CN103021779B - 等离子体反应器 - Google Patents
等离子体反应器 Download PDFInfo
- Publication number
- CN103021779B CN103021779B CN201210392266.6A CN201210392266A CN103021779B CN 103021779 B CN103021779 B CN 103021779B CN 201210392266 A CN201210392266 A CN 201210392266A CN 103021779 B CN103021779 B CN 103021779B
- Authority
- CN
- China
- Prior art keywords
- gas
- plasma
- reactor
- inlet
- stream
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 238000010926 purge Methods 0.000 claims description 22
- 239000000376 reactant Substances 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 7
- 238000009825 accumulation Methods 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 claims 25
- 210000004027 cell Anatomy 0.000 claims 4
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 238000002156 mixing Methods 0.000 abstract description 5
- 238000007493 shaping process Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 205
- 238000000034 method Methods 0.000 description 30
- 239000013618 particulate matter Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910004014 SiF4 Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- -1 and steam Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- AEXLPFBSDYGMFP-UHFFFAOYSA-N nitrous oxide Chemical compound [O-][N+]#N.[O-][N+]#N AEXLPFBSDYGMFP-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/10—Treatment of gases
- H05H2245/17—Exhaust gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Treating Waste Gases (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0714025.4 | 2007-07-19 | ||
| GBGB0714025.4A GB0714025D0 (en) | 2007-07-19 | 2007-07-19 | Plasma reactor |
| CN200880025328.1A CN101755322B (zh) | 2007-07-19 | 2008-07-14 | 等离子体反应器 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880025328.1A Division CN101755322B (zh) | 2007-07-19 | 2008-07-14 | 等离子体反应器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103021779A CN103021779A (zh) | 2013-04-03 |
| CN103021779B true CN103021779B (zh) | 2016-08-10 |
Family
ID=38476563
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880025328.1A Expired - Fee Related CN101755322B (zh) | 2007-07-19 | 2008-07-14 | 等离子体反应器 |
| CN201210392266.6A Expired - Fee Related CN103021779B (zh) | 2007-07-19 | 2008-07-14 | 等离子体反应器 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880025328.1A Expired - Fee Related CN101755322B (zh) | 2007-07-19 | 2008-07-14 | 等离子体反应器 |
Country Status (6)
| Country | Link |
|---|---|
| KR (1) | KR101490540B1 (fr) |
| CN (2) | CN101755322B (fr) |
| DE (1) | DE112008001790T5 (fr) |
| GB (1) | GB0714025D0 (fr) |
| TW (1) | TWI433718B (fr) |
| WO (1) | WO2009010792A2 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102125818B (zh) * | 2010-12-31 | 2013-12-11 | 武汉凯迪工程技术研究总院有限公司 | 用等离子体制取高温、富含活性粒子水蒸汽的方法及装置 |
| GB2493752A (en) * | 2011-08-17 | 2013-02-20 | Edwards Ltd | Apparatus for treating a gas stream |
| US9240308B2 (en) * | 2014-03-06 | 2016-01-19 | Applied Materials, Inc. | Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system |
| GB2534890A (en) * | 2015-02-03 | 2016-08-10 | Edwards Ltd | Thermal plasma torch |
| GB2536905B (en) * | 2015-03-30 | 2020-01-08 | Edwards Ltd | Radiant burner |
| CN113371679A (zh) * | 2021-05-27 | 2021-09-10 | 中国矿业大学 | 一种二氧化碳-甲烷等离子高温重整装置及高温重整方法 |
| GB2625846A (en) * | 2022-12-27 | 2024-07-03 | Csk Inc | Scrubber burner |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW442842B (en) * | 1996-12-31 | 2001-06-23 | Atmi Ecosys Corp | Effluent gas stream treatment system for oxidation treatment of semiconductor manufacturing effluent gases |
| US6617538B1 (en) * | 2000-03-31 | 2003-09-09 | Imad Mahawili | Rotating arc plasma jet and method of use for chemical synthesis and chemical by-products abatements |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5846275A (en) * | 1996-12-31 | 1998-12-08 | Atmi Ecosys Corporation | Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
| JP2005205330A (ja) | 2004-01-23 | 2005-08-04 | Kanken Techno Co Ltd | パーフルオロコンパウンド排ガスのプラズマ分解処理方法および該方法を利用したプラズマ分解処理装置並びにこのプラズマ分解処理装置を搭載した排ガス処理システム |
| GB0416385D0 (en) * | 2004-07-22 | 2004-08-25 | Boc Group Plc | Gas abatement |
| GB0502495D0 (en) * | 2005-02-07 | 2005-03-16 | Boc Group Plc | Ejector pump |
-
2007
- 2007-07-19 GB GBGB0714025.4A patent/GB0714025D0/en not_active Ceased
-
2008
- 2008-07-14 KR KR1020107001116A patent/KR101490540B1/ko active IP Right Grant
- 2008-07-14 CN CN200880025328.1A patent/CN101755322B/zh not_active Expired - Fee Related
- 2008-07-14 DE DE112008001790T patent/DE112008001790T5/de not_active Ceased
- 2008-07-14 WO PCT/GB2008/050569 patent/WO2009010792A2/fr active Application Filing
- 2008-07-14 CN CN201210392266.6A patent/CN103021779B/zh not_active Expired - Fee Related
- 2008-07-18 TW TW097127521A patent/TWI433718B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW442842B (en) * | 1996-12-31 | 2001-06-23 | Atmi Ecosys Corp | Effluent gas stream treatment system for oxidation treatment of semiconductor manufacturing effluent gases |
| US6617538B1 (en) * | 2000-03-31 | 2003-09-09 | Imad Mahawili | Rotating arc plasma jet and method of use for chemical synthesis and chemical by-products abatements |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103021779A (zh) | 2013-04-03 |
| TWI433718B (zh) | 2014-04-11 |
| CN101755322B (zh) | 2014-02-19 |
| GB0714025D0 (en) | 2007-08-29 |
| KR101490540B1 (ko) | 2015-02-05 |
| CN101755322A (zh) | 2010-06-23 |
| TW200914124A (en) | 2009-04-01 |
| WO2009010792A3 (fr) | 2009-03-12 |
| DE112008001790T5 (de) | 2010-04-29 |
| WO2009010792A2 (fr) | 2009-01-22 |
| KR20100037609A (ko) | 2010-04-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160810 |