CN103022134B - A kind of horizontal high voltage power device of SOI of Ultra-low Specific conducting resistance - Google Patents
A kind of horizontal high voltage power device of SOI of Ultra-low Specific conducting resistance Download PDFInfo
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- CN103022134B CN103022134B CN201210518182.2A CN201210518182A CN103022134B CN 103022134 B CN103022134 B CN 103022134B CN 201210518182 A CN201210518182 A CN 201210518182A CN 103022134 B CN103022134 B CN 103022134B
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Abstract
The horizontal high voltage power device of SOI of Ultra-low Specific conducting resistance, belongs to power semiconductor device technology field.Comprise longitudinal superjunction structure cell and terminal structure, terminal structure is positioned at outside or the periphery of overall structure cell; Element manufacturing is on the soi layer of SOI material.Longitudinal superjunction structure cell reduces conduction resistance while raising puncture voltage, and reduces chip area; Single or multiple cellular is integrated, and multiple cellular in parallel can share same terminal, and is laterally drawn by drain electrode by drain electrode deriving structure, make drain electrode, grid and source electrode all on surface, not only be easy to integrated with custom circuit, and greatly reduce chip area, reduce process costs further; In addition, adopt thinner oxygen buried layer can increase device longitudinal electric field, can effectively slow down device self-heating effect simultaneously.
Description
Technical field
The invention belongs to semiconductor power device technology field, relate to a kind of horizontal high voltage power device of SOI of Ultra-low Specific conducting resistance.
Background technology
Silicon SOI (Silicon On Insulator) on insulating barrier is a kind of new material for IC manufacturing, can replace the body silicon widely applied at present.Horizontal high voltage power device LDMOS (Lateral Double-diffused Metal OxideSemiconductor) has extremely important purposes in power integrated circuit and smart power circuits, the drain electrode of this kind of device, source electrode and grid are all at chip surface, connect with low-voltage signal circuit integrated easily through inside, simplify the drive circuit of power device.With the LDMOS of SOI material manufacture, there is good isolation performance, less parasitic capacitance and leakage current, and technique and CMOS (Complementary Metal Oxide Semiconductor) process compatible, relative bulk-silicon LDMOS technique is more simple, can be widely used in high frequency, the high power fields such as communication, power power-supply, motor driving and automotive electronics.In order to realize high puncture voltage, traditional SOILDMOS requires that it has lower doping content and higher thickness for bearing withstand voltage drift region, but in order to reduce the conduction resistance of device, require that again the drift region as current channel has high doping content.Use longer lightly doped drift region and thick oxygen buried layer can improve the puncture voltage of device, but this is by the conducting area of increased device, causes the conduction resistance of device increase and produce serious self-heating effect.MOS (the Metal Oxide Semiconductor) conduction resistance of class device and the contradictory relation of device withstand voltage limit the application of such device in high-voltage great-current field.In order to shorten the drift region length of device, people propose the structure of grooved drift region, as Fig. 1.By the withstand voltage length shortening drift region of groove oxide layer 24, and then reduce the conduction resistance of device.But due to quoting of groove, although drift region length shortens, the path of carrier flow bends, though lower drift region concentration makes the conduction resistance of device be improved, but still larger.
Summary of the invention
The technical problem to be solved in the present invention is, be obtain the high withstand voltage drift region adopted compared with low doping concentration for the horizontal high voltage power device of traditional SOI, device conduction resistance is caused to increase, and adopt thick oxygen buried layer to bring the problems such as remarkable self-heating effect, strengthen the theory of ENBULF (Enhanced Bulk Field) based on bulk electric field, propose a kind of horizontal high voltage power device of SOI of low Ultra-low Specific conducting resistance.Introduce longitudinal P bar and N bar reduction chip area in this device one side drift region, alleviate device conduction resistance and withstand voltage contradictory relation; Adopt thin oxygen buried layer thickness can increase device longitudinal electric field on the other hand, can effectively slow down device self-heating effect simultaneously; Again on the one hand, P type doping bar assisted depletion, the drift region concentration of increased device thus reduce device conduction resistance.In addition, the present invention can adopt single or multiple cellular integrated, multiple cellular in parallel can share same terminal, and by drain metal, drain electrode is laterally drawn, make drain electrode, grid and source electrode all on surface, not only be easy to integrated with custom circuit, and greatly reduce chip area, reduce process costs further.
