CN103021779B - Plasma reactor - Google Patents
Plasma reactor Download PDFInfo
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- CN103021779B CN103021779B CN201210392266.6A CN201210392266A CN103021779B CN 103021779 B CN103021779 B CN 103021779B CN 201210392266 A CN201210392266 A CN 201210392266A CN 103021779 B CN103021779 B CN 103021779B
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- 238000006243 chemical reaction Methods 0.000 claims description 22
- 238000010926 purge Methods 0.000 claims description 22
- 239000000376 reactant Substances 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 7
- 238000009825 accumulation Methods 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 claims 25
- 210000004027 cell Anatomy 0.000 claims 4
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 238000002156 mixing Methods 0.000 abstract description 5
- 238000007493 shaping process Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 205
- 238000000034 method Methods 0.000 description 30
- 239000013618 particulate matter Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910004014 SiF4 Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- -1 and steam Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- AEXLPFBSDYGMFP-UHFFFAOYSA-N nitrous oxide Chemical compound [O-][N+]#N.[O-][N+]#N AEXLPFBSDYGMFP-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/10—Treatment of gases
- H05H2245/17—Exhaust gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Treating Waste Gases (AREA)
- Plasma Technology (AREA)
Abstract
Plasma reactor includes reative cell and is connected to the inlet head of reative cell.Inlet head includes the opening being connected to reative cell, is positioned at the plasma inlet relative with opening, the inner surface tapered into plasma inlet from opening, and the first and second gas accesses being each located between plasma inlet and opening.Plasma stream is injected in reative cell by plasmatorch by plasma inlet, and described plasma inlet is so shaped that plasma stream outwards spreads towards the first and second gas accesses.This shaping of inlet head and plasma inlet enables to plasma stream and can strike on gas stream, when they leave from gas access, and at least one component of significant percentage of gas stream is thus caused to start to react before the mixing of indoor at gas stream.
Description
The application is application number 200880025328.1, filing date July 14 in 2008 day,
It is referred to as the divisional application of the application for a patent for invention of " plasma reactor ".
The present invention relates to plasma reactor.Described device can be used in particular for plasma and eliminate
(abatement) system, for processing expellant gas logistics from process chamber.
Manufacture having main steps that of semiconductor equipment partly led by the chemical reaction of vapor precursor
Thin film is formed on structure base board.A kind of known technology depositing thin film on substrate is chemical gaseous phase
Deposition (CVD).In this technology, process gas is supplied to lay the process chamber of substrate,
And react and form thin film on the surface of the substrate.It is supplied to process chamber and forms the gas of thin film
Example include, but are not limited to:
Silane and ammonia, be used for forming silicon nitride film；
Silane, ammonia and nitrous oxide (nitrous oxide), be used for forming SiON thin film；
TEOS and one of oxygen and ozone, be used for forming silicon oxide film；With
·Al(CH3)3And steam, it is used for forming aluminum oxide film.
Plasma etch process is generally also carried out with etched circuit feature in process chamber.Etching
Gas is usually perfluorochemical (perfluorocompound) gas such as CF4、C2F6、CHF3、
NF3And SF6。
The inner surface of process chamber is carried out the most termly and removes unwanted from described room
Deposition material.A kind of method cleaning described room is to provide perfluorocompound cleaning gas, as
NF3Or C2F6, in order to react with unwanted deposition material.
Process tool is generally of multiple process chamber, each can be in deposition, etching or cleaning
Corresponding different phase.Surplus is typically comprised from the composition of process chamber expellant gas logistics
The gas being supplied to process chamber and from the by-product of technique.Therefore, during processing,
Various different group can be had by the waste stream formed from the combination of each room expellant gas
Become.
Process gas such as silane and TEOS, and purge gas such as perfluorochemical is abnormally dangerous
, if being discharged to air, and therefore, before discharge gas is discharged into air,
They are sent to cancellation element.More dangerous component in discharge gas is changed into by cancellation element can
Easily scrub the material of removing by routine and/or the material of air can be safely exhausted to.
Current trends be towards without fuel technology for eliminating develop, and it is well known that use etc. from
Daughter abatement apparatus, can at the less desirable material discharged in gas from etch process chamber
It is removed expeditiously and at lower cost.In plasma eliminates technique so that gas thing
Stream flow into high-density plasma and under intensified condition the plasma substrate in gas stream
Matter stands the shock of high energy electron so that resolve into reactive materials, and it can be with oxygen or hydrogen
Depressed conjunction and produce metastable by-product.Such as, C2F6CO, CO can be converted into2
And HF, it can be removed in other processes step.Therefore extension etc. it is desirable to
Gas ions technology for eliminating is so as to make the single abatement apparatus without fuel for processing from one
Determine the discharge gas of the process chamber of scope.
