CN103035593B - 封装结构上的封装件及其制造方法 - Google Patents

封装结构上的封装件及其制造方法 Download PDF

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Publication number
CN103035593B
CN103035593B CN201210011507.8A CN201210011507A CN103035593B CN 103035593 B CN103035593 B CN 103035593B CN 201210011507 A CN201210011507 A CN 201210011507A CN 103035593 B CN103035593 B CN 103035593B
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China
Prior art keywords
substrate
hole
packaging part
tube core
connecting element
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CN103035593A (zh
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林文益
游明志
林柏尧
卢景睿
吴俊毅
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明涉及的是一种封装结构上的封装件，该封装结构上的封装件通过在第一封装件和第二封装件之间引入刚性热连接件来改进导热性和机械强度。该第一封装件具有第一衬底和穿过第一衬底的通孔。第一组传导元件与第一衬底的通孔相对准并且与其相连接。刚性热连接件与第一组传导元件以及第二封装件的管芯相连接。第二组传导元件与管芯相连接，底部衬底与第二组传导元件相连接。散热连接件可以是，例如，中介层、散热器或导热层。本发明还提供了一种封装结构上的封装件及其制造方法。

Description

封装结构上的封装件及其制造方法
技术领域
本发明涉及半导体领域，更具体地，本发明涉及一种封装结构上的封装件及其制造方法。
背景技术
由于提供了更高密度的电子器件，堆叠封装件(POP)在集成电路封装技术中越来越受欢迎。但POP中的底部封装件的管芯功率增大不仅导致散热失效，而且导致由封装件部件之间的热膨胀不匹配而出现的严重的热应力和翘曲。
发明内容
为了解决现有技术中所存在的问题，根据本发明的一个方面，提供了一种半导体器件，包括：第一封装件，包括第一衬底和穿过所述第一衬底的通孔；第一组传导元件，与所述第一衬底的所述通孔对准，并且与所述第一衬底的所述通孔相连接；刚性热连接件，与所述第一组传导元件相连接；管芯，与所述刚性热连接件相连接；第二组传导元件，与所述管芯相连接；以及底部衬底，与所述第二组传导元件相连接。
在该半导体器件中，所述刚性热连接件包括：半导体中介层，所述半导体中介层具有穿过其而形成的通孔。
在该半导体器件中，所述中介层具有从大约100微米到大约300微米的厚度。
在该半导体器件中，所述中介层的所述通孔具有从大约0.1mm至大约0.3mm的间距。
在该半导体器件中，所述中介层的所述通孔具有从大约2至大约6的纵横比。
在该半导体器件中，所述刚性热连接件包括散热器。
在该半导体器件中，所述热连接件具有宽度，并且所述管芯也具有宽度，其中，所述散热连接件的宽度是所述管芯的宽度的大约1.2倍至大约1.5倍。
根据本发明的另一方面，提供了一种封装件，包括：第一封装件，具有形成第一衬底上的第一管芯；第二封装件，具有形成第二衬底上的第二管芯；以及刚性导热体，位于所述第一封装件和所述第二封装件之间，并且将所述第二管芯与所述第一衬底热连接。
在该封装件中，还包括：第一组连接器元件，将所述第二管芯与所述第二衬底电连接；第二组连接器元件，将所述第一管芯与所述第二衬底电连接；以及第三组连接器元件，配置为将所述第二衬底与另一个电路电连接。
在该封装件中，所述导热体包括：中介层，所述中介层具有穿过其的通孔。
在该封装件中，所述第一衬底包括热传导层和导热通孔，所述封装件还包括：第四组连接器元件，与所述导热通孔对准，并且将所述导热通孔与所述通孔相连接。
