CN102978699A - 硼镓共掺的重掺p型单晶硅的生长及掺杂方法 - Google Patents
硼镓共掺的重掺p型单晶硅的生长及掺杂方法 Download PDFInfo
- Publication number
- CN102978699A CN102978699A CN2012104659697A CN201210465969A CN102978699A CN 102978699 A CN102978699 A CN 102978699A CN 2012104659697 A CN2012104659697 A CN 2012104659697A CN 201210465969 A CN201210465969 A CN 201210465969A CN 102978699 A CN102978699 A CN 102978699A
- Authority
- CN
- China
- Prior art keywords
- single crystal
- growth
- doped
- boron
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 30
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 28
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 59
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052786 argon Inorganic materials 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 239000010453 quartz Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims abstract description 7
- 239000000155 melt Substances 0.000 claims abstract description 6
- 238000000227 grinding Methods 0.000 claims abstract description 4
- 238000010899 nucleation Methods 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000005247 gettering Methods 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000005520 cutting process Methods 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 238000005096 rolling process Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 241001347978 Major minor Species 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210465969.7A CN102978699B (zh) | 2012-11-16 | 2012-11-16 | 硼镓共掺的重掺p型单晶硅的生长及掺杂方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210465969.7A CN102978699B (zh) | 2012-11-16 | 2012-11-16 | 硼镓共掺的重掺p型单晶硅的生长及掺杂方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102978699A true CN102978699A (zh) | 2013-03-20 |
CN102978699B CN102978699B (zh) | 2015-11-11 |
Family
ID=47853030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210465969.7A Active CN102978699B (zh) | 2012-11-16 | 2012-11-16 | 硼镓共掺的重掺p型单晶硅的生长及掺杂方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102978699B (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104124292A (zh) * | 2013-04-23 | 2014-10-29 | 晶澳太阳能有限公司 | 硼镓共掺单晶硅片及其制备方法和太阳能电池 |
WO2014194830A1 (zh) * | 2013-06-07 | 2014-12-11 | 英利能源(中国)有限公司 | 石英坩埚及其制作方法、p型硅铸锭及其制作方法 |
CN104514031A (zh) * | 2013-12-02 | 2015-04-15 | 浙江长兴众成电子有限公司 | 一种直拉单晶硅的掺杂装置及使用方法 |
CN105002557A (zh) * | 2015-08-12 | 2015-10-28 | 常州天合光能有限公司 | 一种镓锗硼共掺多晶硅及其制备方法 |
CN105063750A (zh) * | 2015-08-12 | 2015-11-18 | 常州天合光能有限公司 | 一种镓锗硼共掺单晶硅及其制备方法 |
CN106222452A (zh) * | 2016-07-26 | 2016-12-14 | 成都锦沪新材料有限公司 | 一种棒状砷的制备方法 |
CN112779601A (zh) * | 2020-12-23 | 2021-05-11 | 有研半导体材料有限公司 | 一种重掺砷极低电阻硅单晶的生长方法 |
US20210159259A1 (en) * | 2019-11-26 | 2021-05-27 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal substrate and silicon epitaxial wafer for solid-state image sensor and solid-state image sensor |
CN112951932A (zh) * | 2019-11-26 | 2021-06-11 | 信越半导体株式会社 | 固体摄像组件用的硅单晶基板及硅磊晶晶圆、以及固体摄像组件 |
CN114737251A (zh) * | 2022-04-08 | 2022-07-12 | 中环领先半导体材料有限公司 | 获取硅单晶最佳拉速以制备高bmd密度12英寸外延片的方法 |
CN115233292A (zh) * | 2022-07-25 | 2022-10-25 | 北京麦竹吉科技有限公司 | 一种低电阻率硅单晶及其制备方法 |
WO2023051693A1 (zh) * | 2021-09-29 | 2023-04-06 | 西安奕斯伟材料科技有限公司 | 氮掺杂剂加料装置、方法及氮掺杂单晶硅棒的制造系统 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002083981A (ja) * | 2000-09-07 | 2002-03-22 | Shin Etsu Handotai Co Ltd | 太陽電池セルおよびその製造方法 |
CN102400219A (zh) * | 2011-11-30 | 2012-04-04 | 东海晶澳太阳能科技有限公司 | 一种硼-镓共掺准单晶硅及其制备方法 |
-
2012
- 2012-11-16 CN CN201210465969.7A patent/CN102978699B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002083981A (ja) * | 2000-09-07 | 2002-03-22 | Shin Etsu Handotai Co Ltd | 太陽電池セルおよびその製造方法 |
CN102400219A (zh) * | 2011-11-30 | 2012-04-04 | 东海晶澳太阳能科技有限公司 | 一种硼-镓共掺准单晶硅及其制备方法 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104124292A (zh) * | 2013-04-23 | 2014-10-29 | 晶澳太阳能有限公司 | 硼镓共掺单晶硅片及其制备方法和太阳能电池 |
WO2014194830A1 (zh) * | 2013-06-07 | 2014-12-11 | 英利能源(中国)有限公司 | 石英坩埚及其制作方法、p型硅铸锭及其制作方法 |
CN104514031A (zh) * | 2013-12-02 | 2015-04-15 | 浙江长兴众成电子有限公司 | 一种直拉单晶硅的掺杂装置及使用方法 |
CN105002557A (zh) * | 2015-08-12 | 2015-10-28 | 常州天合光能有限公司 | 一种镓锗硼共掺多晶硅及其制备方法 |
