CN103050516A - 精确控制eb结位置和eb结反向击穿电压的结构 - Google Patents

精确控制eb结位置和eb结反向击穿电压的结构 Download PDF

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CN103050516A
CN103050516A CN2011103105228A CN201110310522A CN103050516A CN 103050516 A CN103050516 A CN 103050516A CN 2011103105228 A CN2011103105228 A CN 2011103105228A CN 201110310522 A CN201110310522 A CN 201110310522A CN 103050516 A CN103050516 A CN 103050516A
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韩峰
刘冬华
胡君
段文婷
石晶
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Abstract

本发明公开了一种精确控制锗硅异质结三极管EB结位置及其反向耐压的结构，包括是集电区，基区和发射区；集电区由有源区通过N型掺杂构成；基区有锗硅外延生长构成，生长过程中掺入P型杂质；而发射区则是由多晶硅构成；基区外延层中的覆盖层中的掺杂类型为N型。本发明主要是优化基区的掺杂分布，将基区外延层中的覆盖层中的掺杂类型由P型的硼(B)替换成N型的磷或者砷(As)。藉由外延生长中精确控制掺入N型杂质的位置和浓度，与原外延中硼的掺杂配合，从而达到精确控制EB结的位置，同时也实现了EB结反向耐压的可调。本发明能增加工艺稳定性，改善面内的均匀性，减少原本为控制EB位置的热过程。

Description

精确控制EB结位置和EB结反向击穿电压的结构
技术领域
本发明涉及集成电路制造领域。
背景技术
在射频应用中，需要越来越高的器件特征频率，RFCMOS虽然在先进的工艺技术中可实现较高频率，但还是难以完全满足射频要求，如很难实现40GHz以上的特征频率，而且先进工艺的研发成本也是非常高；化合物半导体可实现非常高的特征频率器件，但由于材料成本高、尺寸小的缺点，加上大多数化合物半导体有毒，限制了其应用。SiGe HBT则是超高频器件的很好选择，首先其利用SiGe与Si的能带差别，提高发射区的载流子注入效率，增大器件的电流放大倍数；其次利用SiGe基区的高掺杂，降低基区电阻，提高特征频率；另外SiGe工艺基本与硅工艺相兼容，因此SiGe HBT已经成为超高频器件的主力军。
由此可见，为了进一步提高特征频率，基区减薄和提高基区的掺杂浓度是有效而易被采用的手段之一。但掺杂浓度的提高带来的负面影响就是EB结反向耐压的降低。
另一方面，基区的减薄，对精确控制EB结的形成位置也带来更高的要求。其对工艺不稳定性的容忍度也减低。而为了形成合适的EB结，就必须控制好最后的退火温度和时间，使多晶硅发射极中的N型杂质扩散进基区外延层。如果扩散进太少，电流增益会太小；反之则会造成增益太大，B V c e o太小，工艺稳定性不可控。
发明内容
本发明所要解决的技术问题是提供一种精确控制锗硅异质结三极管EB结位置及其反向耐压的结构，它可以精确控制EB结的位置，同时也实现了EB结反向耐压的可调，能增加工艺稳定性，改善面内的均匀性，减少原本为控制EB位置的热过程。
为了解决以上技术问题，本发明提供了一种精确控制锗硅异质结三极管EB结位置及其反向耐压的结构，其特征在于，包括是集电区，基区和发射区；集电区由有源区通过N型掺杂构成；基区有锗硅外延生长构成，生长过程中掺入P型杂质；而发射区则是由多晶硅构成；基区外延层中的覆盖层中的掺杂类型为N型。
本发明的有益效果在于：提供了一种精确控制锗硅异质结三极管EB结位置及其反向耐压的器件设计。此器件设计主要是优化基区的掺杂分布，将基区外延层中的覆盖层中的掺杂类型由P型的硼(B)替换成N型的磷或者砷(As)。藉由外延生长中精确控制掺入N型杂质的位置和浓度，与原外延中硼的掺杂配合，从而达到精确控制EB结的位置，同时也实现了EB结反向耐压的可调。本发明能增加工艺稳定性，改善面内的均匀性，减少原本为控制EB位置的热过程。
基区外延层主要有三成构成：缓冲层，锗硅层，覆盖层。
所述缓冲层不掺入任何杂质。
所述锗硅层中掺入锗和P型杂质，浓度有器件目标性能来决定。
覆盖层掺入N型杂质，其浓度和掺杂位置与锗硅层的P型杂质一起决定了EB结的位置与EB结反向击穿耐压。
基区外延层中的覆盖层中的掺杂类型为N型的磷或者砷。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细说明。
图1是本发明所述锗硅HBT器件结构示意图；
图2(1)是现有SiGe HBT基区和发射区的热退火之前的掺杂分布示意图；
图2(2)是现有SiGe HBT基区和发射区的热退火之后的掺杂分布示意图；
图2(3)是本发明SiGe HBT基区和发射区的热退火之前的掺杂分布示意图；
图2(4)是本发明SiGe HBT基区和发射区的热退火之后的掺杂分布示意图。
具体实施方式
本发明的具体技术方案如图1、图2所示，包括：
1.完整的器件结构如图1所示；其主要构成部分是集电区1，基区2和发射区3；
2.集电区由有源区通过N型掺杂构成；基区有锗硅外延生长构成，生长过程中掺入P型杂质；而发射区则是由多晶硅构成；
3.多晶硅通过注入或者在位掺杂掺入N型杂质，然后通过退火使杂质扩散进外延基区；传统的做法是通过这道退火来控制EB结形成在外延层中有锗的区域，其对退火的温度、时间和多晶硅中掺杂的浓度要求很高；
4.基区外延层主要有三成构成：缓冲层，这一层不掺入任何杂质；锗硅层：此层中掺入锗和P型杂质，浓度有器件目标性能来决定；覆盖层：参入N型杂质，请浓度和掺杂位置与锗硅层的P型杂质一起决定了EB结的位置与EB结反向击穿耐压；
5.最后一步退火过程只要求实现多晶硅中的杂质在多晶硅中分布均匀，并扩散进基区外延层的覆盖层与N型的覆盖层实现良好连接；无需这一步退火来实现对EB结成型的控制。因此退火温度可降低，或者退火时间减少，大大提高工艺窗口，增加工艺稳定性。
本发明提出的此种EB节位置反向耐压优化设计的锗硅异质结三极管器件，该器件的主要特征有：
1、优化设计锗硅外延层掺杂分布，达到精确控制EB结位置和反向耐压的目的；
2、发射极多晶硅采用非掺杂的多晶硅；
3、工艺稳定性和硅片的面内均匀性得以改善；相关热过程减少。
本发明并不限于上文讨论的实施方式。以上对具体实施方式的描述旨在于为了描述和说明本发明涉及的技术方案。基于本发明启示的显而易见的变换或替代也应当被认为落入本发明的保护范围。以上的具体实施方式用来揭示本发明的最佳实施方法，以使得本领域的普通技术人员能够应用本发明的多种实施方式以及多种替代方式来达到本发明的目的。

