CN108461512A - wafer bonding structure and wafer bonding method - Google Patents
wafer bonding structure and wafer bonding method Download PDFInfo
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- CN108461512A CN108461512A CN201810108058.6A CN201810108058A CN108461512A CN 108461512 A CN108461512 A CN 108461512A CN 201810108058 A CN201810108058 A CN 201810108058A CN 108461512 A CN108461512 A CN 108461512A
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000011248 coating agent Substances 0.000 claims abstract description 160
- 238000000576 coating method Methods 0.000 claims abstract description 160
- 235000012431 wafers Nutrition 0.000 claims abstract description 142
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 239000000376 reactant Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 206010068052 Mosaicism Diseases 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 210000003765 sex chromosome Anatomy 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Abstract
The present invention provides a kind of wafer bonding structure and wafer bonding methods, after forming the first oxide skin(coating), also form the second oxide skin(coating), the consistency of consistency first oxide skin(coating) of second oxide skin(coating) is high, so that the second oxide skin(coating) first oxide skin(coating) has higher adhesiveness, to by second oxide skin(coating) by device wafers and load wafer bonding together when can improve device wafers and load wafer between bonding force, improve and be formed by wafer bonding reliability of structure.
Description
Technical field
The present invention relates to ic manufacturing technology field, more particularly to a kind of wafer bonding structure and wafer bonding side
Method.
Background technology
In recent years with increasing, the physics of sensor single pixel of imaging sensor (CIS) chip pixel value
Size is smaller and smaller, also becomes increasingly complex for the integrated circuit fabrication process of Sensor section in chip in this way, so that should
Part has been difficult to be manufactured in the technique with along with signal processing module.Additionally due to the photosensitive region of single pixel
Smaller and smaller, image fault in order to prevent, to the amount of incident photon, there has also been stringenter limitations.
Wafer-level packaging before is to do interconnection line from the back of wafer, and photon penetrates metal interconnection from the front of wafer
Layer enters photosensitive regions of pixels, and complicated metal interconnection layer often blocks a part of photon, the light for causing photosensitive region to obtain
Subnumber mesh cannot meet the requirement of imaging.Described above in order to solve the problems, such as, current encapsulation is all gradually intended to using the back of the body
Illuminated technique (BSI), will the original circuit part between camera lens and light receiving semiconductor be transferred to around light receiving semiconductor or
Below so that light can directly enter photosensitive region, it is therefore prevented that blocking of the interconnection circuit to light greatly improves single pixel
Utilization ratio of the unit to light.
Back-illuminated type wafer-level packaging needs wafer back part to be ground to 5 μm or so, so that light is excited through silicon photosensitive
Region, and 5 μm of wafer support ability is limited, needs to use load wafer in the front of wafer.General technology is exactly to use at present
Load wafer does support and is thinned to do the back of device wafers, and the wafer rear after being thinned does the work of lenticule and optical filtering
Skill, then with capping protect the face, continue be thinned load wafer, load wafer on be TSV (through silicon via,
Silicon through hole) technique and RDL (redistribution layer reroute layer) technique, weld pad (pad) is drawn, finally crystalline substance
Circle cuts into single chip.
Load wafer is usually bonded together for the support of device wafers by that will load wafer with device wafers.It is existing
In technology, the bonding force loaded between wafer and device wafers is not strong, reliable to be easy to occur in the subsequent process sliver etc.
Sex chromosome mosaicism.
Invention content
The purpose of the present invention is to provide a kind of wafer bonding structure and wafer bonding methods, to solve/slow down existing skill
The not strong problem of bonding force between wafer and device wafers is loaded in art.
In order to solve the above technical problems, the present invention provides a kind of wafer bonding method, the wafer bonding method includes：
One first oxide skin(coating) is formed in a device wafers；
One second oxide skin(coating) is formed in the device wafers, second oxide skin(coating) covers first oxide
The consistency of layer, consistency first oxide skin(coating) of second oxide skin(coating) is high；
By second oxide skin(coating) and a load wafer bonding in the device wafers.
