CN102969358B - A kind of horizontal high voltage power semiconductor device - Google Patents
A kind of horizontal high voltage power semiconductor device Download PDFInfo
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- CN102969358B CN102969358B CN201210516539.3A CN201210516539A CN102969358B CN 102969358 B CN102969358 B CN 102969358B CN 201210516539 A CN201210516539 A CN 201210516539A CN 102969358 B CN102969358 B CN 102969358B
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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Abstract
A kind of horizontal high voltage power semiconductor device, belongs to power semiconductor device technology field.Comprise longitudinal superjunction structure cell and terminal structure; Terminal structure is positioned at outside or the periphery of overall structure cell.Longitudinal superjunction structure cell reduces conducting resistance while raising puncture voltage, and compare traditional horizontal superjunction devices, longitudinal superjunction structure cell reduces chip area, reduce further conducting resistance; Single or multiple cellular is integrated, and multiple cellular in parallel can share same terminal, and is laterally drawn by drain electrode by terminal structure, is not only easy to integrated with custom circuit, and greatly reduces chip area, reduce process costs further.The present invention has the plurality of advantages such as low, the withstand voltage height of conducting resistance, chip area are little, adopts the present invention can obtain the transverse semiconductor power device of various function admirable, has the feature of high speed, high integration, low conduction loss.
Description
Technical field
The invention belongs to power semiconductor device technology field, relate to a kind of horizontal high voltage power semiconductor device.
Background technology
Horizontal high voltage power semiconductor device is that high-voltage power integrated circuit develops requisite part, and high voltage power device requires to have high puncture voltage, low conducting resistance and low switching loss.Horizontal high voltage power device realizes high puncture voltage, requires that it has long size and low doping content for bearing withstand voltage drift region, but in order to meet device low on-resistance, requires that again the drift region as current channel has high doping content.In power MOS (Metal Oxide Semiconductor) device design, puncture voltage BV(Breakdown Voltage) and conduction resistance R
on, sprelation very severe: R
on, sp∝ BV
2.5, this contradictory relation limits the application of such device in high-voltage great-current field.In order to solve this to contradiction, the Chen Xing academician that assists proposes a kind of new power MOS device in its United States Patent (USP) in 1998---CoolMOS, and move towards market very soon.CoolMOS device adopts P, N bar structure alternately to replace low-doped drift region layer in conventional power MOS device to make voltage support layer (Withstand voltage layer).When device adds reverse bias voltage, P, N bar exhausts mutually, bears device withstand voltage.Because the doping content of P bar and N bar is higher than the drift region concentration of traditional structure, its forward conduction resistance is reduced greatly, thus improves the contradiction between conducting resistance and device withstand voltage.But the P bar of traditional horizontal super-junction structure and N bar place along device horizontal direction, compared with longitudinal super-junction structure, element layout area is comparatively large, and then adds manufacturing cost.
Summary of the invention
For solving problem existing in above-mentioned prior art, the present invention proposes a kind of novel horizontal high voltage power semiconductor device, this device comprises structure cell and terminal structure.On the one hand, introduce P type doping bar in N-type drift region and form longitudinal superjunction drift region structure, break traditions the silicon limit, alleviates the contradictory relation between device withstand voltage and conducting resistance, and reduce element layout area; On the other hand, superjunction drift region structure doping content is higher, for open-circuit current provides low impedance path, thus reduces conducting resistance; Again on the one hand, during OFF state, the P type doping bar of high concentration and N-type doping bar introduce two new electric field spikes in drift region, make drift region electromotive force at the distributional class of source and drain terminal like the Potential Distributing of longitudinal super-junction structure, simultaneously, the extra electric field that N-type doping bar and P type doping bar produce, enhances media slot electric field, thus improves device withstand voltage; Finally, the single or multiple cellular of this device accessible site, multiple cellular shares same terminal structure, greatly reduces chip area, reduces process costs.
Technical solution of the present invention is:
A kind of horizontal high voltage power semiconductor device, as shown in Figure 2, comprises at least one or more than one longitudinal superjunction structure cell 61 and terminal structure 62; Multiple longitudinal superjunction structure cell 61 along device transverse direction or Width together tightly packed, form overall longitudinal superjunction structure cell; Described terminal structure 62 is positioned at outside or the periphery of overall structure cell.
