CN103000787A - Method for producing high-power light emitting diode (LED) ceramic radiating substrate - Google Patents
Method for producing high-power light emitting diode (LED) ceramic radiating substrate Download PDFInfo
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- CN103000787A CN103000787A CN2012104777072A CN201210477707A CN103000787A CN 103000787 A CN103000787 A CN 103000787A CN 2012104777072 A CN2012104777072 A CN 2012104777072A CN 201210477707 A CN201210477707 A CN 201210477707A CN 103000787 A CN103000787 A CN 103000787A
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- substrate
- silvering
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- heat
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Abstract
The invention discloses a method for producing a high-power light emitting diode (LED) ceramic radiating substrate. The method comprises steps of preparing a substrate body, preparing a lower layer substrate, preparing a central ceramic silver plating layer and a radiating channel in which silver paste is injected on the lower layer substrate, printing a circuit on the lower layer substrate, preparing an upper layer substrate, fixing the upper layer substrate to the printed circuit and obtaining the LED ceramic radiating substrate through heating. The method has the advantages that a plurality of radiating through holes are arranged on the lower layer substrate, the heat generated by a high-power LED is conducted to the surface of the lower layer substrate from the upper layer substrate through radiating through holes, the heat is spread to the air through free convection and thermal radiation, the radiation effect is good, the obtained substrate is high in mechanical strength, good in heat conduction and good in heat resistance, the substrate is applied to the high-power LED package, the radiating effect of the high-power LED can be improved greatly, the service life is long and the reliability is improved.
Description
Technical field
The present invention relates to the manufacture method of LED substrate, relate in particular to the high-power LED ceramic heat-dissipating substrate manufacture method.
Background technology
Compare with ordinary light source, the characteristics such as light-emitting diode (Light Emitting Diode is called for short LED) has power saving, the life-span is long, light efficiency is high, radiationless, pollution-free have been widely used in lighting field and other field.But because the great power LED dissipation power is high, cause the chip temperature rise amplitude that links to each other with great power LED large.Chip temperature raises will make that its output light flux reduces, peak wavelength drift, fluorescent material conversion efficiency reduce, form in the metal interface zone metal diffusion and metallic compound, tunnelling current increase etc.Therefore how improving the great power LED cooling performance, is the key issue that the high power LED device package application will solve.Heat that great power LED produces mainly is transmitted in the external environment by heat-radiating substrate, different heat-radiating substrate materials, and its heat conductivility is different, and choosing of heat-radiating substrate has a direct impact the high power LED device hot property.Heat-radiating substrate material commonly used comprises silicon, metal core printed board (Metal Core Printed Circuit Board is called for short MCPCB), pottery (aluminium oxide Al
2O
3, aluminium nitride) and composite material etc.MCPCB is attached to printed circuit board (PCB) on the better metal of another thermal conduction effect, strengthen heat dispersion, yet the conductive coefficient of insulating barrier is extremely low among the MCPCB, so insulating barrier is called the heat radiation bottleneck of such heat-radiating substrate, the radiating effect of restriction MCPCB heat-radiating substrate.In addition, in practical ceramic substrate material, Al
2O
3Price is lower, considers good combination property from aspects such as mechanical strength, insulating properties, thermal conductivity, thermal endurance, chemical stabilities.
Summary of the invention
The high-power LED ceramic heat-dissipating substrate manufacture method that the purpose of this invention is to provide low, the easy to make and good heat dissipation effect of a kind of cost.