But, the technique depending on carrying out in each room, different discharge gas may comprise that
This incompatible chemical substance.Such as, from the row of the room wherein carrying out silicon oxide deposition technique
Go out gas and may comprise TEOS, oxygen and SiO2Particulate matter (it produces in the chamber).Separately
On the one hand, from wherein carrying out NF3The discharge gas of the room of cleaning may comprise fluorine gas
(F2).TEOS spontaneously will burn when contacting with fluorine gas, and this is discharging gas pipeline potentially
System causes fire or blast.Although these gas streams can use corresponding cancellation element
Process respectively, but which increase the cost relevant with elimination system.
Additionally, for the destruction efficiency optimizing microwave plasma abatement apparatus, gas access allusion quotation
It it is about 1 square millimeter type.Therefore, discharge a diameter of only a few micrometers in gas
The existence of grain thing may cause the rapid occlusion of the entrance of plasma abatement apparatus.
The target of at least preferred embodiment of the present invention is to manage to solve these and other to ask
Topic.
In the first aspect, the invention provides plasma reactor, comprising:
Reative cell；
Inlet head, it has the opening being connected to reative cell, is positioned at relative with opening etc.
Gas ions entrance, the inner surface tapered into plasma inlet from opening, and each self-alignment
The first and second gas accesses between plasma inlet and opening；With
For plasma stream being injected by plasma inlet the plasmatorch of reative cell；
Wherein, plasma inlet be so shaped that plasma stream towards gas access to
Outer distribution (spread outwardly).
It is permissible that this shaping of inlet head and plasma inlet enables to plasma stream
Strike on gas stream, when gas stream leaves from gas access.Plasma stream energy
Enough providing energy source, it can cause at least one component of significant percentage of gas stream to exist
Gas stream starts to react before the mixing of indoor.
Such as, if a kind of component of gas stream is flammable and with q.s oxidation
Agent is transported in reactor together, plasma stream can in reactor gas stream with
Other gas stream mixing premise for for cause this combustible components substantially completely, be subject to
The ignition energy of control burning.This may suppression a kind of gas stream combustible components such as
Sending out in plasma reactor between the component of TEOS and other gas stream such as fluorine gas
Raw uncontrolled reaction.This component of other gas streams can be with reactant such as steam
(that be provided independently to reative cell or previously carried secretly in gas stream) reaction, its medium from
Daughter logistics provides the energy source promoting this reaction.
As a result, plasma reactor may be used for the power consumption to reduce and cost is located simultaneously
Manage from two process chamber expellant gas logistics, compared to include for each gas stream etc. from
For the elimination system of daughter reactor.
For producing the high-temperature reactor that wherein technique powder can not be assembled, reative cell preferably includes ring
Shape main body and the inner surface to circumferential body provide the device (means) of gas so that suppression deposits
Thing accumulation thereon.This feature can be in the plasma reaction without above-mentioned inlet head
Device provides, and therefore in second aspect, the invention provides plasma reactor,
Comprising:
Reative cell；
At least one is for providing the gas access of gas in reaction chamber plasma；With
For plasma stream being injected the plasmatorch of reative cell；
Wherein reative cell includes that circumferential body and the inner surface to circumferential body provide the dress of gas
Put to suppress deposit accumulation thereon.
Circumferential body can include porous annular component, and wherein gas provides device to include for receiving
The plenum chamber (plenum chamber) extended around annular construction member of gas.Gas under stress
By annular construction member from plenum chamber and evict from and any may have accumulated in table in annular construction member
Deposit on face.
Device (means) can be provided so that heating is supplied to the gas of the inner surface of circumferential body.
Device can be provided by the resistance heater being positioned in plenum chamber, or alternatively by around filling
The heater of air chamber provides.Heating is supplied to the gas of reactor chamber so that high temperature can
Length along reactor chamber is kept, and the component thus improving gas stream is exposed in room product
The time span of raw hot conditions and therefore improve the elimination performance of reactor.