Technical solution of the present invention is:
The horizontal high voltage power device of the SOI of Ultra-low Specific conducting resistance, as shown in Figure 2, comprises at least one or more than one longitudinal superjunction structure cell 11 and terminal structure 12; Multiple longitudinal superjunction structure cell 11 along device transverse direction or Width together tightly packed, form overall longitudinal superjunction structure cell; Described terminal structure 12 is positioned at outside or the periphery of overall structure cell.Described longitudinal superjunction structure cell 11 and terminal structure 12 are made on the soi layer 26 of SOI material, and described SOI material comprises substrate layer 34, oxygen buried layer 25 and soi layer 26, and wherein oxygen buried layer 25 is positioned in the middle of substrate layer 34 and soi layer 26.
Described longitudinal superjunction structure cell 11 comprises N-type drift region 43, is positioned at the P type trap zone 31 of N-type drift region 43 top outer, is arranged in P type trap zone 31 and the P contacted with source metal 51
+source contact area 33 and N
+source contact area 41, there is in N-type drift region 43 below P type trap zone 31 P type doping bar 32, P type doping bar 32 forms super-junction structure with the N-type drift region 43 on side, and the N-type drift region 43 below super-junction structure and super-junction structure forms the drift region with part super-junction structure; Grid structure is made up of gate oxide 21 and polygate electrodes 52, and wherein gate oxide 21 contacts with N-type drift region 43 and P type trap zone 31, mutually isolated by dielectric layer 23 between polygate electrodes 52 and source metal 51.
Described terminal structure 12 comprises N-type drift region 43, N-type doping bar 42, N-type heavy doping drain contact region 44 and media slot 24; In terminal structure 12, the side, top of N-type drift region 43 is the N-type heavy doping drain contact region 44 be connected with drain metal 53, N-type doping bar 42 is arranged in the N-type drift region 43 below N-type heavy doping drain contact region 44, and contacts with N-type heavy doping drain contact region 44; Media slot 24 is between N-type doping bar 42 and the P type doping bar 32 of described longitudinal superjunction structure cell 11, media slot 24 and N-type doping bar 42 below reserve part N-type drift region 43 as current channel, between drain metal 53 and source metal 51 by dielectric layer 23 mutually isolated.
The horizontal high voltage power device of SOI of Ultra-low Specific conducting resistance provided by the invention comprises structure cell 11, terminal structure 12; In primitive cell structure 11, P type doping bar 32 and N-type type drift region 43 form longitudinal super-junction structure, alleviate the contradictory relation between device electric breakdown strength and conduction resistance; Shown in Fig. 2 (b), the one or more cellular of device accessible site, the cellular of multiple parallel connection can share a terminal structure 12, and drawn by drain metal 53, the drain electrode of device is laterally drawn, not only greatly reduces domain, reduce process costs, and can be integrated with custom circuit, applying flexible; The horizontal high voltage power device of SOI provided by the invention can adopt the structures such as planar gate, groove grid or V-type grid.
The horizontal high voltage power device of SOI of Ultra-low Specific conducting resistance provided by the invention, wherein oxygen buried layer 25 electromotive force is by super-junction structure clamper longitudinal below source electrode, oxygen buried layer 25 upper and lower surface is caused to accumulate a large amount of hole and electronics respectively, the direction of an electric field that these electron hole pairs produce is identical with the direction of an electric field of substrate 34 with N-type drift region 43, make the comparable common SOI lateral high-voltage device of the thickness of oxygen buried layer 25 thinner, slow down the self-heating effect of device.There is the inversion charge of accumulation two interfaces of oxygen buried layer 25, and oxygen buried layer 25 electric field is increased.