Described longitudinal superjunction structure cell 61 comprises the N-type drift region 31 being positioned at P type substrate 1 surface, be positioned in the type tagma, P type tagma 41, P 41 of side, N-type drift region 31 top have respectively with the P being positioned at device surface source metal 52 and being connected
+source contact area 42 and N
+source contact area 32; Have P type doping bar 43, P type doping bar 43 in N-type drift region 31 below P type tagma 41 and form super-junction structure with the N-type drift region 31 on side, the N-type drift region 31 below super-junction structure and super-junction structure forms the drift region with part super-junction structure; Grid structure is made up of gate oxide 23 and polygate electrodes 51, and wherein gate oxide 23 contacts with N-type drift region 31 and P type tagma 41, mutually isolated by dielectric layer 22 between polygate electrodes 51 and source metal 52.
Described terminal structure 62, comprises N-type drift region 31, N-type doping bar 34, N-type heavy doping drain contact region 33 and media slot 2; In terminal structure 62, the side, top of N-type drift region 31 is the N-type heavy doping drain contact region 33 be connected with drain metal 53, N-type doping bar 34 is arranged in the N-type drift region 31 below N-type heavy doping drain contact region 33, and contacts with N-type heavy doping drain contact region 33; Media slot 2 is between N-type doping bar 34 and the P type doping bar 43 of described longitudinal superjunction structure cell 61, media slot 2 and N-type doping bar 34 below reserve part N-type drift region 31 as current channel, between drain metal 53 and source metal 52 by dielectric layer 22 mutually isolated.
Horizontal high voltage power semiconductor device provided by the invention comprises longitudinal superjunction structure cell 61 and terminal structure 62.In the N-type drift region 31 of longitudinal structure cell 61, introduce P type doping bar 43, form longitudinal super-junction structure with N-type drift region 31.The N-type doping bar 34 introduced in terminal structure 62 forms N with N-type drift region 31
+n ties, and the concentration of N-type doping bar 34 is higher, for ON state current provides low impedance path, thus reduces conducting resistance.The transverse direction of device is withstand voltage bears primarily of the media slot 2 in terminal structure 62, adopts that media slot 2 is withstand voltage can reduce chip area, reduces process costs.Horizontal high voltage power semiconductor device provided by the invention can adopt the structures such as planar gate, groove grid or V-type grid, applying flexible.The single or multiple longitudinal superjunction structure cell 61 of device accessible site, multiple cellular can share same terminal structure 62, greatly reduces chip area, reduces process costs further.
Operation principle of the present invention can be described below:
Horizontal high voltage power semiconductor device provided by the invention can adopt the structures such as planar gate, groove grid or V-type grid, and the operation principle of these structures is similar, and during OFF state, horizontal high voltage power semiconductor devices function principle as shown in Figure 3.
The single or multiple longitudinal superjunction structure cell 61 of horizontal high voltage power semiconductor device accessible site provided by the invention, multiple longitudinal superjunction structure cell 61 can share same terminal structure 62, thus greatly reduces chip area.The withstand voltage media slot 2 primarily of terminal structure 62 of transverse direction of device determines.As shown in Figure 3 (b), when device withstand voltage, the PN junction metallurgical junction face that N-type drift region 31 and P type tagma 41 are formed starts to exhaust, along with drain voltage increases, depletion region is expanded to N-type drift region 31, and peak electric field appears in the PN junction metallurgical junction face that N-type drift region 31 and P type tagma 41 are formed.The P type doping bar 43 assisted depletion N-type drift region 31 introduced in N-type drift region 31, optimised devices longitudinal electric field, improves device longitudinally withstand voltage.Simultaneously, remaining negative ionization acceptor charge in the P type doping bar 43 exhausted, Electric Field Distribution in modulation device body, avoid electric field line in source concentrations, and introduce new peak electric field in the interface of P type doping bar 43 and media slot 2, amplified medium groove electric field, improves device laterally withstand voltage further.N-type doping bar 34 is also comprised in terminal structure, N-type doping bar 34 concentration is higher, during device withstand voltage, the N-type doping bar exhausted is left ionized donor electric charge positive in a large number, Electric Field Distribution in modulation device body, avoids drain terminal electric field line concentrations, and introduces new electric field spike at N-type doping bar 43 and media slot interface, amplified medium groove electric field, thus improve device electric breakdown strength.The introducing of P type doping bar 43, adds the concentration of N-type drift region 31, therefore while raising puncture voltage, reduces conducting resistance.Meanwhile, the N-type doping bar 34 of high-concentration dopant provides low impedance path for ON state current, reduces device on-resistance further.P type doping bar 43 and N-type doping bar 34 introduce two new electric field spikes in the body of N drift region 31, optimize the Potential Distributing of drift region, make drift region electromotive force in the Potential Distributing of distributional class seemingly longitudinal super-junction structure of source and drain terminal.Adopt that media slot is withstand voltage can reduce element layout area further, reduce process costs.Device is integrated on P type substrate material 1, and because device source is withstand voltage, compared with traditional sucrose groove structure, the assisted depletion effect of N-type drift region 31 pairs of P type substrate 1 is more obvious, such that the longitudinal direction of device is withstand voltage to be increased greatly.
