CN103022044A - 一种具有选择器晶体管的p+单一多晶架构的嵌入式非挥发性记忆体及其制备方法 - Google Patents
一种具有选择器晶体管的p+单一多晶架构的嵌入式非挥发性记忆体及其制备方法 Download PDFInfo
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- CN103022044A CN103022044A CN2012105800038A CN201210580003A CN103022044A CN 103022044 A CN103022044 A CN 103022044A CN 2012105800038 A CN2012105800038 A CN 2012105800038A CN 201210580003 A CN201210580003 A CN 201210580003A CN 103022044 A CN103022044 A CN 103022044A
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103178069A (zh) * | 2013-04-02 | 2013-06-26 | 无锡来燕微电子有限公司 | 一种低成本的单一多晶架构的非挥发性记忆体及其制备方法 |
CN106158614A (zh) * | 2015-04-20 | 2016-11-23 | 北大方正集团有限公司 | 半导体器件的制备方法 |
CN110931068A (zh) * | 2018-09-19 | 2020-03-27 | 力旺电子股份有限公司 | 非挥发性存储器单元以及非挥发性存储器阵列 |
Citations (7)
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US20040196698A1 (en) * | 2003-04-03 | 2004-10-07 | Ching-Hsiang Hsu | Semiconductor memory device having improved data retention |
CN1615547A (zh) * | 2002-01-15 | 2005-05-11 | 因芬尼昂技术股份公司 | 非易失双晶体管半导体存储单元及其制造方法 |
CN1624904A (zh) * | 2003-12-01 | 2005-06-08 | 联华电子股份有限公司 | 一种非挥发性记忆体及其运作方法 |
US20050199936A1 (en) * | 2004-03-05 | 2005-09-15 | Alex Wang | Nonvolatile memory solution using single-poly pflash technology |
CN1934705A (zh) * | 2004-12-24 | 2007-03-21 | 株式会社理光 | 半导体装置 |
CN102544122A (zh) * | 2012-02-21 | 2012-07-04 | 无锡来燕微电子有限公司 | 一种具有p+单一多晶架构的非挥发性记忆体及其制备方法 |
CN203118949U (zh) * | 2012-12-28 | 2013-08-07 | 无锡来燕微电子有限公司 | 一种p+单一多晶架构非挥发性记忆体 |
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2012
- 2012-12-28 CN CN201210580003.8A patent/CN103022044B/zh active Active
Patent Citations (7)
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CN1615547A (zh) * | 2002-01-15 | 2005-05-11 | 因芬尼昂技术股份公司 | 非易失双晶体管半导体存储单元及其制造方法 |
US20040196698A1 (en) * | 2003-04-03 | 2004-10-07 | Ching-Hsiang Hsu | Semiconductor memory device having improved data retention |
CN1624904A (zh) * | 2003-12-01 | 2005-06-08 | 联华电子股份有限公司 | 一种非挥发性记忆体及其运作方法 |
US20050199936A1 (en) * | 2004-03-05 | 2005-09-15 | Alex Wang | Nonvolatile memory solution using single-poly pflash technology |
CN1934705A (zh) * | 2004-12-24 | 2007-03-21 | 株式会社理光 | 半导体装置 |
CN102544122A (zh) * | 2012-02-21 | 2012-07-04 | 无锡来燕微电子有限公司 | 一种具有p+单一多晶架构的非挥发性记忆体及其制备方法 |
CN203118949U (zh) * | 2012-12-28 | 2013-08-07 | 无锡来燕微电子有限公司 | 一种p+单一多晶架构非挥发性记忆体 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103178069A (zh) * | 2013-04-02 | 2013-06-26 | 无锡来燕微电子有限公司 | 一种低成本的单一多晶架构的非挥发性记忆体及其制备方法 |
CN106158614A (zh) * | 2015-04-20 | 2016-11-23 | 北大方正集团有限公司 | 半导体器件的制备方法 |
CN106158614B (zh) * | 2015-04-20 | 2019-06-14 | 北大方正集团有限公司 | 半导体器件的制备方法 |
CN110931068A (zh) * | 2018-09-19 | 2020-03-27 | 力旺电子股份有限公司 | 非挥发性存储器单元以及非挥发性存储器阵列 |
CN110931068B (zh) * | 2018-09-19 | 2021-12-07 | 力旺电子股份有限公司 | 非挥发性存储器单元以及非挥发性存储器阵列 |
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Address after: 214000 4th floor, dolphin Block C, Wuxi Software Park, No. 111, Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province Patentee after: Wuxi Chixiang Innovation Technology Co., Ltd. Address before: 214000 4 / F, dolphin C, Wuxi Software Park, No.111, software Avenue, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Wuxi Chixiang Innovation Technology Co., Ltd. |