Operation principle of the present invention can be described below:
The horizontal high voltage power device of SOI of described Ultra-low Specific conducting resistance can adopt the structures such as planar gate, groove grid or V-type grid, and the operation principle of these structures is all similar.
As shown in Fig. 2 (a), the horizontal high voltage power device of SOI of Ultra-low Specific conducting resistance comprises P type trap zone 31, P
+source contact area 33, N
+source contact area 41, N
+drain contact region 44, P type doping bar 32, N-type doping bar 42, N-type drift region 43; Wherein P type doping bar 32 and N-type drift region 43 constitute longitudinal super-junction structure.The horizontal high voltage power device of the SOI of described Ultra-low Specific conducting resistance can integrated single or multiple cellular, and multiple cellular can share same terminal, and is laterally drawn by drain electrode.
The horizontal high voltage power device of the SOI of Ultra-low Specific conducting resistance provided by the invention withstand voltage comprises laterally withstand voltage and longitudinal withstand voltage, wherein laterally withstand voltage, determined by device lateral terminal structure 12, longitudinally withstand voltage longitudinal super-junction structure by cellular and oxygen buried layer 25 thickness determine.When device drain applies high voltage, the PN junction metallurgical junction face that P type trap zone 31 and N-type drift region 43 are formed starts to exhaust, expanding to N-type drift region 43 along with drain voltage increases depletion region, there is peak electric field in the PN junction metallurgical junction face that P type trap zone 31 and N-type drift region 43 are formed.Simultaneously, remaining ionization acceptor charge in the P type doping bar 32 exhausted, Electric Field Distribution in modulation device body, avoid electric field line in source concentrations, and introduce new peak electric field in the interface of P type doping bar 32 and media slot 24, amplified medium groove 24 body internal electric field, improves device laterally withstand voltage further.When device forward is withstand voltage, because the concentration of N-type doping bar 42 is higher, can low impedance path be provided, reduce the conduction resistance of device; When device reverse withstand voltage time, N-type doping bar 42 provide a large amount of positive charge, the electric field line distribution of modulated media groove 24, reduce peak electric field, improve device withstand voltage.The present invention introduces media slot 24 in N-type drift region 43, can strengthen electric field strength, and media slot 24 forms folding drift region simultaneously, can reduce active region area, significantly can reduce conduction resistance.
The oxygen buried layer 25 Thickness Ratio common SOI high voltage power device of the horizontal high voltage power device of SOI of Ultra-low Specific conducting resistance provided by the invention is thin, can slow down the self-heating effect of device.This is because when device drain terminal connects high potential, when source and substrate connecting to neutral current potential, the electromotive force of oxygen buried layer 25 is by super-junction structure clamper longitudinal below source electrode, oxygen buried layer 25 upper surface is caused to accumulate a large amount of hole, and lower surface accumulates a large amount of electronics, the direction of an electric field that these electron hole pairs produce is identical with the direction of an electric field of substrate 34 with N-type drift region 43, thus makes the thickness of oxygen buried layer 25 can be thinner than common SOI lateral high-voltage device, thus slows down the self-heating effect of device.Along with the thickness of oxygen buried layer 25 changes, the field effect of oxygen buried layer 25 amplified medium occurs, and two of oxygen buried layer 25 interfaces there is inversion charge to accumulate, and oxygen buried layer 25 electric field is increased.And the horizontal high voltage power device of traditional SOI adopts thicker oxygen buried layer 25, the heat that active area produces cannot import matrix, device temperature is caused to raise, carrier mobility reduces, there is the self-heating effects such as negative conductance, hinder further developing and applying, particularly in high temperature and high pressure field of SOI technology.In addition, the P type doping bar 32 that the present invention introduces and N-type drift region 43 form longitudinal super-junction structure, and P type doping bar 32 assisted depletion N-type drift region 43, optimised devices longitudinal electric field, improves device longitudinally withstand voltage.