It should be noted that:
(1) introduce P type doping bar 43 in longitudinal superjunction structure cell 61, form longitudinal super-junction structure with N-type drift region 31, alleviate the contradictory relation between puncture voltage and conducting resistance.
(2) terminal structure 62 comprises N-type drift region 31, N-type doping bar 34, media slot 2 and the second N-type heavily doped region 33.
(3) N-type heavy doping drain contact region 33 replaces according to P type heavy doping drain contact region 44, can realize transversal I GBT(Insulated Gate Bipolar Transistor of good performance) device.
(4) the single or multiple longitudinal superjunction structure cell of device accessible site, the cellular of multiple parallel connection can share same terminal structure 62, thus greatly reduces element layout area.
(5) the N-type doping bar 34 in horizontal high voltage power semiconductor device can have and also can not have.
(6) lateral high-voltage device can be the structures such as planar gate, groove grid or V-type grid.
The present invention has following beneficial effect:
Horizontal high voltage power semiconductor device provided by the invention comprises longitudinal superjunction structure cell 61 and terminal structure 62, wherein, the N-type drift region 31 of longitudinal superjunction structure cell 61 introduces P type doping bar 43, form longitudinal super-junction structure, break traditions power MOS (Metal Oxide Semiconductor) device theoretical limit, keeping MOS institute advantageous while, there is again extremely low conduction resistance and high withstand voltage.When tradition transverse power MOS device realizes high puncture voltage, require that it has long size and low doping content for bearing withstand voltage N-type drift region, this makes the area of device and conducting resistance greatly increase, and adds process costs, thus limits the application of horizontal high voltage power device.In horizontal high voltage power semiconductor device provided by the invention, terminal structure mainly comprises N-type drift region 31, media slot 2, N-type heavy doping drain contact region 33 and N-type doping bar 34, media slot is born withstand voltage, the area needed is less, thus reduces the chip area of device.The P type doping bar 43 assisted depletion N-type drift region 31 of media slot 2 side, optimised devices longitudinal electric field.When P type doping bar exhausts, for drift region provides a large amount of negative ionization acceptor charge, modulation drift region electric field, in the distribution of source, is avoided source electric field line concentrations, is caused device to puncture in advance.During ON state, the N-type doping bar 34 of high concentration provides low impedance path for ON state current, conducting resistance can be reduced, during OFF state, the N-type doping bar 34 exhausted introduces ionized donor electric charge positive in a large number at media slot 2 opposite side, modulation drift region electric field, in the distribution of source, is avoided drain terminal electric field line concentrations at the contact interface of drain electrode and media slot 2, is prevented device from puncturing in advance.N-type doping bar 34 and P type doping bar 43 introduce two new electric field spikes, optimised devices body internal electric field, amplified medium groove electric field, thus improve device withstand voltage.Described lateral high-voltage device can adopt the structures such as planar gate, groove grid or V-type grid, meanwhile, the single or multiple structure cell 61 of accessible site, the cellular 61 of multiple parallel connection can share same terminal structure 62, therefore greatly reduce element layout area, reduce process costs.Second N-type heavily doped region 33 of lateral high-voltage device replaces with the 2nd P type heavily doped region 44, can obtain the transversal I GBT device of high withstand voltage and low on-resistance.
In sum, horizontal high voltage power semiconductor device of the present invention has the plurality of advantages such as low, the withstand voltage height of conducting resistance, chip area be little, reduces technology difficulty and cost.Therefore, adopt the present invention can obtain the transverse semiconductor power device of various function admirable, there is the feature of high speed, high integration, low conduction loss.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is traditional horizontal high voltage power semiconductor device architecture profile.
Fig. 2 is planar gate provided by the invention horizontal high voltage power semiconductor device architecture profile, comprises longitudinal superjunction structure cell 61 and terminal structure 62, longitudinal super-junction structure that cellular adopts P type doping bar 43 and N-type drift region 31 to form.
