CN109473504A - 一种双面氧化铝钝化背面局部接触高效率晶体硅太阳能电池的制作方法 - Google Patents
一种双面氧化铝钝化背面局部接触高效率晶体硅太阳能电池的制作方法 Download PDFInfo
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Abstract
本发明公开了一种双面氧化铝钝化背面局部接触高效率晶体硅太阳能电池的制作方法,包括如下步骤:(1)硅片去损伤&制绒;(2)磷扩散;(3)磷硅玻璃去除及背面抛光;(4)氧化铝制备;(5)氮化硅沉积;(6)印刷背电极;(7)背电场印刷;(8)正面印刷;(9)烧结、测试。本发明借鉴PERC电池结构,通过丝网印刷方式制备氧化铝钝化膜实现正反面钝化,整个制作过程不使用TMA(三甲基铝),工艺过程安全可靠、环境友好,而且通过两面氧化铝钝化,大大降低硅片正反面的表面复合,最终实现电池片转换效率的提升。
Description
技术领域
本发明涉及晶体硅太阳能电池制造技术领域,具体涉及一种双面氧化铝钝化背面局部接触高效率晶体硅太阳能电池的制作方法。
背景技术
随着晶体硅太阳能电池技术的不断成熟与进步,度电成本逐渐成为考量一种新的电池工艺及新技术是否顺应市场需求的重要因素。PERC(Passivated Emitter RearContact)电池作为近年新兴的高转换效率电池技术因其生产工艺简单,且与现有常规产线兼容度高而备受关注;近年来更因光伏领跑者项目对电池转换效率要求不断提高, PERC电池得到大范围推广。PERC电池在常规电池工艺基础上在背面做一层氧化铝+氮化硅复合膜来降低背表面复合提升电池转换效率。
目前业内主流的氧化铝钝化膜制备方法有PECVD或者ALD,这两种钝化膜制备方法存在以下缺陷:均要使用到TMA(三甲基铝),一种有毒、易自燃的危险化学品且价格昂贵;不能一次实现正反面氧化铝钝化膜的制备;氧化铝钝化膜沉积设备昂贵,设备投资大;采用这两种方法制备钝化膜厚后,必须用到激光开槽工艺对钝化膜进行开孔来实现浆料与硅基底的电学接触,激光设备昂贵,而且激光开槽对硅基底的损伤不可避免的降低了电池效率提升的幅度。
发明内容
本发明的目的在于:针对现有技术中存在的上述技术问题,提供一种双面氧化铝钝化背面局部接触高效率晶体硅太阳能电池的制作方法。
本发明是通过以下技术方案实现的:
一种双面氧化铝钝化背面局部接触高效率晶体硅太阳能电池的制作方法,包括如下步骤:
(1)硅片去损伤&制绒:选择P型硅片作为硅基体,在酸液下进行硅片去损伤及表面绒面制备;
(2)磷扩散:对硅片的制绒面进行磷扩散形成N型层,扩散自然形成的磷硅玻璃作为绒面的掩膜以便实现背面去除发射结以及背抛光的目的;
(3)磷硅玻璃去除及背面抛光:去除背面磷硅玻璃后,进行背抛光并清洗;
(4)氧化铝钝化膜制备:在硅片的正/背面通过丝网印刷形成氧化铝钝化膜,烘干并退火, 氧化铝钝化膜厚度30-100nm;
(5)氮化硅沉积:在硅片的正/背面沉积氮化硅减反射薄膜,镀膜厚度75-85nm,折射率2.08-2.14;
(6)印刷背电极:背面印刷背电极,烘干,烘干温度100℃-300℃,烘干时间20-60S;
(7)背电场印刷:背面印刷可烧穿氮化硅的铝浆,烘干,烘干温度100℃-300℃,烘干时间20-60S;
(8)正面印刷:正面印刷银浆,烘干,烘干温度100℃-300℃,烘干时间20-60S;
(9)烧结、测试:烧结温度700℃-800℃,烧结时间20-60S,烧结过程中铝浆烧穿背面氮化硅薄膜,通过镂空处与硅基底形成良好的欧姆接触及局部铝背场。
进一步,所述步骤(4)中的丝网印刷制备氧化铝钝化膜是将印刷钝化膜图形设计为点阵或者局部镂空设计直接将需要与浆料进行电学接触的硅基底区域空出。
综上所述,由于采用了上述技术方案,本发明的有益效果是:
1、本发明借鉴PERC电池结构,通过丝网印刷方式制备氧化铝钝化膜实现正反面钝化,整个制作过程不使用TMA(三甲基铝),工艺过程安全可靠、环境友好,而且通过两面氧化铝钝化,大大降低硅片正反面的表面复合,最终实现电池片转换效率的提升。
2、本发明通过丝网印刷实现了正反面氧化铝钝化膜的制备,工艺技术简单、稳定,丝网印刷制备氧化铝钝化膜可将印刷钝化膜图形设计为点阵或者局部镂空设计直接将需要与浆料进行电学接触的硅基底区域空出,省去激光开槽过程,也避免激光开槽对硅片造成损伤。
附图说明
图1是本发明的背面印刷网版一结构示意图;
图2是本发明的背面印刷网版二结构示意图;
图3是本发明的正面印刷网版结构示意图;