Advantage of the present invention is as follows:
1) the single or multiple structure cell of accessible site of the present invention, the cellular of multiple parallel connection can share same terminal structure 12, and is laterally drawn by drain electrode by drain metal, makes grid, drain electrode and source electrode all on surface, not only be easy to integrated with custom circuit, greatly reduce chip area simultaneously.
2) the present invention can be the structures such as planar gate, groove grid or V-type grid.
3) the P type doping bar 32 that proposes of the present invention and N-type drift region 43 form longitudinal super-junction structure, alleviate the contradictory relation of device electric breakdown strength and conduction resistance.
4) the P type doping bar 32 that proposes of the present invention and N-type doping bar 42 introduce two new electric field spikes in N-type drift region 43, make the Electric Field Distribution of N-type drift region 43 be similar to the Electric Field Distribution of vertical super-junction under source and drain.Meanwhile, the extra electric field that P type doping bar 32 and N-type doping bar 42 produce, adds the electric field of groove oxide layer 24, and shortens the active area of device, then reduce the area of whole device.
5) the present invention introduces media slot 24 in N-type drift region 43, media slot 24 can strengthen electric field strength, and media slot 24 forms folding drift region simultaneously, can reduce active region area, significantly can reduce conduction resistance, simulation result shows that the conduction resistance of device can be less than 60m Ω cm
2, optimal voltage can more than 650V, and this has broken traditional silicon limit.
6) the Thickness Ratio common SOI high voltage power device of oxygen buried layer 25 of the present invention is thin, can slow down the self-heating effect of device.In addition, two interfaces of oxygen buried layer 25 have inversion charge to accumulate, and make oxygen buried layer 25 electric field more than 500V/mm.
Accompanying drawing explanation
Fig. 1 is the horizontal high-voltage power device structure profile of traditional SOI, introduces media slot 24, for reducing the conduction resistance of device in N-type drift region 43.
Fig. 2 is the horizontal high-voltage power device structure schematic diagram of plane grid-type SOI with Ultra-low Specific conducting resistance provided by the invention.Wherein, (a) is the device architecture schematic diagram of an integrated cellular; B () is the device architecture schematic diagram of integrated multiple cellular.
Fig. 3 is the plane grid-type SOI horizontal high voltage power device transverse electric field schematic diagram with Ultra-low Specific conducting resistance provided by the invention.Wherein (a) is device transverse electric field schematic diagram of the present invention; (b) traditional devices transverse electric field schematic diagram.
Fig. 4 is the plane grid-type SOI horizontal high voltage power device longitudinal electric field schematic diagram with Ultra-low Specific conducting resistance provided by the invention.
Fig. 5 is the plane grid-type SOI horizontal high voltage power device body built-in potential distribution schematic diagram with Ultra-low Specific conducting resistance provided by the invention.Wherein (a) is device body built-in potential schematic diagram of the present invention, A to be media slot 24 with source contact, B be media slot 24 and P type adulterate bar 32 contact point, C to be media slot 24 with drain contact, D is media slot 24 edge a bit; B () is traditional devices body built-in potential schematic diagram, A ', B ', C ', D ' correspond respectively to A, B, C, D in structure of the present invention 4 point.
Fig. 6 is the silicon distribution map of the electric field of the horizontal high voltage power device of plane grid-type SOI around media slot 24 surface with Ultra-low Specific conducting resistance provided by the invention.A to be media slot 24 with source contact, B be media slot 24 and P type adulterate bar 32 contact point, C to be media slot 24 with drain contact, D is media slot 24 edge a bit, A ', B ', C ', D ' correspond respectively to A, B, C, D in structure of the present invention 4 point.
Fig. 7 is the relation schematic diagram of the horizontal high voltage power device conduction resistance of SOI and puncture voltage.
Fig. 8 is the horizontal high-voltage power device structure schematic diagram of shallow slot grid-type SOI with Ultra-low Specific conducting resistance provided by the invention.Wherein, (a) is the device architecture schematic diagram of an integrated cellular; B () is the device architecture schematic diagram of integrated multiple cellular.
