CN103680673B - SE crystal-silicon solar cell is to light face Seed Layer slurry and its preparation method, SE crystal-silicon solar cell and its preparation method - Google Patents
SE crystal-silicon solar cell is to light face Seed Layer slurry and its preparation method, SE crystal-silicon solar cell and its preparation method Download PDFInfo
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Abstract
The present invention relates to a kind of SE crystal-silicon solar cell to light face Seed Layer slurry, described to light face Seed Layer slurry be the mixture containing 70-85wt% metal function powder body, 2-10wt% unorganic glass powder and 5-20wt% organic carrier; Containing ball shaped nano antimony powder in described metal function powder body. Present invention also offers and adopt the method that crystalline silicon SE solar cell piece prepared by this Seed Layer slurry and the crystalline silicon SE solar cell piece prepared by the method. In SE crystal-silicon solar cell preparation method provided by the invention, by sintering after the dual printing of conductive silver slurry of light face and front side of silicon wafer to light face Seed Layer slurry and tradition, territory, selectively diffused regions is formed well under the silver electrode grid line of front, and electrode and silicon substrate adhere firmly, welding strength height, the contact resistance of electrode is little, packing factor height, make the average light photoelectric transformation efficiency of SE crystal-silicon solar cell provided by the invention more than 17.3%, and effectively reduced to light face electrode fabrication cost.
Description
Technical field
The present invention relates to area of solar cell, it is specifically related to a kind of SE crystal-silicon solar cell to light face Seed Layer slurry and its preparation method, a kind of SE crystal-silicon solar cell and the SE crystal-silicon solar cell for preparing by this preparation method.
Background technology
Sun power is as a kind of green energy resource, inexhaustible with it, pollution-free, be not more and more subject to people's attention by advantages such as resource advantage restrictions. Crystal-silicon solar cell is simple with its technical process, and transformation efficiency height, is convenient to the advantages such as scale operation and develops rapidly, and such battery occupies the share in current light volt market more than 80%. Existing crystal silicon solar energy battery is generally after printing aluminium slurry and back silver paste to the making method of light face electrode, adopt silk screen printing front conductive silver slurry, then cross after continuous tunnel furnace sinters and directly obtain front silver electrode, the short-circuit current of the making performance remarkably influenced battery of front electrode and photoelectric transformation efficiency.
A technique of the commonplace employing of current efficient solar battery is selective emitter (being called for short SE) battery structure, the method refers to heavily spread being formed under the metal electrode of light face, and shallow diffusion is formed in other regions, heavily spreading so locally, can make electrode and silicon form good ohmic contact, increase the packing factor of battery, and sub-compound can be reduced less at shallow diffusion zone, it is to increase the collection rate of photo-generated carrier. Use on producing at present realize selectivity diffused emitter battery preferably technology be direct printing mask layer method; this method feature is for by once heavily spreading; then the organic wax covering protection of spraying is adopted to need the region printing front electrode line; then adopt nitration mixture to corrode silicon chip, then form the emtting electrode region of shallow diffusion in not protected region. The shortcoming that the method exists: one is the equipment price costliness spraying organic wax, another is that border extension easily occurs in organic wax covering region, and corrosion obtains shallow diffusion zone and reduces, thus causes the reduction of battery efficiency, further, organic wax to be cleaned completely and also there is certain difficulty.
Slurry doping method is the scheme of the easiest acquisition selective emitter solar battery, its conventional thought is the phosphorus source mixing high density in silver paste, to expect that phosphorus infiltrates to form heavy doping in silicon in the process of sintering, but, in common sintering oven, furnace atmosphere and the external world are circulations, phosphorus in slurry easily volatilizees and run off when sintering, and, solid part major part or silver powder in silver paste, therefore, phosphorus is difficult to silicon chip substrate be reached the doping effect of expection in the slurry.
Summary of the invention
Being difficult to of the invention solves in prior art that the preparation SE crystal-silicon solar cell existed exists ensures to adulterate preferably effect, cost is higher and battery efficiency is low technical problem, and provides a kind of new SE crystal-silicon solar cell to light face Seed Layer slurry and its preparation method, a kind of SE crystal-silicon solar cell and its preparation method.
Therefore, the present invention provide a kind of SE crystal-silicon solar cell to light face Seed Layer slurry, described to light face Seed Layer slurry be the mixture containing 70-85wt% metal function powder body, 2-10wt% unorganic glass powder and 5-20wt% organic carrier; Containing ball shaped nano antimony powder in described metal function powder body.