Gas can be inert purge gas, such as nitrogen or argon, and can include reaction
Thing, such as steam, oxygen, hydrogen or methane, for entering with by one of gas access
The component reaction of the gas stream of reactor.This can provide for reactant is supplied to reaction
The suitable mechanism of device room, is supplied to reactant instead because not requiring that other gas provides
Answer device room.
Cooling tower can be together with the device of the discharge for keeping the inner surface along cooling tower
There is provided under reative cell and with reative cell fluid flow communication.This enables to leave reative cell
Reaction product stream can be cooled, and makes sour gas contained in gas stream such as simultaneously
HF can be brought into solution by the current of cladding tower inner surface, and makes solid in addition
Grain thing can be captured by this current.Cooling tower may also include heat exchanger to reclaim heat
It is supplied to the other parts of reactor.
First gas access is preferably located in and is being diametrically opposed to one another with the second gas access.Preferably
Select the shape of inner surface so that it strictly meets the shape of plasma stream, thus minimum
The length of change gas path between gas access and plasma stream.Such as, inlet head
Inner surface can be substantially cone or Frusto-conical (frustro-conical),
Wherein the cone angle of inner surface is selected as strictly match plasma logistics and enters from plasma
Mouth expands outwardly the angle residing for (flare outwardly).
Each gas access includes the spray treating the gas stream processed in the reaction chamber for reception
Mouth, and for receiving the circular passage extended around nozzle of purging gas.This purge gas
Body can be used to cool down inlet head, and additional advantage is to be taken out from inlet head by purging gas
Heat be introduced again into return to reative cell by purging gas.Purging gas can include relatively
Noble gas, such as nitrogen or argon, and may also include reactant, such as hydrogen, and steam,
Oxygen or methane, for the group with the gas stream being transported in reactor by gas access
Divide reaction.Nozzle can terminate to provide reactant to leave gas at it and entering in gas access
The chance mixed with gas stream before Kou.Entrance may also include reactant gas inlet tube, and it prolongs
Reach in nozzle, concentrically surrounded by nozzle and circular passage.Lead to reactant gas inlet tube
Reactant gas can include, such as, hydrogen, steam, methane or oxygen.Lead to reaction
The reactant gas of thing gas inlet pipe can be except any reactant leading to circular passage it
Outer, or substitute any reactant leading to circular passage.
Inlet head can include the device between plasma inlet and reative cell, for court
The first and second gas access directing plasma logistics, thus reduce to enter from gas further
Mouth extends to the gas path of plasma stream.Such as, ceramic main body may be located at inlet head
Among and be so shaped that to be directed to plasma stream to be positioned at main body and inlet head
In cone between inner surface or frustro conical passageway.Device can be provided so that in main body
Gas blanket is produced on outer surface.Such as, ceramic main body can be porous, wherein gas stream
It is provided to this main body thus on the outer surface of main body, produces gas blanket.This gas blanket can
Protective gas border is provided for ceramic main body.Gas may also include reactant, is used for and passes through
One of gas access enters the component reaction of the gas stream of reactor.If cooling water is provided
To main body, this can provide source of water vapor, and it is for the component reaction with gas stream.
With reference to accompanying drawing, as just citing, existing by describing the preferred feature of the present invention, at accompanying drawing
In:
Fig. 1 is the sectional view of the first embodiment of plasma reactor；
Fig. 2 is the sectional view of the second embodiment of plasma reactor；With
Fig. 3 is the sectional view of the 3rd embodiment of plasma reactor.
Fig. 4 is the sectional view of the 4th embodiment of plasma reactor.
Referring initially to Fig. 1, the first embodiment of plasma reactor includes reactor chamber 12.
Reactor chamber 12 substantially cylinder, and limited by the inner surface 14 of circumferential body 16
Boundary.In this embodiment, circumferential body 16 is provided by porous ceramics annular construction member, its quilt
Between circumferential body outer surface and cylinder blanket 20 formed filled volume 18 around.As
Being described in more below, by one or more inlet nozzles 22, gas is introduced into inflatable body
Long-pending 18, in order to, during use, gas enters reactor chamber 12 by circumferential body 16,
As pointed by Fig. 1 at 24.
The lower end (as shown) of reactor chamber 12 is open to allow product from reactor
Room 12 exports.The upper end (as shown) of reactor chamber 12 is connected to inlet head 30, in order to provide
Pending gas is to reactor chamber 12.Inlet head 30 includes the opening being connected to reative cell 12
Lower end 32 be positioned at the plasma inlet 34 relative with opening 32, wherein inlet head 30
Inner surface 36 taper into towards plasma inlet 34 from opening 32.
