CN104951599B - 一种soimosfet器件的建模方法 - Google Patents
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- 238000013461 design Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
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- 238000012360 testing method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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CN112052636A (zh) * | 2020-08-31 | 2020-12-08 | 中国科学院微电子研究所 | 基于bsimsoi的fdsoi mosfet器件建模方法及装置 |
CN112883675B (zh) * | 2021-03-10 | 2024-05-14 | 中国科学院微电子研究所 | 一种半导体器件建模方法及装置 |
CN115455875B (zh) * | 2022-09-05 | 2024-07-05 | 深圳华大九天科技有限公司 | 一种soi工艺中结电容和结电流的表征方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102637215A (zh) * | 2011-02-10 | 2012-08-15 | 上海宏力半导体制造有限公司 | 半导体器件建模方法 |
CN102708268A (zh) * | 2012-06-21 | 2012-10-03 | 中国科学院微电子研究所 | Mos器件的建模方法 |
CN102789530A (zh) * | 2012-07-17 | 2012-11-21 | 中国科学院微电子研究所 | Soi mos器件的建模方法 |
CN102982215A (zh) * | 2013-01-06 | 2013-03-20 | 中国科学院微电子研究所 | Soi h型栅mos器件的建模方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN102637215A (zh) * | 2011-02-10 | 2012-08-15 | 上海宏力半导体制造有限公司 | 半导体器件建模方法 |
CN102708268A (zh) * | 2012-06-21 | 2012-10-03 | 中国科学院微电子研究所 | Mos器件的建模方法 |
CN102789530A (zh) * | 2012-07-17 | 2012-11-21 | 中国科学院微电子研究所 | Soi mos器件的建模方法 |
CN102982215A (zh) * | 2013-01-06 | 2013-03-20 | 中国科学院微电子研究所 | Soi h型栅mos器件的建模方法 |
Non-Patent Citations (1)
Title |
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MOS器件模型参数提取;郭超;《中国优秀博硕士学位论文全文数据库(硕士) 信息科技辑》;20050315(第01期);第I135-147页 * |
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