Present invention also offers the preparation method to light face Seed Layer slurry of described SE crystal-silicon solar cell, comprise and unorganic glass powder is first scattered in organic carrier, then add metal function powder body in batches, it is ground to and obtains described SE crystal-silicon solar cell to light face Seed Layer slurry after slurry fineness is less than 5 ��m.
Further, present invention also offers the preparation method of a kind of SE crystal-silicon solar cell, comprise the following steps: first at silicon chip back side successively printed back conductive silver slurry and back field aluminum paste material, print provided by the invention to light face Seed Layer slurry at front side of silicon wafer after oven dry, adopt after oven dry and align technique in the continuation printing of Seed Layer slurry printed layers surface to light face conductive silver slurry, enter continuous tunnel furnace sintering, obtain described SE crystalline silicon solar cell piece.
Finally, the present invention provides a kind of SE crystal-silicon solar cell, and described SE crystal-silicon solar cell is prepared by preparation method provided by the invention.
SE crystal-silicon solar cell provided by the invention to light face Seed Layer slurry, its function powder is mainly ball shaped nano antimony powder, owing to the fusing point of nano stibium powder is lower than the fusing point of conventional antimony powder, more lower than the fusing point of aluminium powder, therefore in conventional solar cell sintering process, nano stibium powder can melting and adhere on silicon substrate, and owing to it has bigger specific surface area, therefore there is very strong sintering flowing activity, it is easier to infiltrate Siliciumatom gap at sintering high temperature section antimony atoms, or Siliciumatom position replaced thus shape is atom doped, and antimony and phosphorus belong to the 5th main group element, therefore this doping belongs to N-type doping, thus selective emitter (SE) region can be formed. in addition, provided by the invention to, in the Seed Layer slurry of light face, owing to not using or using argent on a small quantity, also reducing the cost of manufacture of cell piece front electrode.
In SE crystal-silicon solar cell preparation method provided by the invention, by sintering after the dual printing of conductive silver slurry of light face and front side of silicon wafer to light face Seed Layer slurry and tradition, it is thus possible to form territory, selectively diffused regions well under the silver electrode grid line of front, and electrode and silicon substrate adhere firmly, welding strength height, the contact resistance of electrode is little, packing factor height so that the average light photoelectric transformation efficiency of SE crystal-silicon solar cell provided by the invention is more than 17.3%. In addition, in the preparation method of SE crystal-silicon solar cell provided by the invention, it is not necessary to adopting the equipment required for direct printing mask method and mask material, once sintered by means of only twice printing, therefore technique simplifies greatly, and cost is effectively reduced.
Embodiment
The present invention provide a kind of SE crystal-silicon solar cell to light face Seed Layer slurry, described to light face Seed Layer slurry be the mixture containing 70-85wt% metal function powder body, 2-10wt% unorganic glass powder and 5-20wt% organic carrier; Containing ball shaped nano antimony powder in described metal function powder body.
SE crystal-silicon solar cell provided by the invention to light face Seed Layer slurry, its function powder is mainly ball shaped nano antimony powder, owing to the fusing point of nano stibium powder is lower than the fusing point (conventional antimony powder fusing point is 631 DEG C) of conventional antimony powder, more lower than the fusing point (aluminium powder fusing point is 660 DEG C) of aluminium powder, therefore in current conventional solar cell sintering process, nano stibium powder can melting and adhere on silicon substrate, and owing to it has bigger specific surface area, therefore there is very strong sintering flowing activity, it is easier to infiltrate Siliciumatom gap at sintering high temperature section antimony atoms, or Siliciumatom position replaced thus shape is atom doped, and antimony and phosphorus belong to the 5th main group element, therefore this doping belongs to N-type doping, thus selective emitter (SE) region can be formed.
In addition, provided by the invention to, in the Seed Layer slurry of light face, owing to not using or using argent on a small quantity, also reducing the cost of manufacture of cell piece front electrode.
In the present invention, the particle diameter of the ball shaped nano antimony powder adopted in described metal function powder body needs strict control; Particle diameter is too big, then be not enough to form nano effect, and Sb doped effect is not good; And particle diameter is too little, then the fusing point of antimony powder may being caused to reduce too many, when sintering, melting is run off, and causes the grid line shading area formed to increase, and the tooling cost of material also rises. Therefore, in the present invention, the middle particle diameter D of described ball shaped nano antimony powder50 1It is preferably 30 ~ 600nm, it is more preferable to be 50 ~ 250nm. The specific surface of described ball shaped nano antimony powder is preferably 3 ~ 8m2/ g, it is more preferable to be 4 ~ 5.5m2/g��
As a kind of preferred implementation of the present invention, also containing bismuth metal powder in described metal function powder body. The fusing point (271 DEG C) of bismuth metal is lower than metallic antimony, and also belongs to the 5th main group element, and silicon can be formed itself N-type doping; Further, from metal phase diagram it will be seen that antimony, bismuth can melt completely mutually, therefore the doping of antimony can be produced synergy adding of bismuth metal powder, impel antimony melting in advance, thus have the enough time that silicon is formed doping.