Dc plasmatorch 38 is positioned at the outside of inlet head 30 will pass through plasma inlet 34
Inject plasma stream.Plasma stream can be by any ionogenic plasma source gas
Body, such as argon or nitrogen produce.Plasma inlet 34 is so shaped that plasma
Logistics outwards spreads, when it leaves plasma inlet 34.In this embodiment, etc.
Gas ions entrance 34 has inwall, and it has a converging portion adjacent with plasmatorch 38, and with
The diffuser that the inner surface 36 of inlet head 30 is adjacent, in order to plasma stream is with plasma
Angle of flare α expands outwardly from plasma inlet 34.The inner surface 36 of inlet head 30 is become
Shape is strictly to meet the shape of plasma stream.In this embodiment, inner surface 36
The most Frusto-conical, it has cone angle beta, and this cone angle beta strictly mates plasma
Body angle of flare α.
Inlet head 30 also includes the first gas access 40 and the second gas access 42, is each located on
Between the opening 32 of plasma inlet 34 and inlet head 30 and with substantially parallel side
To extending through inlet head 30.Each gas access 40,42 is connected to corresponding gas to be provided
Pipeline 44,46, it provides it corresponding by staying in the gas processed in plasma reactor
Gas access 40,42.As Figure 1-3, entrance 40,42 can be arranged to along with
What the inner surface 14 of circumferential body 16 was parallel in downward direction provides plasma reactor to be passed through
The gas processed.Entrance 40,42 also can be arranged to will pass through guide entrance at an angle
40,42 pending gas is provided to (not shown) in inlet head 30 along the downward hand of spiral
Body passes through plasma reactor, and when therefore improve gas stop in the reactor
Between.Nozzle 48 is provided in each gas access 40,42 to receive and supplying from gas
The gas of pipeline 44,46 and injecting a gas in reative cell 12.Each nozzle 48 quilt
The annular gas limited between the outer surface and the inner surface of gas access 40,42 of nozzle 48
Passage 50 around, and provide purging gas so that making at plasma reactor wherein
Inlet head 30 is cooled down with period.
The gas being supplied to gas access 40,42 can include the row from semiconductor process chamber
Going out gas, each of which gas access 40,42 is arranged to receive from different process chambers
Gas.Such as, in certain moment, the gas being transported to gas pipeline 44 can be from
Wherein carry out the discharge gas of the process chamber of silicon oxide deposition technique, and be transported to gas tube
The gas in road 46 can be from wherein being carried out the discharge gas of the different process chamber of technique
Body.Therefore, the gas being provided to reactor can be incompatible；In this embodiment,
A kind of gas can comprise TEOS, and other gases can comprise fluorine gas.
Inlet head 30 be designed to so that plasma stream can strike on these gases,
When they enter plasma reactor from gas access 40,42.The shape of inner surface 36
Mean to only exist between each gas access 40,42 and plasma stream relatively short
Gas path, and therefore by plasma stream clash into before gas mix chance very
Little.Plasma stream can provide energy source, and it can cause significant percentage of gas
At least one component starts to react before mixing in reative cell 12 at gas.Such as, etc.
Gas ions logistics can provide for eliminating and wrapping together with the discharge gas of deposition chamber
The ignition source of the imflammable gas contained such as TEOS.TEOS is generally from having a certain amount of oxidation
Such room of agent such as oxygen or ozone is discharged, and therefore premise is to there is foot in gas
Enough oxidants, the substantially completely burning of imflammable gas can be carried out in the reactor.As
Fruit is for the burning completely of imflammable gas, and oxidant contained in discharging gas is not
Foot, other oxidant can be supplied to purge gas, this purging gas be provided to around
The circular passage 50 of the nozzle 48 of gas access 44.