Fig. 3 is the withstand voltage schematic diagram of traditional horizontal high voltage power device and horizontal high voltage power semiconductor device provided by the invention, and wherein, (a) is the withstand voltage schematic diagram of traditional devices; B () is the withstand voltage schematic diagram of device of the present invention.
Fig. 4 is shallow slot grid provided by the invention horizontal high voltage power semiconductor device architecture profile.
Fig. 5 is deep trouth grid provided by the invention horizontal high voltage power semiconductor device architecture profile.
Fig. 6 is planar gate provided by the invention horizontal high voltage power semiconductor device architecture profile, does not comprise N-type doping bar 34 in terminal structure 62.
Fig. 7 is a kind of novel transversal I GBT device architecture profile provided by the invention, and wherein, N-type heavy doping drain contact region 33 adopts P type heavy doping drain contact region 44 to replace.
Fig. 8 is planar gate provided by the invention horizontal high voltage power semiconductor device architecture profile, and device is integrated with multiple longitudinal superjunction structure cell 61.
Fig. 9 is groove grid provided by the invention horizontal high voltage power semiconductor device architecture profile, and device is integrated with multiple longitudinal superjunction structure cell 61.
Figure 10 be traditional horizontal high voltage power semiconductor device and horizontal high voltage power semiconductor device breakdown provided by the invention time, the potential profile in device body, wherein, (a) is traditional lateral high-voltage device potential profile when puncturing; Potential profile when () is horizontal high voltage power semiconductor device breakdown provided by the invention b.
Figure 11 be traditional horizontal high voltage power device and horizontal high voltage power semiconductor device breakdown provided by the invention time, the transverse electric field distribution figure of device, comprises surface field and body internal electric field.
Embodiment
A kind of horizontal high voltage power semiconductor device, as shown in Figure 2, comprises at least one or more than one longitudinal superjunction structure cell 61 and terminal structure 62; Multiple longitudinal superjunction structure cell 61 along device transverse direction or Width together tightly packed, form overall longitudinal superjunction structure cell; Described terminal structure 62 is positioned at outside or the periphery of overall structure cell.
Described longitudinal superjunction structure cell 61 comprises the N-type drift region 31 being positioned at P type substrate 1 surface, be positioned in the type tagma, P type tagma 41, P 41 of side, N-type drift region 31 top have respectively with the P being positioned at device surface source metal 52 and being connected
+source contact area 42 and N
+source contact area 32; Have P type doping bar 43, P type doping bar 43 in N-type drift region 31 below P type tagma 41 and form super-junction structure with the N-type drift region 31 on side, the N-type drift region 31 below super-junction structure and super-junction structure forms the drift region with part super-junction structure; Grid structure is made up of gate oxide 23 and polygate electrodes 51, and wherein gate oxide 23 contacts with N-type drift region 31 and P type tagma 41, mutually isolated by dielectric layer 22 between polygate electrodes 51 and source metal 52.
Described terminal structure 62, comprises N-type drift region 31, N-type doping bar 34, N-type heavy doping drain contact region 33 and media slot 2; In terminal structure 62, the side, top of N-type drift region 31 is the N-type heavy doping drain contact region 33 be connected with drain metal 53, N-type doping bar 34 is arranged in the N-type drift region 31 below N-type heavy doping drain contact region 33, and contacts with N-type heavy doping drain contact region 33; Media slot 2 is between N-type doping bar 34 and the P type doping bar 43 of described longitudinal superjunction structure cell 61, media slot 2 and N-type doping bar 34 below reserve part N-type drift region 31 as current channel, between drain metal 53 and source metal 52 by dielectric layer 22 mutually isolated.
The present invention, by introducing P type doping bar 43 and N-type doping bar 34 in N-type drift region 31, optimised devices conducting resistance and puncture voltage, adopts media slot 2 withstand voltage simultaneously, can reduce chip area, reduce manufacturing cost.Adopt the present invention can obtain the horizontal high voltage power semiconductor device of various function admirable, there is the feature of high speed, high integration, low conduction loss.