在该封装件中，所述第二管芯具有第一宽度，所述导热体具有大于所述第一宽度的第二宽度。
在该封装件中，所述第二宽度是所述第一宽度的大约1.2倍至1.5倍。
在该封装件中，所述导热体包括与所述第二管芯热连接的散热器；所述第一衬底包括热传导层和导热通孔；并且其中，所述第二管芯通过所述导热通孔与所述热传导层热连接。
在该封装件中，还包括：热界面材料，位于所述散热器和所述第一衬底之间。
在该封装件中，所述导热体是填充所述第二管芯和所述第一衬底之间的间隙的热传导材料。
根据本发明的又一方面，提供了一种形成封装件的方法，包括：提供第一封装件，所述第一封装件包括位于第一衬底上的第一管芯，所述第一衬底中具有导热层；提供第二封装件，所述第二封装件包括位于第二衬底上的第二管芯；以及通过刚性导热体将所述第二管芯与所述第一衬底热连接。
在该方法中，还包括：在所述第一衬底中形成导热通孔；在所述刚性导热体中形成通孔；以及将所述导热通孔与所述通孔对准，并且利用连接器元件将所述导热通孔与所述通孔热连接。
在该方法中，还包括：将所述第一管芯与所述第一衬底电连接，并且将所述第一衬底与所述第二衬底电连接。
在该方法中，热连接所述第二管芯和所述第一衬底选自于基本上由以下步骤所构成的组：在所述第二管芯和所述第一衬底之间插入中介层，在所述第二管芯和所述第一衬底之间插入散热器，以及在所述第二管芯和所述第一衬底之间的间隙中插入热传导材料。
附图说明
为了全面理解本公开及其优点，现在结合附图进行以下描述作为参考，其中：
图1a至图1e是制造第一实施例器件的步骤的截面图；
图2a至图2e是制造第二实施例器件的步骤的截面图；以及
图3a至图3d是制造第三实施例器件的步骤的截面图。
具体实施方式
将参考图1至图3来描述形成堆叠封装件(PoP)的各个步骤。应该理解，在此所述的材料、几何形状、尺寸、结构以及工艺参数仅仅是实例，并不用于并且不被理解成限制在本文中所申请的发明。一旦获悉本公开，本领域的技术人员则可作出多种更换和更改。
将参考图1(包括图1a至图1e)论述第一个实施例封装件。图1a示出的是将使用在PoP封装件中的顶部封装件1。顶部封装件1可以使用塑料球栅阵列(PBGA)封装件组装工艺或类似的工艺形成，并且包括了多个堆叠的管芯2，这些堆叠的管芯可以通过接触件16(在相应的堆叠管芯2上)、接合引线6以及接触件12(在项部衬底10上)与顶部衬底10引线接合。单个堆叠的管芯可以包括存储芯片、逻辑芯片、处理器芯片或类似的芯片。尽管图1a示出了三个堆叠的管芯，但这仅用于说明。同样地，引线接合的使用也仅仅是说明性的，而其他用于电连接堆叠管芯的方法仍处于本公开的预期范围之内。
顶部衬底10可以是包括了交替的不导电的聚合物层(诸如，双马来酰亚胺-三嗪树脂(BT))以及经过图案化的(或未经过图案化的)导电层的层压电路板。如上所述，顶部衬底10具有位于第一面(出于简便在本文中有时被称为顶面)上的用于电连接至堆叠管芯2的接触件12。顶部衬底10还具有位于第二面(有时被称为底面)上的用于电连接至下面将进一步详细描述的其他部件的接触件24。
图1a进一步示出了顶部衬底10的底面上的接地焊盘18。如将更详细地根据图1e所解释的那样，接地焊盘18为源于底部封装件的热量提供了导热路径，该底部封装件随后将接合于顶部封装件1。可以通过导热通孔22来实现与接地焊盘18的电接触和/或热接触，该导热通孔可以由铜、焊料、铝或其他导电材料形成。
图1b示出了将顶部封装件1接合至中介层30。中介层30可以由半导体材料(诸如，硅、锗或砷酸镓)构成。中介层30可以具有大约100微米至大约300微米的厚度。通孔32穿过中介层30，该通孔32可以由铜构成或可以由钨、铝、焊料或类似的所构成。通孔32可以与焊料凸块26对准，该焊料凸块26将中介层30与顶部封装件1电连接和热连接。可选地，通孔32可以不与焊料凸块26对准。更具体地，通孔32通过焊料凸块26和导热通孔22与接地焊盘18电连接和/或热连接。底部填充件28可以围绕着焊料凸块26。尽管示出的是焊料凸块，但也可以通过焊球、铜凸块、铜柱或其他连接器元件实现中介层30和顶部封装件1之间的连接。因此，连接器元件这一术语在本文中指的是焊料凸块或连接器元件26的任意其他形式。
