CN103035621B - 超级结mosfet的终端保护结构 - Google Patents
超级结mosfet的终端保护结构 Download PDFInfo
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- CN103035621B CN103035621B CN201210174555.9A CN201210174555A CN103035621B CN 103035621 B CN103035621 B CN 103035621B CN 201210174555 A CN201210174555 A CN 201210174555A CN 103035621 B CN103035621 B CN 103035621B
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- polycrystalline silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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CN201210174555.9A CN103035621B (zh) | 2012-05-30 | 2012-05-30 | 超级结mosfet的终端保护结构 |
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CN201210174555.9A CN103035621B (zh) | 2012-05-30 | 2012-05-30 | 超级结mosfet的终端保护结构 |
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CN103035621A CN103035621A (zh) | 2013-04-10 |
CN103035621B true CN103035621B (zh) | 2015-06-03 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101271898A (zh) * | 2008-03-18 | 2008-09-24 | 苏州硅能半导体科技股份有限公司 | 带有多晶硅场板的功率mos场效应管及其制造方法 |
CN101814528A (zh) * | 2010-05-04 | 2010-08-25 | 无锡新洁能功率半导体有限公司 | 一种具有改进型终端的半导体器件及其制造方法 |
CN102054865A (zh) * | 2009-11-05 | 2011-05-11 | 上海华虹Nec电子有限公司 | 用作静电保护结构的mos晶体管及其制造方法 |
CN102214689A (zh) * | 2010-04-06 | 2011-10-12 | 上海华虹Nec电子有限公司 | 超级结器件的终端保护结构及其制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006073740A (ja) * | 2004-09-01 | 2006-03-16 | Toshiba Corp | 半導体装置及びその製造方法 |
CN101978502B (zh) * | 2008-03-17 | 2012-11-14 | 三菱电机株式会社 | 半导体器件 |
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- 2012-05-30 CN CN201210174555.9A patent/CN103035621B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101271898A (zh) * | 2008-03-18 | 2008-09-24 | 苏州硅能半导体科技股份有限公司 | 带有多晶硅场板的功率mos场效应管及其制造方法 |
CN102054865A (zh) * | 2009-11-05 | 2011-05-11 | 上海华虹Nec电子有限公司 | 用作静电保护结构的mos晶体管及其制造方法 |
CN102214689A (zh) * | 2010-04-06 | 2011-10-12 | 上海华虹Nec电子有限公司 | 超级结器件的终端保护结构及其制造方法 |
CN101814528A (zh) * | 2010-05-04 | 2010-08-25 | 无锡新洁能功率半导体有限公司 | 一种具有改进型终端的半导体器件及其制造方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140120 |
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Effective date of registration: 20140120 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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