CN103050551A - 太阳能电池的钝化层及其制造方法 - Google Patents
太阳能电池的钝化层及其制造方法 Download PDFInfo
- Publication number
- CN103050551A CN103050551A CN2012105609801A CN201210560980A CN103050551A CN 103050551 A CN103050551 A CN 103050551A CN 2012105609801 A CN2012105609801 A CN 2012105609801A CN 201210560980 A CN201210560980 A CN 201210560980A CN 103050551 A CN103050551 A CN 103050551A
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- Prior art keywords
- passivation layer
- coating composition
- solar cell
- silk screen
- aluminium oxide
- Prior art date
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
Description
网目数 | 粘度 | 成膜性 | 可图案化 | |
实施例1 | 200 | 5000 | ○ | ○ |
实施例2 | 200 | 40000 | ○ | ○ |
实施例3 | 200 | 70000 | ○ | ○ |
实施例4 | 200 | 74000 | ○ | ○ |
实施例5 | 200 | 22000 | ○ | ○ |
实施例6 | 200 | 18400 | ○ | ○ |
实施例7 | 200 | 3200 | ○ | ○ |
实施例8 | 200 | 2700 | ○ | ○ |
实施例9 | 250 | 15875 | ○ | ○ |
实施例10 | 250 | 17463 | ○ | ○ |
实施例11 | 250 | 11113 | ○ | ○ |
实施例12 | 250 | 19050 | ○ | ○ |
实施例13 | 250 | 17463 | ○ | ○ |
比较例1 | 200 | 1 | × | × |
比较例2 | 200 | 35 | × | × |
载流子生命期(微秒) | |
实施例1 | 27.40 |
实施例2 | 27.09 |
实施例3 | 28.40 |
实施例4 | 31.10 |
实施例5 | 21.59 |
实施例6 | 29.92 |
实施例7 | 23.28 |
实施例8 | 22.88 |
实施例9 | 18.17 |
实施例10 | 31.10 |
实施例11 | 39.00 |
实施例12 | 24.83 |
实施例13 | 20.57 |
空白实验 | 4.95 |
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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TW101111642 | 2012-03-30 | ||
TW101111642A TWI464888B (zh) | 2012-03-30 | 2012-03-30 | 太陽能電池的鈍化層及其製造方法 |
Publications (2)
Publication Number | Publication Date |
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CN103050551A true CN103050551A (zh) | 2013-04-17 |
CN103050551B CN103050551B (zh) | 2017-04-26 |
Family
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CN201210560980.1A Expired - Fee Related CN103050551B (zh) | 2012-03-30 | 2012-12-21 | 太阳能电池的钝化层及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20130255762A1 (zh) |
CN (1) | CN103050551B (zh) |
TW (1) | TWI464888B (zh) |
Cited By (10)
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CN104201245A (zh) * | 2014-09-12 | 2014-12-10 | 合肥海润光伏科技有限公司 | 一种背钝化perc晶体硅太阳能电池的制备方法 |
CN104201252A (zh) * | 2014-09-22 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | 一种perc太阳能电池的制备方法 |
CN104300016A (zh) * | 2014-10-13 | 2015-01-21 | 北京工业大学 | 一种采用SiO2作为Window层的太阳能电池 |
CN104576836A (zh) * | 2015-01-23 | 2015-04-29 | 浙江晶科能源有限公司 | 一种背钝化太阳能电池的制作方法 |
CN105489670A (zh) * | 2015-11-30 | 2016-04-13 | 何晨旭 | 晶硅太阳能电池表面钝化用氧化铝浆料和钝化膜制备方法 |
CN109103294A (zh) * | 2017-06-20 | 2018-12-28 | 镇江大全太阳能有限公司 | 烧穿型局部接触背钝化太阳能电池的制作方法 |
CN109309018A (zh) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | 一种gpp玻钝工艺方法 |
CN109473504A (zh) * | 2017-09-06 | 2019-03-15 | 镇江大全太阳能有限公司 | 一种双面氧化铝钝化背面局部接触高效率晶体硅太阳能电池的制作方法 |
CN109659395A (zh) * | 2018-12-19 | 2019-04-19 | 中山大学 | 一种perc太阳电池的背面钝化方法 |