Optionally, in the wafer bonding method, the material of first oxide skin(coating) and second oxide skin(coating)
Matter is identical.
Optionally, in the wafer bonding method, the material of first oxide skin(coating) and second oxide skin(coating)
Matter is selected from silica.
Optionally, in the wafer bonding method, first silicon oxide layer and second oxide skin(coating) use
Reactant include ethyl orthosilicate and oxygen.
Optionally, in the wafer bonding method, first oxide skin(coating) and second oxide skin(coating) are logical
Plasma enhanced chemical vapor deposition technique is crossed to be formed.
Optionally, in the wafer bonding method, high frequency power is used by forming second oxide skin(coating)
60%~70% of high frequency power used by first oxide skin(coating) is formed, used by forming second oxide skin(coating)
Low frequency power is 75%~85% of low frequency power used by forming first oxide skin(coating).
Optionally, it in the wafer bonding method, forms temperature used by second oxide skin(coating) and is formed
Temperature difference used by first oxide skin(coating) is less than or equal to 5 DEG C, forms pressure used by second oxide skin(coating)
And the difference for forming pressure used by first oxide skin(coating) is less than or equal to 1Torr.
Optionally, in the wafer bonding method, the thickness of first oxide skin(coating) between 1 μm~5 μm,
The thickness of second oxide skin(coating) is between 100 angstroms~1000 angstroms.
Optionally, in the wafer bonding method, after forming first oxide skin(coating), described second is formed
Before oxide skin(coating), the wafer bonding returning method：Flatening process is executed to first oxide skin(coating).
The present invention also provides a kind of wafer bonding structure, the wafer bonding structure includes：
One device wafers；
One first oxide skin(coating), first oxide skin(coating) are formed in the device wafers；
One second oxide skin(coating), second oxide skin(coating) are formed in the device wafers, second oxide skin(coating)
First oxide skin(coating) is covered, the consistency of consistency first oxide skin(coating) of second oxide skin(coating) is high；
One load wafer, the load wafer are bonded together with second oxide skin(coating) in the device wafers.
In wafer bonding structure provided by the invention and wafer bonding method, after forming the first oxide skin(coating), also
The second oxide skin(coating) is formed, the consistency of consistency first oxide skin(coating) of second oxide skin(coating) is high, thus makes
Obtaining the second oxide skin(coating) first oxide skin(coating) has higher adhesiveness, to pass through second oxide skin(coating)
Device wafers can be improved when by device wafers and load wafer bonding together and load the bonding force between wafer, improved
It is formed by wafer bonding reliability of structure.
Description of the drawings
Fig. 1 to Fig. 2 is the diagrammatic cross-section that a kind of wafer bonding method is formed by structure；
Fig. 3 to Fig. 6 is formed by the diagrammatic cross-section of structure to the wafer bonding method of the embodiment of the present invention；
Wherein,
100- device wafers；110- oxide skin(coating)s；120- loads wafer；
200- device wafers；The first oxide skin(coating)s of 210-；The second oxide skin(coating)s of 220-；230- loads wafer.
Specific implementation mode
Below in conjunction with the drawings and specific embodiments to wafer bonding structure proposed by the present invention and wafer bonding method make into
One step is described in detail.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that
Attached drawing is all made of very simplified form and uses non-accurate ratio, only to convenient, lucidly aid illustration is of the invention
The purpose of embodiment.
First, it please refers to Fig.1 to Fig. 2, the diagrammatic cross-section of structure is formed by for a kind of wafer bonding method.Such as figure
Shown in 1 and Fig. 2, a kind of wafer bonding method specifically comprises the following steps：Monoxide layer 110 is formed in a device wafers 100
On；Then, the oxide skin(coating) 110 in the device wafers 100 is bonded with a load wafer 120.Wherein, the oxidation
Nitride layer 110 is formed by plasma enhanced chemical vapor deposition technique, forms high frequency work(used by the oxide skin(coating) 110
Rate is between 600W~900W, and low frequency power is between 100W~400W used by forming the oxide skin(coating) 110.It is real
It tests detection and finds that the bonding force of the resulting wafer bonding structure is between 0.8J/m2~1.1J/m2Between.