For achieving the above object, a kind of high-power LED ceramic heat-dissipating substrate manufacture method of the present invention, described manufacture method may further comprise the steps:
1) getting aluminium oxide mixes by the weight ratio of 3:2 with silicate glass powder, through the wet ball grinding post-drying, powder and gel solution with oven dry is mixed into the cast slurry by the weight ratio of 2:1 again, the cast slurry that mixes injected mould burn injection forming, obtains the substrate idiosome;
2) getting the substrate idiosome that a step 1) obtains is lower laminar substrate, following laminar substrate center is the center of circle, draw circle take 8-11mm as radius, perforation formation heat dissipation channel more than one is bored in the zone that obtains with upper drawing circle, and then silver-plated to zone one end surfaces that obtains with upper drawing circle, form columniform center pottery silvering;
3) toward step 2) inject the silver slurry in the heat dissipation channel that forms;
4) printed circuit is carried out in the zone of an end surfaces except the pottery silvering of center that center pottery silvering is set on the lower laminar substrate;
5) get the substrate idiosome of another piece step 1) making as top substrate layer, and its center processed and step 2) ceramic silvering perforation corresponding to center pottery silvering size, on top substrate layer, bore a hole with the electrode corresponding section machined electrode of printed circuit again;
6) top substrate layer is fixed on the printed circuit by viscose glue, ceramic silvering one end of lower laminar substrate embeds in the ceramic silvering perforation of top substrate layer, arrange electrode circuit with screen printing mode in top substrate layer, obtain described LED ceramic heat-dissipating substrate idiosome;
7) the LED ceramic heat-dissipating substrate idiosome that step 6) is obtained is put into electric furnace and is slowly heated up, heating rate is 30-36 ℃/min, until furnace temperature reaches and is incubated 45-50 minute after 420 ℃ and carries out exhaust, the complete speed with 46-52 ℃/min of exhaust rises to 750 ℃ and be incubated 105-115 minute, then naturally cooling, extraction electrode in the electrode perforations of top substrate layer obtains described LED ceramic heat-dissipating substrate at last.
Silicate glass powder in the described step 1) comprises the component of following parts by weight:
SiO
2 75%-85%；
Al
2O
3 1%-3%；
CaO 6%-14%；
Na
2O 4%-8%。
Among the present invention, described substrate idiosome is by aluminium oxide (Al
2O
3) and silicate glass powder be mixed, and the main component of silicate glass powder is silica (SiO
2) and calcium oxide (CaO), thereby can reduce sintering temperature in the electric furnace in step 7).Because SiO
2Material thermal conductivity is lower, if addition is too high, will obviously lower the heat conductivility of substrate idiosome, and easily makes generation pore and crackle in the substrate idiosome, reduces density and the mechanical strength of substrate idiosome.By changing the silica in the silicate glass powder, the content ratio of CaO, can adjust substrate idiosome fusing point, thermal coefficient of expansion and wettability, and then satisfy the Different Preparation requirement.
In the step 1), add nonmetal Al
2O
3As the base material of substrate idiosome, can reduce substrate idiosome cost, relatively existing metal base alleviates substrate idiosome weight greatly, and makes in the making, use of substrate idiosome and obtain very large convenience, reduces simultaneously the waste of metals resources.
Add the low softening point silicate glass in the step 1), after ball milling becomes fine powder, add in the substrate idiosome to reduce the sintering temperature in the step 7) as second-phase.
The high-power LED ceramic heat-dissipating substrate that adopts above method to make, during use, great power LED is fixed on the top substrate layer surface, the heat accumulation that great power LED work produces is in the top substrate layer central area, because the central area of top substrate layer is provided with ceramic silvering perforation, center pottery silvering one end on the lower laminar substrate is embedded in the ceramic silvering perforation at top substrate layer center, so center pottery silvering conducts heat to lower floor's upper surface of base plate, conduct heat to lower floor's base lower surface by the slurry of the silver in the heat radiation through hole in substrate center of lower floor zone, heat further diffuses in the air by free convection and thermal radiation, thereby reaches the purpose of heat radiation.
Because silver slurry and center pottery silvering all have high heat conductance, so high-power LED ceramic heat-dissipating substrate of the present invention has good radiating effect.
Gel solution in the described step 1) is poly-vinyl alcohol solution.
