CN104300016A - 一种采用SiO2作为Window层的太阳能电池 - Google Patents
一种采用SiO2作为Window层的太阳能电池 Download PDFInfo
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- CN104300016A CN104300016A CN201410539485.1A CN201410539485A CN104300016A CN 104300016 A CN104300016 A CN 104300016A CN 201410539485 A CN201410539485 A CN 201410539485A CN 104300016 A CN104300016 A CN 104300016A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 10
- 229910052681 coesite Inorganic materials 0.000 title abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 title abstract 5
- 239000000377 silicon dioxide Substances 0.000 title abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 title abstract 5
- 229910052682 stishovite Inorganic materials 0.000 title abstract 5
- 229910052905 tridymite Inorganic materials 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 22
- 229910052737 gold Inorganic materials 0.000 claims description 18
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000005641 tunneling Effects 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 240000004808 Saccharomyces cerevisiae Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004523 agglutinating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
一种采用SiO2作为Window层的太阳能电池，包括有包括衬底、电池PN结构、SiO2Window层、Contact接触层；其中，所述衬底、电池PN结构、SiO2Window层、Contact接触层从上至下依次层叠设置。通过采用1-3nmSiO2薄层作为太阳能电池的Window层，通过隧穿效应与电池PN结相连接，可以非常有利于减少太阳光子能量损失，提高太阳能电池转换效率。
Description
技术领域
本发明涉及一种采用SiO2作为Window层的太阳能电池的制备方法，属半导体芯片技术领域。
背景技术
随着现代工业的发展，全球能源危机和大气污染问题日益突出，太阳能作为理想的可再生能源受到了越来越多国家的重视，开展太阳能电池研究、发展光伏发电产业对国家能源的可持续发展具有非常重要的意义。目前，太阳能电池的面临的主要问题为光电转换效率较低，性价比不高，不能满足大规模民用的需求。
SiO2具有硬度高、耐磨性好、绝热性好、光透过率高、抗侵蚀能力强以及良好的介电性质。通过对各种制备方法、制备工艺的开发和不同组分配比对SiO2薄膜的影响研究，制备具有优良性能的透明SiO2薄膜的工作已经取得了很大进展。在薄膜在诸多领域得到了很好的应用。
采用禁带宽度约为9eV的SiO2薄层作为太阳能电池的Window层，基本不吸收太阳光谱，可以有效的减少短波长光子能量损失，提高太阳能电池转换效率。
发明内容
本发明要解决的技术问题是减少Window层对太阳光的吸收，提高太阳能电池转换效率。
为实现上述目的，本发明采用的技术方案为一种采用SiO2作为Window层的太阳能电池，包括衬底1、电池PN结构2、SiO2Window层3、Contact接触层4。
采用禁带宽度约为9eV的SiO2超薄层(1-3nm)作为太阳能电池的Window层，基本不吸收太阳光谱，可以有效的减少短波长光子能量损失，提高太阳能电池转换效率。此外，SiO2具有硬度高、耐磨性好、绝热性好、光透过率高、抗侵蚀能力强以及良好的介电性质。同时，SiO2薄层制备方法已非常成熟、具有价格低廉、可控性高等优点。
在衬底1上完成电池PN结构2制备后，在电池PN结构2上制备一层SiO2Window层3，在SiO2Window层3上制备Contact接触层4。由于该SiO2Window层3厚度为1-3nm，Contact接触层4中的电子或空穴可通过量子效应，隧穿至SiO2Window层3中，形成闭合回路。
