CN102468364A - Selective emitting electrode solar cell and manufacturing method thereof - Google Patents
Selective emitting electrode solar cell and manufacturing method thereof Download PDFInfo
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- CN102468364A CN102468364A CN2010105479387A CN201010547938A CN102468364A CN 102468364 A CN102468364 A CN 102468364A CN 2010105479387 A CN2010105479387 A CN 2010105479387A CN 201010547938 A CN201010547938 A CN 201010547938A CN 102468364 A CN102468364 A CN 102468364A
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Abstract
The invention relates to a selective emitting electrode solar cell and a manufacturing method thereof. The method comprises the following steps of: firstly, covering diffusion slurries in a predetermined area on the surface of a silicon wafer; drying the diffusion slurries; placing the silicon wafer into a diffusion furnace to diffuse, wherein the diffusion impurities of diffusion sources in the diffusion furnace and diffusion impurities of the diffusion slurries can be homology impurities; and finally, forming electrodes on the predetermined area. With the adoption of the selective emitting electrode solar cell and the manufacturing method thereof, the conversion efficiency of the solar battery can be improved; moreover, because of simple process and low cost, the selective emitting electrode solar cell is suitable for large-scale industrial production.
Description
Technical field
The invention belongs to the photovoltaic technology field, relate to the making of solar cell, relate in particular to a kind of selective emitter solar battery and preparation method thereof.
Background technology
Conventional crystal-silicon solar cell prepares steps such as process generally includes silicon chip cleaning, surface wool manufacturing, diffusion system knot, edge etching, deposition antireflection layer, prints electrode, common burning.Wherein, the silicon chip after the surface wool manufacturing is spread the system knot, thereby forms the P-N knot, this P-N knot near the surface be commonly called front or emitter.Be called as the back side with the pairing other one side in front.At present, the used main thermal diffusion method of crystal-silicon solar cell is the liquid source diffusion, and this technology is brought diffusion impurity in the diffusion furnace into through the method that gas carries diffuse source.In order to make silicon chip become solar cell, also must make front grid and back electrode respectively at front and back.The effect of front grid and back electrode is to collect and derive the electric energy that solar cell is produced after receiving light radiation.
In the manufacturing process of reality; Higher surface doping concentration (or weigh and mix or dark diffusion) can reduce the contact resistance between electrode and the silicon chip; Lower doping content (or claiming light dope or shallow diffusion) can be carried out surface passivation preferably; Reduce the recombination probability of few son, thereby improve the open circuit voltage and the short circuit current of battery.And the closer to the surface of battery, the generation rate of photo-generated carrier is high more, and is high more the closer to the collection rate of P-N knot photo-generated carrier, and therefore shallow diffusion can obtain high collection rate in the zone of high carrier generation rate, improves the short circuit current of battery.But shallow diffusion can make battery and silicon chip form high contact resistance, and lateral resistance also can increase thereupon, causes the series resistance of battery to increase, and fill factor, curve factor reduces.Therefore, for the crystal-silicon solar cell manufacturing process of routine, the concentration requirement of diffusion adapts to the needs that print electrode.Usually use control diffusion rear resistance to be the high-concentration dopant about 40-80 Ω/sq, but can bring the high compound of top layer thus, thus the conversion efficiency of limit battery.
The selective emitter technology is to be hopeful one of solution to the problems described above in the crystal-silicon solar cell production technology.Selective emitter is that the part or all of predeterminable area of the grid in corresponding front carries out the heavy doping of low square resistance, carries out the light dope of high square resistance in other zones, and such structure has been taken into account open circuit voltage simultaneously, the needs of short circuit current and fill factor, curve factor.