The present invention introduces P type doping bar 43, P type doping bar 43 and forms longitudinal super-junction structure, assisted depletion N-type drift region 31, optimised devices longitudinal electric field with N-type drift region 31 in the N-type drift region 31 of structure cell 61.The N-type doping bar 34 introduced in terminal structure forms N with N-type drift region 31
+n ties, and the concentration of N-type doping bar 34 is higher, for ON state current provides low impedance path, thus reduces device on-resistance.During device withstand voltage, N-type doping bar 34 and P type doping bar 43 introduce two new electric field spikes in drift region, amplified medium groove electric field, thus the puncture voltage improving device.The withstand voltage media slot 2 primarily of terminal structure 62 of transverse direction of device determines, adopts that media slot 2 is withstand voltage can reduce chip area, reduces process costs.Horizontal high voltage power semiconductor device provided by the invention can adopt the structures such as planar gate, groove grid or V-type grid, applying flexible.The single or multiple longitudinal superjunction structure cell 61 of device accessible site, multiple cellular can share same terminal structure 62, reduces chip area further, reduces process costs.
Horizontal high voltage power semiconductor device provided by the invention, the structures such as planar gate, groove grid or V-type grid can be adopted, opposite planar grid, that selects the cellular of slot grid structure to do is less, because the raceway groove of groove grid is longitudinally, channel length is determined by the junction depth in P type tagma 41, and the channel length of planar gate is determined by the length in P type tagma 41.
Fig. 3 is the withstand voltage schematic diagram of traditional horizontal high voltage power device and horizontal high voltage power semiconductor device provided by the invention, wherein, a () is the withstand voltage schematic diagram of traditional lateral high-voltage device, the conventional device structure of its correspondence as shown in Figure 1, when device withstand voltage, N-type drift region 31 exhausts, remaining positive in a large number ionized donor electric charge, and when only having P type tagma 41 and P type heavy doping source contact area 42 to exhaust, remaining negative ionization acceptor impurity, make the electric field line in media slot 2, P type tagma 41 and P type heavy doping source contact area 42 is pointed to through media slot 2 from N-type heavy doping drain contact region 33, as shown in Fig. 3 (a), in source A point and drain terminal B point place electric field line concentrations, device is caused to puncture in advance.
Fig. 3 (b) is the withstand voltage schematic diagram of horizontal high voltage power semiconductor device provided by the invention, with figure (a) unlike, the present invention introduces N-type doping bar 34 and P type doping bar 43, P type doping bar 43 introducing in the both sides of media slot 2 adds the concentration of N-type drift region.P type doping bar 43 and N-type drift region 31 form longitudinal super-junction structure, during OFF state, and P type doping bar assisted depletion N-type drift region 31, new electric field spike is introduced in the interface of drift region and media slot 2, improve body silicon electric field, thus make media slot electric-field enhancing, device withstand voltage increases.The P type doping bar exhausted introduces a large amount of negative ionization acceptor charge on the left of media slot, and the electric field line in modulated media groove, in the distribution of source, avoids electric field line in source electrode concentrations, prevents device from puncturing at A ' point in advance.N-type doping bar 34 concentration is higher, the N-type doping bar exhausted is left ionized donor electric charge positive in a large number, thus the electric field line of modulated media groove is in the distribution of drain terminal, avoids electric field line to concentrate at drain electrode, prevent device from puncturing at B ' point in advance, thus improve the puncture voltage of device.Comparison diagram 3(a) and (b) visible, the media slot electric field line distribution of high tension apparatus provided by the invention is even, can not in source and drain terminal concentrations, and this makes device body internal electric field strengthen, the area that electric field and abscissa are encircled a city increases greatly, and namely the puncture voltage of device improves greatly.
The withstand voltage principle of the horizontal high voltage power device of groove grid is identical with planar gate high voltage power device, compares planar gate device, and it is less that the structure cell 61 of groove-gate MOSFETs can do, thus reduce chip area, reduction process costs.Fig. 4 is shallow slot grid provided by the invention horizontal high voltage power semiconductor device architecture profile.When shallow slot gate device is withstand voltage, the electric field in drift region, easily in the sharp corner concentrations of groove oxide layer 23, as C point in figure, causes device to puncture in advance.
Fig. 5 is deep trouth grid provided by the invention horizontal high voltage power semiconductor device architecture profile, and deep trouth gate device and shallow slot gate device, structurally except the depth of groove grid, do not have other to distinguish, and wherein the groove grid of deep trouth gate device have extended in P type substrate 1.Compare shallow slot gate device, as Fig. 4, deep trouth gate device has the advantage of several aspect, on the one hand, deep trouth grid and N-type drift region 31 form MIS(Metal Insulator Semiconductor) electric capacity, during OFF state, MIS electric capacity makes N-type drift region 31 and groove oxide layer 23 interface accumulate a large amount of hole, assisted depletion N-type drift region, optimised devices longitudinal electric field; On the other hand, during ON state, the effect of MIS electric capacity, makes N-type drift region 31 and groove oxide layer 23 interface accumulate a large amount of electronics, increases the concentration of N-type drift region, for ON state current provides low impedance path, thus reduces device on-resistance; Again on the one hand, groove grid are goed deep in P type substrate 1, the electric field concentrations of sharp corner bottom groove oxide layer 23 can be avoided, as D point in figure, thus improve the puncture voltage of device; Finally, deep trouth grid can also play the buffer action between device.
