CN103065945A - Image sensor wafer bonding method - Google Patents
Image sensor wafer bonding method Download PDFInfo
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- CN103065945A CN103065945A CN2013100123204A CN201310012320A CN103065945A CN 103065945 A CN103065945 A CN 103065945A CN 2013100123204 A CN2013100123204 A CN 2013100123204A CN 201310012320 A CN201310012320 A CN 201310012320A CN 103065945 A CN103065945 A CN 103065945A
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 68
- 239000011521 glass Substances 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 239000000428 dust Substances 0.000 claims description 9
- 238000000227 grinding Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 abstract description 8
- 238000007740 vapor deposition Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Abstract
The invention relates to the field of semiconductor manufacturing, in particular to an image sensor wafer bonding method. The image sensor wafer bonding method includes a first step of utilizing the high-density plasma chemistry vapor deposition technique to deposit passivation layer oxide on a device wafer, a second step of carrying out a first chemical mechanical lapping to the device wafer with the deposited passivation layer oxide, a third step of depositing the passivation layer oxide again on the original oxide of the device wafer through adoption of the plasma chemistry vapor deposition technique, a fourth step of carrying out a second chemical mechanical lapping to the device wafer, a fifth step of carrying out annealing treatment to the device wafer after the second chemical mechanical lapping, and a sixth step of bonding the treated device wafer and a ground slide which is subjected to the plasma enhanced chemistry vapor deposition oxide treatment and the chemical mechanical lapping. The image sensor wafer bonding method has the advantages that the plasma enhanced chemistry vapor deposition and the second chemical mechanical lapping are added to the device wafer after the original first chemical mechanical lapping, and consequently the plainness of the surface of the wafer is more effectively achieved, and the problem that holes are likely to generate after bonding is solved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of bonding method of image sensor wafer.
Background technology
Wafer bond techniques refers to that by chemistry and physical action method that two wafer are combined closely wafer bonding is often processed with surface silicon and combined, and is used in the processing technology of MEMS (micro electro mechanical system).Although wafer bonding is not the direct approach of micromachined; but be processed with consequence at microcomputer; by combining with other manufacturing process, can provide support and protect micro-structural, can realize again between the mechanical structure or mechanical structure is connected with electricity between the circuit.The quality of wafer bonding quality can have a direct impact the performance of micro mechanical system.
The flatness para-linkage (bonding) of backside illuminated image transducer bonding oxide is most important, if crystal column surface is uneven, then can cause the empty problem behind the bonding.In the existing technology, device wafers is carried out high-density plasma chemical vapor deposition passivation layer oxidation phenology, again the device wafers oxide skin(coating) is carried out cmp, then device wafers is carried out annealing in process, get again a slide glass and carry out the plasma-reinforced chemical vapor deposition oxide, afterwards the oxide skin(coating) of slide glass carried out cmp, treated device wafers and slide glass are carried out bonding.In this process, through high-density plasma chemical vapor deposition oxidation (thickness is generally 16000 dusts-24000 dust), can cause the more out-of-flatness on surface, will cause difficulty to cmp like this, be difficult for realizing the planarization of the overall situation.
Summary of the invention
Technical problem to be solved by this invention provides a kind of bonding method of image sensor wafer of the planarization that can effectively realize the crystal column surface overall situation.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of bonding method of image sensor wafer may further comprise the steps:
Use the high-density plasma chemical vapor deposition method (to utilize radio frequency source or microwave-excitation mist to carry out chemical reaction, directly make highdensity plasma arrive silicon chip surface, prepare the oxidation film that can fill the high-aspect-ratio gap) device wafers is processed deposit device wafers passivation layer oxide; The device wafers of deposit passivation layer oxide is carried out cmp for the first time (coming the planarization silicon chip surface by the relative motion between silicon chip and the rubbing head); Device wafers after grinding is carried out plasma enhanced CVD method (chemical reaction that produces and keep mist with the energy of plasma silicon chip surface deposit one deck fixedly oxidation film) processing, deposit passivation layer oxide again on the original oxide of device wafers; Device wafers is carried out the cmp second time; With the device wafers behind the second time cmp carry out annealing in process (device wafers is warming up to uniform temperature from room temperature in inert gas filled chamber, under this temperature, keep after a period of time chamber in temperature be down to room temperature); Device wafers after above-mentioned steps processed with carry out that the plasma enhanced CVD method is processed and cmp after slide glass bonding (two wafer precisions being combined by chemical and physical action).
