CN103168413A - 多沟道型dc-dc转换器 - Google Patents

多沟道型dc-dc转换器 Download PDF

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CN103168413A
CN103168413A CN2012800032035A CN201280003203A CN103168413A CN 103168413 A CN103168413 A CN 103168413A CN 2012800032035 A CN2012800032035 A CN 2012800032035A CN 201280003203 A CN201280003203 A CN 201280003203A CN 103168413 A CN103168413 A CN 103168413A
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coil
conductor
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connecting wiring
load current
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CN103168413B (zh
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樋江井智庆
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Murata Manufacturing Co Ltd
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/44Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383Multilayer substrates
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1584Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0083Converters characterised by their input or output configuration
    • H02M1/009Converters characterised by their input or output configuration having two or more independently controlled outputs
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dc-Dc Converters (AREA)

Abstract

提供可将辐射噪声抑制在最小限的多沟道型DC-DC转换器。在构成多个沟道的线圈导体中,使负荷电流最小的沟道的线圈导体与开关IC之间的布线最长,由此可对最容易辐射噪声的布线使用负荷电流最小的沟道,从而将辐射噪声抑制在最小限。另外,优选,在多个线圈导体中,使与负荷电流最大的线圈导体连接的连接布线最短。在情况下,能够对最不容易辐射噪声的布线使用负荷电流最大的沟道,从而能够更加抑制辐射噪声。