As another kind of preferred implementation of the present invention, also containing metallic tin powder in described metal function powder body, can increase the adding of tin powder described to light face Seed Layer slurry and follow-up routine to the ply adhesion between the conductive silver slurry of light face.
In the present invention, the bismuth powder added in described metal function powder body and tin powder are all preferably spherical powder particle, and its addition and size need to be controlled; As too many in bismuth powder or tin powder addition, particle diameter is too little, then the fusing point of function powder may be caused too low, slurry is in sintering process, and the fusion time is too long and runs off; In addition, as bismuth powder is too many, owing to the atomic volume spread coefficient bigger than antimony, in silicon of bismuth is less than antimony, its doping effect, not as antimony powder, can cause N-type doping effect bad. , it is more preferable in situation, therefore taking the total mass of described metal function powder body as benchmark, the addition of bismuth powder is 2 ~ 10wt%. The middle particle diameter D of described bismuth metal powder50 2It it is 0.1 ~ 3.5 ��m, it is preferable to 0.3 ~ 2.5 ��m.
Similarly, taking the total mass of described metal function powder body as benchmark, the addition of tin powder is 0.5 ~ 5wt%. The middle particle diameter D of described metallic tin powder50 3It it is 0.1 ~ 3.5 ��m, it is preferable to 0.3 ~ 2.5 ��m.
In the present invention, for reducing the volume resistance of the described seed grid line layer formed after light face Seed Layer slurry sintering, as a kind of preferred implementation of the present invention, described metal function powder body also can contain a small amount of spherical micro aluminum powder, and the addition of silver powder can be 1 ~ 10wt%. Under preferable case, the middle particle diameter D of described spherical micro aluminum powder50 4It it is 0.1 ~ 3.5 ��m, it is more preferable to be 0.3 ~ 2.5 ��m. The specific surface area of described spherical micro aluminum powder is 1 ~ 3.5m2/ g, tap density is 4 ~ 7g/cm3��
In the present invention, described unorganic glass powder, organic carrier can adopt various unorganic glass powder conventional in electrode slurry in prior art, organic carrier, and the present invention is not particularly limited.
Under preferable case, described unorganic glass powder is Bi2O3-B2O3-SiO2System glass powder, it specifically consists of: the Bi of 75 ~ 85wt%2O3, the B of 5 ~ 15wt%2O3, the SiO of 2 ~ 10wt%2, the TiO of the ZnO of 0.5 ~ 5wt%, 0 ~ 2wt%2. The middle particle diameter D of described unorganic glass powder50 5Be 0.1 ~ 1 ��m, softening temperature (Ts) be 400 ~ 450 DEG C.
In the present invention, described unorganic glass powder can directly adopt commercial products, it is possible to oneself preparation, preparation method is known to the skilled person. Such as, the method preparing described unorganic glass powder can be: adopts V-Mixer to be mixed by the oxide powder of each composition glass powder, proceed in corundum crucible and it is placed in silicon carbide rod furnace, 550 DEG C will be warming up in silicon carbide rod furnace, insulation 0.5h, being warming up to 1250 DEG C again, insulation 2h, shrend is filtered and is obtained granulated glass sphere; Then this granulated glass sphere being loaded ball grinder, in mass ratio zirconia ball: granulated glass sphere: deionized water=4:1:0.7, tank speed 300 revs/min, wet-milling 6.5h, filters post-drying, then the 0.5h that dry grinds, and during dry grinding, the mass ratio of zirconia ball and glass powder is 1:2.
Described organic carrier can directly adopt commercial products, it is possible to oneself preparation, preparation method is known to the skilled person. Such as, the method preparing described organic carrier can be: is dissolved in the mixed solvent being made up of two or more conventional organic solvent by various organic carrier usual component such as ethyl cellulose, lubricant, thixotropic agent, stir at 50 ~ 80 DEG C and evenly make it fully dissolve, the transparent organic carrier of equal can be obtained. Wherein organic solvent can be selected from Terpineol 350, dibutyl phthalate, diethylene glycol monobutyl ether (DBP), turps, diethylene glycol monobutyl ether acetic ester, butyl glycol ether, ethylene glycol ether acetate, lauryl alcohol ester.