通孔32可以具有大约0.1mm至大约0.3mm的间距(pitch)。通孔32具有大约2至大约6的纵横比，该纵横比被限定为中介层30的厚度与通孔32的宽度的比例。可以相信，该纵横比提供的是用于改进所得到的封装件的导热性的最有利的范围。通孔32也可以具有在大约0.1mm至大约0.3mm范围内的有利地导热的间距(即，中心间距，centertocenterspacing)。通孔32可以由铜表面或铝表面构成，该表面填充有高导热性材料，诸如，铜、钨、铝或聚合物。除了提供了改进的导热性之外，中介层30还为所得到的封装件提供了机械固化。通过这种方式，中介层30提供了抗翘曲硬度和阻力，另外，该翘曲可以是由顶部封装件1和底部封装件34(图1d中示出)之间的热膨胀系数(CTE)不匹配导致的。
继续参考图1c，焊球36与顶部衬底10的底部接触件24相接合。焊球36使得顶部封装件1和底部封装件34(未示出，但图1d中示出)之间形成电连接和/或热连接。在所示的实施例中，焊球36为堆叠管芯2提供了信号和电源的电传导。此外，还可以使用其他连接部件(诸如，导电凸块、导电球、导电柱等)代替焊球36。
如图1d所示，底部封装件34与顶部封装件1相接合。底部封装件34包括管芯37，该管芯37是与底部衬底38相接合的倒装芯片，并且该管芯通过连接器元件39与该底部衬底电连接。管芯37和下面的主板或其他电路(未示出)之间的电连接由通孔40来提供，该通孔40与位于底部衬底38的一个面上的连接器元件39以及位于底部衬底38的另一个面上的连接器元件42对准。顶部衬底10和下面的主板或其他电路之间的电连接同样由连接器元件36、通孔40以及连接器元件42提供。
图1d所示的封装件的有利特征在于，在管芯37(在底部封装件34中)和顶部封装件10中的导热层27(诸如，接地平面，图1e中示出)之间提供导热路径。如下面所述地提供该导热路径。与底部衬底38相连接的倒装芯片式管芯37具有与中介层30相接合的所谓的背面。如上所述，中介层30包括多个通孔32，这些通孔提供了良好的导热性。可以将散热界面材料48的层应用于管芯37。散热界面材料48可以包括焊膏、高导性黏合剂或热脂。通过这种方式，可以将热量从管芯37中导走并且导向与中介层30相接合的顶部衬底10。
图1e提供了中介层30和顶部衬底10的更详细的视图。顶部衬底10可以是具有介电层和导电层的多层的层压衬底。层27(可以是接地平面、电源平面或类似的层)的层27是传导层的说明性实例。在所示实施例中，可以通过由箭头29所示的导热路径将热量从管芯37中导出。例如，可以从管芯37中通过散热界面材料48将热量导向中介层30。如上所述，穿过中介层30的通孔32提供了良好的导热性。通过连接器元件26(焊料凸块、焊球、铜凸块、铜柱或类似的)，将热量从中介层30中导走，导向导热通孔22并且从而导向导电27。传导层27可以是由传导材料构成的大的连续的传导层，该传导层用作散热器和/或导热路径。
重新参考图1d，示出了说明性实施例的另一个有利特征。如所示，管芯37具有被示为W1的宽度。同样地，为了实现与管芯37的充分热接触，中介层30具有与W1大体上相等的宽度W2。然而，需要注意的是，在所示实施例中，中介层30具有比W1大的宽度W2。在一些实施例中，W2是W1的大约1.2倍至大约1.5倍。由此，中介层30提供了额外的作用，即，除了将热量从管芯37中导出以外还为所得到的封装件提供了机械硬度。可以相信，该机械硬度阻止或至少降低了由，例如，所得到的封装件的部件之间的热膨胀不匹配而导致的翘曲的严重程度。
将参考图2(包括图2a至图2e)论述第二实施例封装件。在此可以理解，在图1(包括图1a至图1e)和图2(包括图2a至图2e)中以通用参考标号来标记类似的或相似的元件。以图2a为开始，示出了将使用在PoP封装件中的顶部封装件1。可以通过与图1a中的顶部封装件1相同的工艺形成图2a中的顶部封装件1，并且图2a中的顶部封装件1可以包括与第一实施例中的封装件1相同的元件。
图2b示出了将散热器46接合至顶部封装件1。散热器46可以由导电材料(诸如，铝、铜钨、铜或锡)构成，但也可以由碳化硅或石墨构成。散热器46可以具有大约为500微米的厚度。散热器46通过传导层44与顶部封装件1的接地焊盘18电连接和/或热连接，该传导层可以是焊料或可以是其他导热材料，诸如，高导性黏合剂或热脂。
