CN103026495A - 电子器件用基板及包含该基板的光电转换器件 - Google Patents

电子器件用基板及包含该基板的光电转换器件 Download PDF

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Publication number
CN103026495A
CN103026495A CN2011800345637A CN201180034563A CN103026495A CN 103026495 A CN103026495 A CN 103026495A CN 2011800345637 A CN2011800345637 A CN 2011800345637A CN 201180034563 A CN201180034563 A CN 201180034563A CN 103026495 A CN103026495 A CN 103026495A
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CN
China
Prior art keywords
substrate
electrode layer
electronic device
layer
insulating barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800345637A
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English (en)
Chinese (zh)
Inventor
向井厚史
青野成彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of CN103026495A publication Critical patent/CN103026495A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
CN2011800345637A 2010-07-14 2011-07-12 电子器件用基板及包含该基板的光电转换器件 Pending CN103026495A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-159517 2010-07-14
JP2010159517A JP2012023180A (ja) 2010-07-14 2010-07-14 電子デバイス用基板および該基板を備えた光電変換装置
PCT/JP2011/003991 WO2012008149A1 (ja) 2010-07-14 2011-07-12 電子デバイス用基板および該基板を備えた光電変換装置

Publications (1)

Publication Number Publication Date
CN103026495A true CN103026495A (zh) 2013-04-03

Family

ID=45469165

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800345637A Pending CN103026495A (zh) 2010-07-14 2011-07-12 电子器件用基板及包含该基板的光电转换器件

Country Status (5)

Country Link
US (1) US20130118578A1 (https=)
JP (1) JP2012023180A (https=)
KR (1) KR20130100984A (https=)
CN (1) CN103026495A (https=)
WO (1) WO2012008149A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103883907A (zh) * 2014-03-14 2014-06-25 苏州晶品光电科技有限公司 大功率led照明组件

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014229736A (ja) * 2013-05-22 2014-12-08 富士フイルム株式会社 太陽電池
JP2020141123A (ja) * 2019-02-27 2020-09-03 Toto株式会社 半導体製造装置用部材および半導体製造装置用部材を備えた半導体製造装置並びにディスプレイ製造装置
JP7564025B2 (ja) * 2021-03-12 2024-10-08 日本特殊陶業株式会社 配線基板
JP7564024B2 (ja) * 2021-03-12 2024-10-08 日本特殊陶業株式会社 配線基板

Citations (7)

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JPS6289369A (ja) * 1985-10-16 1987-04-23 Matsushita Electric Ind Co Ltd 光起電力装置
JP2002353481A (ja) * 2001-05-30 2002-12-06 Canon Inc 光起電力素子及びその製造方法
CN101002335A (zh) * 2004-08-09 2007-07-18 昭和砚壳石油株式会社 Cis化合物半导体薄膜太阳能电池以及形成该太阳能电池的光吸收层的方法
JP2008294264A (ja) * 2007-05-25 2008-12-04 Kaneka Corp 透光性薄膜太陽電池の製造方法及び、透光性薄膜太陽電池。
US20090077805A1 (en) * 2007-08-31 2009-03-26 Applied Materials, Inc. Photovoltaic production line
CN101529602A (zh) * 2006-10-27 2009-09-09 夏普株式会社 薄膜太阳能电池和薄膜太阳能电池的制造方法
EP2197037A1 (en) * 2007-09-28 2010-06-16 Fujifilm Corporation Substrate for solar cell and solar cell

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JPS56169794A (en) * 1980-05-31 1981-12-26 Anritsu Corp Production of name plate
DE3212181A1 (de) * 1982-04-01 1983-10-06 Nisshin Steel Co Ltd Stahltraeger fuer eine flachdruckplatte, sowie verfahren zur herstellung
JPS61133676A (ja) * 1984-12-03 1986-06-20 Showa Alum Corp ａ−Ｓｉ太陽電池用基板
JPS6249673A (ja) * 1985-08-29 1987-03-04 Matsushita Electric Ind Co Ltd 光起電力装置
JPH0815223B2 (ja) * 1987-04-20 1996-02-14 三洋電機株式会社 光起電力装置の製造方法
JP2002353487A (ja) * 2001-05-25 2002-12-06 Canon Inc 太陽電池モジュール及び該モジュールの製造方法
US7053294B2 (en) * 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
JP2006205557A (ja) * 2005-01-28 2006-08-10 Fuji Photo Film Co Ltd 平版印刷版用支持体
JP2009206279A (ja) * 2008-02-27 2009-09-10 Sharp Corp 薄膜太陽電池およびその製造方法
US20100028533A1 (en) * 2008-03-04 2010-02-04 Brent Bollman Methods and Devices for Processing a Precursor Layer in a Group VIA Environment
JP2010118694A (ja) * 2010-02-22 2010-05-27 Sharp Corp 薄膜太陽電池および薄膜太陽電池の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289369A (ja) * 1985-10-16 1987-04-23 Matsushita Electric Ind Co Ltd 光起電力装置
JP2002353481A (ja) * 2001-05-30 2002-12-06 Canon Inc 光起電力素子及びその製造方法
CN101002335A (zh) * 2004-08-09 2007-07-18 昭和砚壳石油株式会社 Cis化合物半导体薄膜太阳能电池以及形成该太阳能电池的光吸收层的方法
CN101529602A (zh) * 2006-10-27 2009-09-09 夏普株式会社 薄膜太阳能电池和薄膜太阳能电池的制造方法
JP2008294264A (ja) * 2007-05-25 2008-12-04 Kaneka Corp 透光性薄膜太陽電池の製造方法及び、透光性薄膜太陽電池。
US20090077805A1 (en) * 2007-08-31 2009-03-26 Applied Materials, Inc. Photovoltaic production line
EP2197037A1 (en) * 2007-09-28 2010-06-16 Fujifilm Corporation Substrate for solar cell and solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103883907A (zh) * 2014-03-14 2014-06-25 苏州晶品光电科技有限公司 大功率led照明组件

Also Published As

Publication number Publication date
US20130118578A1 (en) 2013-05-16
JP2012023180A (ja) 2012-02-02
WO2012008149A1 (ja) 2012-01-19
KR20130100984A (ko) 2013-09-12

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Application publication date: 20130403