On the basis of technique scheme, the present invention can also do following improvement.
Further, described utilization high-density plasma chemical vapor deposition method is processed device wafers, and deposit device wafers passivation layer oxide thickness is 8000 dust to 12000 dusts.
Further, described device wafers to deposit passivation layer oxide is carried out the first time cmp oxide thickness is ground to 4000 dust to 6000 dusts.
Further, the device wafers after described will the grinding is carried out the processing of plasma enhanced CVD method, and the thickness of deposit passivation layer oxide is 8000 dust to 12000 dusts again on the original oxide of device wafers.
Further, describedly device wafers is carried out the second time cmp device wafers is ground to 8000 dust to 12000 dusts.
The invention has the beneficial effects as follows: add plasma enhanced CVD and the cmp second time behind the cmp in original first time, more effectively realize the flatness of crystal column surface, solved issuable empty problem behind the bonding.
Description of drawings
Fig. 1 is existing image sensor wafer bonding process chart;
Fig. 2 is image sensor wafer bonding process chart of the present invention.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used for explaining the present invention, is not be used to limiting scope of the present invention.
Such as the process chart of Fig. 1 for existing image sensor wafer bonding, have among the figure as can be known, the step of image sensor wafer bonding in the prior art, at first, through step s101, behind device wafers high-density plasma chemical vapor deposition passivating oxide, step s102 grinds the oxide layer of the device wafers of process step s101, then through step s103 device wafers is carried out handling return, step s104 is to slide glass plasma enhanced CVD oxide, to carry out step s105 through the slide glass of step s104 oxide on the slide glass will be carried out cmp, last, will carry out bonding through processing and device wafers and slide glass.
Fig. 2 is image sensor wafer bonding process chart of the present invention, by knowing among the figure that process chart of the present invention is: and step s201, carry out the high-density plasma chemical vapor deposition passivating oxide to device wafers; Step s202 carries out the cmp first time to the oxide on the device wafers; Step s203 carries out the plasma enhanced CVD passivating oxide to device wafers; Step s204 carries out the cmp second time to the oxide of device wafers; Step s205 carries out annealing in process to device wafers; Step s206 carries out the plasma enhanced CVD oxide with a slide glass; Step s207 carries out cmp to the oxide on sheet; Step s208 will carry out the device wafers of step s205 and the slide glass of step s207 and carry out bonding.Bonding technology flow process of the present invention is compared with existing bonding technology flow process, in existing technological process, device wafers is carried out manyly behind the cmp first time carrying out the cmp second time to device wafers plasma enhanced chemical machinery vapor deposition passivating oxide with to device wafers, by adding this two steps, improved dramatically because the cmp that causes the oxide surface out-of-flatness to cause behind the high-density plasma chemical vapor deposition oxide is difficult to realize the problem of oxide surface planarization.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. the bonding method of an image sensor wafer is characterized in that, may further comprise the steps:
Use the high-density plasma chemical vapor deposition method device wafers to be processed deposit device wafers passivation layer oxide; Device wafers to deposit passivation layer oxide is carried out the cmp first time; Device wafers after grinding is carried out the plasma enhanced CVD method process, deposit passivation layer oxide again on the original oxide of device wafers; Device wafers is carried out the cmp second time; Device wafers behind the second time cmp is carried out annealing in process; With the device wafers after above-mentioned steps is processed with carry out that the plasma enhanced CVD method is processed and cmp after the slide glass bonding.
2. a kind of bonding method that affects the transducer wafer according to claim 1, it is characterized in that: when described utilization high-density plasma chemical vapor deposition method was processed device wafers, deposit device wafers passivation layer oxide thickness was 8000 dust to 12000 dusts.