Described step 2) heat dissipation channel in is more than 9, is evenly distributed on the pottery silvering zone, center of lower laminar substrate, reaches purpose even, quick conductive.
The purity of described aluminium oxide is more than 98%.
In a word, adopt high-power LED ceramic heat-dissipating substrate manufacture method of the present invention, have the following advantages:
1, with nonmetal Al
2O
3Ceramic material can reduce substrate idiosome cost for making the base material of substrate idiosome, greatly alleviates substrate idiosome weight, and makes in the making, use of substrate idiosome and obtain very large convenience, reduces simultaneously the waste of metals resources.
2, be provided with a plurality of heat radiation through holes in substrate center of lower floor zone, the heat that great power LED is produced can conduct to lower floor's substrate surface via the heat radiation through hole that fills up the silver slurry from the one side of top substrate layer, and then heat diffuses in the air by free convection and thermal radiation, has good radiating effect.
3, the high-power LED ceramic heat-dissipating substrate that obtains of the present invention has higher mechanical strength, heat conduction, thermal endurance advantage, and can carry out the excellent properties such as secondary heat dissipation channel processing (design heat dissipation channel shape, spacing and filling Heat Conduction Material), be applied to radiating effect, working life and the reliability that can obviously improve great power LED in the high-power LED encapsulation.
Embodiment
The present invention is further detailed explanation below in conjunction with embodiment:
A kind of high-power LED ceramic heat-dissipating substrate manufacture method of the present invention, described manufacture method may further comprise the steps:
1) getting aluminium oxide mixes by the weight ratio of 3:2 with silicate glass powder, through the wet ball grinding post-drying, powder and gel solution with oven dry is mixed into the cast slurry by the weight ratio of 2:1 again, the cast slurry that mixes injected mould burn injection forming, obtains the substrate idiosome;
2) getting the substrate idiosome that a step 1) obtains is lower laminar substrate, following laminar substrate center is the center of circle, draw circle take 8-11mm as radius, perforation formation heat dissipation channel more than one is bored in the zone that obtains with upper drawing circle, and then silver-plated to zone one end surfaces that obtains with upper drawing circle, form columniform center pottery silvering;
3) toward step 2) inject the silver slurry in the heat dissipation channel that forms;
4) printed circuit is carried out in the zone of an end surfaces except the pottery silvering of center that center pottery silvering is set on the lower laminar substrate;
5) get the substrate idiosome of another piece step 1) making as top substrate layer, and its center processed and step 2) ceramic silvering perforation corresponding to center pottery silvering size, on top substrate layer, bore a hole with the electrode corresponding section machined electrode of printed circuit again;
6) top substrate layer is fixed on the printed circuit by viscose glue, ceramic silvering one end of lower laminar substrate embeds in the ceramic silvering perforation of top substrate layer, arrange electrode circuit with screen printing mode in top substrate layer, obtain described LED ceramic heat-dissipating substrate idiosome;
7) the LED ceramic heat-dissipating substrate idiosome that step 6) is obtained is put into electric furnace and is slowly heated up, heating rate is 30-36 ℃/min, until furnace temperature reaches and is incubated 45-50 minute after 420 ℃ and carries out exhaust, the complete speed with 46-52 ℃/min of exhaust rises to 750 ℃ and be incubated 105-115 minute, then naturally cooling, extraction electrode in the electrode perforations of top substrate layer obtains described LED ceramic heat-dissipating substrate at last.