The key that realizes selective emitting electrode structure is said two different doped regions above how forming.Common way is to carry out twice thermal diffusion to form this structure.A kind of concrete technological process comprises: at first at silicon chip surface high-temperature thermal oxidation growthing silica layer, the corresponding window of photoetching predeterminable area on silicon dioxide layer then is then with POCl
3Spread deeply in the diffusion furnace for diffuse source, remove silicon dioxide layer subsequently and again with POCl
3For carrying out shallow diffusion in the diffusion furnace of diffuse source.Use this technology, in conjunction with SiN
4/ MgF
2Double layer antireflection coating is at 100cm
2Realize 15.9% conversion efficiency on the polysilicon.But owing to thisly carry out twice thermal diffusion and form that silicon chip has the elevated temperature heat process twice in the method for selective emitter, big and hear rate is also very big to the infringement of silicon chip, cause the control of quality and technology cost of P-N knot all not ideal.
This shows on large-scale production, the method for efficiently and cheaply making selective emitter solar battery is had very big demand.
Summary of the invention
The objective of the invention is to provide a kind of selective emitter solar battery and preparation method thereof, and this battery and preparation method thereof can improve the conversion efficiency of solar cell, and technology is simple, with low cost, is suitable for large-scale commercial production.
For realizing above-mentioned purpose, the invention provides a kind of manufacture method of selective emitter solar battery, said method comprises: the presumptive area on silicon chip surface covers the diffusion slurry, and the slurry of oven dry diffusion subsequently is fixed on the silicon chip it; Then said silicon chip is inserted and spread the system knot in the diffusion furnace, the diffusion impurity of diffuse source is an impurity of the same clan with the diffusion impurity of diffusion slurry in the said diffusion furnace; Then on said presumptive area, form electrode.
Preferably, can cover said diffusion slurry through silk screen printing or ink-jet (ink-jet).
Preferably, said diffusion slurry contains one or more pentels, and the promptly said N type that is doped to mixes.
Preferably, said diffusion slurry comprises the phosphorus slurry.
In an embodiment of the present invention, be printed on the said presumptive area through the electrode of silk screen printing, i.e. the high-concentration dopant district solar cell.Preferably, before printing electrode, utilize technique of alignment so that electrode is formed on the said presumptive area, promptly in the high-concentration dopant district, said technique of alignment comprises light source irradiation and CCD technology.
In an embodiment of the present invention, the figure of the shape of said presumptive area and electrode is complementary.Preferably, the live width of said presumptive area is than the wide 5%-100% of the grid line of electrode.
Preferably, said electrode is the main grid line and the secondary grid line of front electrode.
Preferably, said electrode is the secondary grid line of front electrode.
Preferably, the diffusion temperature scope of the diffusion system knot that is carried out is 800 ℃～950 ℃, and diffusion time, scope was 10～60 minutes.
The present invention also provides the solar cell through the manufacture method preparation of aforesaid selective emitter solar battery.
To combine concrete embodiment to describe method of the present invention below.
Description of drawings
Fig. 1 is the cross-sectional schematic of the crystal-silicon solar cell structure of routine;
Fig. 2 a is the front view of the prepared silicon chip with emitter of selective emitter solar battery manufacture method according to the present invention;
Fig. 2 b shows the process of mixing according to an embodiment of the invention;
Fig. 3 is a flow chart of making the method for selective emitter solar battery according to embodiments of the invention; And
Fig. 4 is the sketch map according to the crystal-silicon solar cell of embodiments of the invention making.
Embodiment
For making above-mentioned purpose of the present invention, feature and advantage more obviously understandable, below in conjunction with accompanying drawing and embodiment, further explain the present invention.Need to prove that each structure in the accompanying drawing is a schematic illustration, with so that those of ordinary skills understand principle of the present invention best, it is not necessarily drawn in proportion.
Fig. 1 is the cross-sectional schematic of the solar battery structure of routine.At present in the production of solar cell, usually with P type silicon chip as substrate, use pentels, like phosphorus, arsenic etc. silicon chip is carried out the N type and mixes, forming on silicon chip surface that P-N ties is emitter.Conventional technology is to carry out uniform high-concentration dopant on the surface of silicon chip, thereby on whole surface, obtains the square resistance of 40～80 Ω/sq of basically identical.