Fig. 6 is a kind of planar gate provided by the invention horizontal high voltage power semiconductor device architecture profile, and the terminal structure 62 of device comprises media slot 2, N-type drift region 31 and N-type heavy doping drain contact region 33, but does not comprise N-type doping bar 34.The relation of the withstand voltage and conducting resistance of this structure does not have the structure optimization of Fig. 2, this is because N-type doping bar 34 not only provides ionized donor electric charge positive in a large number, the electric field line distribution in modulated media groove when OFF state, avoid drain terminal electric field line concentrations.When ON state, N-type doping bar can also provide low impedance path for ON state current, reduces device on-resistance.
Fig. 7 is a kind of novel transversal I GBT device architecture profile provided by the invention, be integrated in P type substrate 1, comprise N-type drift region 31, P type tagma 41, N-type heavy doping emitter contact zone 32, P type heavy doping emitter contact zone 42, media slot 2, P type doping bar 43, N-type doping bar 34 and P type heavy doping collector contact district 44; Be N-type doping bar 34 below P type heavy doping collector contact district 44, the left side of N-type doping bar 34 is media slot 2; Gate oxide 21 is polygate electrodes 51 above, and emitter metal 56 is positioned at above P type tagma 41, and collector electrode metal 57 is positioned at surface, P type heavy doping collector contact district 44; Polygate electrodes 51, between emitter metal 56 and collector electrode metal 57 by dielectric layer 22 mutually isolated.Adopt structure of the present invention, the collector electrode of conventional I GBT device laterally can be drawn from bottom device, gate electrode, emitter and collector, all on surface, make device be easy to integrated with custom circuit, adopt terminal structure 62 laterally withstand voltage simultaneously, can greatly reduce element layout area.
Fig. 8 is planar gate provided by the invention horizontal high voltage power semiconductor device architecture profile, the integrated multiple longitudinal superjunction structure cell 61 of device.Introduce P type doping bar 43 in the N-type drift region 31 of longitudinal superjunction structure cell, form longitudinal super-junction structure, and add the concentration of N-type drift region.During ON state, higher N-type drift region concentration reduces the conducting resistance of device, and during OFF state, P type doping bar 43 assisted depletion N-type drift region 31, optimised devices longitudinal electric field, improves device electric breakdown strength.Multiple structure cell shares a terminal structure 62, greatly reduces element layout area, thus reduces process costs.Introduce N-type doping bar 34 in terminal structure, the contradictory relation between the withstand voltage of device and conducting resistance can be alleviated further.
Fig. 9 is the horizontal high voltage power semiconductor device profile maps of groove grid provided by the invention, the integrated multiple longitudinal superjunction structure cell 61 of device.Except the structure difference of gate electrode, the structure of slot grid structure device and Fig. 8 does not have other difference, and operation principle is also identical.Compare planar gate, it is less that the structure cell of slot grid structure does, and further can reduce chip area.
In order to make technical problem to be solved by this invention, technical scheme and beneficial effect clearly understand, take Fig. 2 as embodiment, and contrast with traditional structure, the present invention is described in further detail.