Embodiment 1
1) getting purity is that 98% above aluminium oxide mixes by the weight ratio of 3:2 with silicate glass powder, through the wet ball grinding post-drying, powder and polyvinyl alcohol gel solution with oven dry is mixed into the cast slurry by the weight ratio of 2:1 again, the cast slurry that mixes is injected mould burn injection forming, obtain the substrate idiosome;
2) getting the substrate idiosome that a step 1) obtains is lower laminar substrate, following laminar substrate center is the center of circle, draw circle take 8mm as radius, 9 perforation are bored in the zone that obtains with upper drawing circle form heat dissipation channel, heat dissipation channel is evenly distributed on the pottery silvering zone, center of lower laminar substrate, and then silver-plated to zone one end surfaces that obtains with upper drawing circle, form columniform center pottery silvering;
Wherein, silicate glass powder comprises the component of following parts by weight:
SiO
2 75%；
Al
2O
3 3%；
CaO 14%；
Na
2O 8%。
3) toward step 2) inject the silver slurry in the heat dissipation channel that forms;
4) printed circuit is carried out in the zone of an end surfaces except the pottery silvering of center that center pottery silvering is set on the lower laminar substrate;
5) get the substrate idiosome of another piece step 1) making as top substrate layer, and its center processed and step 2) ceramic silvering perforation corresponding to center pottery silvering size, on top substrate layer, bore a hole with the electrode corresponding section machined electrode of printed circuit again;
6) top substrate layer is fixed on the printed circuit by viscose glue, ceramic silvering one end of lower laminar substrate embeds in the ceramic silvering perforation of top substrate layer, arrange electrode circuit with screen printing mode in top substrate layer, obtain described LED ceramic heat-dissipating substrate idiosome;
7) the LED ceramic heat-dissipating substrate idiosome that step 6) is obtained is put into electric furnace and is slowly heated up, heating rate is 30-36 ℃/min, until furnace temperature reaches and is incubated 45 minutes after 420 ℃ and carries out exhaust, the complete speed with 46-52 ℃/min of exhaust rises to 750 ℃ and be incubated 115 minutes, then naturally cooling, extraction electrode in the electrode perforations of top substrate layer obtains described LED ceramic heat-dissipating substrate at last.
Embodiment 2
1) getting purity is that 98% above aluminium oxide mixes by the weight ratio of 3:2 with silicate glass powder, through the wet ball grinding post-drying, powder and polyvinyl alcohol gel solution with oven dry is mixed into the cast slurry by the weight ratio of 2:1 again, the cast slurry that mixes is injected mould burn injection forming, obtain the substrate idiosome;
2) getting the substrate idiosome that a step 1) obtains is lower laminar substrate, following laminar substrate center is the center of circle, draw circle take 11mm as radius, 10 perforation are bored in the zone that obtains with upper drawing circle form heat dissipation channel, heat dissipation channel is evenly distributed on the pottery silvering zone, center of lower laminar substrate, and then silver-plated to zone one end surfaces that obtains with upper drawing circle, form columniform center pottery silvering;
Wherein, silicate glass powder comprises the component of following parts by weight:
SiO
2 85%；
Al
2O
3 1%；
CaO 10%；
Na
2O 4%。
3) toward step 2) inject the silver slurry in the heat dissipation channel that forms;
4) printed circuit is carried out in the zone of an end surfaces except the pottery silvering of center that center pottery silvering is set on the lower laminar substrate;
5) get the substrate idiosome of another piece step 1) making as top substrate layer, and its center processed and step 2) ceramic silvering perforation corresponding to center pottery silvering size, on top substrate layer, bore a hole with the electrode corresponding section machined electrode of printed circuit again;
6) top substrate layer is fixed on the printed circuit by viscose glue, ceramic silvering one end of lower laminar substrate embeds in the ceramic silvering perforation of top substrate layer, arrange electrode circuit with screen printing mode in top substrate layer, obtain described LED ceramic heat-dissipating substrate idiosome;
7) the LED ceramic heat-dissipating substrate idiosome that step 6) is obtained is put into electric furnace and is slowly heated up, heating rate is 30-36 ℃/min, until furnace temperature reaches and is incubated 50 minutes after 420 ℃ and carries out exhaust, the complete speed with 46-52 ℃/min of exhaust rises to 750 ℃ and be incubated 105 minutes, then naturally cooling, extraction electrode in the electrode perforations of top substrate layer obtains described LED ceramic heat-dissipating substrate at last.