Description

多沟道型DC-DC转换器
技术领域
该发明涉及搭载有开关元件的DC-DC转换器,尤其涉及多沟道型DC-DC转换器。
背景技术
以往,公知有一种通过在磁性体基板内部形成线圈图案,并在磁性体基板上部安装开关IC,由此实现DC-DC转换器(例如参照专利文献1)。
另外,还公知有一种在一个磁性体基板内部形成多个线圈,构成多沟道型DC-DC转换器(例如参照专利文献2)的技术。
专利文献1:国际公开第2008/087781号
专利文献2:日本特开2004-343976号公报
对于上述那样的DC-DC转换器而言,的开关IC的Vout端子与线圈之间最容易受噪声影响,因此优选在磁性体基板上面使Vout端子与线圈之间的布线尽可能短。
但是,通常,开关IC的Vout端子被集中在一处。由此,在磁性体基板上面,在从开关IC的Vout端子连接至各线圈的布线中一定会产生需要有相对较长的布线的沟道。
发明内容
于是,本发明目的在于,提供一种将噪声的影响抑制在最小限的多沟道型DC-DC转换器。
本发明的多沟道型DC-DC转换器具备:在内部形成有多个线圈导体的层叠体;设置在上述层叠体主面上,并经由连接布线而与上述多个线圈导体电连接的多个盘电极(Land electrode);以及与上述多个盘电极连接的控制IC,且该控制IC具有多个输入端子或者输出端子。并且,上述多沟道型DC-DC转换器特征在于,与上述多个线圈导体中电流最小的线圈导体连接的上述连接布线最长。
这样,在构成多个沟道的线圈导体中,使负荷电流最小的沟道的线圈导体与开关IC之间的布线最长,由此使最容易受噪声影响的布线使用噪声最小的沟道,从而可将噪声的影响抑制在最小限。
另外,优选,与多个线圈导体中电流最大的线圈导体连接的上述连接布线最短。在该情况下,使最不容易受噪声影响的布线使用噪声最大的沟道,从而能够更加抑制噪声的影响。
根据本发明,即使使用端子被集中在一处的开关IC,也能够将噪声影响抑制在最小限。
附图说明
图1是表示多沟道型DC-DC转换器的俯视图和横剖面图的图。
图2是多沟道型DC-DC转换器为降压型DC-DC转换器时的电路图。
图3是多沟道型DC-DC转换器为升压型DC-DC转换器时的电路图。
具体实施方式
图1(A)是本发明的实施方式的多沟道型DC-DC转换器的俯视图(表示层叠体主面的图),图1(B)是层叠体中的形成有线圈导体的部分的横剖面图。
图2是本实施方式的多沟道型DC-DC转换器为降压型DC-DC转换器时的电路图,图3是本实施方式的多沟道型DC-DC转换器为升压型DC-DC转换器时的电路图。
如图1(A)和图1(B)所示,本实施方式的多沟道型DC-DC转换器1是在由多个陶瓷生片(Ceramics green sheet)层叠而成的层叠体2的最上面搭载了开关IC3和电容器等(在图1中不图示)电子部件而得的转换器。层叠体2包括磁性体(磁铁)层,例如,通过在层叠的片材间设置线圈导体,构成在层叠方向上连接的电感线圈,由此可实现将该电感线圈作为扼流圈来使用的DC-DC转换器。
如图1(B)所示,在本实施方式的层叠体2中设置有多个线圈导体。通过将用不同占空比驱动的开关元件与这些多个线圈导体连接,能够分别得到不同输出电压。本实施方式的多沟道型DC-DC转换器1是设置有线圈导体L1、线圈导体L2、线圈导体L3以及线圈导体L4的4沟道型DC-DC转换器。
在层叠体2的最上面形成有连接着开关IC3的盘电极11、盘电极12、盘电极13以及盘电极14。另外,在层叠体2的最上面形成有分别与线圈导体L1的主面侧端部21、线圈导体L2的主面侧端部22、线圈导体L3的主面侧端部23以及线圈导体L4的主面侧端部24连接的连接布线31、连接布线32、连接布线33以及连接布线34。
开关IC3具有俯视时呈四角形形状的外观,并呈各端子从四个边突出的形状。在开关IC3的内部集成有4个开关元件,4个开关节点端子(Vout端子)从一个边突出。这些4个Vout端子分别与盘电极11、盘电极12、盘电极13以及盘电极14连接并经由连接布线31、连接布线32、连接布线33以及连接布线34分别与线圈导体L1、线圈导体L2、线圈导体L3以及线圈导体L4连接。
如图2所示,在降压型DC-DC转换器的情况下,各Vout端子(Vout1、Vout2、Vout3以及Vout4)分别与线圈导体L1、线圈导体L2、线圈导体L3以及线圈导体L4的输入侧连接。如图3所示,在升压型DC-DC转换器的情况下,各Vout端子(Vout1、Vout2、Vout3以及Vout4)分别与线圈导体L1、线圈导体L2、线圈导体L3以及线圈导体L4的输出侧连接,因此各Vout端子实际是输入端子。
在层叠体2的最上面还安装(搭载)有电容等,因此开关IC3被安装在层叠体2的最上面中的偏离中央的位置。在本实施方式中,安装在图1(A)的偏纸面左上侧的位置。利用这样的开关方式的DC-DC转换器中,由于在开关IC3的Vout端子与线圈导体之间流通开关噪声被重叠得最严重的信号,因此辐射噪声容易变大。因此,优选使各连接布线尽可能短。但是,开关IC3安装在主面上偏离中央的位置,而Vout端子集中在一边,所以各Vout端子(Vout1、Vout2、Vout3以及Vout4)与各线圈导体的主面侧端部之间的距离成为分别不同的长度,连接布线31、连接布线32、连接布线33以及连接布线34的长度成为分别不同的长度。