Above-mentioned (size) adhesion strength can not meet the requirement of subsequent technique well, and still will appear sliver etc. can
By sex chromosome mosaicism.On this basis, inventor has made further research, it is proposed that a kind of following wafer bonding method specifically includes：
One first oxide skin(coating) is formed in a device wafers；
One second oxide skin(coating) is formed in the device wafers, second oxide skin(coating) covers first oxide
The consistency of layer, consistency first oxide skin(coating) of second oxide skin(coating) is high；
By second oxide skin(coating) and a load wafer bonding in the device wafers.
In above-mentioned wafer bonding method, after forming the first oxide skin(coating), the second oxide skin(coating) is also formed, described
The consistency of consistency first oxide skin(coating) of dioxide layer is high, so that second oxide skin(coating) is relatively described
First oxide skin(coating) has higher adhesiveness, to by device wafers and load wafer bonding by second oxide skin(coating)
Device wafers can be improved when together and load the bonding force between wafer, improve be formed by wafer bonding structure can
By property.
Specifically, please referring to Fig.3 to Fig. 6, cuing open for structure is formed by for the wafer bonding method of the embodiment of the present invention
Face schematic diagram.
First, as shown in figure 3, one device wafers 200 of offer in the embodiment of the present application can in the device wafers 200
To be formed with the pel array for including multiple pixel unit (not shown)s.Wherein, the pel array may include in more
Multiple pixel units of row multiple row arrangement, the pixel unit may include light-sensitive element, such as photodiode, phototriode
Pipe etc..Further, multiple transmission gate (not shown)s, the transmission gate can also be formed in the device wafers 200
It is electrically connected with the pixel unit.
With continued reference to Fig. 3, in the embodiment of the present application, then, one first oxide skin(coating) 210 is formed in the device wafers
On 200.Wherein, the material of first oxide skin(coating) 210 is preferably silica, and the main material of device wafers 200 is usually
Silicon, the first oxide skin(coating) 210 selected from oxidation silicon material can be good at bonding with device wafers 200.
Preferably, first oxide skin(coating) 210 passes through plasma enhanced chemical vapor deposition technique (PECVD) shape
At.Specifically, high frequency power used by forming first oxide skin(coating) 210 is between 600W~900W, for example, being formed
High frequency power used by first oxide skin(coating) 210 is 600W, 650W, 700W, 750W, 800W, 850W or 900W etc..
Low frequency power used by forming first oxide skin(coating) 210 is between 100W~400W, for example, forming first oxygen
Low frequency power used by compound layer 210 is 100W, 150W, 200W, 250W, 300W, 350W or 400W etc..Further,
Forming technological temperature used by first oxide skin(coating) 210 can be between 400 DEG C~700 DEG C, for example, described in being formed
Technological temperature used by first oxide skin(coating) 210 be 400 DEG C, 450 DEG C, 500 DEG C, 550 DEG C, 600 DEG C, 620 DEG C, 680 DEG C or
700 DEG C of person etc..Further, formed pressure used by first oxide skin(coating) 210 can between 3Torr~7Torr it
Between, for example, formed pressure used by first oxide skin(coating) 210 be 3Torr, 3.5Torr, 4.2Torr, 4.6Torr,
5Torr, 5.5Torr, 6Torr, 6.5Torr or 7Torr etc..
Wherein, reactant used by first oxide skin(coating) 210 may include ethyl orthosilicate (TEOS) and oxygen
(O2).Wherein, the amount for the ethyl orthosilicate for being passed through reaction chamber can be higher than by being passed through the amount of the oxygen of reaction chamber.For example, logical
The ratio for entering the amount of the oxygen of reaction chamber and being passed through the amount of the ethyl orthosilicate of reaction chamber can be between 3：1 to 20：1 it
Between.Preferably, the thickness of first oxide skin(coating) 210 is between 1 μm~5 μm, for example, first oxide skin(coating) 210
Thickness be 1 μm, 1.5 μm, 2 μm, 3 μm, 3.5 μm, 4 μm, 4.7 μm or 5 μm etc..