除了提供改进的导热性以外，散热器46还为所得到的封装件提供了机械固化。因此，散热器46提供了抗翘曲硬度和阻力，另外，该翘曲是由顶部封装件1和底部封装件34(图2d中示出)之间的热膨胀系数(CTE)不匹配导致的。
继续参考图2c，连接器元件36与顶部衬底10的底部接触件24相接合。如第一个实施例，连接器元件36使得顶部封装件1和底部封装件34(未示出，但图2d中示出)之间形成电连接和/或热连接。
如图2d所示，底部封装件34与顶部封装件1相接合。如第一个实施例，底部封装件34包括管芯37，该管芯37与下面的主板或其他电路(未示出)相接合。底部衬底38包括通孔40，该通孔与位于底部衬底38的一个面上的连接器元件39以及位于底部衬底38的其他面上的连接器元件42对准。顶部衬底10和下面的主板或其他电路之间的电连接由连接器元件36、通孔40以及连接器元件42来提供。
如第一实施例，图2d所示的封装件的有利特征在于，在管芯37(在底部封装件34中)和顶部封装件10中的导热层27(诸如，接地平面，图2e中示出)之间提供导热路径。如下面所述地提供该导热路径。与底部衬底38相连接的倒装芯片式管芯37具有与散热器46相接合的所谓的背面。如上所述，散热器46具有高导热性。可以将散热界面材料层48应用于管芯37。散热界面材料48可以包括焊膏、高导性黏合剂或热脂。通过这种方式，可以将热量从管芯37中导走并且导向与散热器46相接合的顶部衬底10。
图2e提供了散热器46和顶部衬底10的更详细的视图。如第一实施例，顶部衬底10可以是具有多个层(诸如，导电层27)的层压衬底，该多层中包括了介电层和导电层。在所示的实施例中，可以通过由箭头29所示的导热路径将热量从管芯37中导出。例如，可以从管芯37中通过散热界面材料48将热量导向散热器46。如上所述，散热器46提供了良好的导热性。从散热器46中将热量导出，通过传导层44导向导热通孔22并且由此导向传导层27。
重新参考图2d，示出了说明性实施例的另一个有利特征。如图所示，管芯37具有被示为W1的宽度。同样地，为了实现与管芯37的充分热接触，散热器46具有与W1大体上相等的宽度。然而，要注意的是，在所示实施例中，散热器46具有比W1大的宽度W2。W2是W1的大约1.2至大约1.5倍。通过这种方式，散热器46提供了额外的作用，即，除了将热量从管芯37中导出以外还为所得到的封装件提供了机械硬度。可以相信，该机械硬度阻止或至少降低了由，例如，所得到的封装件的部件之间的热膨胀不匹配而导致的翘曲的严重程度。
将参考图3(包括图3a至图3d)论述第三实施例封装件。在此可以理解，在图1(包括图1a至图1e)和图3(包括图3a至图3d)中以通用参考标号来标记类似的或相似的元件。以图3a为开始，示出了将使用在PoP封装件中的顶部封装件1。可以通过与第一个实施例中的顶部封装件1相同的工艺形成图3a中的顶部封装件1，并且图3a中的顶部封装件1可以包括与第一实施例中的封装件1相同的元件。
继续参考图3b，连接器元件36与顶部衬底10的底部接触件24相接合。如第一个实施例，连接器元件36使得顶部封装件1和底部封装件34(图3c中示出)之间形成电连接和/或热连接。
如图3c所示，底部封装件34与顶部封装件1相接合。如第一实施例，底部封装件34包括管芯37，该管芯37与下面的主板或其他电路(未示出)相接合。通过与位于底部衬底38的一个面上的连接器元件39以及位于底部衬底38的另一面上的连接器元件42对准的通孔40提供电连接。顶部衬底10和下面的主板或其他电路之间的电连接由连接器元件36、通孔40以及连接器元件42来提供。
如第一个实施例所述，图3c所示的封装件的有利特征在于，在管芯37(在底部封装件34中)和顶部封装件10中的导热层27(诸如，接地平面，图3d中示出)之间提供导热路径。该导热路径如下所述。管芯37通过倒装芯片的方式与底部衬底38相连接，并具有与散热界面材料48相连接的所谓的背面。该散热界面材料48具有高导热性。散热界面材料48可以包括焊膏、高导性黏合剂或热脂。散热界面材料48可以具有大约50微米至大约100微米的厚度。由此，可以将热量从管芯37向与散热界面材料48相连接的顶部衬底10导走。