As it has been described above, the gas being transported to gas pipeline 46 can be from wherein carrying out clearly
Wash the discharge gas of the process chamber of technique, and therefore can comprise purge gas, such as NF3,
And during cleaning produce fluorine gas (F2) and SiF4.By being added by plasma stream
Hot gas realizes F to enough temperature2And SiF4Elimination, these materials and steam
Reaction is quickly and completely.Additionally, steam can be provided to reactor, it is entrained in and blows
In scavenging body, this purging gas is provided to the gas passage of the nozzle around gas access 46
50 so that reaction can start in inlet head 30.Or, when imflammable gas exists
When being closely eliminated in place of gas access 44, in reative cell 12 by exist little can
Combustion property gas, if any, and therefore steam can be provided to reative cell 12, folder
Band is in the purging gas being provided to plenum chamber 18, in order to fluorine gas and SiF4With steam
Reaction is carried out completely in reative cell 12.NF3With other perfluorochemical eliminate the need for improve
Temperature and the longer time of staying, this is supplied to plenum chamber 18 (aqueous) by heating
Purge gas and realize.Purging gas can use the resistance heating being positioned in plenum chamber 18
Device or by heating around the heating jacket of plenum chamber 18.
When one of gas entering plasma reactor can be from wherein carrying out titanium dioxide
During the discharge gas of the process chamber of siliceous deposits, the particulate matter of silicon dioxide can enter reactor.
This is because during depositing operation, the condition at immediately substrate is optimized to minimize gas phase
Reaction and the reaction of maximization surface are to form continuous film on substrate.But, in room its
Condition at it and the condition in downstream, room are not so optimized, and gas-phase nucleation effect can
To result in particulate matter.These particulate matters are generally formed with certain size scope, a diameter of several
Micron until a diameter of tens of or hundreds of micron, and thinner particulate matter may often assemble and
Form bigger particulate matter.Purging gas is provided by circumferential body 16 for from annular master
The inner surface 14 of body 16 is evicted any such particulate matter, so that reative cell 12 can from
To be maintained at during the use of reactor in relative clean condition.
Therefore will include coming comfortable reaction from the open bottom end expellant gas logistics of reative cell 12
The by-product of the reaction carried out in device, and passed through other gas such as purge gas of reactor
Body and the reactant not consumed, and solid particulate matter.The open bottom end of reative cell is connected to cylinder
The after-burner 60 of shape, it includes the water-cooled of the gas stream for receiving stream autoreaction room 12
Tower 62.The cannelure 64 around cooling tower 62 is fed water to by pipe (not shown), in order to
Water overflows from the top of groove 64 and the inner surface of suitable cooling tower 62 flows down.Water is used for cooling down gas
Body logistics and prevent solid particulate matter to be deposited on the surface of cooling tower 62.It addition, gas
Any acidic components of logistics can be brought into solution by water.If needing any other quenching,
Spray injector can be arranged on the lower end of room 60 to introduce water smoke.
Gas stream and water by the outlet drain of room 60 can be transported to separator (not
Show) to separate water from gas stream, it comprises solid particulate matter and acidic materials now.
Then gas stream can be pumped through wet scrubber and remove residue from gas stream
Acidic materials, be then discharged in air.
Second embodiment of plasma reactor is illustrated in fig. 2.Second
Embodiment includes whole features of the first embodiment, additionally includes being positioned at and plasma
The ceramic main body 70 of the cone that entrance 34 is relative, in order to plasma stream is guided and puts in place
In the passage 72 of the cone between the inner surface 36 of main body 70 and inlet head 30.Main body
70 may be connected to inlet head 30, circumferential body 16 or the bottom of shell 20.Plasma
The direction of body logistics entrance conicylindrical passage 72 also reduces prolongs from each gas access 40,42
Reach the gas path of plasma stream so that gas the most processed and substantially
Before removing at least one component from gas, gas carries out mixing in the reactor and is more difficult from.
3rd embodiment of plasma reactor is illustrated in figure 3.3rd
Embodiment includes whole features of the first embodiment, and also includes being positioned at inlet head 30
And the second circumferential body 80 between circumferential body 16.This second circumferential body is preferably
Being thered is provided by porous ceramics annular construction member, described porous ceramics annular construction member is by circumferential body 80
Outer surface and cylinder blanket 84 between formed filled volume 82 around.As for annular
Like that, by one or more inlet nozzles 86, gas is introduced into filled volume 82 to main body 16,
So that during use, gas enters reactor chamber 12 by the second circumferential body 80, as
In Fig. 3 at 88 pointed by, in order to by particulate matter from the inner surface 90 of the second circumferential body 80
Evict from.As in the first embodiment, before entering reative cell 12, this gas is excellent
Selection of land is heated.