Fig. 9 is the horizontal high-voltage power device structure schematic diagram of deep trouth grid-type SOI with Ultra-low Specific conducting resistance provided by the invention.Wherein, (a) is the device architecture schematic diagram of an integrated cellular; B () is the device architecture schematic diagram of integrated multiple cellular.
Figure 10 is the horizontal high-voltage power device structure schematic diagram of plane grid-type SOI with Ultra-low Specific conducting resistance provided by the invention, and 35 is P
+drain contact region, forms LIGBT (Lateral Insulated Gate Bipolar Transistor) structure.Wherein, (a) is the device architecture schematic diagram of an integrated cellular; B () is the device architecture schematic diagram of integrated multiple cellular.
Embodiment
The horizontal high voltage power device of the SOI of Ultra-low Specific conducting resistance, as shown in Figure 2, comprises at least one or more than one longitudinal superjunction structure cell 11 and terminal structure 12; Multiple longitudinal superjunction structure cell 11 along device transverse direction or Width together tightly packed, form overall longitudinal superjunction structure cell; Described terminal structure 12 is positioned at outside or the periphery of overall structure cell.Described longitudinal superjunction structure cell 11 and terminal structure 12 are made on the soi layer 26 of SOI material, and described SOI material comprises substrate layer 34, oxygen buried layer 25 and soi layer 26, and wherein oxygen buried layer 25 is positioned in the middle of substrate layer 34 and soi layer 26.
Described longitudinal superjunction structure cell 11 comprises N-type drift region 43, is positioned at the P type trap zone 31 of N-type drift region 43 top outer, is arranged in P type trap zone 31 and the P contacted with source metal 51
+source contact area 33 and N
+source contact area 41, there is in N-type drift region 43 below P type trap zone 31 P type doping bar 32, P type doping bar 32 forms super-junction structure with the N-type drift region 43 on side, and the N-type drift region 43 below super-junction structure and super-junction structure forms the drift region with part super-junction structure; Grid structure is made up of gate oxide 21 and polygate electrodes 52, and wherein gate oxide 21 contacts with N-type drift region 43 and P type trap zone 31, mutually isolated by dielectric layer 23 between polygate electrodes 52 and source metal 51.
Described terminal structure 12 comprises N-type drift region 43, N-type doping bar 42, N-type heavy doping drain contact region 44 and media slot 24; In terminal structure 12, the side, top of N-type drift region 43 is the N-type heavy doping drain contact region 44 be connected with drain metal 53, N-type doping bar 42 is arranged in the N-type drift region 43 below N-type heavy doping drain contact region 44, and contacts with N-type heavy doping drain contact region 44; Media slot 24 is between N-type doping bar 42 and the P type doping bar 32 of described longitudinal superjunction structure cell 11, media slot 24 and N-type doping bar 42 below reserve part N-type drift region 43 as current channel, between drain metal 53 and source metal 51 by dielectric layer 23 mutually isolated.
The present invention is by introducing longitudinal P type doping bar 32, N-type doping bar 42 and media slot 24 in N-type drift region 43, reduce chip area, alleviate the contradictory relation of conduction resistance and device withstand voltage, simultaneously, P type doping bar 32 assisted depletion N-type drift region 43, N-type drift region 43 concentration of increased device thus reduce device conduction resistance.In addition, thin oxygen buried layer 25(thickness is adopted to be no more than 0.5 micron) can effectively slow down device self-heating effect.Adopt the present invention can manufacture the power device of various function admirable, there is the feature of high withstand voltage, high integration, low conduction loss, low self-heating effect.
The horizontal high voltage power device of SOI of Ultra-low Specific conducting resistance provided by the invention comprises structure cell 11, terminal structure 12; In structure cell 11, P type doping bar 32 and N-type type drift region 43 form longitudinal super-junction structure, alleviate the contradictory relation between device electric breakdown strength and conduction resistance; Shown in Fig. 2 (b), the one or more cellular of device accessible site, the cellular of multiple parallel connection can share a terminal structure 12, and drawn by drain metal 53, the drain electrode of device is laterally drawn, not only greatly reduces domain, reduce process costs, and can be integrated with custom circuit, applying flexible;
The horizontal high voltage power device of SOI of Ultra-low Specific conducting resistance provided by the invention can adopt the structures such as planar gate, groove grid or V-type grid.Opposite planar grid, that selects the cellular of groove-gate MOSFETs to do is less, because groove grid have longitudinal channel, channel length is determined by the junction depth of P type trap zone 31, and the channel length of planar gate is determined by the length of P type trap zone 31.