CN113725319A (zh) * | 2021-08-27 | 2021-11-30 | 常州时创能源股份有限公司 | 一种n型太阳能电池及制造方法 |
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US20140252619A1 (en) * | 2013-03-08 | 2014-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure that avoids insulating layer damage and methods of making the same |
JP6498967B2 (ja) * | 2015-03-10 | 2019-04-10 | 東ソー・ファインケム株式会社 | パッシベーション膜の製造方法、パッシベーション膜、それを用いた太陽電池素子 |
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US10297708B1 (en) | 2018-01-25 | 2019-05-21 | The United States Of America, As Represented By The Secretary Of The Air Force | Surface passivation for PhotoDetector applications |
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- 2012-12-21 CN CN201210560980.1A patent/CN103050551B/zh not_active Expired - Fee Related
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2013
- 2013-02-12 US US13/764,821 patent/US20130255762A1/en not_active Abandoned
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US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
US20100032011A1 (en) * | 2006-09-29 | 2010-02-11 | Erik Sauar | Back contacted solar cell |
CN101504886A (zh) * | 2009-03-02 | 2009-08-12 | 北京大学 | 一种染料敏化电池结构中的纳米复合电极及其制备方法 |
WO2012007143A2 (de) * | 2010-07-12 | 2012-01-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaische solarzelle und verfahren zur herstellung einer photovoltaischen solarzelle |
Cited By (13)
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CN104201245A (zh) * | 2014-09-12 | 2014-12-10 | 合肥海润光伏科技有限公司 | 一种背钝化perc晶体硅太阳能电池的制备方法 |
CN104201252B (zh) * | 2014-09-22 | 2016-08-17 | 苏州阿特斯阳光电力科技有限公司 | 一种perc太阳能电池的制备方法 |
CN104201252A (zh) * | 2014-09-22 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | 一种perc太阳能电池的制备方法 |
CN104300016A (zh) * | 2014-10-13 | 2015-01-21 | 北京工业大学 | 一种采用SiO2作为Window层的太阳能电池 |
CN104576836B (zh) * | 2015-01-23 | 2017-02-22 | 浙江晶科能源有限公司 | 一种背钝化太阳能电池的制作方法 |
CN104576836A (zh) * | 2015-01-23 | 2015-04-29 | 浙江晶科能源有限公司 | 一种背钝化太阳能电池的制作方法 |
CN105489670A (zh) * | 2015-11-30 | 2016-04-13 | 何晨旭 | 晶硅太阳能电池表面钝化用氧化铝浆料和钝化膜制备方法 |
CN109103294A (zh) * | 2017-06-20 | 2018-12-28 | 镇江大全太阳能有限公司 | 烧穿型局部接触背钝化太阳能电池的制作方法 |
CN109309018A (zh) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | 一种gpp玻钝工艺方法 |
CN109309018B (zh) * | 2017-07-26 | 2021-10-08 | 天津环鑫科技发展有限公司 | 一种gpp玻钝工艺方法 |
CN109473504A (zh) * | 2017-09-06 | 2019-03-15 | 镇江大全太阳能有限公司 | 一种双面氧化铝钝化背面局部接触高效率晶体硅太阳能电池的制作方法 |
CN109659395A (zh) * | 2018-12-19 | 2019-04-19 | 中山大学 | 一种perc太阳电池的背面钝化方法 |
CN113725319A (zh) * | 2021-08-27 | 2021-11-30 | 常州时创能源股份有限公司 | 一种n型太阳能电池及制造方法 |
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TW201340343A (zh) | 2013-10-01 |
CN103050551B (zh) | 2017-04-26 |
US20130255762A1 (en) | 2013-10-03 |
TWI464888B (zh) | 2014-12-11 |
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