As shown in Figure 2, the horizontal high voltage power semiconductor device of planar gate provided by the invention comprises longitudinal superjunction structure cell 61 and terminal knot 62, and wherein, N-type drift region 31 introduces P type doping bar 43 and N-type doping bar 34.The P type doping bar 43 introduced and N-type drift region 31 form longitudinal super-junction structure, P type doping bar assisted depletion N-type drift region, and introduce a longitudinal electric field peak value, optimised devices longitudinal electric field, improve device longitudinally withstand voltage.The P type doping bar 43 exhausted and N-type doping bar 34 are respectively N-type drift region provides ionization acceptor charge and ionized donor electric charge, the Electric Field Distribution in optimized medium groove, alleviates the concentrations of drift region electric field at source and drain terminal, improves the puncture voltage of device.During ON state, N-type doping bar provides low impedance path for ON state current, reduces device on-resistance.Figure 10 (b) gives potential profile when lateral high-voltage device provided by the invention punctures, and wherein, the concentration of N-type drift region 31 is 2e15cm
-3, the degree of depth is 25 microns, the width of media slot 29 microns, the degree of depth 20 microns, the concentration of N-type doping bar 34 is 1.3e16cm
-3, P type doping bar concentration 3.2e16cm
-3, N-type doping bar and P type doping bar width are 0.5 micron, and P type substrate concentration is 1.5e14cm
-3.By scheming, in device body, the potential line distribution of source and drain terminal is comparatively even, and distributional class is like the Potential Distributing of longitudinal super-junction structure below source electrode and drain electrode for drift region potential lines, and P type substrate exhausts 55 microns nearly.Figure 10 (a) is the potential profile of traditional lateral high-voltage device when puncturing, and wherein, N-type drift region concentration is 5e14cm
-3, P type substrate exhausts only 35 microns.Compared with structure of the present invention, the potential lines of tradition lateral high-voltage device is at source electrode and drain electrode comparatively dense, more more sparse toward the distribution of body built-in potential line, device is caused easily to puncture with the interface contacted with media slot 2 that drains at source electrode, as the A point in Fig. 3 (a) and B point, therefore device withstand voltage is lower.Meanwhile, Comparatively speaking, the substrate-assisted depletion effect of structure of the present invention is comparatively obvious, and device has better longitudinally withstand voltage.
The Electric Field Distribution when analysis device of a nearlyer step punctures, Figure 11 be traditional horizontal high voltage power device and horizontal high voltage power semiconductor device breakdown provided by the invention time transverse electric field distribution, in figure, solid-line curve is the transverse electric field distribution of structure of the present invention, and hollow curve is the transverse electric field distribution of traditional lateral high-voltage device.Compare traditional structure, in the surface field of structure of the present invention and body, transverse electric field increases all greatly, this is because, when the P type doping bar 43 introduced and N-type doping bar 34 exhaust, negative ionization acceptor charge and positive ionized donor electric charge is introduced in media slot both sides, electric field in modulated media groove is in the distribution of source and drain terminal, and avoid electric field line in source and drain terminal concentrations, device punctures in advance.Meanwhile, introduce two new electric field spike amplified medium groove electric fields, thus improve the withstand voltage of device.Figure 10 is potential profile when emulating by MEDICI two-dimensional device the two kinds of device breakdown provided, and the electrical potential difference of every two equipotential liness is 20V, and the withstand voltage of traditional structure only has 400V, and its conducting resistance is 370m Ω cm nearly
-2, and structure of the present invention is withstand voltage up to 715V, but conducting resistance only has 55m Ω cm
-2, structure of the present invention has broken the traditional silicon limit, while obtaining high puncture voltage, greatly reduces conducting resistance.
Horizontal high voltage power semiconductor device provided by the invention is made up of structure cell and terminal structure, and cellular adopts longitudinal super-junction structure not only to alleviate withstand voltage BV and conducting resistance R
on, sprelation, simultaneously greatly reduce element layout area, reduce process costs.The P type doping bar remaining negative ionization acceptor charge on the left of media slot exhausted, the distribution of modulated media groove electric field, avoids electric field line in source concentrations, causes device to puncture in advance.Terminal structure comprises media slot 2 and N-type doping bar 34, adopts that media slot is withstand voltage can reduce chip area further.The introducing of N-type doping bar, for ON state current provides low impedance path, further reduction device on-resistance, during OFF state, the ionized donor impurity that the N-type doping bar exhausted is remaining on the right side of media slot, the drain terminal electric field of optimized medium groove, avoids device to puncture in drain electrode in advance, improves the puncture voltage of device further.Meanwhile, N-type doping bar and P type doping bar introduce two new electric field spikes, and increase silicon interface electric field, make media slot electric-field enhancing, device withstand voltage improves.Device can adopt the structures such as planar gate, groove grid or V-type grid, can also integrated single or multiple structure cell.Lateral high-voltage device provided by the invention, is integrated in P type substrate, can assisted depletion N-type drift region further, and optimised devices longitudinal electric field, improves the puncture voltage of device further.
