CN103000591B - 芯片封装件的环结构 - Google Patents

芯片封装件的环结构 Download PDF

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CN103000591B
CN103000591B CN201110426156.2A CN201110426156A CN103000591B CN 103000591 B CN103000591 B CN 103000591B CN 201110426156 A CN201110426156 A CN 201110426156A CN 103000591 B CN103000591 B CN 103000591B
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frame section
bight
ring structure
chip
inside opening
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CN103000591A (zh
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林文益
刘育志
游明志
林宗澍
苏柏荣
卢景睿
林韦廷
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

一种芯片封装件的环结构包括：适用于接合至衬底的框架部和至少一个角部。框架部围绕半导体芯片并限定内部开口，内部开口暴露衬底表面的一部分。至少一个角部从框架部的角部朝向芯片延伸，并且该角部没有尖角。本发明还提供了一种芯片封装件的环结构。

Description

芯片封装件的环结构
技术领域
本发明一般地涉及半导体芯片封装件，更具体地来说，涉及芯片封装件的环结构。
背景技术
在半导体芯片封装件中，将半导体芯片安装在衬底上的情况下，在经历温度循环和/或在正常操作期间时，芯片封装件可能存在可靠性问题。倒装芯片球栅阵列，芯片封装技术类型，以倒置的方式将芯片的有源面安装在衬底上，并且通过附接至衬底上的输入/输出焊盘的多个焊料凸块将芯片的有源面接合到该衬底上。由于芯片和芯片封装元件之间固有的热膨胀系数不匹配，例如，衬底和底部填充胶(在芯片和衬底之间流动的粘合剂)之间，在芯片封装件中常常引起封装件翘曲和热应力。
这些较高的热应力和翘曲不仅会导致芯片的低介电常数(低k)互连层的分层，而且可能引起焊料凸块裂缝，从而导致故障或者芯片封装件的长期工作可靠性劣化。一种减少该芯片封装件翘曲的方法是在封装件的内部附接环结构。然而，即使采用位于封装间内部的环结构，封装件也可能仍然存在一定程度的翘曲。例如，翘曲和由此产生的应力可能仍存在于芯片封装件的区域中，例如，在芯片处于的封装件的中心区域处。
发明内容
为了解决现有技术所存在的问题，根据本发明的一个方面，提供了一种芯片封装件的环结构，包括：框架部，用于接合至衬底，所述框架部围绕半导体芯片并限定内部开口，所述内部开口暴露衬底表面的一部分；以及至少一个角部，所述角部从所述框架部的角部朝向芯片延伸，并且所述至少一个角部的末端没有尖角。
在该环结构中，所述至少一个角部包含与所述框架部相同的材料。
在该环结构中，所述至少一个角部包含与所述框架部不同的材料。
在该环结构中，至少一个角部包含导电材料、金属、铜、钨、铝、多晶硅、硅化物、陶瓷、强于相邻介电材料的材料、其合金，或者其组合。
根据本发明的另一方面，提供了一种芯片封装件的环结构，包括：框架部，用于接合至衬底，所述框架部具有用于围绕半导体芯片的内部开口，所述内部开口暴露衬底表面的一部分；以及至少一个中间扇形部，围绕半导体芯片并限定内部开口，并且所述至少一个中间扇形部的末端没有尖角。
在该环结构中，所述至少一个中间扇形部包含与所述框架部相同的材料。
在该环结构中，所述至少一个中间扇形部包含与所述框架部不同的材料。
在该环结构中，所述至少一个中间扇形部包含导电材料、金属、铜、钨、铝、多晶硅、硅化物、陶瓷、强于相邻介电材料的材料、其合金，或者其组合。
根据本发明的另一方面，提供了一种集成电路结构，包括：衬底；半导体芯片；以及环结构，具有：用于接合至所述衬底的框架部，所述框架部围绕所述芯片并限定内部开口，所述内部开口暴露所述衬底表面的一部分；以及至少一个角部，所述角部从所述框架部的所述内部开口的角部朝向所述芯片延伸，并且所述角部没有尖角。
在该集成电路结构中，所述至少一个角部包含与所述框架部相同的材料。
在该集成电路结构中，所述至少一个角部包含与所述框架部不同的材料。
在该集成电路结构中，所述至少一个角部包含：导电材料、金属、铜、钨、铝、多晶硅、硅化物、陶瓷、强于相邻介电材料的材料、其合金，或者其组合。
附图说明
根据以下详细描述、附加的权利要求书、和附图，本发明的特征、方面和优点将更充分显现，其中：
图1为安装在衬底上的具有环结构的半成品倒装芯片球栅阵列封装件的横截面图。
图2为环结构的俯视图。
图3为本发明的第一实施例的环结构的俯视图。
图4为本发明的第二实施例的环结构的俯视图。
图5为本发明的第三实施例的环结构的俯视图。
具体实施方式
在以下描述中，阐述了许多特定的细节从而提供了本发明的完全理解。然而，本领域的普通技术人员之一应意识到没有这些特定的细节也可实施本发明。在一些例子中，没有详细描述公知的结构从而避免了不必要的模糊的实施例。
现在，将对本发明进行更详细的介绍，在附图中没有示出其实例。