3. a kind of bonding method that affects the transducer wafer according to claim 1 and 2 is characterized in that: described device wafers to deposit passivation layer oxide is carried out first time cmp oxide thickness and is ground to 4000 dust to 6000 dusts.
4. a kind of bonding method that affects the transducer wafer according to claim 3, it is characterized in that: when the device wafers after described will the grinding was carried out the processing of plasma enhanced CVD method, the thickness of deposit passivation layer oxide was 8000 dust to 12000 dusts again on the original oxide of device wafers.
5. a kind of bonding method that affects the transducer wafer according to claim 4 is characterized in that: describedly device wafers is carried out the second time cmp device wafers is ground to 8000 dust to 12000 dusts.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310012320.4A CN103065945B (en) | 2013-01-14 | 2013-01-14 | A kind of bonding method of image sensor wafer |
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| CN201310012320.4A CN103065945B (en) | 2013-01-14 | 2013-01-14 | A kind of bonding method of image sensor wafer |
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| CN103065945B CN103065945B (en) | 2015-12-23 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916535A (en) * | 2014-03-13 | 2015-09-16 | 中芯国际集成电路制造(上海)有限公司 | Laser-induced silicon oxide thermal growth method |
| CN108461512A (en) * | 2018-02-02 | 2018-08-28 | 豪威科技(上海)有限公司 | wafer bonding structure and wafer bonding method |
| CN110148603A (en) * | 2019-05-28 | 2019-08-20 | 上海华力微电子有限公司 | The manufacturing method of back-illuminated type CMOS optical sensor |
| CN110164894A (en) * | 2019-05-28 | 2019-08-23 | 上海华力微电子有限公司 | A kind of bonding method |
| CN110718453A (en) * | 2019-11-15 | 2020-01-21 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
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| CN1157483A (en) * | 1996-02-14 | 1997-08-20 | 台湾茂矽电子股份有限公司 | Method for making dielectric layer of integrated circuit |
| CN101577244A (en) * | 2008-05-05 | 2009-11-11 | 中芯国际集成电路制造(北京)有限公司 | Flattening method of interlayer medium layer and forming method of contact hole |
| CN102623304A (en) * | 2011-01-30 | 2012-08-01 | 陈柏颖 | Wafer suitable for nanometer technology and method for manufacturing the same |
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2013
- 2013-01-14 CN CN201310012320.4A patent/CN103065945B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1157483A (en) * | 1996-02-14 | 1997-08-20 | 台湾茂矽电子股份有限公司 | Method for making dielectric layer of integrated circuit |
| CN101577244A (en) * | 2008-05-05 | 2009-11-11 | 中芯国际集成电路制造(北京)有限公司 | Flattening method of interlayer medium layer and forming method of contact hole |
| CN102623304A (en) * | 2011-01-30 | 2012-08-01 | 陈柏颖 | Wafer suitable for nanometer technology and method for manufacturing the same |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916535A (en) * | 2014-03-13 | 2015-09-16 | 中芯国际集成电路制造(上海)有限公司 | Laser-induced silicon oxide thermal growth method |
| CN104916535B (en) * | 2014-03-13 | 2018-02-06 | 中芯国际集成电路制造(上海)有限公司 | A kind of method of induced with laser thermally grown oxide silicon |
| CN108461512A (en) * | 2018-02-02 | 2018-08-28 | 豪威科技(上海)有限公司 | wafer bonding structure and wafer bonding method |
| CN110148603A (en) * | 2019-05-28 | 2019-08-20 | 上海华力微电子有限公司 | The manufacturing method of back-illuminated type CMOS optical sensor |
| CN110164894A (en) * | 2019-05-28 | 2019-08-23 | 上海华力微电子有限公司 | A kind of bonding method |
| CN110148603B (en) * | 2019-05-28 | 2021-05-07 | 上海华力微电子有限公司 | Method for manufacturing back-illuminated CMOS optical sensor |
| CN110718453A (en) * | 2019-11-15 | 2020-01-21 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
| CN110718453B (en) * | 2019-11-15 | 2021-08-20 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
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