CN102981370B - 光刻设备、用于光刻设备的支撑台以及器件制造方法 - Google Patents

光刻设备、用于光刻设备的支撑台以及器件制造方法 Download PDF

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Publication number
CN102981370B
CN102981370B CN201210292390.5A CN201210292390A CN102981370B CN 102981370 B CN102981370 B CN 102981370B CN 201210292390 A CN201210292390 A CN 201210292390A CN 102981370 B CN102981370 B CN 102981370B
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China
Prior art keywords
support section
brace table
heat energy
substrate
temperature sensor
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CN201210292390.5A
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English (en)
Chinese (zh)
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CN102981370A (zh
Inventor
J·G·C·昆尼
J·H·W·雅各布斯
C·C·W·沃斯帕盖特
R·范德哈姆
I·A·J·托马斯
M·霍本
T·S·M·劳伦特
G·M·M·考克兰
R·H·M·J·布洛克斯
G·彼得斯
P·L·J·岗特尔
M·J·里米
S·C·R·德尔克斯
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ASML Netherlands BV
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ASML Netherlands BV
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Microscoopes, Condenser (AREA)
CN201210292390.5A 2011-08-18 2012-08-16 光刻设备、用于光刻设备的支撑台以及器件制造方法 Active CN102981370B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161524960P 2011-08-18 2011-08-18
US61/524,960 2011-08-18

Publications (2)

Publication Number Publication Date
CN102981370A CN102981370A (zh) 2013-03-20
CN102981370B true CN102981370B (zh) 2015-08-05

Family

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Country Status (7)

Country Link
US (3) US9897928B2 (enExample)
EP (1) EP2560050A1 (enExample)
JP (2) JP2013042127A (enExample)
KR (2) KR20130020636A (enExample)
CN (1) CN102981370B (enExample)
SG (1) SG188036A1 (enExample)
TW (1) TWI512408B (enExample)

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EP2856262B1 (en) 2012-05-29 2019-09-25 ASML Netherlands B.V. Support apparatus, lithographic apparatus and device manufacturing method
NL2012452A (en) * 2013-04-09 2014-10-13 Asml Netherlands Bv Support structure, associated apparatusses and methods.
WO2015028202A1 (en) 2013-08-30 2015-03-05 Asml Netherlands B.V. Immersion lithographic apparatus
US9541846B2 (en) * 2013-09-06 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Homogeneous thermal equalization with active device
JP6244454B2 (ja) 2013-09-27 2017-12-06 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置のための支持テーブル、リソグラフィ装置、及び、デバイス製造方法
JP6018606B2 (ja) 2014-06-27 2016-11-02 東京エレクトロン株式会社 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法
JP6625568B2 (ja) * 2014-07-23 2019-12-25 エーエスエムエル ネザーランズ ビー．ブイ． 調節システム及び調節システムを備えるリソグラフィ装置
CN110068991B (zh) * 2014-10-23 2021-03-12 Asml荷兰有限公司 用于光刻设备的支撑台和光刻设备
CN104614951B (zh) * 2015-03-04 2016-10-19 京东方科技集团股份有限公司 曝光装置和曝光方法
KR102756397B1 (ko) * 2015-10-06 2025-01-16 에이에스엠엘 홀딩 엔.브이. 리소그래피 장치의 물체를 유지하는 척과 클램프 및 리소그래피 장치의 클램프에 의해 유지되는 물체의 온도를 제어하는 방법
JP6868109B2 (ja) 2017-01-26 2021-05-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及びデバイスを製造する方法
CN111406235B (zh) 2017-11-20 2025-01-21 Asml荷兰有限公司 衬底保持器、衬底支撑件和将衬底夹持至夹持系统的方法
CN110554572B (zh) * 2018-05-31 2020-10-16 上海微电子装备（集团）股份有限公司 吸盘
KR102002625B1 (ko) * 2018-06-11 2019-07-22 한국표준과학연구원 확장된 검사 영역을 갖는 웨이퍼 센서, 및 이를 이용한 건식 공정 장치
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US11966165B2 (en) 2021-01-22 2024-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion exposure tool
JP2022125685A (ja) 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法
WO2025187424A1 (ja) * 2024-03-04 2025-09-12 東京エレクトロン株式会社 基板処理装置

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Also Published As

Publication number Publication date
JP6080875B2 (ja) 2017-02-15
SG188036A1 (en) 2013-03-28
CN102981370A (zh) 2013-03-20
EP2560050A1 (en) 2013-02-20
JP2013042127A (ja) 2013-02-28
US20200124993A1 (en) 2020-04-23
KR20150082145A (ko) 2015-07-15
US9897928B2 (en) 2018-02-20
US11300890B2 (en) 2022-04-12
JP2015065482A (ja) 2015-04-09
TW201314378A (zh) 2013-04-01
US20180284627A1 (en) 2018-10-04
KR20130020636A (ko) 2013-02-27
TWI512408B (zh) 2015-12-11
KR101932995B1 (ko) 2018-12-27
US20130045447A1 (en) 2013-02-21
US10520837B2 (en) 2019-12-31

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