Fig. 3 is the plane grid-type SOI horizontal high voltage power device transverse electric field schematic diagram with Ultra-low Specific conducting resistance provided by the invention, because the present invention introduces P type doping bar 32 and N-type doping bar 42, as shown in Fig. 3 (a), the introducing of P type doping bar 32 adds the concentration of N-type drift region 43, thus reduce the conduction resistance of device, meanwhile, the N-type doping bar 42 of high concentration provides low impedance path for ON state current, reduces the conduction resistance of device.During OFF state, P type doping bar 32 assisted depletion N-type drift region 43, introduces new electric field spike in the interface of N-type drift region 43 and media slot 24, improves silicon electric field, thus make media slot 24 electric-field enhancing, then improve the puncture voltage of device.The P type doping bar 32 that the present invention introduces is introduced and is ionized acceptor charge in a large number on the left of media slot 24, and modulated media groove 24 internal electric field line, in the distribution of source, avoids electric field line in source electrode concentrations, prevents device from puncturing at A point in advance.Same, the N-type doping bar 42 that the present invention introduces introduces a large amount of ionized donor electric charge on the right side of media slot 24, and modulated media groove 24 internal electric field line, in the distribution of drain terminal, avoids electric field line in drain electrode concentrations, prevent device from puncturing at B point in advance, thus improve the withstand voltage of device.So compare the horizontal high voltage power device of traditional SOI without P type doping bar 32 and N-type doping bar 42, as shown in Fig. 3 (b), the electric field of media slot 24 has remarkable increase.
Fig. 4 is the longitudinal electric field distribution map with the horizontal high voltage power device of plane grid-type SOI of Ultra-low Specific conducting resistance provided by the invention.The longitudinal direction strengthening the theoretical horizontal high voltage power device of electric field raising SOI by strengthening oxygen buried layer 25 based on bulk electric field is withstand voltage.The electromotive force of oxygen buried layer 25 is by super-junction structure clamper longitudinal below source electrode, oxygen buried layer 25 upper and lower surface is caused to accumulate a large amount of hole and electronics respectively, the direction of an electric field that these electron hole pairs produce is identical with the direction of an electric field of substrate 34 with N-type drift region 43, make the Thickness Ratio of oxygen buried layer 25 common SOI lateral high-voltage device thinner, slow down the self-heating effect of device.Because two interfaces of oxygen buried layer 25 have inversion charge to accumulate, oxygen buried layer 25 electric field is increased.
Fig. 5 is SOI horizontal high voltage power device Potential Distributing schematic diagram.Figure (a) is the potential profile with the horizontal high voltage power device of plane grid-type SOI of Ultra-low Specific conducting resistance provided by the invention, select media slot 24 and source contact A, the bar 32 contact point B that adulterate with P type, and drain contact C and media slot 24 edge's point D, can find out that Potential Distributing is comparatively even, the potential line distribution of source electrode and the similar longitudinal super-junction structure of potential lines under draining.This is because the P type doping bar 32 introduced of the present invention and N-type drift region 43 form longitudinal super-junction structure, P type doping bar 32 assisted depletion N-type drift region 43, and introduce a longitudinal electric field peak value, can optimised devices longitudinal electric field, improve device longitudinally withstand voltage.The P type doping bar 32 of depletion type and N-type doping bar 42 are respectively N-type drift region 43 and provide ionized donor and ionization acceptor, optimize the Electric Field Distribution of media slot 24, alleviate N-type drift region 43 electric field in source and drain terminal concentrations, thus increase device withstand voltage.Figure (b) is the potential profile of the horizontal high voltage power device of traditional SOI, A ', B ', C ', D ' correspond respectively to A, B, C, D 4 point of structure of the present invention, compared with the present invention, the potential lines of device is more concentrated at an A ', D ', more more sparse toward the distribution of body built-in potential line, cause device easily to puncture with the interface of groove oxide layer 43 at source electrode and drain electrode.Simulation result surface, device electric breakdown strength of the present invention can up to 684V, and the puncture voltage of traditional structure only has 389V.
