CN103151454B - 存储元件和存储设备 - Google Patents

存储元件和存储设备 Download PDF

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Publication number
CN103151454B
CN103151454B CN201210487182.0A CN201210487182A CN103151454B CN 103151454 B CN103151454 B CN 103151454B CN 201210487182 A CN201210487182 A CN 201210487182A CN 103151454 B CN103151454 B CN 103151454B
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CN
China
Prior art keywords
layer
magnetization
magnetic
memory element
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210487182.0A
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English (en)
Chinese (zh)
Other versions
CN103151454A (zh
Inventor
山根阳
山根一阳
细见政功
大森广之
别所和宏
肥后丰
浅山彻哉
内田裕行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Filing date
Publication date
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Publication of CN103151454A publication Critical patent/CN103151454A/zh
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Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201210487182.0A 2011-12-01 2012-11-26 存储元件和存储设备 Expired - Fee Related CN103151454B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-263289 2011-12-01
JP2011263289A JP5867030B2 (ja) 2011-12-01 2011-12-01 記憶素子、記憶装置

Publications (2)

Publication Number Publication Date
CN103151454A CN103151454A (zh) 2013-06-12
CN103151454B true CN103151454B (zh) 2017-06-16

Family

ID=48523392

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210487182.0A Expired - Fee Related CN103151454B (zh) 2011-12-01 2012-11-26 存储元件和存储设备

Country Status (3)

Country Link
US (1) US8637947B2 (enExample)
JP (1) JP5867030B2 (enExample)
CN (1) CN103151454B (enExample)

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US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US8923038B2 (en) 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
US9466787B2 (en) 2013-07-23 2016-10-11 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
CN106030840B (zh) * 2014-03-25 2019-03-01 英特尔公司 磁畴壁逻辑器件及互连
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
JP6948706B2 (ja) 2015-07-16 2021-10-13 国立大学法人東北大学 磁気抵抗効果素子および磁気メモリ
US9489998B1 (en) * 2015-11-17 2016-11-08 Samsung Electronics Co., Ltd. Magnetic junctions having a magnetoelastic free layer programmable using spin transfer torque
US11563169B2 (en) 2015-11-18 2023-01-24 Tohoku University Magnetic tunnel junction element and magnetic memory
KR102551980B1 (ko) * 2016-03-30 2023-07-05 타호 리서치 리미티드 수직 자기 터널 접합(pmtjs)의 변형 엔지니어링에 대한 접근법 및 결과적 구조체
US10475564B2 (en) 2016-06-29 2019-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation
US11404630B2 (en) 2016-12-30 2022-08-02 Intel Corporation Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same
JP6832818B2 (ja) * 2017-09-21 2021-02-24 キオクシア株式会社 磁気記憶装置
US10734443B2 (en) * 2018-08-27 2020-08-04 Allegro Microsystems, Llc Dual manetoresistance element with two directions of response to external magnetic fields
JP2020035976A (ja) 2018-08-31 2020-03-05 キオクシア株式会社 磁気記憶装置
DE102019202739A1 (de) * 2019-02-28 2020-09-03 Carl Zeiss Meditec Ag Verfahren zur Steuerung eines Halbleiterlaserdioden-basierten SS-Interferometer-Systems
WO2021251003A1 (ja) * 2020-06-10 2021-12-16 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果素子、半導体装置及び電子機器
CN114744107A (zh) * 2022-03-18 2022-07-12 北京航空航天大学 一种利用负热膨胀或巨热膨胀调控磁性层磁态实现信息存储的方法
KR20230137519A (ko) * 2022-03-21 2023-10-05 삼성전자주식회사 자기 터널 접합 구조체 및 이를 포함하는 자기 메모리 장치
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression
US12320870B2 (en) 2022-07-19 2025-06-03 Allegro Microsystems, Llc Controlling out-of-plane anisotropy in an MR sensor with free layer dusting
US12347595B2 (en) 2023-06-13 2025-07-01 Allegro Microsystems, Llc Magnetoresistance element including a skyrmion layer and a vortex layer that are magnetically coupled to each other
CN117945376A (zh) * 2024-01-12 2024-04-30 四川大学 一种负热膨胀材料及其制备方法

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WO2010134378A1 (ja) * 2009-05-19 2010-11-25 富士電機ホールディングス株式会社 磁気メモリ素子およびそれを用いる記憶装置

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CN101743634A (zh) * 2007-07-19 2010-06-16 索尼公司 存储元件及存储器
WO2010134378A1 (ja) * 2009-05-19 2010-11-25 富士電機ホールディングス株式会社 磁気メモリ素子およびそれを用いる記憶装置

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US20130140658A1 (en) 2013-06-06
US8637947B2 (en) 2014-01-28
JP5867030B2 (ja) 2016-02-24
JP2013115401A (ja) 2013-06-10
CN103151454A (zh) 2013-06-12

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