Claims (6)

1.一种精确控制锗硅异质结三极管EB结位置及其反向耐压的结构，其特征在于，包括是集电区(1)，基区(2)和发射区(3)；
集电区由有源区通过N型掺杂构成；
基区有锗硅外延生长构成，生长过程中掺入P型杂质；
而发射区则是由多晶硅构成；
基区外延层中的覆盖层中的掺杂类型为N型。
2.如权利要求1所述的精确控制锗硅异质结三极管EB结位置及其反向耐压的结构，其特征在于，基区外延层主要有三成构成：缓冲层，锗硅层，覆盖层。
3.如权利要求2所述的精确控制锗硅异质结三极管EB结位置及其反向耐压的结构，其特征在于，所述缓冲层不掺入任何杂质。
4.如权利要求2所述的精确控制锗硅异质结三极管EB结位置及其反向耐压的结构，其特征在于，所述锗硅层中掺入锗和P型杂质，浓度有器件目标性能来决定。
5.如权利要求2所述的精确控制锗硅异质结三极管EB结位置及其反向耐压的结构，其特征在于，覆盖层掺入N型杂质，其浓度和掺杂位置与锗硅层的P型杂质一起决定了EB结的位置与EB结反向击穿耐压。
6.如权利要求2所述的精确控制锗硅异质结三极管EB结位置及其反向耐压的结构，其特征在于，基区外延层中的覆盖层中的掺杂类型为N型的磷或者砷。
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JP6086648B2 (ja) * 2012-03-12 2017-03-01 国立研究開発法人産業技術総合研究所 フォトトランジスタおよび撮像装置

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111048584A (zh) * 2019-12-23 2020-04-21 复旦大学 一种高线性氮化镓hbt射频功率器件及其制备方法
CN111048584B (zh) * 2019-12-23 2021-05-11 复旦大学 一种高线性氮化镓hbt射频功率器件及其制备方法

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