Fig. 6 is the silicon distribution map of the electric field of the horizontal high voltage power device of SOI around groove oxide layer 24 surface.A, B, C, D are 4 points selected in Fig. 5, and A ', B ', C ', D ' correspond respectively to A, B, C, D in structure of the present invention 4 point.P type doping bar 32 assisted depletion N-type drift region 43 when device OFF state that the present invention introduces, new electric field spike is introduced in the interface of N-type drift region 43 and media slot 24, improve silicon electric field, thus make thimble groove 24 electric-field enhancing, then the puncture voltage of device is improved, so compared with the horizontal high voltage power device of traditional SOI, device withstand voltage is significantly improved.
Fig. 7 is the relation schematic diagram of the horizontal high voltage power device conduction resistance of SOI and puncture voltage.The present invention introduces media slot 24 in N-type drift region 43, media slot 24 can strengthen electric field strength, media slot 24 forms folding drift region simultaneously, reduce active region area, conduction resistance significantly reduces, meanwhile, P type doping bar 32 assisted depletion N-type drift region 43, the concentration of increased device N-type drift region 43 thus reduce conduction resistance.Meanwhile, the N-type doping bar 42 of high concentration provides low impedance path for ON state current, reduces the conduction resistance of device further.Simulation result shows that the conduction resistance of device can be less than 60m Ω cm
2, optimal voltage can more than 650V, and this has broken traditional silicon limit.
Fig. 8 (a) is the horizontal high-voltage power device structure profile of shallow slot grid-type SOI of the Ultra-low Specific conducting resistance of an integrated cellular provided by the invention.Device is the multiple cellular of accessible site also, as shown in Fig. 8 (b).Cellular 11 adopts P type doping bar 32 and N-type drift region 43 to form longitudinal super-junction structure; Polygate electrodes 52 periphery is groove gate oxide 22; Terminal structure 12 comprises N-type doping bar 42 and media slot 24; Drain metal 53 is positioned at N
+above drain contact region 44, mutually isolated by dielectric layer 23 between drain metal 53 and source metal 51.Except grid structure is different, other formations of device all can adopt the technique identical with Fig. 2 to realize.
Fig. 9 (a) is the horizontal high-voltage power device structure profile of deep trouth grid-type SOI of the Ultra-low Specific conducting resistance of an integrated cellular provided by the invention.Device is the multiple cellular of accessible site also, as shown in Fig. 9 (b).Cellular 11 adopts P type doping bar 32 and N-type drift region 43 to form longitudinal super-junction structure; Polygate electrodes 52 periphery is groove gate oxide 22, is that groove gate oxide 22 is comparatively dark, contacts with oxygen buried layer 25 with the horizontal high voltage power device difference of the shallow slot grid SOI of Fig. 8 Ultra-low Specific conducting resistance; Terminal structure 12 comprises N-type doping bar 42 and media slot 24; Drain metal 53 is positioned at N
+above drain contact region 44, mutually isolated by dielectric layer 23 between drain metal 53 and source metal 51.Adopt dark slot grid structure can the concentration of N-type drift region 43, thus reduce conduction resistance further.In addition, groove gate oxide 22 is connected with oxygen buried layer, the wedge angle bottom groove gate oxide 22 can be avoided to puncture in advance.But, this negative effect that will device electric breakdown strength brought to reduce.Except grid structure is different, other formations of device all can adopt the technique identical with Fig. 2 to realize.
