CN102969426B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN102969426B
CN102969426B CN201210075741.7A CN201210075741A CN102969426B CN 102969426 B CN102969426 B CN 102969426B CN 201210075741 A CN201210075741 A CN 201210075741A CN 102969426 B CN102969426 B CN 102969426B
Authority
CN
China
Prior art keywords
light emitting
layer
conductive layers
conductive
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210075741.7A
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English (en)
Chinese (zh)
Other versions
CN102969426A (zh
Inventor
丁焕熙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN102969426A publication Critical patent/CN102969426A/zh
Application granted granted Critical
Publication of CN102969426B publication Critical patent/CN102969426B/zh
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201210075741.7A 2011-09-01 2012-03-19 发光器件 Active CN102969426B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110088636A KR101830719B1 (ko) 2011-09-01 2011-09-01 발광 소자
KR10-2011-0088636 2011-09-01

Publications (2)

Publication Number Publication Date
CN102969426A CN102969426A (zh) 2013-03-13
CN102969426B true CN102969426B (zh) 2017-03-01

Family

ID=45841327

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210075741.7A Active CN102969426B (zh) 2011-09-01 2012-03-19 发光器件

Country Status (5)

Country Link
US (1) US8884506B2 (https=)
EP (1) EP2565921B1 (https=)
JP (1) JP5960452B2 (https=)
KR (1) KR101830719B1 (https=)
CN (1) CN102969426B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239311B2 (ja) * 2012-08-20 2017-11-29 エルジー イノテック カンパニー リミテッド 発光素子
KR101886156B1 (ko) * 2012-08-21 2018-09-11 엘지이노텍 주식회사 발광소자
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP2015173177A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光素子
KR102212666B1 (ko) 2014-06-27 2021-02-05 엘지이노텍 주식회사 발광소자
KR102237152B1 (ko) * 2015-02-23 2021-04-07 엘지이노텍 주식회사 발광소자 및 라이팅 유닛
TWI781193B (zh) * 2017-08-24 2022-10-21 日商索尼股份有限公司 發光模組、光源單元、光造形裝置
US11749790B2 (en) * 2017-12-20 2023-09-05 Lumileds Llc Segmented LED with embedded transistors
DE202019000909U1 (de) 2019-02-23 2019-04-05 Makram Abdalla Messgeräteeinheit mit einer Skala und einem Zeiger mit Grenzmomentkupplung

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
EP2280430B1 (en) * 2005-03-11 2020-01-01 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
KR100599012B1 (ko) 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
US8643034B2 (en) * 2008-02-29 2014-02-04 Osram Opto Semiconductors Gmbh Monolithic, optoelectronic semiconductor body and method for the production thereof
DE102008011848A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
TW200947652A (en) 2008-05-12 2009-11-16 Harvatek Corp Semiconductor chip package structure for achieving positive face electrical connection without using substrates and a wire-bonding process
KR100999689B1 (ko) * 2008-10-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법, 이를 구비한 발광장치
KR101017395B1 (ko) * 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
US8237180B2 (en) * 2009-02-18 2012-08-07 Hitachi Cable, Ltd. Light emitting element including center electrode and thin wire electrode extending from periphery of the center electrode
KR100969126B1 (ko) * 2009-03-10 2010-07-09 엘지이노텍 주식회사 발광 소자
EP2445018B1 (en) * 2009-06-15 2016-05-11 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light-emitting device, light-emitting module, and illumination device
JP2011035017A (ja) * 2009-07-30 2011-02-17 Hitachi Cable Ltd 発光素子
KR100986570B1 (ko) * 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
JP2013055318A (ja) 2013-03-21
JP5960452B2 (ja) 2016-08-02
US20120182738A1 (en) 2012-07-19
KR20130025232A (ko) 2013-03-11
CN102969426A (zh) 2013-03-13
EP2565921B1 (en) 2018-08-15
US8884506B2 (en) 2014-11-11
KR101830719B1 (ko) 2018-02-21
EP2565921A1 (en) 2013-03-06

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Legal Events

Date Code Title Description
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PB01 Publication
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SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210819

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China