Fig. 2 a is the vertical view of the emitter of silicon chip according to an embodiment of the invention, and it has illustrated how to select to cover the presumptive area of diffusion slurry.Typically, in the one side that receives solar light irradiation of the silicon chip 20 that is used to make solar cell, form the front grid, the front grid comprises main grid line 21 and secondary grid line 22.In Fig. 2 a illustrated embodiment, many secondary grid line 22 left and right directions are arranged in parallel and engage with 21 square crossings of main grid line.The arrangement mode of the concrete quantity of secondary grid line 22 and main grid line 21 and main grid line 21 and secondary grid line 22 does not receive the restriction of the embodiment of the invention.The objective of the invention is to form the solar cell of selective emitting electrode structure; Promptly to carry out the doping of high concentration by area of grid in the front; And area of grid carries out the doping of low concentration in non-front, and therefore generally speaking said presumptive area is exactly the corresponding zone of front grid.Usually, it is identical substantially with the figure of desirable front grid that presumptive area is chosen as shape, but on the emitter of silicon chip, occupy the area more bigger than electrode zone.In the present embodiment, the live width of said presumptive area is than the wide 5%-100% of the grid line of front grid.
Electricity generating principle according to solar cell; The secondary grid line of electrode mainly plays collected current; And the main grid line mainly plays a part the electric current that secondary grid line is collected is compiled; Also when a plurality of solar cells are connected to form solar module through interconnector, be used as the connection matrix of interconnector simultaneously, interconnector is through welding or otherwise be connected and then realize with the main grid line series connection of a plurality of batteries.Therefore,, the doping content of secondary grid region is had than higher requirement, that is to say and only to carry out high-concentration dopant the secondary grid region of electrode in practice with respect to the main grid line of electrode.Shown in Fig. 2 a, the with dashed lines frame has been illustrated presumptive area 25, and the secondary grid line 22 of itself and electrode is all elongated rectangular shape, but live width is slightly larger than the width of secondary grid line.In this embodiment, the live width of said presumptive area is than the wide 5%-100% of the grid line of electrode.
The process of mixing according to an embodiment of the invention has been shown, wherein with P in Fig. 2 b
2O
5Process diffusion phosphorus slurry as diffuse source.It will be understood by those of skill in the art that said diffusion slurry can contain any optional diffuse source.Preferably, should use highly purified slurry, can not contain metal impurities, metal gets into silicon chip, particularly P-N interface when the heat to avoid, thereby forms the complex centre of photo-generated carrier, and the efficiency of solar cell that causes making is lower.Shown in Fig. 2 b; Phosphorus slurry 26 is printed on the presumptive area 25 on silicon chip 20 surfaces, fixes through oven dry, and silicon chip 20 is placed into diffusion furnace then; The diffusion that liquid source carried out is used in being diffused as of being carried out in the diffusion furnace, and existing industry liquid state diffusion source commonly used is POCl
3, nitrogen is fed POCl
3In the liquid source and the steam that carries this source in diffusion furnace tube, POCl
3Be decomposed to form P
2O
5And be deposited on silicon chip surface, POCl
3Decompose formed P
2O
5On positive other zones except that presumptive area 25 of silicon chip, diffuse to form light doping section, contained P in the phosphorus slurry
2O
5And POCl
3Decompose formed P
2O
5(mainly be contained P in the phosphorus slurry jointly
2O
5) diffuse to form heavily doped region to the positive presumptive area 25 of silicon chip, so promptly formed selective emitter in the silicon chip front.
Fig. 3 is a flow chart of making the method for selective emitter solar battery according to embodiments of the invention.It should be noted that for sake of clarity, omitted some necessary processes in the conventional solar cell manufacturing process therein, steps such as for example silicon chip cleaning, edge etching, dephosphorization silex glass, preparation antireflective coating.At first, in step S31, according to the selected presumptive area that will cover the diffusion slurry of electrode pattern, said electrode comprises the main grid line and the secondary grid line of front electrode or only comprises the secondary grid line of front electrode.In step S32,, will spread slurry through silk-screen printing technique or ink-jet and cover on the said presumptive area at the silicon chip surface that passes through cleaning and texturing.For the diffusion slurry is fixed on the silicon chip surface, in step S33, the diffusion slurry is carried out prebake, general bake out temperature is 40 ℃～400 ℃, is preferably 200～300 ℃, drying time is 15～240 seconds.After the fixing diffusion slurry; Silicon chip is inserted in the diffusion furnace; Spread the system knot in 800 ℃～950 ℃ temperature range and in 10～60 minutes the time range, in diffusion furnace, accomplish high-concentration dopant and other regional low concentration dopings of presumptive area simultaneously, shown in step S34.After the silicon chip of accomplishing diffusion system knot is through conventional operations such as edge etching, dephosphorization silex glass and preparation antireflective coatings; In step S35; On presumptive area, form electrode, utilize usually to comprise that technique of alignment such as light source irradiation and CCD technology guarantee that electrode is formed on presumptive area accurately through silk screen printing.
