/-140 Ω/, and side's resistance of described medium-doped concentration semiconductor channel is 30 Ω/-65 Ω/.
8. method according to claim 1 is characterized in that, in the described step e, adopts ammonium hydroxide hydrogen peroxide mixed solution, hydrofluoric acid solution and hydrochloric acid hydrogen peroxide mixed solution, cleans described solar silicon wafers successively.
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| CN2011104438806A CN103187474A (en) | 2011-12-27 | 2011-12-27 | Method for reducing series resistance of emitter of selective-emitter solar cell |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101783374A (en) * | 2010-01-25 | 2010-07-21 | 宁波太阳能电源有限公司 | Method for manufacturing silicon solar cell |
| CN101872808A (en) * | 2010-06-04 | 2010-10-27 | 珈伟太阳能(武汉)有限公司 | Manufacturing method of selective emitter of crystalline silicon solar cell |
| CN101937940A (en) * | 2010-08-26 | 2011-01-05 | 常州天合光能有限公司 | Technology for manufacturing selective emitter junction solar cell by printed phosphorous source one-step diffusion method |
| CN101950780A (en) * | 2010-09-09 | 2011-01-19 | 浙江百力达太阳能有限公司 | Preparation method of selective emitter solar cell |
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2011
- 2011-12-27 CN CN2011104438806A patent/CN103187474A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101783374A (en) * | 2010-01-25 | 2010-07-21 | 宁波太阳能电源有限公司 | Method for manufacturing silicon solar cell |
| CN101872808A (en) * | 2010-06-04 | 2010-10-27 | 珈伟太阳能(武汉)有限公司 | Manufacturing method of selective emitter of crystalline silicon solar cell |
| CN101937940A (en) * | 2010-08-26 | 2011-01-05 | 常州天合光能有限公司 | Technology for manufacturing selective emitter junction solar cell by printed phosphorous source one-step diffusion method |
| CN101950780A (en) * | 2010-09-09 | 2011-01-19 | 浙江百力达太阳能有限公司 | Preparation method of selective emitter solar cell |
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Application publication date: 20130703 |