Present invention also offers the preparation method to light face Seed Layer slurry of described SE crystal-silicon solar cell, comprise and unorganic glass powder is first scattered in organic carrier, then add metal function powder body in batches, it is ground to and obtains described SE crystal-silicon solar cell to light face Seed Layer slurry after slurry fineness is less than 5 ��m.
Wherein, dispersion can adopt high speed dispersor to carry out. Under preferable case, the number of times in batches of described function powder is 2-3 time, stirs evenly every time, then add next batch after adding; After all adding, high-speed stirring is even. Described grinding can adopt three-roll grinder to carry out, and is ground to slurry fineness and is less than 5 ��m.
Present invention also offers the preparation method of a kind of SE crystal-silicon solar cell, comprise the following steps: first at silicon chip back side successively printed back conductive silver slurry and back field aluminum paste material, print provided by the invention to light face Seed Layer slurry at front side of silicon wafer after oven dry, adopt after oven dry and align technique in the continuation printing of Seed Layer slurry printed layers surface to light face conductive silver slurry, enter continuous tunnel furnace sintering, obtain described SE crystalline silicon solar cell piece.
In SE crystal-silicon solar cell preparation method provided by the invention, by sintering after the dual printing of conductive silver slurry of light face and front side of silicon wafer to light face Seed Layer slurry and tradition, it is thus possible to form territory, selectively diffused regions well under the silver electrode grid line of front, and electrode and silicon substrate adhere firmly, welding strength height, the contact resistance of electrode is little, packing factor height so that the average light photoelectric transformation efficiency of SE crystal-silicon solar cell provided by the invention is more than 17.3%.
In addition, in the preparation method of SE crystal-silicon solar cell provided by the invention, it is not necessary to adopting the equipment required for direct printing mask method and mask material, once sintered by means of only twice printing, therefore technique simplifies greatly, and cost is effectively reduced.
In the present invention, described back silver electrocondution slurry, back field aluminum paste material and be the various conventional slurries that those skilled in the art commonly use to light face conductive silver slurry, its printing process can directly adopt the method for printing screen that those skilled in the art commonly use, the present invention is not particularly limited, and repeats no more herein. It is with should be noted that, when printing to light face conductive silver slurry, it is necessary to ensure that it aligns with the Seed Layer slurry printed layers of front side of silicon wafer.
Described silicon chip can be monocrystalline silicon piece or polysilicon chip, and the present invention is not particularly limited.
In the present invention, the method for printing Seed Layer slurry is preferably silk screen printing. The web plate that under preferable case, described silk screen printing can adopt 360 orders, live width to be 25 ��m, thickness is 3 ��m carries out, but is not limited to this. During silk screen printing, the printing consumption of Seed Layer slurry suitably can be selected according to the size of cell piece. Under preferable case, during printing Seed Layer slurry, printing wet-film thickness is 5 ~ 10 ��m, and the weight in wet base of printing is 25 ~ 55mg.
Print the consumption to light face conductive silver slurry suitably to select to light face electrode height according to reality. Under preferable case, when printing is to light face conductive silver slurry, printing wet-film thickness is 10 ~ 15 ��m.
According to preparation method provided by the invention, after printing slurry, silicon chip entirety can be sent in continuous tunnel furnace and sinter. Under preferable case, during sintering, preheating temperature is 200 ~ 500 DEG C, and peak temperature is 910 ~ 930 DEG C. The whole time crossing continuous tunnel furnace is 3 ~ 5min, and wherein under peak temperature, sintering time is 2 ~ 5s.
Finally, the present invention provides a kind of SE crystal-silicon solar cell, and described SE crystal-silicon solar cell is prepared by preparation method provided by the invention.
Adopt the SE crystal-silicon solar cell that preparation method provided by the invention prepares, good to light face gate electrode line outward appearance, with the welding strength height of photovoltaic welding belt, good with silicon substrate adhesion property, and the packing factor of battery has remarkable increase, average light photoelectric transformation efficiency is more than 17.3%.
Below in conjunction with embodiment, the present invention is described further. Being adopted raw material to be all commercially available in embodiment and comparative example, the present invention is not particularly limited.