Fig. 4 is the sketch map according to the crystal-silicon solar cell of embodiments of the invention making.As shown in Figure 4, the square resistance of solar cell area of grid I in the front of the selective emitting electrode structure that makes through method of the present invention is approximately 5～40 Ω/sq, is approximately 50～300 Ω/sq at the square resistance of non-front area of grid II.Compare original technology, open circuit voltage has improved 1%～1.6%, and short circuit current has improved 1.5%, and final battery conversion efficiency has improved 1～3%.
Method provided by the invention has increased the operation that covers doping slurry and oven dry before the diffusion of the solar cell manufacture process of routine; Thereby can in diffusion furnace, once diffuse to form selective emitting electrode structure; Avoided in the prior art the secondary high-temperature process of silicon chip and the infringement that brings; Simplify technology simultaneously, practiced thrift cost.The open circuit voltage of the selective emitting electrode structure solar cell of making by this method, short circuit current and fill factor, curve factor all are improved, thereby make battery obtain higher photoelectric conversion efficiency.
Should be noted that; In another embodiment of selective emitter solar battery manufacture method of the present invention; Behind completing steps S31, S32 and S33, first aerating oxygen in diffusion furnace, it is that 900 ℃, time are that 30 minutes oxidation is to generate barrier oxide layer at silicon chip surface that silicon chip is carried out temperature; Thereby barrier oxide layer can stop the phosphorous diffusion in the phosphorus slurry to come out to form in other zones mixes, and generates simultaneously that the phosphorus slurry carries out heavy doping to silicon chip in the process of barrier oxide layer; Under the effect of said barrier oxide layer, in diffusion furnace, feed POCL afterwards
3And in the time range of 800 ℃～950 ℃ temperature ranges and 10～60 minutes, spread the system knot, in diffusion furnace, accomplish high-concentration dopant and other regional low concentration dopings of presumptive area simultaneously.Present embodiment has utilized the manageable advantage of liquid source even diffused to come unintended areas are carried out shallow doping, has avoided the unmanageable shortcoming of Solid State Source.
Should be noted that above embodiment is only in order to technical scheme of the present invention to be described but not limit it.Although the present invention has been carried out detailed explanation with reference to above-mentioned embodiment; Those of ordinary skill in the art is to be understood that; Still can specific embodiments of the invention make amendment or the part technical characterictic is equal to replacement and does not break away from essence of the present invention, it all be encompassed in the scope that the present invention asks for protection.
Claims (12)
1. the manufacture method of a selective emitter solar battery is characterized in that, said method comprises:
Presumptive area on silicon chip surface covers the diffusion slurry;
Dry said diffusion slurry;
Said silicon chip is inserted the system of spreading in the diffusion furnace tie, the diffusion impurity of diffuse source is an impurity of the same clan with the diffusion impurity of diffusion slurry in the said diffusion furnace; And
On said presumptive area, form electrode.
2. the manufacture method of selective emitter solar battery as claimed in claim 1 is characterized in that, covers said diffusion slurry through silk screen printing or ink-jet.
3. the manufacture method of selective emitter solar battery as claimed in claim 1 is characterized in that, said diffusion slurry contains one or more pentels.
4. method as claimed in claim 3 is characterized in that, said diffusion slurry comprises the phosphorus slurry.