Embodiment 3
1) getting purity is that 98% above aluminium oxide mixes by the weight ratio of 3:2 with silicate glass powder, through the wet ball grinding post-drying, powder and polyvinyl alcohol gel solution with oven dry is mixed into the cast slurry by the weight ratio of 2:1 again, the cast slurry that mixes is injected mould burn injection forming, obtain the substrate idiosome;
2) getting the substrate idiosome that a step 1) obtains is lower laminar substrate, following laminar substrate center is the center of circle, draw circle take 10mm as radius, 11 perforation are bored in the zone that obtains with upper drawing circle form heat dissipation channel, heat dissipation channel is evenly distributed on the pottery silvering zone, center of lower laminar substrate, and then silver-plated to zone one end surfaces that obtains with upper drawing circle, form columniform center pottery silvering;
Wherein, silicate glass powder comprises the component of following parts by weight:
SiO
2 83%；
Al
2O
3 3%；
CaO 6%%；
Na
2O 8%。
3) toward step 2) inject the silver slurry in the heat dissipation channel that forms;
4) printed circuit is carried out in the zone of an end surfaces except the pottery silvering of center that center pottery silvering is set on the lower laminar substrate;
5) get the substrate idiosome of another piece step 1) making as top substrate layer, and its center processed and step 2) ceramic silvering perforation corresponding to center pottery silvering size, on top substrate layer, bore a hole with the electrode corresponding section machined electrode of printed circuit again;
6) top substrate layer is fixed on the printed circuit by viscose glue, ceramic silvering one end of lower laminar substrate embeds in the ceramic silvering perforation of top substrate layer, arrange electrode circuit with screen printing mode in top substrate layer, obtain described LED ceramic heat-dissipating substrate idiosome;
7) the LED ceramic heat-dissipating substrate idiosome that step 6) is obtained is put into electric furnace and is slowly heated up, heating rate is 30-36 ℃/min, until furnace temperature reaches and is incubated 47 minutes after 420 ℃ and carries out exhaust, the complete speed with 46-52 ℃/min of exhaust rises to 750 ℃ and be incubated 110 minutes, then naturally cooling, extraction electrode in the electrode perforations of top substrate layer obtains described LED ceramic heat-dissipating substrate at last.
Claims (5)
1. high-power LED ceramic heat-dissipating substrate manufacture method, it is characterized in that: described manufacture method may further comprise the steps:
1) getting aluminium oxide mixes by the weight ratio of 3:2 with silicate glass powder, through the wet ball grinding post-drying, powder and gel solution with oven dry is mixed into the cast slurry by the weight ratio of 2:1 again, the cast slurry that mixes injected mould burn injection forming, obtains the substrate idiosome;
2) getting the substrate idiosome that a step 1) obtains is lower laminar substrate, following laminar substrate center is the center of circle, draw circle take 8-11mm as radius, perforation formation heat dissipation channel more than one is bored in the zone that obtains with upper drawing circle, and then silver-plated to zone one end surfaces that obtains with upper drawing circle, form columniform center pottery silvering;
3) toward step 2) inject the silver slurry in the heat dissipation channel that forms;
4) printed circuit is carried out in the zone of an end surfaces except the pottery silvering of center that center pottery silvering is set on the lower laminar substrate;
5) get the substrate idiosome of another piece step 1) making as top substrate layer, and its center processed and step 2) ceramic silvering perforation corresponding to center pottery silvering size, on top substrate layer, bore a hole with the electrode corresponding section machined electrode of printed circuit again;
6) top substrate layer is fixed on the printed circuit by viscose glue, ceramic silvering one end of lower laminar substrate embeds in the ceramic silvering perforation of top substrate layer, arrange electrode circuit with screen printing mode in top substrate layer, obtain described LED ceramic heat-dissipating substrate idiosome;
7) the LED ceramic heat-dissipating substrate idiosome that step 6) is obtained is put into electric furnace and is slowly heated up, heating rate is 30-36 ℃/min, until furnace temperature reaches and is incubated 45-50 minute after 420 ℃ and carries out exhaust, the complete speed with 46-52 ℃/min of exhaust rises to 750 ℃ and be incubated 105-115 minute, then naturally cooling, extraction electrode in the electrode perforations of top substrate layer obtains described LED ceramic heat-dissipating substrate at last.
