CN102982215B - Soi h型栅mos器件的建模方法 - Google Patents
Soi h型栅mos器件的建模方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 23
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- 229910044991 metal oxide Inorganic materials 0.000 title abstract 2
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 238000004088 simulation Methods 0.000 claims abstract description 19
- 238000000605 extraction Methods 0.000 claims description 4
- 235000013599 spices Nutrition 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 6
- 239000003990 capacitor Substances 0.000 abstract 8
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 2
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- 238000007728 cost analysis Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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CN103955570B (zh) * | 2014-04-22 | 2017-01-18 | 中国科学院微电子研究所 | 一种h型栅soi器件的建模方法 |
CN103955574B (zh) * | 2014-04-24 | 2017-01-04 | 中国科学院微电子研究所 | 一种bts型栅soi器件的建模方法 |
CN104951599B (zh) * | 2015-06-04 | 2018-11-02 | 中国科学院微电子研究所 | 一种soimosfet器件的建模方法 |
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US6559470B2 (en) * | 2000-06-22 | 2003-05-06 | Progressed Technologies, Inc. | Negative differential resistance field effect transistor (NDR-FET) and circuits using the same |
CN102142057B (zh) * | 2011-05-04 | 2013-05-22 | 华东师范大学 | 应用于mosfet电学仿真的bsim4应力的建模方法 |
CN102646147B (zh) * | 2012-04-24 | 2015-02-18 | 中国科学院微电子研究所 | Mos器件的建模方法 |
CN102655149B (zh) * | 2012-05-07 | 2015-01-07 | 中国航天科技集团公司第九研究院第七七一研究所 | 一种基于pd soi工艺的体栅耦合esd保护结构 |
CN102789530B (zh) * | 2012-07-17 | 2014-10-15 | 中国科学院微电子研究所 | Soi mos器件的建模方法 |
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