CN105063750A (zh) * | 2015-08-12 | 2015-11-18 | 常州天合光能有限公司 | 一种镓锗硼共掺单晶硅及其制备方法 |
CN106222452A (zh) * | 2016-07-26 | 2016-12-14 | 成都锦沪新材料有限公司 | 一种棒状砷的制备方法 |
CN112951932A (zh) * | 2019-11-26 | 2021-06-11 | 信越半导体株式会社 | 固体摄像组件用的硅单晶基板及硅磊晶晶圆、以及固体摄像组件 |
US20210159259A1 (en) * | 2019-11-26 | 2021-05-27 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal substrate and silicon epitaxial wafer for solid-state image sensor and solid-state image sensor |
US11824070B2 (en) * | 2019-11-26 | 2023-11-21 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal substrate and silicon epitaxial wafer for solid-state image sensor and solid-state image sensor |
CN112951932B (zh) * | 2019-11-26 | 2024-05-14 | 信越半导体株式会社 | 固体摄像组件用的硅单晶基板及硅磊晶晶圆、以及固体摄像组件 |
CN112779601A (zh) * | 2020-12-23 | 2021-05-11 | 有研半导体材料有限公司 | 一种重掺砷极低电阻硅单晶的生长方法 |
CN112779601B (zh) * | 2020-12-23 | 2022-08-05 | 有研半导体硅材料股份公司 | 一种重掺砷极低电阻硅单晶的生长方法 |
WO2023051693A1 (zh) * | 2021-09-29 | 2023-04-06 | 西安奕斯伟材料科技有限公司 | 氮掺杂剂加料装置、方法及氮掺杂单晶硅棒的制造系统 |
TWI827224B (zh) * | 2021-09-29 | 2023-12-21 | 大陸商西安奕斯偉材料科技股份有限公司 | 氮摻雜劑加料裝置、方法及氮摻雜單晶矽棒的製造系統 |
CN114737251A (zh) * | 2022-04-08 | 2022-07-12 | 中环领先半导体材料有限公司 | 获取硅单晶最佳拉速以制备高bmd密度12英寸外延片的方法 |
CN115233292A (zh) * | 2022-07-25 | 2022-10-25 | 北京麦竹吉科技有限公司 | 一种低电阻率硅单晶及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102978699B (zh) | 2015-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102978699B (zh) | 硼镓共掺的重掺p型单晶硅的生长及掺杂方法 | |
CN102978698B (zh) | 一种硼镓共掺的重掺p型单晶硅的生长及掺杂方法 | |
US7364618B2 (en) | Silicon wafer, method for manufacturing the same and method for growing silicon single crystals | |
US7320731B2 (en) | Process for growing silicon single crystal and process for producing silicon wafer | |
TWI577841B (zh) | 單晶矽之成長方法及其製備之單晶矽錠(二) | |
TW526297B (en) | Silicon wafer and silicon epitaxial wafer and production methods thereof | |
CN105755533A (zh) | 一种直拉法制备高电阻硅单晶的方法 | |
TWI308939B (en) | Method for growing single crystal and single crystal grown thereby | |
TWI703242B (zh) | 摻雜少量釩的半絕緣碳化矽單晶、基材、製備方法 | |
CN109629003B (zh) | 一种低浓度p型磷化铟单晶的制备方法 | |
CN101671841B (zh) | 一种用于直拉硅单晶制备中的含氮掺杂剂的制备方法 | |
CN105970284B (zh) | 一种p型单晶硅片及其制造方法 | |
CN106591952A (zh) | 一种SiC晶片的制备方法 | |
CN108977888A (zh) | 化合物半导体晶片、光电转换元件、以及iii-v族化合物半导体单晶的制造方法 | |
CN103305905B (zh) | 一种变埚比的单晶硅生长方法 | |
Xu et al. | Effects of high temperature annealing on the dislocation density and electrical properties of upgraded metallurgical grade multicrystalline silicon | |
CN115652426A (zh) | 一种降低大尺寸n型直拉单晶硅片碎片率的拉制方法 | |
CN104711675A (zh) | 磷砷锑共掺杂的n型重掺直拉硅单晶及其硅外延片 | |
CN111733455B (zh) | 共含锗和氮杂质的单晶硅片、其制备方法以及包含所述硅片的集成电路 | |
CN1233883C (zh) | 一种磁场下生长低缺陷密度直拉硅单晶的方法 | |
TWI654343B (zh) | 單晶矽之成長方法及其製備之單晶矽錠(一) | |
JP4978396B2 (ja) | エピタキシャルウェーハの製造方法 | |
CN105316767B (zh) | 超大规模集成电路用硅片及其制造方法、应用 | |
CN102168312A (zh) | 一种高掺氮的硅片及其快速掺氮的方法 | |
US20190006190A1 (en) | Fz silicon and method to prepare fz silicon |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: ZHEJIANG COWIN ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SUN XINLI Effective date: 20130716 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 313199 HUZHOU, ZHEJIANG PROVINCE TO: 313100 HUZHOU, ZHEJIANG PROVINCE |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20130716 Address after: 313100, No. 1299, front East Street, Changxing County Economic Development Zone, Zhejiang, Huzhou Applicant after: Zhejiang Cowin Electronics Co., Ltd. Address before: 313199 Zhejiang city of Huzhou province Changxing County City Lijing Building 2 pheasant town 41 unit 102 room Applicant before: Sun Xinli |
|
CB02 | Change of applicant information |
Address after: 313100, No. 1299, front East Street, Changxing County Economic Development Zone, Zhejiang, Huzhou Applicant after: ZHEJIANG ZHONGJING TECHNOLOGY CO., LTD. Address before: 313100, No. 1299, front East Street, Changxing County Economic Development Zone, Zhejiang, Huzhou Applicant before: Zhejiang Cowin Electronics Co., Ltd. |
|
COR | Change of bibliographic data | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |