CN103137436B - 改善晶圆局部露光的方法 - Google Patents
改善晶圆局部露光的方法 Download PDFInfo
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CN201110391838.4A CN103137436B (zh) | 2011-11-30 | 2011-11-30 | 改善晶圆局部露光的方法 |
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CN201110391838.4A CN103137436B (zh) | 2011-11-30 | 2011-11-30 | 改善晶圆局部露光的方法 |
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CN103137436A CN103137436A (zh) | 2013-06-05 |
CN103137436B true CN103137436B (zh) | 2016-02-10 |
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CN101882591A (zh) * | 2009-05-05 | 2010-11-10 | 旺宏电子股份有限公司 | 晶片的检测方法 |
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KR20020064453A (ko) * | 2001-02-01 | 2002-08-09 | 삼성전자 주식회사 | 반도체 노광시스템 및 이를 이용한 반도체 노광방법 |
KR20050055909A (ko) * | 2003-12-09 | 2005-06-14 | 삼성전자주식회사 | 노광 설비의 웨이퍼 정렬 방법 |
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CN101882591A (zh) * | 2009-05-05 | 2010-11-10 | 旺宏电子股份有限公司 | 晶片的检测方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140107 |
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Effective date of registration: 20140107 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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