与现有技术相比，通过采用1-3nmSiO2薄层作为太阳能电池的Window层，通过隧穿效应与电池PN结相连接，可以非常有利于减少太阳光子能量损失，提高太阳能电池转换效率。
附图说明
图1是隧穿效应原理示意图。
图2SiO2Window层太阳能电池结构图。
具体实施方式
下面结合实施例对本发明作进一步描述，但不应以此限制本发明的保护范围。
实施例一：一种采用SiO2作为Window层的太阳能电池制备方法，包括下列步骤：
1、其衬底1可为Si、Ge、SiC、Al2O3、InP中的一种。
2、生长太阳能电池PN结2。可采用MBE、MOCVD、热扩散、以及其他CVD方法等方法。所示电池结构可为单节或多节结构，其所用材料为Si、Ge、InAs、GaAs、GaInAsN、ZnSeS、GaInP、InGaN、AlGaInP中的一种或几种组合。
3、在太阳能电池PN结2上制备SiO2Window层3。可采用磁控溅射、离子束溅射、化学气相沉积、热氧化法、凝胶－溶胶法。
4、采用磁控溅射法或电子束蒸镀法制备金属薄膜在SiO2Window层3上制备接触层4。接触层可为Ti/Au、Ti/Pt/Au、Ti/Al/Au、Ni、Ni/Au、Cr/Au、Pd、Ti/Pd/Au、Pd/Au中的一种。
所述SiO2Window层3厚度1-3um。
衬底1可为Si、Ge、SiC、Al2O3、InP中的一种。
生长太阳能电池PN结可采用MBE、MOCVD、热扩散以及其他CVD方法方法。电池结构可为单节或多节结构，其所用材料为Si、Ge、InAs、GaAs、GaInAsN、ZnSeS、GaInP、InGaN、AlGaInP中的一种或几种组合。
Contact接触层4可为Ti/Au、Ti/Pt/Au、Ti/Al/Au、Ni、Ni/Au、Cr/Au、Pd、Ti/Pd/Au、Pd/Au中的一种。
Claims (5)
1.一种采用SiO2作为Window层的太阳能电池，其特征在于：包括有包括衬底(1)、电池PN结构(2)、SiO2Window层(3)、Contact接触层(4)；其中，所述衬底(1)、电池PN结构(2)、SiO2Window层(3)、Contact接触层(4)从上至下依次层叠设置。
2.根据权利要求1所述一种采用SiO2作为Window层的太阳能电池，其特征在于：所述SiO2Window层(3)厚度1-3um。
3.根据权利要求1所述的一种采用SiO2作为Window层的太阳能电池，其特征在于：其衬底(1)可为Si、Ge、SiC、Al2O3、InP中的一种。
4.根据权利要求1所述的一种采用SiO2作为Window层的太阳能电池，其特征在于：生长太阳能电池PN结可采用MBE、MOCVD、热扩散以及其他CVD方法方法。电池结构可为单节或多节结构，其所用材料为Si、Ge、InAs、GaAs、GaInAsN、ZnSeS、GaInP、InGaN、AlGaInP中的一种或几种组合。
5.根据权利要求1所述的一种采用SiO2作为Window层的太阳能电池，其特征在于：Contact接触层(4)可为Ti/Au、Ti/Pt/Au、Ti/Al/Au、Ni、Ni/Au、Cr/Au、Pd、Ti/Pd/Au、Pd/Au中的一种。
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106816491A (zh) * | 2015-12-01 | 2017-06-09 | 韩山师范学院 | 硅基太阳能电池及其制造方法 |
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| CN103107227A (zh) * | 2012-12-06 | 2013-05-15 | 杭州赛昂电力有限公司 | 非晶硅薄膜太阳能电池及其制作方法 |
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Patent Citations (4)
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| CN101677113A (zh) * | 2008-09-11 | 2010-03-24 | 应用材料股份有限公司 | 用于基于薄膜和晶片的太阳能应用的微晶硅合金 |
| CN103000755A (zh) * | 2011-09-07 | 2013-03-27 | 气体产品与化学公司 | 用于光伏钝化的前体 |
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| CN103107227A (zh) * | 2012-12-06 | 2013-05-15 | 杭州赛昂电力有限公司 | 非晶硅薄膜太阳能电池及其制作方法 |
Non-Patent Citations (1)
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Cited By (1)
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| CN106816491A (zh) * | 2015-12-01 | 2017-06-09 | 韩山师范学院 | 硅基太阳能电池及其制造方法 |
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