图3d提供了散热界面材料48和顶部衬底10的更详细的视图。如第一实施例，顶部衬底10可以是具有多个层(诸如，传导层27)的层压衬底，该多层中包括了介电层和导电层。在所示的实施例中，可以通过由箭头29所示的导热路径将热量从管芯37中导走。例如，可以从管芯37中将热量导向散热界面材料48。如上所述，散热界面材料48提供了良好的导热性。通过导热通孔22将热量从散热界面材料48中导走并且由此导向传导层27。
尽管已经详细地描述了本发明及其优势，但应该理解，可以在不背离所附权利要求限定的本发明主旨和范围的情况下，做各种不同的改变，替换和更改。而且，本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员应理解，通过本发明，现有的或今后开发的用于执行与根据本发明所采用的所述相应实施例基本相同的功能或获得基本相同结果的工艺、机器、制造，材料组分、装置、方法或步骤根据本发明可以被使用。因此，所附权利要求应该包括在这样的工艺、机器、制造、材料组分、装置、方法或步骤的范围内。

Claims (16)

1.一种半导体器件，包括：
第一封装件，包括第一衬底和穿过所述第一衬底的通孔；
第一连接器元件，与所述第一衬底的所述通孔对准，并且与所述第一衬底的所述通孔相连接；
刚性热连接件，与所述第一连接器元件相连接；其中，所述刚性热连接件包括：半导体中介层，所述半导体中介层具有穿过其而形成的通孔；
管芯，与所述刚性热连接件相连接；
第二连接器元件，与所述管芯相连接；以及
底部衬底，与所述第二连接器元件相连接。
2.根据权利要求1所述的半导体器件，其中，所述中介层具有从100微米到300微米的厚度。
3.根据权利要求1所述的半导体器件，其中，所述中介层的所述通孔具有从0.1mm至0.3mm的间距。
4.根据权利要求1所述的半导体器件，其中，所述中介层的所述通孔具有从2至6的纵横比。
5.根据权利要求1所述的半导体器件，其中，所述刚性热连接件包括散热器。
6.根据权利要求1所述的半导体器件，其中，所述刚性热连接件具有宽度，并且所述管芯也具有宽度，其中，所述刚性热连接件的宽度是所述管芯的宽度的1.2倍至1.5倍。
7.一种封装件，包括：
第一封装件，具有形成在第一衬底上的第一管芯；
第二封装件，具有形成在第二衬底上的第二管芯；以及
刚性导热体，位于所述第一封装件和所述第二封装件之间，并且将所述第二管芯与所述第一衬底热连接，其中，所述导热体包括：中介层，所述中介层具有穿过其的通孔。
8.根据权利要求7所述的封装件，还包括：
第一组连接器元件，将所述第二管芯与所述第二衬底电连接；
第二组连接器元件，将所述第一管芯与所述第二衬底电连接；以及
第三组连接器元件，配置为将所述第二衬底与另一个电路电连接。
9.根据权利要求7所述的封装件，其中，所述第一衬底包括热传导层和导热通孔，所述封装件还包括：
第四组连接器元件，与所述导热通孔对准，并且将所述导热通孔与所述通孔相连接。
10.根据权利要求7所述的封装件，其中，所述第二管芯具有第一宽度，所述导热体具有大于所述第一宽度的第二宽度。
11.根据权利要求10所述的封装件，其中，所述第二宽度是所述第一宽度的1.2倍至1.5倍。
12.根据权利要求7所述的封装件，其中：
所述导热体包括与所述第二管芯热连接的散热器；
所述第一衬底包括热传导层和导热通孔；并且其中，
所述第二管芯通过所述导热通孔与所述热传导层热连接。
13.根据权利要求12所述的封装件，还包括：热界面材料，位于所述散热器和所述第一衬底之间。
14.一种形成封装件的方法，包括：
提供第一封装件，所述第一封装件包括位于第一衬底上的第一管芯，所述第一衬底中具有导热层；
提供第二封装件，所述第二封装件包括位于第二衬底上的第二管芯；以及
通过刚性导热体将所述第二管芯与所述第一衬底热连接，其中，所述刚性导热体具有穿过其的通孔。
15.根据权利要求14所述的方法，还包括：
在所述第一衬底中形成导热通孔；
在所述刚性导热体中形成所述通孔；以及
将所述导热通孔与所述通孔对准，并且利用连接器元件将所述导热通孔与所述通孔热连接。
16.根据权利要求14所述的方法，还包括：将所述第一管芯与所述第一衬底电连接，并且将所述第一衬底与所述第二衬底电连接。
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