Embodiment 1
(1) preparation of unorganic glass powder
Get the Bi of 83wt%2O3, 8wt% B2O3, 6wt% SiO2, 2wt% the TiO of ZnO, 1wt%2, adopt V-Mixer to mix, load in porcelain crucible, put into silicon carbide rod furnace, heat up and be preheating to 550 DEG C, insulation 0.5h, being warming up to 1250 DEG C again, melting 0.5h, shrend is filtered, the granulated glass sphere obtained is loaded ball grinder, and Mass Control is than zirconia ball: granulated glass sphere: deionized water=4:1:0.7, tank speed 300 revs/min, ball milling 7h, filtering drying, then the 1h that dry grinds, during dry grinding, the mass ratio of zirconia ball and granulated glass sphere is 1:2, obtains the unorganic glass powder of the present embodiment, tests wherein particle diameter D50 5It is 0.67 ��m, softening temperature (Ts) it is 432 DEG C.
(2) preparation of organic carrier
According to quality than lauryl alcohol ester: diethylene glycol monobutyl ether: diethylene glycol monobutyl ether acetic ester=70:20:10 is mixed, and obtains mixed solvent. Taking carrier total mass as benchmark, get 13wt% ethyl cellulose STD-100 (it is 100 that Tao Shi produces viscosity), 2.0wt% hexadecanol, 2.0wt% hydrogenated castor oil, 83wt% mixed solvent, is heated to 75 DEG C and makes it fully dissolve, and stir evenly, obtain the organic carrier of equal.
(3) to the preparation of light face Seed Layer slurry S1
Taking the total mass of metal function powder body as benchmark, get metallic antimony powder (the middle particle diameter D of 92wt%50 1Being 120 �� 20nm, Beijing De Kedao brilliant science and technology limited-liability company produces, purity >=99.90%, subsequent embodiment unless stated otherwise, otherwise antimony powder parameter is identical with the present embodiment), 5wt% bismuth powder (middle particle diameter D50 2Be 1.20 �� 0.25 ��m, Shanghai Hong Rui Industry Co., Ltd production purity >=99.90%, subsequent embodiment unless stated otherwise, otherwise bismuth powder parameter is identical with the present embodiment), metallic tin powder (the middle particle diameter D of 3wt%50 3Being 1.50 �� 0.30 ��m, paddy field, Shanghai material Science and Technology Ltd. produces, purity >=99.90%, subsequent embodiment is unless stated otherwise, otherwise tin powder parameter is identical with the present embodiment), adopt V-Mixer to mix, obtain the metal function powder body of the present embodiment.
Taking to light face Seed Layer slurry total mass as benchmark, get the organic carrier that 15wt% is obtained by step (2), it is placed in the stainless cylinder of steel of high speed dispersor, while stirring, while adding the unorganic glass powder that 5wt% step (1) is obtained, stir evenly, then divide and add 80wt% metal function powder body for 3 times, after adding, first stir even adding again next time every time; After all adding, high-speed stirring is even. Finally adopt three-roll grinder to carry out being ground to slurry fineness and be less than 5 ��m, obtain the present embodiment to light face Seed Layer slurry S1.
Embodiment 2
Adopt the step identical with embodiment 1 prepare the present embodiment to light face Seed Layer slurry S2, difference is:
In step (3), the component of metal function powder body is: the metallic antimony powder of 97.5wt%, 2wt% bismuth powder, the metallic tin powder of 0.5wt%;
By above-mentioned steps, obtain the present embodiment to light face Seed Layer slurry S2.
Embodiment 3
Adopt the step identical with embodiment 1 prepare the present embodiment to light face Seed Layer slurry S3, difference is:
In step (3), the component of metal function powder body is: the metallic antimony powder of 85wt%, 10wt% bismuth powder, the metallic tin powder of 5wt%;
By above-mentioned steps, obtain the present embodiment to light face Seed Layer slurry S3.
Embodiment 4
Adopt the step identical with embodiment 1 prepare the present embodiment to light face Seed Layer slurry S4, difference is:
In step (3), the component of metal function powder body is: the metallic antimony powder of 100wt%;
By above-mentioned steps, obtain the present embodiment to light face Seed Layer slurry S4.
Embodiment 5
Adopt the step identical with embodiment 1 prepare the present embodiment to light face Seed Layer slurry S5, difference is:
In step (3), the component of metal function powder body is: the metallic antimony powder of 87wt%, 5wt% bismuth powder, the metallic tin powder of 3wt%, the spherical micro aluminum powder of 5wt% (particle diameter D in silver powder50 4Being 1.10 �� 0.25 ��m, specific surface area is 1.8 �� 0.5m2/ g, tap density is 4.5 �� 1.0g/cm3, adopt chemical reduction method to produce, DOWA company of Japan);
By above-mentioned steps, obtain the present embodiment to light face Seed Layer slurry S5.