于是,本实施方式的多沟道型DC-DC转换器1被构成为,通过使负荷电流最小的沟道的连接布线变得最长,来将辐射噪声抑制为最小限。
参照图1(A)和图1(B)对各构成的配置关系进行说明。开关IC3被安装在偏纸面左上侧的位置,并将Vout端子配置在开关IC3的位于层叠体2的中央侧的一个边上。各Vout端子从纸面左侧开始按Vout1、Vout2、Vout3、Vout4的顺序排列。线圈导体L1被配置在纸面左上侧,主面侧端部21被配置在线圈导体L1中的纸面左下侧。线圈导体L2被配置在纸面左下侧,主面侧端部22被配置在线圈导体L2中的纸面左上侧。线圈导体L3被配置在纸面右下侧,主面侧端部23被配置在线圈导体L3中的纸面左上侧。线圈导体L4被配置在纸面右上侧,主面侧端部24被配置在线圈导体L4中的纸面右上侧。
因此,在层叠体2的最上面中,线圈导体L1的主面侧端部21被配置在层叠体2的最上面中的中央略上侧且纸面左侧,线圈导体L2的主面侧端部22被配置在中央的略下侧且纸面左侧,线圈导体L3的主面侧端部23被配置在中央略右下侧,线圈导体L4的主面侧端部24被配置在纸面右上侧。
因此,主面侧端部21距离Vout端子最近,主面侧端部24距离Vout端子最远。因此,在Vout端子中,连接被配置在最左侧的Vout1与主面侧端部21的连接布线31最短,连接Vout4与主面侧端部24的连接布线34最长。
于是,针对Vout1的沟道连接负荷电流最大的线圈导体L1,且针对Vout4的沟道连接负荷电流最小的线圈导体L4。在本实施方式中,线圈导体L1的负荷电流为400mA,线圈导体L2的负荷电流为200mA,线圈导体L3的负荷电流为150mA,线圈导体L4的负荷电流为100mA。
这样,在构成多个沟道的线圈导体中,使负荷电流最小的沟道的线圈导体L4与开关IC3的Vout端子(Vout4)之间的连接布线34最长,由此对最容易辐射噪声的布线使用负荷电流最小的沟道,从而可将辐射噪声抑制为最小限。
另外,在构成多个沟道的线圈导体中,使负荷电流最大的线圈导体L1与开关IC3的Vout端子(Vout1)之间的连接布线31最短,由此对最不容易辐射噪声的布线使用负荷电流最大的沟,从而可更加抑制辐射噪声。
此外,在本实施方式的多沟道型DC-DC转换器中由于具有4沟道,所以还存在负荷电流200mA的线圈导体L2和负荷电流150mA的线圈导体L3。在本实施方式中,线圈导体L2与开关IC3的Vout端子(Vout2)之间的连接布线32,和线圈导体L3与开关IC3的Vout端子(Vout3)之间的连接布线33的长度几乎相同,但是期望使负荷电流更大的线圈导体L2的连接布线32的长度比连接布线33的长度短。但是,在本发明中,关键是使最容易辐射噪声的连接布线34使用负荷电流最小的沟道,而并非必须对其他的沟道按负荷电流小的顺序使用长布线。
此外,即使在DC-DC转换器具有更多沟道的情况下,也如同本实施方式所示的配置关系那样,通过使负荷电流最小的沟道的线圈导体与开关IC的Vout端子之间的连接布线最长,能够将辐射噪声抑制为最小限。另外,通过使负荷电流最大的线圈导体与开关IC的Vout端子之间的连接布线最短,能够更加抑制辐射噪声。
另外,在本实施方式的多沟道型DC-DC转换器中,主面侧端部21距离Vout端子最近,主面侧端部24距离Vout端子最远,但是,例如假设,将主面侧端部24配置在层叠体2的中央附近时,则该主面侧端部24距离Vout端子最近。在该情况下,只要将最长的连接布线(例如连接布线33)与负荷电流最大的沟道连接既可。另外,在该情况下,连接布线34最短,因此可以用连接布线34连接负荷电流最大的沟道。
附图标记说明:
1…DC-DC转换器;
2…层叠体;
3…开关IC;
11、12、13、14…盘电极;
21、22、23、24…主面侧端部;
31、32、33、34…连接布线。

Claims (2)

1.一种多沟道型DC-DC转换器,其具备:
层叠体,在内部形成有多个线圈导体;
多个盘电极,设置在所述层叠体主面上,并经由连接布线而与所述多个线圈导体电连接;以及
控制IC,与所述多个盘电极连接,且该控制IC具有多个输入端子或者输出端子,
该多沟道型DC-DC转换器的特征在于,
与所述多个线圈导体中负荷电流最小的线圈导体连接的所述连接布线最长。
2.根据权利要求1所述的多沟道型DC-DC转换器,其特征在于,
与所述多个线圈导体中负荷电流最大的线圈导体连接的所述连接布线最短。
CN201280003203.5A 2011-06-10 2012-03-01 多沟道型dc-dc转换器 Active CN103168413B (zh)

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EP2720361A1 (en) 2014-04-16
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