5. the manufacture method of selective emitter solar battery as claimed in claim 1 is characterized in that, on said presumptive area, forms electrode through silk screen printing.
6. the manufacture method of selective emitter solar battery as claimed in claim 5 is characterized in that, utilizes technique of alignment so that electrode is formed on the said presumptive area, and said technique of alignment comprises light source irradiation and CCD technology.
7. the manufacture method of selective emitter solar battery as claimed in claim 1 is characterized in that, the shape of said presumptive area and the figure of electrode are complementary.
8. the manufacture method of selective emitter solar battery as claimed in claim 7 is characterized in that, the live width of said presumptive area is than the wide 5%-100% of the grid line of electrode.
9. like the manufacture method of claim 7 or 8 described selective emitter solar batteries, it is characterized in that said electrode is the main grid line and the secondary grid line of front electrode.
10. like the manufacture method of claim 7 or 8 described selective emitter solar batteries, it is characterized in that said electrode is the secondary grid line of front electrode.
11. the manufacture method of selective emitter solar battery as claimed in claim 1 is characterized in that, the diffusion temperature scope of the diffusion system knot that is carried out is 800 ℃～950 ℃, and diffusion time, scope was 10～60 minutes.
12. solar cell through the manufacture method preparation of each described selective emitter solar battery in the aforementioned claim.
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| CN2010105479387A CN102468364A (en) | 2010-11-05 | 2010-11-05 | Selective emitting electrode solar cell and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103022261A (en) * | 2012-12-28 | 2013-04-03 | 英利能源（中国）有限公司 | Method and system for producing solar cells |
| CN103680673A (en) * | 2012-08-31 | 2014-03-26 | 上海比亚迪有限公司 | Light-facing side seed layer paste for SE (Selective Emitter) crystalline silicon solar cell, preparation method for light-facing side seed layer paste, SE crystalline silicon solar cell, and preparation method for SE crystalline silicon solar cell |
| CN104465870A (en) * | 2014-11-21 | 2015-03-25 | 广西智通节能环保科技有限公司 | Solar cell emitting electrode and manufacturing method thereof |
| CN104465873A (en) * | 2014-12-03 | 2015-03-25 | 苏州贝多环保技术有限公司 | Selective emitting electrode solar cell and manufacturing method thereof |
| CN106409923A (en) * | 2012-08-09 | 2017-02-15 | 三菱电机株式会社 | Manufacturing method of solar cell |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409923A (en) * | 2012-08-09 | 2017-02-15 | 三菱电机株式会社 | Manufacturing method of solar cell |
| CN103680673A (en) * | 2012-08-31 | 2014-03-26 | 上海比亚迪有限公司 | Light-facing side seed layer paste for SE (Selective Emitter) crystalline silicon solar cell, preparation method for light-facing side seed layer paste, SE crystalline silicon solar cell, and preparation method for SE crystalline silicon solar cell |
| CN103680673B (en) * | 2012-08-31 | 2016-06-01 | 上海比亚迪有限公司 | SE crystal-silicon solar cell is to light face Seed Layer slurry and its preparation method, SE crystal-silicon solar cell and its preparation method |
| CN103022261A (en) * | 2012-12-28 | 2013-04-03 | 英利能源（中国）有限公司 | Method and system for producing solar cells |
| CN103022261B (en) * | 2012-12-28 | 2016-07-06 | 英利能源（中国）有限公司 | Make the method and system of solaode |
| CN104465870A (en) * | 2014-11-21 | 2015-03-25 | 广西智通节能环保科技有限公司 | Solar cell emitting electrode and manufacturing method thereof |
| CN104465873A (en) * | 2014-12-03 | 2015-03-25 | 苏州贝多环保技术有限公司 | Selective emitting electrode solar cell and manufacturing method thereof |
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Application publication date: 20120523 Assignee: WUXI DEXIN SOLAR POWER CO., LTD. Assignor: Wuxi Shangde Solar Electric Power Co., Ltd. Contract record no.: 2013990000143 Denomination of invention: Selective emitting electrode solar cell and manufacturing method thereof License type: Exclusive License Record date: 20130409 |
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