图1为安装到衬底20上的具有环结构2的半成品倒装芯片球栅阵列(FCBGA)封装件10的横截面图。为了便于说明和易于理解，在某些方面，已经扩大了FCBGA封装件10的部件和尺寸。然而，本领域技术人员应该理解，在实际器件中，这些部件的相对尺寸与图1中所示出的相对尺寸不同。FCBGA封装件10包括：芯片30，该芯片具有上表面32和与上表面32相对的下表面34。一组焊料凸块40连接到位于芯片30的下表面34上的接触焊盘(未示出)。芯片30和焊料凸块40的组合通常作为倒转芯片众所周知并且被称作倒装芯片。将芯片30固定至位于芯片30下方的第一衬底20。将焊料凸块40粘附至位于第一衬底20的上表面上的接触焊盘(未示出)。可以将底部填充胶50填充于芯片30和第一衬底20之间以硬化FCBGA封装件10并进一步保护芯片30防止弯曲损坏。可以将一组焊料球60固定至位于第一衬底20的下表面上的接触焊盘(未示出)。还可以将焊料球60固定至第二衬底70上的接触焊盘(未示出)。第二衬底70可以为印刷线路板(有时也称为印刷电路板)或者可以为本领域技术人员众所周知的多层模块。
FCBGA封装件10还可能包括：散热器80和环结构2，用于防止封装件过多翘曲。将散热器80安装在芯片30的顶部以散发由芯片30产生的热量并自动抵消通过至少在芯片30和第一衬底20之间的热膨胀不匹配所产生的作用力。通过粘合剂(未示出)将环结构2安装在第一衬底20和散热器80之间。在图2中示出了环结构2的俯视图。然而，如以上所讨论，即使采用环结构2，封装件可能仍然存在一定程度的翘曲问题。
本发明的环结构的各个实施例提供了高于环结构2的抗翘曲和扭曲的硬度。图3为根据本发明第一实施例的环结构3的俯视图。优选地，环结构3具有安装至第一衬底20的尽可能多表面区域，从而使得环结构3可以有助于尽可能大的程度地在结构上加强FCBGA封装件10抗扭曲和翘曲的能力。主要通过封装件的大小来确定环结构3的尺寸，并且该环结构的尺寸至少取决于第一衬底20的大小和形状。根据一个实施例，环结构3可以具有大约500到大约1,000微米的厚度。
环结构3具有一个坚硬的平面框架部4，用于将一面接合至第一衬底20，并且将另一面接合至散热元件，例如，散热器80。在某些实施例中，框架部4由刚性材料形成。在至少一个实施例中，框架部4包括导电材料、金属、铜、钨、铝、多晶硅、硅化物、陶瓷、强于相邻介电材料的材料、其合金，或者其组合。然而，本领域技术人员应该理解框架部4可以由任何材料制成，该任何材料为抗翘曲和扭曲的芯片封装件提供足够硬度。
环结构3的框架部4具有在其中的开口，以围绕集成电路器件，例如芯片30。应该理解，开口和相应的环结构3的尺寸取决于集成电路器件(芯片)的大小，环结构3必须接收和围绕该集成电路器件。在某些实施例中，确定开口和环结构3的尺寸，从而最大化环结构3的表面区域，可以该环结构的表面区域安装至第一衬底20，从而尽可能多地减少扭曲和翘曲。
再次参考图3，框架部4包括多个角部6。角部6可以伸长，从而允许环结构3具有安装至第一衬底20的更大表面区域，从而提高了芯片封装件的结构强度。框架部4和角部6减少了由热膨胀不匹配所导致的翘曲，至少在FCBGA封装件10的芯片30和元件之间可能存在该热膨胀不匹配。在至少一个实施例中，如图3所示，框架部4具有形成在框架部4的角部处的多个角部6。在某些实施例中，角部6的末端为微圆形并且相应地没有尖角。微圆的末端可以有助于减少应力，在角部6和衬底之间的接触点处存在该应力，从而有助于减少芯片封装件的翘曲。
在某些实施例中，角部6由刚性材料形成。在至少一个实施例中，角部6包含导电材料、金属、铜、钨、铝、多晶硅、硅化物、陶瓷、强于相邻介电材料的材料、其合金，或者其组合。然而，本领域技术人员会理解角部6可以由任何材料制成，该材料为抗翘曲和扭曲的芯片封装件提供足够的硬度。在某些实施例中，一个或多个角部6包括与框架部4相同的材料。在其他实施例中，一个或多个角部6包括与框架部4不同的材料。
在另一个实施例中，如图4所示，框架部4具有形成在框架部4的中部处的多个中间扇形部8。在另一个实施例中，如图5所示，框架部4具有：形成在框架部4的角部处的多个角部6和形成在框架部4的中部处的多个中间扇形部8。
在图3至5所示的实施例中，框架部4和角部6及中间扇形部8通过为其提供强度减少了芯片封装件的翘曲和扭曲。当与采用传统环结构的集成电路封装件相比较时，本发明的环结构的实施例加强了芯片封装件的抗扭曲和翘曲能力，从而提高了封装件的性能。应该理解，具有根据本发明各方面的环结构的多个不同的变型例，其中，当然附图仅示出了几个环结构。为了示出本发明的实施例和优点，将本发明的环结构用于FCBGA芯片封装件；然而，本发明的环结构不仅限于FCBGA芯片封装件。可以将本发明的实施例等同地应用于任何类型的芯片封装件。
根据一个实施例，芯片封装件的环结构包括适用于接合至衬底的框架部。框架部围绕半导体芯片并限定内部开口，并且内部开口暴露衬底表面的一部分。至少一个角部从框架部朝向芯片延伸，并且角部的末端没有尖角。
根据另一个实施例，芯片封装件的环结构包括适用于接合至衬底的框架部。框架部围绕半导体芯片并限定内部开口，并且内部开口暴露衬底表面的一部分。至少一个中间扇形部从框架部朝向芯片延伸，并且中间扇形部没有尖角。
根据又一个实施例，集成电路结构包括衬底、半导体芯片、和环结构。环结构具有适用于接合至衬底的框架部。框架部围绕半导体芯片并限定内部开口，并且内部开口暴露衬底表面的一部分。至少一个角部从框架部朝向芯片延伸，并且该角部没有尖角。
在以上描述中，具体参考示例性实施例描述了本发明。然而很明显，在不背离在权利要求书中所阐述的本发明的宽泛主旨和范围的情况下，可以做各种更改、结构、工艺、和改变。因此，说明书和附图是为了说明而不用于限定。据了解本发明可以使用各种其它组合和环境且可以在如这里所陈述的本发明的范围内改变或更改。