Embodiment 6
Adopt the step identical with embodiment 1 prepare the present embodiment to light face Seed Layer slurry S6, difference is:
In step (3), in metal function powder body: the middle particle diameter D of metallic antimony powder50 1It is 580 �� 20nm, particle diameter D in bismuth metal powder50 2It is 2.5 �� 0.2 ��m, the middle particle diameter D of metallic tin powder50 3It it is 2.7 �� 0.3 ��m;
By above-mentioned steps, obtain the present embodiment to light face Seed Layer slurry S6.
Embodiment 7
Adopt the step identical with embodiment 1 prepare the present embodiment to light face Seed Layer slurry S7, difference is:
In step (3), the consumption of metal function powder body is 70wt%, and the consumption of unorganic glass powder is 10wt%, and the consumption of organic carrier is 20wt%;
By above-mentioned steps, obtain the present embodiment to light face Seed Layer slurry S7.
Comparative example 1
Adopt the step identical with embodiment 1 prepare this comparative example to light face Seed Layer slurry DS1, difference is:
In step (3), adopt pure spherical micro aluminum powder (the particle diameter D in silver powder of equal quality per-cent50 4Being 0.90 �� 0.15 ��m, specific surface area is 1.40 �� 0.25m2/ g, tap density is 4.22 �� 0.50g/cm3, adopt chemical reduction method to produce, DOWA company of Japan) and metal function powder body in alternative embodiment 1;
By above-mentioned steps, obtain this comparative example to light face Seed Layer slurry DS1.
Comparative example 2
Adopt the step identical with embodiment 1 prepare this comparative example to light face Seed Layer slurry DS1, difference is:
In step (2), getting 8.7wt% ethyl cellulose STD-4 (Tao Shi produce, viscosity is 4), 1.3wt% hexadecanol, 3wt% hydrogenated castor oil, 87wt% mixed solvent, is heated to 75 DEG C and makes it fully dissolve, and stirs evenly, obtains the organic carrier of equal;
In step (3), get 85wt% fine silver powder (middle particle diameter D50 4Being 0.60 �� 0.25 ��m, specific surface area is 2.5 �� 0.6m2/ g, tap density is 6.25 �� 1.00g/cm3, adopt chemical reduction method produce, Japan SHOEICHEMICALINC), 5wt% unorganic glass powder, 10wt% organic carrier, is stirred with agitator, then through milling processing, obtain this comparative example to light face electrocondution slurry DS2.
Embodiment 8
Polysilicon chip specification: 156 �� 156mm, thickness is 200 ��m (before corrosion), and before printing, thickness is 180 ��m. First adopt 200 object silk screen printing back silver slurry (Du Pont PV505, three eight sections, line systems, printing weight in wet base is 0.035 ~ 0.05g), 150 DEG C of oven dry, adopt 280 object silk screen printing back field aluminum paste material (large standing grain 108C again, printing weight in wet base is 1.40 ~ 1.6g), 150 DEG C of oven dry, drying time is 5 minutes. Then adopt 360 orders, live width to be 25 ��m, thickness be 3 ��m silk screen by light face Seed Layer slurry S1 be printed in silicon chip to, on light face, printing wet-film thickness is 6.0 �� 2.0 ��m of printing weight in wet bases is 30 ~ 35mg, dries. Then adopting and align technique and print commercially available to light face conductive silver slurry (Du Pont 70A) on the Seed Layer pulp layer of drying, printing wet-film thickness is 10 ~ 15 ��m. Finally silicon chip entirety being sent into and dry sintering in continuous tunnel furnace, preheating temperature is 200 ~ 500 DEG C, and peak temperature is 925 DEG C, the whole time crossing continuous tunnel furnace be 3 points 48 seconds, peak value sintering time is 4s, obtains the SE crystal-silicon solar cell of the present embodiment, is designated as S ' 1.
Embodiment 9-14
Adopting the step identical with embodiment 8 to prepare SE crystal-silicon solar cell S ' 2-S ' 7, difference is: adopts respectively and replaces the S1 in embodiment 8 to light face Seed Layer slurry S2-S7.
Comparative example 3
Adopting the step identical with embodiment 8 to prepare SE crystal-silicon solar cell DS ' 1, difference is: adopts and replaces the S1 in embodiment 8 to light face Seed Layer slurry DS1.