图中所示:1—硅片轮廓,2—乳剂掩模区,4—氧化铝钝化膜浆料印刷区,5—正面银浆印刷区。
具体实施方式
本说明书中公开的所有特征,或公开的所有方法或过程中的步骤,除了互相排斥的特征和/或步骤以外,均可以以任何方式组合。
本说明书(包括任何附加权利要求、摘要)中公开的任一特征,除非特别叙述,均可被其他等效或具有类似目的的替代特征加以替换。即,除非特别叙述,每个特征只是一系列等效或类似特征中的一个例子而已。
一种双面氧化铝钝化背面局部接触高效率晶体硅太阳能电池的制作方法,包括如下步骤:
(1)硅片去损伤&制绒:选择P型硅片作为硅基体,在酸液下进行硅片去损伤及表面绒面制备;
(2)磷扩散:对硅片的制绒面进行磷扩散形成N型层,扩散自然形成的磷硅玻璃作为绒面的掩膜以便实现背面去除发射结以及背抛光的目的;
(3)磷硅玻璃去除及背面抛光:去除背面磷硅玻璃后,进行背抛光并清洗;
(4)氧化铝钝化膜制备:在硅片的正/背面通过丝网印刷形成氧化铝钝化膜,烘干并退火, 氧化铝钝化膜厚度30-100nm;
(5)氮化硅沉积:在硅片的正/背面沉积氮化硅减反射薄膜,镀膜厚度75-85nm,折射率2.08-2.14;
(6)印刷背电极:背面印刷背电极,烘干,烘干温度100℃-300℃,烘干时间20-60S;
(7)背电场印刷:背面印刷可烧穿氮化硅的铝浆,该铝浆可以直接购买,烘干,烘干温度100℃-300℃,烘干时间20-60S;
(8)正面印刷:正面印刷银浆,该银浆可以直接购买,烘干,烘干温度100℃-300℃,烘干时间20-60S;
(9)烧结、测试:烧结温度700℃-800℃,烧结时间20-60S,烧结过程中铝浆烧穿背面氮化硅薄膜,通过镂空处与硅基底形成良好的欧姆接触及局部铝背场。
本实施例中,所述步骤(4)中的丝网印刷制备氧化铝钝化膜是将印刷钝化膜图形设计为点阵或者局部镂空设计直接将需要与浆料进行电学接触的硅基底区域空出。
如图1所示,PERC正面印刷版面,图中的白色填充部分为氧化铝钝化膜浆料印刷区4,黑色部分为正面银浆印刷区5,以便实现银浆与硅基底的电学接触,最外面为硅片轮廓1。
如图2所示,PERC背面印刷版面,图中的圆圈内为乳剂掩模区2,该区域不印刷氧化铝钝化浆料,是为铝浆与硅基底形成BSF层的预留区域,最外面为硅片轮廓1。
如图3所示,PERC背面印刷版面,图中的矩形框为乳剂掩模区2,该区域不印刷氧化铝钝化浆料,是为铝浆与硅基底形成BSF层的预留区域,最外面为硅片轮廓1。
采用本发明的工艺方法,一方面可大幅度降低制备氧化铝钝化膜的设备投资;通过两面氧化铝钝化,大大降低硅片正反面的表面复合,最终实现电池片转换效率的提升。
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明。本发明扩展到任何在本说明书中披露的新特征或任何新的组合,以及披露的任一新的方法或过程的步骤或任何新的组合。
Claims (2)
1.一种双面氧化铝钝化背面局部接触高效率晶体硅太阳能电池的制作方法,其特征在于,包括如下步骤:
(1)硅片去损伤&制绒:选择P型硅片作为硅基体,在酸液下进行硅片去损伤及表面绒面制备;
(2)磷扩散:对硅片的制绒面进行磷扩散形成N型层,扩散自然形成的磷硅玻璃作为绒面的掩膜以便实现背面去除发射结以及背抛光的目的;
(3)磷硅玻璃去除及背面抛光:去除背面磷硅玻璃后,进行背抛光并清洗;
(4)氧化铝钝化膜制备:在硅片的正/背面通过丝网印刷形成氧化铝钝化膜,烘干并退火, 氧化铝钝化膜厚度30-100nm;
(5)氮化硅沉积:在硅片的正/背面沉积氮化硅减反射薄膜,镀膜厚度75-85nm,折射率2.08-2.14;
(6)印刷背电极:背面印刷背电极,烘干,烘干温度100℃-300℃,烘干时间20-60S;
(7)背电场印刷:背面印刷可烧穿氮化硅的铝浆,烘干,烘干温度100℃-300℃,烘干时间20-60S;
(8)正面印刷:正面印刷银浆,烘干,烘干温度100℃-300℃,烘干时间20-60S;
(9)烧结、测试:烧结温度700℃-800℃,烧结时间20-60S,烧结过程中铝浆烧穿背面氮化硅薄膜,通过镂空处与硅基底形成良好的欧姆接触及局部铝背场。
2.如权利要求1所述的双面氧化铝钝化背面局部接触高效率晶体硅太阳能电池的制作方法,其特征在于,所述步骤(4)中的丝网印刷制备氧化铝钝化膜是将印刷钝化膜图形设计为点阵或者局部镂空设计直接将需要与浆料进行电学接触的硅基底区域空出。
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