CN103065945B - A kind of bonding method of image sensor wafer - Google Patents
A kind of bonding method of image sensor wafer Download PDFInfo
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- CN103065945B CN103065945B CN201310012320.4A CN201310012320A CN103065945B CN 103065945 B CN103065945 B CN 103065945B CN 201310012320 A CN201310012320 A CN 201310012320A CN 103065945 B CN103065945 B CN 103065945B
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 235000012431 wafers Nutrition 0.000 claims abstract description 75
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 239000000428 dust Substances 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of bonding method of image sensor wafer, comprise the following steps: use high-density plasma chemical vapor deposition device wafers passivation layer oxide; First time cmp is carried out to the device wafers of deposit passivation layer oxide; Device wafers is carried out plasma enhanced CVD method deposit passivation layer oxide again on original oxide; Second time cmp is carried out to device wafers; Device wafers after second time cmp is carried out annealing in process; By process after device wafers with carry out the slide glass bonding after plasma enhanced CVD oxide process and cmp.Beneficial effect is: after original first time cmp, add plasma enhanced CVD and second time cmp, more effectively achieve the flatness of crystal column surface, issuable empty problem after solving bonding.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of bonding method of image sensor wafer.
Background technology
Wafer bond techniques refers to the method for two wafer being combined closely by chemistry and physical action, and wafer bonding is often processed with surface silicon and combined, and is used in the processing technology of MEMS (micro electro mechanical system).Although wafer bonding is not the direct approach of micromachined; but consequence is processed with at microcomputer; by combining with other manufacturing process, can provide support micro-structural and protect, the electricity that can realize between mechanical structure or between mechanical structure with circuit be connected again.The quality of wafer bonding quality can have a direct impact the performance of micro mechanical system.
The flatness para-linkage (bonding) of backside illuminated image transducer bonding oxide is most important, if crystal column surface is uneven, then can cause the empty problem after bonding.In existing technology, device wafers is carried out high-density plasma chemical vapor deposition passivation layer oxidation phenology, again cmp is carried out to device wafers oxide skin(coating), then annealing in process is carried out to device wafers, get a slide glass again and carry out plasma-reinforced chemical vapor deposition oxide, afterwards cmp is carried out to the oxide skin(coating) of slide glass, treated device wafers and slide glass are carried out bonding.In this process, through being oxidized (thickness is generally 16000 dust-24000 dusts) at high-density plasma chemical vapor deposition, the out-of-flatness more on surface can be caused, difficulty will be caused to cmp like this, not easily realize the planarization of the overall situation.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of bonding method that effectively can realize the image sensor wafer of the planarization of the crystal column surface overall situation.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of bonding method of image sensor wafer, comprises the following steps:
High-density plasma chemical vapor deposition method is used (to utilize radio frequency source or microwave-excitation mist to carry out chemical reaction, highdensity plasma is directly made to arrive silicon chip surface, prepare the oxidation film can filling high-aspect-ratio gap) device wafers is processed, deposit device wafers passivation layer oxide; First time cmp (carrying out planarization silicon chip surface by the relative motion between silicon chip and a rubbing head) is carried out to the device wafers of deposit passivation layer oxide; Device wafers after grinding is carried out plasma enhanced CVD method (use the energy of plasma to produce and the chemical reaction maintaining mist fixes oxidation film at silicon chip surface deposit one deck) process, deposit passivation layer oxide again on the original oxide of device wafers; Second time cmp is carried out to device wafers; Device wafers after second time cmp is carried out annealing in process (by device wafers in inert gas filled chamber from room temperature to uniform temperature, keep at this temperature chamber indoor temperature being down to room temperature after a period of time); By the device wafers after above-mentioned steps process with carry out the process of plasma enhanced CVD method and cmp after slide glass bonding (by chemistry and physical action two wafer precisions are combined).
On the basis of technique scheme, the present invention can also do following improvement.
Further, described utilization high-density plasma chemical vapor deposition method processes device wafers, and deposit device wafers passivation layer oxide thickness is 8000 dust to 12000 dusts.
Further, the described device wafers to deposit passivation layer oxide is carried out first time cmp and oxide thickness is ground to 4000 dust to 6000 dusts.
Further, described by grinding after device wafers carry out the process of plasma enhanced CVD method, on the original oxide of device wafers, the thickness of deposit passivation layer oxide is 8000 dust to 12000 dusts again.
Further, describedly second time cmp is carried out to device wafers device wafers is ground to 8000 dust to 12000 dusts.
The invention has the beneficial effects as follows: after original first time cmp, add plasma enhanced CVD and second time cmp, more effectively achieve the flatness of crystal column surface, issuable empty problem after solving bonding.