Comparative example 4
Polysilicon chip specification: 156 �� 156mm, thickness is 200 ��m (before corrosion), and before printing, thickness is 180 ��m. First adopt 200 object silk screen printing back silver slurry (Du Pont PV505, three eight sections, line systems, printing weight in wet base is 0.035 ~ 0.05g), 150 DEG C of oven dry, adopt 280 object silk screen printing back field aluminum paste material (large standing grain 108C again, printing weight in wet base is 1.40 ~ 1.6g), 150 DEG C of oven dry, drying time is 5 minutes. Then adopt 360 orders, live width to be 30 ��m, thickness be 5 ��m silk screen by light face electrocondution slurry DS2 be printed in silicon chip to, on light face, printing wet-film thickness is 20 �� 3 ��m, and printing weight in wet base is 145 ~ 170mg, oven dry. Then silicon chip entirety being sent into and dry sintering in continuous tunnel furnace, preheating temperature is 200 ~ 400 DEG C, and peak temperature is 910 DEG C, the whole time crossing continuous tunnel furnace be 2 points 20 seconds, peak value sintering time is 1s, obtains the SE crystal-silicon solar cell of this comparative example, is designated as DS ' 2.
Performance test
The present invention adopts 200 batteries to test, the data fetch mean value recorded.
(1) surface appearance: adopt 3 ~ 5 times of magnifying glasses to observe the surface appearance to light face electrode of each SE crystal-silicon solar cell S ' 1-S ' 7 and DS ' 1-DS ' 2, if smooth surface, without plot point, without broken string, without hole phenomenon, being designated as OK, otherwise is designated as NG.
(2) welding strength: select victory footpath between fields, Shanghai 2mm(width) �� 0.2mm(is thick) tin lead welding band, soak post-drying with Henkel X32-10I type soldering flux, then at 330 DEG C, electrode main grid line is carried out manual welding. After cell piece naturally cooling, it may also be useful to mountain degree SH-100 pushes away tensiometer, along 135 �� of directions, welding peeled off test, surveys its Average peel force, and unit is N/mm.
(3) with the adhesion strength of silicon chip: whole for silicon chip back surface is printed tested slurry S1-S7 and DS1-DS2, after crossing continuous tunnel furnace sintering, silicon chip, EVA and TPT after photovoltaic glass, EVA, printing slurry also being sintered stack in order, and carry out layer pressure, the wide strip of 2cm is carved with cutter, using mountain degree SH-100 to push away tensiometer, along 135 �� of directions, it is carried out tensile test, survey the Average peel force on its unit width, unit is N/mm.
(4) packing factor and electricity conversion: adopt single flash simulation testing tool that each SE crystal-silicon solar cell S ' 1-S ' 7 and DS ' 1-DS ' 2 is carried out test and obtain. Test condition is standard test condition (STC): light intensity: 1000W/m2; Spectrum: AM1.5; Temperature: 25 DEG C.
Test result is as shown in table 1 below.
Table 1
��
As can be seen from S ' 1-S ' 7 compares with DS ' 1-DS ' 2 test result in table 1, adopt the SE crystal-silicon solar cell prepared to light face Seed Layer slurry and battery preparation method of the present invention, it is good to light face gate electrode line outward appearance, with the welding strength height of photovoltaic welding belt, good with silicon substrate adhesion property, especially the packing factor of battery has remarkable increase, and average light photoelectric transformation efficiency is more than 17.30%. In addition, slurry does not use or uses argent on a small quantity, significantly reduce the cost of manufacture to light face electrode, add the competitive power of crystal-silicon solar cell generating with tradition generating.
The foregoing is only the better embodiment of the present invention, not in order to limit the present invention, all any amendment, equivalent replacement and improvement etc. done within the spirit and principles in the present invention, all should be included within protection scope of the present invention.
Claims (16)
1. a SE crystal-silicon solar cell to light face Seed Layer slurry, it is characterised in that, described to light face Seed Layer slurry be the mixture containing 70-85wt% metal function powder body, 2-10wt% unorganic glass powder and 5-20wt% organic carrier; Containing ball shaped nano antimony powder in described metal function powder body.