Claims (3)
1. a horizontal high voltage power semiconductor device, comprises at least one longitudinal superjunction structure cell (61) and terminal structure (62); When described horizontal high voltage power semiconductor device comprises multiple longitudinal superjunction structure cell (61) and terminal structure (62), multiple longitudinal superjunction structure cell (61) along device transverse direction or Width together tightly packed, form overall longitudinal superjunction structure cell; Described terminal structure (62) is positioned at outside or the periphery of overall structure cell;
Described longitudinal superjunction structure cell (61) comprises the N-type drift region (31) being positioned at P type substrate (1) surface, be positioned at the P type tagma (41) of N-type drift region (31) side, top, have in P type tagma (41) respectively with the P being positioned at device surface source metal (52) and being connected
+source contact area (42) and N
+source contact area (32); In the N-type drift region (31) of below, P type tagma (41), there is P type doping bar (43), P type doping bar (43) and the N-type drift region (31) on side form super-junction structure, and the N-type drift region (31) below super-junction structure and super-junction structure forms the drift region with part super-junction structure; Grid structure is made up of gate oxide (23) and polygate electrodes (51), wherein gate oxide (23) contacts with N-type drift region (31) and P type tagma (41), mutually isolated by dielectric layer (22) between polygate electrodes (51) and source metal (52);
Described terminal structure (62), comprises N-type drift region (31), N-type doping bar (34), N-type heavy doping drain contact region (33) and media slot (2); In terminal structure (62), the side, top of N-type drift region (31) is the N-type heavy doping drain contact region (33) be connected with drain metal (53), N-type doping bar (34) is arranged in the N-type drift region (31) of below, N-type heavy doping drain contact region (33), and contacts with N-type heavy doping drain contact region (33); Media slot (2) is positioned between P type doping bar (43) of N-type doping bar (34) and described longitudinal superjunction structure cell (61), media slot (2) and N-type doping bar (34) below reserve part N-type drift region (31) are as current channel, mutually isolated by dielectric layer (22) between drain metal (53) and source metal (52).
2. horizontal high voltage power semiconductor device according to claim 1, is characterized in that, described grid structure is planar gate, groove grid or V-type grid.
3. horizontal high voltage power semiconductor device according to claim 1, it is characterized in that, N-type heavy doping drain contact region (33) in described terminal structure (62) P type heavy doping collector contact district (44) is replaced, transversal I GBT device can be obtained.
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| CN103545220A (en) * | 2013-10-30 | 2014-01-29 | 电子科技大学 | Method for manufacturing drifting region of transverse power device |
| CN103545219A (en) * | 2013-10-30 | 2014-01-29 | 电子科技大学 | Manufacturing method of drift region of semiconductor device |
| CN104241365A (en) * | 2014-04-10 | 2014-12-24 | 电子科技大学 | SOI horizontal power MOSFET device |
| CN103956380A (en) * | 2014-05-19 | 2014-07-30 | 淄博美林电子有限公司 | IGBT chip and manufacturing method thereof |
| US10340332B2 (en) * | 2016-09-17 | 2019-07-02 | University Of Electronic Science And Technology Of China | Folded termination with internal field plate |
| CN106972061A (en) * | 2017-05-08 | 2017-07-21 | 工业和信息化部电子第五研究所华东分所 | A kind of electronic device and preparation method thereof |
| CN107134481A (en) * | 2017-05-08 | 2017-09-05 | 工业和信息化部电子第五研究所华东分所 | A kind of electronic component and preparation method thereof |
| CN107425067A (en) * | 2017-05-08 | 2017-12-01 | 工业和信息化部电子第五研究所华东分所 | A kind of new electronic component and preparation method thereof |
| CN107452805A (en) * | 2017-07-18 | 2017-12-08 | 电子科技大学 | A kind of LDMOS device with low on-resistance high withstand voltage |
| CN109119461B (en) * | 2018-08-28 | 2020-09-29 | 电子科技大学 | Super-junction MOS type power semiconductor device and preparation method thereof |
| CN109585563B (en) * | 2018-11-20 | 2021-09-24 | 电子科技大学 | Groove-shaped transverse pressure-resistant area with strontium titanate film |
| CN110600454B (en) * | 2019-09-29 | 2021-03-23 | 南京芯长征科技有限公司 | Low EMI deep trench isolation trench type power semiconductor device and preparation method thereof |
| CN110676306B (en) * | 2019-09-29 | 2022-11-25 | 江苏芯长征微电子集团股份有限公司 | Low EMI deep trench isolation plane power semiconductor device and preparation method thereof |
| CN114695516B (en) * | 2022-03-02 | 2023-04-25 | 电子科技大学 | Semiconductor voltage-resistant layer structure |
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