2. high-power LED ceramic heat-dissipating substrate manufacture method according to claim 1, it is characterized in that: the silicate glass powder in the described step 1) comprises the component of following parts by weight:
SiO
2 75%-85%；
Al
2O
3 1%-3%；
CaO 6%-14%；
Na
2O 4%-8%。
3. high-power LED ceramic heat-dissipating substrate manufacture method according to claim 1, it is characterized in that: the gel solution in the described step 1) is poly-vinyl alcohol solution.
4. high-power LED ceramic heat-dissipating substrate manufacture method according to claim 1, it is characterized in that: the heat dissipation channel described step 2) is more than 9, is evenly distributed on the pottery silvering zone, center of lower laminar substrate.
5. high-power LED ceramic heat-dissipating substrate manufacture method according to claim 1, it is characterized in that: the purity of described aluminium oxide is more than 98%.
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|---|---|---|---|
| CN201210477707.2A CN103000787B (en) | 2012-11-22 | 2012-11-22 | A kind of high-power LED ceramic heat-dissipating substrate manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210477707.2A CN103000787B (en) | 2012-11-22 | 2012-11-22 | A kind of high-power LED ceramic heat-dissipating substrate manufacture method |
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| CN103000787A true CN103000787A (en) | 2013-03-27 |
| CN103000787B CN103000787B (en) | 2015-10-28 |
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ID=47929128
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110880544A (en) * | 2018-09-06 | 2020-03-13 | 深圳市斯迈得半导体有限公司 | Chip for glass substrate and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080179618A1 (en) * | 2007-01-26 | 2008-07-31 | Ching-Tai Cheng | Ceramic led package |
| CN102165589A (en) * | 2008-10-03 | 2011-08-24 | E·I·内穆尔杜邦公司 | Production process for surface-mounting ceramic LED package, surface-mounting ceramic LED package produced by said production process, and mold for producing said package |
| CN102714259A (en) * | 2010-02-05 | 2012-10-03 | 旭硝子株式会社 | Substrate for mounting light-emitting element, and light-emitting device |
-
2012
- 2012-11-22 CN CN201210477707.2A patent/CN103000787B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080179618A1 (en) * | 2007-01-26 | 2008-07-31 | Ching-Tai Cheng | Ceramic led package |
| CN102165589A (en) * | 2008-10-03 | 2011-08-24 | E·I·内穆尔杜邦公司 | Production process for surface-mounting ceramic LED package, surface-mounting ceramic LED package produced by said production process, and mold for producing said package |
| CN102714259A (en) * | 2010-02-05 | 2012-10-03 | 旭硝子株式会社 | Substrate for mounting light-emitting element, and light-emitting device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110880544A (en) * | 2018-09-06 | 2020-03-13 | 深圳市斯迈得半导体有限公司 | Chip for glass substrate and manufacturing method thereof |
| CN110880544B (en) * | 2018-09-06 | 2021-09-03 | 深圳市斯迈得半导体有限公司 | Chip for glass substrate and manufacturing method thereof |
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| CN103000787B (en) | 2015-10-28 |
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Denomination of invention: Method for producing high-power light emitting diode (LED) ceramic radiating substrate Effective date of registration: 20160831 Granted publication date: 20151028 Pledgee: China Co truction Bank Corp Zhangzhou Longwen branch Pledgor: Fushun Optoelectronics Technology Co., Ltd. Registration number: 2016350000088 |
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Granted publication date: 20151028 Termination date: 20191122 |