Claims (6)

1.一种芯片封装件的环结构，包括：
框架部，用于接合至衬底，所述框架部围绕半导体芯片并限定内部开口，所述内部开口暴露衬底表面的一部分；
至少一个角部，所述角部从所述框架部的角部朝向芯片延伸，并且所述至少一个角部的末端是微圆形且没有尖角，以及所述至少一个角部包含与所述框架部不同的材料；以及
至少一个中间扇形部，所述至少一个中间扇形部从所述框架部的相应的边缘朝向所述芯片延伸，并且所述至少一个中间扇形部的末端没有尖角。
2.根据权利要求1所述的环结构，其中，至少一个角部包含导电材料、金属、铜、钨、铝、多晶硅、硅化物、陶瓷、强于相邻介电材料的材料、其合金，或者其组合。
3.一种芯片封装件的环结构，包括：
框架部，用于接合至衬底，所述框架部具有用于围绕半导体芯片的内部开口，所述内部开口暴露衬底表面的一部分；以及
至少一个中间扇形部，所述至少一个中间扇形部从所述框架部的相应的边缘朝向所述内部开口延伸，并且所述至少一个中间扇形部的末端是微圆形且没有尖角，所述至少一个中间扇形部包含与所述框架部不同的材料。
4.根据权利要求3所述的环结构，其中，所述至少一个中间扇形部包含导电材料、金属、铜、钨、铝、多晶硅、硅化物、陶瓷、强于相邻介电材料的材料、其合金，或者其组合。
5.一种集成电路结构，包括：
衬底；
半导体芯片；以及
环结构，具有：
用于接合至所述衬底的框架部，所述框架部围绕所述芯片并限定内部开口，所述内部开口暴露所述衬底表面的一部分；
至少一个角部，所述角部从所述框架部的所述内部开口的角部朝向所述芯片延伸，并且所述角部是微圆形且没有尖角，所述至少一个角部包含与所述框架部不同的材料；以及
至少一个中间扇形部，所述至少一个中间扇形部从所述框架部的相应的边缘朝向所述内部开口延伸，并且所述至少一个中间扇形部的末端是微圆形的且没有尖角。
6.根据权利要求5所述的集成电路结构，其中，所述至少一个角部包含：导电材料、金属、铜、钨、铝、多晶硅、硅化物、陶瓷、强于相邻介电材料的材料、其合金，或者其组合。
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