CN103026204B - 用于自动确定最优参数化的散射测量模型的方法 - Google Patents
用于自动确定最优参数化的散射测量模型的方法 Download PDFInfo
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- CN103026204B CN103026204B CN201180032548.9A CN201180032548A CN103026204B CN 103026204 B CN103026204 B CN 103026204B CN 201180032548 A CN201180032548 A CN 201180032548A CN 103026204 B CN103026204 B CN 103026204B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/841,932 US8666703B2 (en) | 2010-07-22 | 2010-07-22 | Method for automated determination of an optimally parameterized scatterometry model |
US12/841,932 | 2010-07-22 | ||
PCT/US2011/044394 WO2012012345A2 (en) | 2010-07-22 | 2011-07-18 | Method for automated determination of an optimally parameterized scatterometry model |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103026204A CN103026204A (zh) | 2013-04-03 |
CN103026204B true CN103026204B (zh) | 2015-08-19 |
Family
ID=45494292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180032548.9A Active CN103026204B (zh) | 2010-07-22 | 2011-07-18 | 用于自动确定最优参数化的散射测量模型的方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8666703B2 (zh) |
EP (1) | EP2596334A2 (zh) |
JP (1) | JP2013539532A (zh) |
KR (1) | KR20130118755A (zh) |
CN (1) | CN103026204B (zh) |
TW (1) | TWI509431B (zh) |
WO (1) | WO2012012345A2 (zh) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8381140B2 (en) * | 2011-02-11 | 2013-02-19 | Tokyo Electron Limited | Wide process range library for metrology |
US10255385B2 (en) | 2012-03-28 | 2019-04-09 | Kla-Tencor Corporation | Model optimization approach based on spectral sensitivity |
US10354929B2 (en) * | 2012-05-08 | 2019-07-16 | Kla-Tencor Corporation | Measurement recipe optimization based on spectral sensitivity and process variation |
US10013518B2 (en) | 2012-07-10 | 2018-07-03 | Kla-Tencor Corporation | Model building and analysis engine for combined X-ray and optical metrology |
US10101670B2 (en) * | 2013-03-27 | 2018-10-16 | Kla-Tencor Corporation | Statistical model-based metrology |
US9857291B2 (en) * | 2013-05-16 | 2018-01-02 | Kla-Tencor Corporation | Metrology system calibration refinement |
US9255877B2 (en) * | 2013-05-21 | 2016-02-09 | Kla-Tencor Corporation | Metrology system optimization for parameter tracking |
US10386729B2 (en) * | 2013-06-03 | 2019-08-20 | Kla-Tencor Corporation | Dynamic removal of correlation of highly correlated parameters for optical metrology |
US9412673B2 (en) * | 2013-08-23 | 2016-08-09 | Kla-Tencor Corporation | Multi-model metrology |
TWI492010B (zh) * | 2013-10-23 | 2015-07-11 | Nat Univ Tsing Hua | Used in the factory to carry out the manufacturing method of verification |
US10895810B2 (en) * | 2013-11-15 | 2021-01-19 | Kla Corporation | Automatic selection of sample values for optical metrology |
CN105335600B (zh) * | 2014-08-08 | 2018-04-10 | 中国科学技术大学 | 一种获得地层中聚合物溶液剪切变稀特性的方法及系统 |
CN105571483B (zh) * | 2014-10-14 | 2018-06-26 | 睿励科学仪器(上海)有限公司 | 一种用于优化光学系统参数的方法和装置 |
KR102269514B1 (ko) | 2014-11-25 | 2021-06-25 | 케이엘에이 코포레이션 | 랜드스케이프의 분석 및 활용 |
US9995689B2 (en) * | 2015-05-22 | 2018-06-12 | Nanometrics Incorporated | Optical metrology using differential fitting |
US10502692B2 (en) | 2015-07-24 | 2019-12-10 | Kla-Tencor Corporation | Automated metrology system selection |
CN105550746B (zh) * | 2015-12-08 | 2018-02-02 | 北京旷视科技有限公司 | 机器学习模型的训练方法和训练装置 |
US20200025554A1 (en) * | 2015-12-08 | 2020-01-23 | Kla-Tencor Corporation | System, method and computer program product for fast automatic determination of signals for efficient metrology |
US11580375B2 (en) * | 2015-12-31 | 2023-02-14 | Kla-Tencor Corp. | Accelerated training of a machine learning based model for semiconductor applications |
TWI780741B (zh) * | 2016-02-24 | 2022-10-11 | 美商克萊譚克公司 | 光學計量之準確度提升 |