Except the length of raising reative cell 12, and therefore gas stopping in plasma reactor
Stay outside the time, enable to including this second circumferential body 80 and relevant plenum chamber 82
Length along reative cell 12 can use different flow of sweep gas speed, purging gas group
Become and temperature, in order to the gas optimization processed in the reactor can be treated and eliminate chemical process.
Such as, plenum chamber 82 can feed the purging gas for the enriched in oxygen agent eliminating hydrogen,
And the purging gas being enriched with steam can be provided to plenum chamber 18 to eliminate oxidant such as
Fluorine gas or NF3。
4th embodiment of plasma reactor is illustrated in the diagram.4th
Embodiment includes whole features of the 3rd embodiment, and also includes reactant gas entrance
Pipe 100, it provides in nozzle 48 and annular gas passage 50 and is concentrically surrounded by it.
Together with any reactant gas provided by gas passage 50, or replace any passing through
The reactant gas that gas passage 50 provides, reactant gas passes through reactant gas inlet tube
100 are supplied to pending gas.Should be understood that reactant gas inlet tube 100 can have
There is any one in the embodiment specifically described herein in Fig. 1 to 3, and be not limited to figure
Embodiment shown in 4.Additionally, relative to the reactant gas entrance of purging gas access
The arrangement of pipe, is not limited to the arrangement shown in Fig. 4.Such as, reactant gas inlet tube 100
May be arranged such that so that before entering room 12, all gas is mutually mixed.
Claims (14)
1. plasma eliminates a reactor, including:
Reative cell；
Inlet head, it has the opening being connected to reative cell, it is positioned at opening relative to the plasma inlet of position, the inner surface tapered into plasma inlet from opening, and the first and second gas accesses being each located between plasma inlet and opening；With
For plasma stream being injected by plasma inlet the plasmatorch of reative cell；
Wherein, plasma inlet is so shaped that plasma stream outwards spreads towards gas access.
Plasma the most according to claim 1 eliminates reactor, and wherein the first gas access is positioned at the second gas access in the position being diametrically opposed to one another.
3. eliminating reactor according to the plasma of claim 1 or 2, wherein the inner surface of inlet head is the most Frusto-conical.
4. eliminating reactor according to the plasma of claim 1 or 2, wherein gas access extends through inlet head with substantially parallel direction.
5. eliminating reactor according to the plasma of claim 1 or 2, each of which gas access includes the nozzle treating the gas stream processed in the reaction chamber for reception, and for receiving the circular passage extended around nozzle of purging gas.
6. eliminating reactor according to the plasma of claim 1 or 2, wherein plasma inlet has inwall, and it has the converging portion adjacent with plasmatorch, and the diffuser adjacent with the inner surface of inlet head.
7. eliminate reactor according to the plasma of claim 1 or 2, including be positioned at plasma inlet relative to position for the device towards the first and second gas access directing plasma logistics.
Plasma the most according to claim 7 eliminates reactor, and wherein guide includes main body, and it is for being directed to plasma stream in the conicylindrical passage between main body and the inner surface of inlet head.
Plasma the most according to claim 8 eliminates reactor, and wherein main body is formed by ceramic material.
The plasma of the most according to Claim 8 or 9 eliminates reactor, including the device for producing gas blanket on body outer surface.
11. plasmas according to claim 10 eliminate reactor, and wherein gas blanket is included for the reactant with the component reaction of the gas stream being entered reactor by one of gas access.
The plasma of 12. according to Claim 8,9 or 11 eliminates reactor, including the device for cooling down body outer surface.
13. plasmas according to claim 12 eliminate reactor, and wherein main body chiller is configured to main body and provides water.