Next referring to Fig. 4, in the embodiment of the present application, after forming first oxide skin(coating) 210, then to institute
It states the first oxide skin(coating) 210 and executes flatening process, to improve the flatness on 210 surface of the first oxide skin(coating).Specifically,
Chemical mechanical milling tech (CMP) can be used, flatening process is executed to first oxide skin(coating) 210.In view of to described
After monoxide layer 210 executes flatening process, the thickness of first oxide skin(coating) 210 can be thinned, therefore, passing through
When gas ions enhancing chemical vapor deposition method forms first oxide skin(coating) 210, it can also be carried on the basis of target thickness
Height is formed by the thickness of first oxide skin(coating) 210.
Next referring to Fig. 5, one second oxide skin(coating) 220 is formed in the device wafers 200, second oxide
220 covering first oxide skin(coating) 210 of layer, the consistency of second oxide skin(coating) 220, first oxide skin(coating) 210
Consistency it is high.Preferably, second oxide skin(coating) 220 is identical with the material of first oxide skin(coating) 210, it is possible thereby to
Improve the bonding force between second oxide skin(coating) 220 and first oxide skin(coating) 210.In the embodiment of the present application, institute
The material for stating the second oxide skin(coating) 220 is selected from silica.
Preferably, second oxide skin(coating) 220 is formed by plasma enhanced chemical vapor deposition technique.It is preferred that
, it is high used by forming first oxide skin(coating) 210 to form high frequency power used by second oxide skin(coating) 220
The 60%~70% of frequency power, it is to form first oxidation to form low frequency power used by second oxide skin(coating) 220
The 75%~85% of low frequency power used by nitride layer 210.In the embodiment of the present application, by for forming second oxidation
The high frequency power of nitride layer 220 and the change of low frequency power improve and are formed by 220 adhesiveness of the second oxide skin(coating).
Further, it forms temperature used by second oxide skin(coating) 220 and forms first oxide skin(coating) 210
Used temperature difference is less than or equal to 5 DEG C, forms pressure used by second oxide skin(coating) 220 and forms described first
The difference of pressure used by oxide skin(coating) 210 is less than or equal to 1Torr.It is used preferably, forming second oxide skin(coating) 220
Temperature with form first oxide skin(coating) 210 used by temperature it is identical, form second oxide skin(coating) 220 and used
Pressure with form first oxide skin(coating) 210 used by pressure it is identical, that is, form second oxide skin(coating) 220 and adopted
Temperature and pressure is remained unchanged with temperature and pressure used by formation first oxide skin(coating) 210, thus can also
Simplify technology controlling and process.
Specifically, reactant used by second oxide skin(coating) 220 may include ethyl orthosilicate (TEOS) and oxygen
Gas (O2).Wherein, the amount for the ethyl orthosilicate for being passed through reaction chamber can be higher than by being passed through the amount of the oxygen of reaction chamber.For example,
The ratio for being passed through the amount of the oxygen of reaction chamber and being passed through the amount of the ethyl orthosilicate of reaction chamber can be between 3：1 to 20：1 it
Between.Preferably, the thickness of second oxide skin(coating) 220 is between 100 angstroms~1000 angstroms, for example, second oxide
The thickness of layer 220 is 100 angstroms, 200 angstroms, 350 angstroms, 500 angstroms, 600 angstroms, 750 angstroms, 900 angstroms or 1000 angstroms etc..
Then, as shown in fig. 6, second oxide skin(coating) 220 and one in the device wafers 200 is loaded wafer
230 bondings.Wherein, conventional thermal bonding etc. may be used in the bonding between the device wafers 200 and the load wafer 230
Bonding technology is formed.
Correspondingly, the present embodiment also provides a kind of wafer bonding structure, and shown in Fig. 6, the wafer bonding knot
Structure includes：One device wafers 200；One first oxide skin(coating) 210, first oxide skin(coating) 210 are formed in the device wafers
On 200；One second oxide skin(coating) 220, second oxide skin(coating) 220 are formed in the device wafers 200, second oxygen
Compound layer 220 covers first oxide skin(coating) 210, consistency first oxide of second oxide skin(coating) 220
The consistency of layer 210 is high；One load wafer 230, the load wafer 230 and second oxygen in the device wafers 200
Compound layer 220 is bonded together.