WO2017146785A1 (en) | 2016-02-25 | 2017-08-31 | Kla-Tencor Corporation | Analyzing root causes of process variation in scatterometry metrology |
US10197908B2 (en) | 2016-06-21 | 2019-02-05 | Lam Research Corporation | Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework |
CN106485316B (zh) * | 2016-10-31 | 2019-04-02 | 北京百度网讯科技有限公司 | 神经网络模型压缩方法以及装置 |
WO2018105029A1 (ja) * | 2016-12-06 | 2018-06-14 | 三菱電機株式会社 | ブリッジ装置及び設備ネットワーク |
US11537837B2 (en) * | 2017-02-13 | 2022-12-27 | Kla-Tencor Corporation | Automated accuracy-oriented model optimization system for critical dimension metrology |
US10732516B2 (en) * | 2017-03-01 | 2020-08-04 | Kla Tencor Corporation | Process robust overlay metrology based on optical scatterometry |
KR102132785B1 (ko) * | 2017-08-31 | 2020-07-13 | 가부시끼가이샤 히다치 세이사꾸쇼 | 계산기, 처리의 제어 파라미터의 결정 방법, 대용 시료, 계측 시스템, 및 계측 방법 |
US11380594B2 (en) | 2017-11-15 | 2022-07-05 | Kla-Tencor Corporation | Automatic optimization of measurement accuracy through advanced machine learning techniques |
ES2719504A1 (es) | 2018-01-08 | 2019-07-10 | Bsh Electrodomesticos Espana Sa | Procedimiento para activar un campo de cocción, campo de cocción fabricado para utilizar este procedimiento |
US10572697B2 (en) | 2018-04-06 | 2020-02-25 | Lam Research Corporation | Method of etch model calibration using optical scatterometry |
WO2019195481A1 (en) * | 2018-04-06 | 2019-10-10 | Lam Research Corporation | Process simulation model calibration using cd-sem |
WO2019199697A1 (en) | 2018-04-10 | 2019-10-17 | Lam Research Corporation | Resist and etch modeling |
US11921433B2 (en) | 2018-04-10 | 2024-03-05 | Lam Research Corporation | Optical metrology in machine learning to characterize features |
KR102611986B1 (ko) | 2018-12-19 | 2023-12-08 | 삼성전자주식회사 | 반도체 소자의 형상 예측 방법 |
US10977405B2 (en) | 2019-01-29 | 2021-04-13 | Lam Research Corporation | Fill process optimization using feature scale modeling |
JP7108562B2 (ja) * | 2019-02-22 | 2022-07-28 | 株式会社日立製作所 | 処理の制御パラメータの決定方法、及び計測システム |
TWI697851B (zh) * | 2019-05-03 | 2020-07-01 | 宏碁股份有限公司 | 電子裝置與模型更新方法 |
KR102407877B1 (ko) * | 2020-02-13 | 2022-06-10 | 인하대학교 산학협력단 | 차량 탑재 능동형 센서를 이용하여 노면의 상태를 검출하기 위한 전자 장치 및 그의 동작 방법 |
CN111679089B (zh) * | 2020-08-13 | 2020-11-06 | 武汉生之源生物科技股份有限公司 | 一种检测设备的数据处理方法 |
CN113175904B (zh) * | 2021-04-13 | 2022-10-25 | 西安交通大学 | 一种基于旋量模型的键槽特征公差建模方法及系统 |
TWI820680B (zh) * | 2021-05-05 | 2023-11-01 | 美商昂圖創新公司 | 用於模型化邏輯結構之有效單元近似的方法和裝置 |
CN113452562B (zh) * | 2021-06-28 | 2022-07-12 | 中国建设银行股份有限公司 | 一种配置参数校准方法及装置 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001090434A2 (en) * | 2000-05-24 | 2001-11-29 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
US6754569B2 (en) * | 2001-05-24 | 2004-06-22 | Simmonds Precision Products, Inc. | Method and apparatus for normalizing condition indicators |
JP3937149B2 (ja) | 2002-04-12 | 2007-06-27 | 株式会社堀場製作所 | 分光エリプソメータを用いた極薄膜2層構造の解析方法 |
EP1435517B1 (en) * | 2001-09-06 | 2011-06-15 | Horiba, Ltd. | Method for analyzing thin-film layer structure using spectroscopic ellipsometer |
US6853942B2 (en) * | 2002-03-26 | 2005-02-08 | Timbre Technologies, Inc. | Metrology hardware adaptation with universal library |
US6721691B2 (en) * | 2002-03-26 | 2004-04-13 | Timbre Technologies, Inc. | Metrology hardware specification using a hardware simulator |
US7330279B2 (en) * | 2002-07-25 | 2008-02-12 | Timbre Technologies, Inc. | Model and parameter selection for optical metrology |
US6842261B2 (en) * | 2002-08-26 | 2005-01-11 | Timbre Technologies, Inc. | Integrated circuit profile value determination |
US6990743B2 (en) * | 2002-08-29 | 2006-01-31 | Micron Technology, Inc. | Process for monitoring measuring device performance |