14. eliminate reactor according to the plasma of claim 2,8,9,11 or 13, wherein reative cell includes that circumferential body and the inner surface to circumferential body provide gas to suppress the device of deposit accumulation thereon, described circumferential body includes porous annular component, and gas provides device to include the plenum chamber extended around annular construction member for receiving gas.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0714025.4A GB0714025D0 (en) | 2007-07-19 | 2007-07-19 | Plasma reactor |
| GB0714025.4 | 2007-07-19 | ||
| CN200880025328.1A CN101755322B (en) | 2007-07-19 | 2008-07-14 | Plasma reactor |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880025328.1A Division CN101755322B (en) | 2007-07-19 | 2008-07-14 | Plasma reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103021779A CN103021779A (en) | 2013-04-03 |
| CN103021779B true CN103021779B (en) | 2016-08-10 |
Family
ID=38476563
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210392266.6A Expired - Fee Related CN103021779B (en) | 2007-07-19 | 2008-07-14 | Plasma reactor |
| CN200880025328.1A Expired - Fee Related CN101755322B (en) | 2007-07-19 | 2008-07-14 | Plasma reactor |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880025328.1A Expired - Fee Related CN101755322B (en) | 2007-07-19 | 2008-07-14 | Plasma reactor |
Country Status (6)
| Country | Link |
|---|---|
| KR (1) | KR101490540B1 (en) |
| CN (2) | CN103021779B (en) |
| DE (1) | DE112008001790T5 (en) |
| GB (1) | GB0714025D0 (en) |
| TW (1) | TWI433718B (en) |
| WO (1) | WO2009010792A2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102125818B (en) * | 2010-12-31 | 2013-12-11 | 武汉凯迪工程技术研究总院有限公司 | Method and device for preparing high-temperature active particle-rich water vapor by plasma |
| GB2493752A (en) | 2011-08-17 | 2013-02-20 | Edwards Ltd | Apparatus for treating a gas stream |
| US9240308B2 (en) * | 2014-03-06 | 2016-01-19 | Applied Materials, Inc. | Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system |
| GB2534890A (en) * | 2015-02-03 | 2016-08-10 | Edwards Ltd | Thermal plasma torch |
| GB2536905B (en) | 2015-03-30 | 2020-01-08 | Edwards Ltd | Radiant burner |
| CN113371679A (en) * | 2021-05-27 | 2021-09-10 | 中国矿业大学 | Carbon dioxide-methane plasma high-temperature reforming device and high-temperature reforming method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW442842B (en) * | 1996-12-31 | 2001-06-23 | Atmi Ecosys Corp | Effluent gas stream treatment system for oxidation treatment of semiconductor manufacturing effluent gases |
| US6617538B1 (en) * | 2000-03-31 | 2003-09-09 | Imad Mahawili | Rotating arc plasma jet and method of use for chemical synthesis and chemical by-products abatements |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5846275A (en) * | 1996-12-31 | 1998-12-08 | Atmi Ecosys Corporation | Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
| JP2005205330A (en) | 2004-01-23 | 2005-08-04 | Kanken Techno Co Ltd | Plasma decomposition method of perfluoro compound exhaust gas, plasma decomposition apparatus using the method, and exhaust gas treating system mounted with the apparatus |
| GB0416385D0 (en) * | 2004-07-22 | 2004-08-25 | Boc Group Plc | Gas abatement |
| GB0502495D0 (en) * | 2005-02-07 | 2005-03-16 | Boc Group Plc | Ejector pump |
-
2007
- 2007-07-19 GB GBGB0714025.4A patent/GB0714025D0/en not_active Ceased
-
2008
- 2008-07-14 KR KR1020107001116A patent/KR101490540B1/en active IP Right Grant
- 2008-07-14 CN CN201210392266.6A patent/CN103021779B/en not_active Expired - Fee Related
- 2008-07-14 WO PCT/GB2008/050569 patent/WO2009010792A2/en active Application Filing
- 2008-07-14 DE DE112008001790T patent/DE112008001790T5/en not_active Ceased
- 2008-07-14 CN CN200880025328.1A patent/CN101755322B/en not_active Expired - Fee Related
- 2008-07-18 TW TW097127521A patent/TWI433718B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW442842B (en) * | 1996-12-31 | 2001-06-23 | Atmi Ecosys Corp | Effluent gas stream treatment system for oxidation treatment of semiconductor manufacturing effluent gases |
| US6617538B1 (en) * | 2000-03-31 | 2003-09-09 | Imad Mahawili | Rotating arc plasma jet and method of use for chemical synthesis and chemical by-products abatements |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009010792A2 (en) | 2009-01-22 |
| GB0714025D0 (en) | 2007-08-29 |
| WO2009010792A3 (en) | 2009-03-12 |
| KR20100037609A (en) | 2010-04-09 |
| CN103021779A (en) | 2013-04-03 |
| TWI433718B (en) | 2014-04-11 |
| CN101755322A (en) | 2010-06-23 |
| DE112008001790T5 (en) | 2010-04-29 |
| KR101490540B1 (en) | 2015-02-05 |
| CN101755322B (en) | 2014-02-19 |
| TW200914124A (en) | 2009-04-01 |
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