Experiment detection finds that the bonding force of the resulting wafer bonding structure is between 2.4J/m2~2.6J/m2Between,
The bonding force for being formed by wafer bonding structure is greatly improved, the requirement of subsequent technique is met, improves and be formed by
Wafer bonding reliability of structure.
To sum up, in wafer bonding structure provided in an embodiment of the present invention and wafer bonding method, first is being formed
After oxide skin(coating), the second oxide skin(coating) is also formed, consistency first oxide skin(coating) of second oxide skin(coating)
Consistency is high, so that second oxide skin(coating), first oxide skin(coating) has higher adhesiveness, to pass through
Second oxide skin(coating) by device wafers with load wafer bonding together with when can improve device wafers and load wafer it
Between bonding force, improve and be formed by wafer bonding reliability of structure.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (10)
1. a kind of wafer bonding method, which is characterized in that the wafer bonding method includes：
One first oxide skin(coating) is formed in a device wafers；
One second oxide skin(coating) is formed in the device wafers, second oxide skin(coating) covers first oxide skin(coating),
The consistency of consistency first oxide skin(coating) of second oxide skin(coating) is high；
By second oxide skin(coating) and a load wafer bonding in the device wafers.
2. wafer bonding method as described in claim 1, which is characterized in that first oxide skin(coating) and second oxidation
The material of nitride layer is identical.
3. wafer bonding method as claimed in claim 2, which is characterized in that first oxide skin(coating) and second oxidation
The material of nitride layer is selected from silica.
4. wafer bonding method as claimed in claim 2, which is characterized in that first silicon oxide layer and second oxidation
The reactant that nitride layer uses includes ethyl orthosilicate and oxygen.
5. wafer bonding method as described in any one of claims 1 to 4, which is characterized in that first oxide skin(coating) and
Second oxide skin(coating) is formed by plasma enhanced chemical vapor deposition technique.
6. wafer bonding method as claimed in claim 5, which is characterized in that formed high used by second oxide skin(coating)
Frequency power is 60%~70% of high frequency power used by forming first oxide skin(coating), forms second oxide skin(coating)
Used low frequency power is 75%~85% of low frequency power used by forming first oxide skin(coating).
7. wafer bonding method as claimed in claim 6, which is characterized in that form temperature used by second oxide skin(coating)
Degree is less than or equal to 5 DEG C with temperature difference used by first oxide skin(coating) is formed, and forms second oxide skin(coating) and is adopted
Pressure and the difference for forming pressure used by first oxide skin(coating) are less than or equal to 1Torr.
8. wafer bonding method as described in any one of claims 1 to 4, which is characterized in that first oxide skin(coating)
Thickness is between 1 μm~5 μm, and the thickness of second oxide skin(coating) is between 100 angstroms~1000 angstroms.
9. wafer bonding method as described in any one of claims 1 to 4, which is characterized in that forming first oxidation
After nitride layer, formed before second oxide skin(coating), the wafer bonding returning method：First oxide skin(coating) is executed flat
Smooth chemical industry skill.
10. a kind of wafer bonding structure, which is characterized in that the wafer bonding structure includes：
One device wafers；
One first oxide skin(coating), first oxide skin(coating) are formed in the device wafers；
One second oxide skin(coating), second oxide skin(coating) are formed in the device wafers, the second oxide skin(coating) covering
The consistency of first oxide skin(coating), consistency first oxide skin(coating) of second oxide skin(coating) is high；
One load wafer, the load wafer are bonded together with second oxide skin(coating) in the device wafers.
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| CN201810108058.6A CN108461512A (en) | 2018-02-02 | 2018-02-02 | wafer bonding structure and wafer bonding method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110718453A (en) * | 2019-11-15 | 2020-01-21 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
| CN110718453B (en) * | 2019-11-15 | 2021-08-20 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
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