US7126700B2 (en) * | 2003-12-12 | 2006-10-24 | Timbre Technologies, Inc. | Parametric optimization of optical metrology model |
US7065423B2 (en) * | 2004-07-08 | 2006-06-20 | Timbre Technologies, Inc. | Optical metrology model optimization for process control |
US7480891B2 (en) * | 2005-04-29 | 2009-01-20 | Cadence Design Systems, Inc. | Method and apparatus of model-based photomask synthesis |
US7743358B2 (en) * | 2005-04-29 | 2010-06-22 | Cadence Design Systems, Inc. | Apparatus and method for segmenting edges for optical proximity correction |
US8165854B1 (en) * | 2006-01-11 | 2012-04-24 | Olambda, Inc. | Computer simulation of photolithographic processing |
WO2007133755A2 (en) * | 2006-05-15 | 2007-11-22 | Rudolph Technologies, Inc. | Structure model description and use for scatterometry-based semiconductor manufacturing process metrology |
GB0609744D0 (en) * | 2006-05-16 | 2006-06-28 | Oxford Instr Analytical Ltd | Method of determining the feasibility of a proposed x-ray structure analysis process |
US8294907B2 (en) * | 2006-10-13 | 2012-10-23 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
KR101357326B1 (ko) | 2007-07-26 | 2014-02-03 | 도쿄엘렉트론가부시키가이샤 | 패턴화 구조 검사 시스템 |
NL1036018A1 (nl) | 2007-10-09 | 2009-04-15 | Asml Netherlands Bv | A method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus. |
US7710565B2 (en) * | 2007-12-14 | 2010-05-04 | Tokyo Electron Limited | Method of correcting systematic error in a metrology system |
NL1036468A1 (nl) * | 2008-02-27 | 2009-08-31 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
US7602509B1 (en) | 2008-03-18 | 2009-10-13 | Kla-Tencor Corporation | Method for selecting optical configuration for high-precision scatterometric measurement |
CA2721008A1 (en) * | 2008-04-11 | 2009-10-15 | Terraspark Geosciences, Llc | Visulation of geologic features using data representations thereof |
US8108328B2 (en) * | 2008-07-17 | 2012-01-31 | Tokyo Electron Limited | Neural network based hermite interpolator for scatterometry parameter estimation |
US8239786B2 (en) * | 2008-12-30 | 2012-08-07 | Asml Netherlands B.V. | Local multivariable solver for optical proximity correction in lithographic processing method, and device manufactured thereby |
TWI407114B (zh) * | 2009-05-15 | 2013-09-01 | Univ Ishou | Signal analysis device and computer program products |
NL2006322A (en) * | 2010-03-18 | 2011-09-20 | Asml Netherlands Bv | Inspection apparatus and associated method and monitoring and control system. |
US8452718B2 (en) * | 2010-06-10 | 2013-05-28 | Tokyo Electron Limited | Determination of training set size for a machine learning system |
US10255385B2 (en) * | 2012-03-28 | 2019-04-09 | Kla-Tencor Corporation | Model optimization approach based on spectral sensitivity |
-
2010
- 2010-07-22 US US12/841,932 patent/US8666703B2/en active Active
-
2011
- 2011-07-18 CN CN201180032548.9A patent/CN103026204B/zh active Active
- 2011-07-18 WO PCT/US2011/044394 patent/WO2012012345A2/en active Application Filing
- 2011-07-18 EP EP11810230.0A patent/EP2596334A2/en not_active Withdrawn
- 2011-07-18 JP JP2013520784A patent/JP2013539532A/ja active Pending
- 2011-07-18 KR KR1020127034413A patent/KR20130118755A/ko not_active Application Discontinuation
- 2011-07-21 TW TW100125861A patent/TWI509431B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI509431B (zh) | 2015-11-21 |
US8666703B2 (en) | 2014-03-04 |
WO2012012345A2 (en) | 2012-01-26 |
CN103026204A (zh) | 2013-04-03 |
WO2012012345A3 (en) | 2012-04-26 |
EP2596334A2 (en) | 2013-05-29 |
TW201211789A (en) | 2012-03-16 |
KR20130118755A (ko) | 2013-10-30 |
JP2013539532A (ja) | 2013-10-24 |
US20120022836A1 (en) | 2012-01-26 |
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