Accompanying drawing explanation
Fig. 1 is existing image sensor wafer bonding technology flow chart;
Fig. 2 is image sensor wafer bonding technology flow chart of the present invention.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As the process chart that Fig. 1 is existing image sensor wafer bonding, have in figure known, the step of image sensor wafer bonding in prior art, first, through step s101, after device wafers high-density plasma chemical vapor deposition passivating oxide, the oxide layer of step s102 to the device wafers through step s101 is ground, then through step s103, handling return is carried out to device wafers, step s104 is to slide glass plasma enhanced CVD oxide, slide glass through step s104 is carried out step s105 cmp is carried out to oxide on slide glass, finally, bonding will be carried out through process and device wafers and slide glass.
Fig. 2 is image sensor wafer bonding technology flow chart of the present invention, by knowing in figure that process chart of the present invention is: step s201, carries out high-density plasma chemical vapor deposition passivating oxide to device wafers; Step s202, carries out first time cmp to the oxide in device wafers; Step s203, carries out plasma enhanced CVD passivating oxide to device wafers; Step s204, carries out second time cmp to the oxide of device wafers; Step s205, carries out annealing in process to device wafers; Step s206, carries out plasma enhanced CVD oxide by a slide glass; Step s207, carries out cmp to the oxide on sheet; Step s208, carries out bonding by the slide glass of the device wafers and step s207 of carrying out step s205.Bonding technology flow process of the present invention is compared with existing bonding technology flow process, in existing technological process first time cmp is carried out to device wafers after many to device wafers plasma enhanced chemical machinery vapor deposition passivating oxide with carry out second time cmp to device wafers, by adding this two steps, the cmp improved dramatically owing to causing oxide surface out-of-flatness to cause after high-density plasma chemical vapor deposition oxide is difficult to the problem realizing oxide surface planarization.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. a bonding method for image sensor wafer, is characterized in that, comprises the following steps:
High-density plasma chemical vapor deposition method is used to process device wafers, deposit device wafers passivation layer oxide; First time cmp is carried out to the device wafers of deposit passivation layer oxide; Device wafers after grinding is carried out the process of plasma enhanced CVD method, deposit passivation layer oxide again on the original oxide of device wafers; Second time cmp is carried out to device wafers; Device wafers after second time cmp is carried out annealing in process; By the device wafers after above-mentioned steps process with carry out the slide glass bonding after the process of plasma enhanced CVD method and cmp.
2. the bonding method of a kind of image sensor wafer according to claim 1, it is characterized in that: when described utilization high-density plasma chemical vapor deposition method processes device wafers, deposit device wafers passivation layer oxide thickness is 8000 dust to 12000 dusts.
3. the bonding method of a kind of image sensor wafer according to claim 1 and 2, is characterized in that: the described device wafers to deposit passivation layer oxide is carried out first time cmp oxide thickness and is ground to 4000 dust to 6000 dusts.
4. the bonding method of a kind of image sensor wafer according to claim 3, it is characterized in that: described by grinding after device wafers carry out the process of plasma enhanced CVD method time, on the original oxide of device wafers, the thickness of deposit passivation layer oxide is 8000 dust to 12000 dusts again.
5. the bonding method of a kind of image sensor wafer according to claim 4, is characterized in that: describedly carry out second time cmp to device wafers device wafers is ground to 8000 dust to 12000 dusts.
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| CN201310012320.4A CN103065945B (en) | 2013-01-14 | 2013-01-14 | A kind of bonding method of image sensor wafer |
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| CN201310012320.4A CN103065945B (en) | 2013-01-14 | 2013-01-14 | A kind of bonding method of image sensor wafer |
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| CN103065945B true CN103065945B (en) | 2015-12-23 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104916535B (en) * | 2014-03-13 | 2018-02-06 | 中芯国际集成电路制造(上海)有限公司 | A kind of method of induced with laser thermally grown oxide silicon |
| CN108461512A (en) * | 2018-02-02 | 2018-08-28 | 豪威科技(上海)有限公司 | wafer bonding structure and wafer bonding method |
| CN110164894A (en) * | 2019-05-28 | 2019-08-23 | 上海华力微电子有限公司 | A kind of bonding method |
| CN110148603B (en) * | 2019-05-28 | 2021-05-07 | 上海华力微电子有限公司 | Method for manufacturing back-illuminated CMOS optical sensor |
| CN110718453B (en) * | 2019-11-15 | 2021-08-20 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1157483A (en) * | 1996-02-14 | 1997-08-20 | 台湾茂矽电子股份有限公司 | Method for making dielectric layer of integrated circuit |
| CN101577244A (en) * | 2008-05-05 | 2009-11-11 | 中芯国际集成电路制造(北京)有限公司 | Flattening method of interlayer medium layer and forming method of contact hole |
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| CN102623304B (en) * | 2011-01-30 | 2015-03-25 | 陈柏颖 | Wafer suitable for nanometer technology and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1157483A (en) * | 1996-02-14 | 1997-08-20 | 台湾茂矽电子股份有限公司 | Method for making dielectric layer of integrated circuit |
| CN101577244A (en) * | 2008-05-05 | 2009-11-11 | 中芯国际集成电路制造(北京)有限公司 | Flattening method of interlayer medium layer and forming method of contact hole |
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