2. according to claim 1 to light face Seed Layer slurry, it is characterised in that, the middle particle diameter D of described ball shaped nano antimony powder50 1It is 30 ~ 600nm; Specific surface area is 3 ~ 8m2/g��
3. according to claim 2 to light face Seed Layer slurry, it is characterised in that, the middle particle diameter D of described ball shaped nano antimony powder50 1It is 50 ~ 250nm; Specific surface area is 4 ~ 5.5m2/g��
4. according to the arbitrary item of claim 1-3 to light face Seed Layer slurry, it is characterised in that, also containing spherical metal bismuth powder in described metal function powder body; Taking the total mass of described metal function powder body as benchmark, the content of spherical metal bismuth powder is 2 ~ 10wt%.
5. according to claim 4 to light face Seed Layer slurry, it is characterised in that, the middle particle diameter D of described spherical metal bismuth powder50 2It it is 0.1 ~ 3.5 ��m.
6. according to the arbitrary item of claim 1-3 to light face Seed Layer slurry, it is characterised in that, also containing spherical metal tin powder in described metal function powder body; Taking the total mass of described metal function powder body as benchmark, the content of spherical metal tin powder is 0.5 ~ 5wt%.
7. according to claim 6 to light face Seed Layer slurry, it is characterised in that, the middle particle diameter D of described spherical metal tin powder50 3It it is 0.1 ~ 3.5 ��m.
8. according to the arbitrary item of claim 1-3 to light face Seed Layer slurry, it is characterised in that, also containing spherical micro aluminum powder in described metal function powder body; Taking the total mass of described metal function powder body as benchmark, the content of spherical micro aluminum powder is 1 ~ 10wt%.
9. according to claim 8 to light face Seed Layer slurry, it is characterised in that, the middle particle diameter D of described spherical micro aluminum powder50 4Being 0.1 ~ 3.5 ��m, specific surface area is 1 ~ 3.5m2/ g, tap density is 4 ~ 7g/cm3��
10. according to claim 1 to light face Seed Layer slurry, it is characterised in that, described unorganic glass powder is Bi2O3-B2O3-SiO2System glass powder, it specifically consists of: the Bi of 75 ~ 85wt%2O3, the B of 5 ~ 15wt%2O3, the SiO of 2 ~ 10wt%2, the TiO of the ZnO of 0.5 ~ 5wt%, 0 ~ 2wt%2��
11. according to claim 1 or 10 to light face Seed Layer slurry, it is characterised in that, the middle particle diameter D of described unorganic glass powder50 5Be 0.1 ~ 1 ��m, softening temperature be 400 ~ 450 DEG C.
The preparation method to light face Seed Layer slurry of 12. SE crystal-silicon solar cells according to claim 1, it is characterized in that, comprise and unorganic glass powder is first scattered in organic carrier, then add metal function powder body in batches, it is ground to and obtains described SE crystal-silicon solar cell to light face Seed Layer slurry after slurry fineness is less than 5 ��m.
The preparation method of 13. 1 kinds of SE crystal-silicon solar cells, it is characterized in that, comprise the following steps: first at silicon chip back side successively printed back conductive silver slurry and back field aluminum paste material, after oven dry front side of silicon wafer print described in the arbitrary item of claim 1-11 to light face Seed Layer slurry, adopt after oven dry and align technique in the continuation printing of Seed Layer slurry printed layers surface to light face conductive silver slurry, enter continuous tunnel furnace sintering, obtain described SE crystalline silicon solar cell piece.
14. preparation methods according to claim 13, it is characterised in that, the method for printing Seed Layer slurry is silk screen printing, and printing wet-film thickness is 5-10 ��m; Printing to the method for light face conductive silver slurry is silk screen printing, and printing wet-film thickness is 10-15 ��m.
15. preparation methods according to claim 13, it is characterised in that, preheating temperature during sintering is 200 ~ 500 DEG C, and peak temperature is 910 ~ 930 DEG C, and the whole time crossing continuous tunnel furnace is 3 ~ 5min, and peak value sintering time is 2 ~ 5s.
16. 1 kinds of SE crystal-silicon solar cells, it is characterised in that, described SE crystal-silicon solar cell is prepared by the preparation method described in the arbitrary item of claim 13-15.
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| CN102637467A (en) * | 2012-04-27 | 2012-08-15 | 苏州晶讯科技股份有限公司 | Conductive paste for front electrode of silicon crystal solar battery |
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| JP4986745B2 (en) * | 2007-07-05 | 2012-07-25 | Ｄｏｗａエレクトロニクス株式会社 | Silver paste |
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| CN102194672A (en) * | 2010-01-25 | 2011-09-21 | 日立化成工业株式会社 | Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell |
| CN102185005A (en) * | 2010-10-18 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method for manufacturing selective emitter battery |
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