Figure 10 (a) is the section of structure of the integrated cellular of the horizontal high voltage power device of planar gate SOI of Ultra-low Specific conducting resistance provided by the invention, and the unique difference of the horizontal high voltage power device of planar gate SOI of the Ultra-low Specific conducting resistance that this device and Fig. 2 provide adopts P
+drain contact region 35, form LIGBT structure, this device possesses the good characteristic of LIGBT.Device is the multiple cellular of accessible site also, as shown in Figure 10 (b).
Claims (3)
1. the horizontal high voltage power device of the SOI of Ultra-low Specific conducting resistance, comprises at least one longitudinal superjunction structure cell (11) and terminal structure (12); When comprising multiple longitudinal superjunction structure cell (11), multiple longitudinal superjunction structure cell (11) along device transverse direction or Width together tightly packed, form overall longitudinal superjunction structure cell; Described terminal structure (12) is positioned at outside or the periphery of overall structure cell; Described longitudinal superjunction structure cell (11) and terminal structure (12) are made on the soi layer (26) of SOI material, described SOI material comprises substrate layer (34), oxygen buried layer (25) and soi layer (26), and wherein oxygen buried layer (25) is positioned in the middle of substrate layer (34) and soi layer (26);
Described longitudinal superjunction structure cell (11) comprises N-type drift region (43), be positioned at the P type trap zone (31) of N-type drift region (43) top outer, be arranged in P type trap zone (31) and the P contacted with source metal (51)
+source contact area (33) and N
+source contact area (41), in the N-type drift region (43) of P type trap zone (31) below, there is P type doping bar (32), P type doping bar (32) and the N-type drift region (43) on side form super-junction structure, and the N-type drift region (43) below super-junction structure and super-junction structure forms the drift region with part super-junction structure; Grid structure is made up of gate oxide (21) and polygate electrodes (52), wherein gate oxide (21) contacts with N-type drift region (43) and P type trap zone (31), mutually isolated by dielectric layer (23) between polygate electrodes (52) and source metal (51);
Described terminal structure (12) comprises N-type drift region (43), N-type doping bar (42), N-type heavy doping drain contact region (44) and media slot (24); In terminal structure (12), the side, top of N-type drift region (43) is the N-type heavy doping drain contact region (44) be connected with drain metal (53), N-type doping bar (42) is arranged in the N-type drift region (43) of below, N-type heavy doping drain contact region (44), and contacts with N-type heavy doping drain contact region (44); Media slot (24) is positioned between P type doping bar (32) of N-type doping bar (42) and described longitudinal superjunction structure cell (11), media slot (24) and N-type doping bar (42) below reserve part N-type drift region (43) are as current channel, mutually isolated by dielectric layer (23) between drain metal (53) and source metal (51).
2. the horizontal high voltage power device of the SOI of Ultra-low Specific conducting resistance according to claim 1, it is characterized in that, described grid structure is planar gate, groove grid or V-type grid.
3. the horizontal high voltage power device of the SOI of Ultra-low Specific conducting resistance according to claim 1, it is characterized in that, the thickness of the oxygen buried layer (25) of described SOI material is no more than 0.5 micron.
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| CN103441147B (en) * | 2013-08-09 | 2016-01-20 | 电子科技大学 | A kind of horizontal SOI power semiconductor device |
| CN103715238B (en) * | 2013-12-30 | 2016-08-31 | 电子科技大学 | A kind of lateral high-voltage device of Ultra-low Specific conducting resistance |
| CN103762232B (en) * | 2013-12-31 | 2016-11-16 | 上海新傲科技股份有限公司 | High voltage transistor with insulating buried layer |
| CN104201194B (en) * | 2014-08-26 | 2016-10-05 | 电子科技大学 | A kind of high voltage power device with Ultra-low Specific on-resistance characteristics |
| WO2018049640A1 (en) * | 2016-09-17 | 2018-03-22 | 电子科技大学 | Folder type terminal having bulk field plate |
| CN107134481A (en) * | 2017-05-08 | 2017-09-05 | 工业和信息化部电子第五研究所华东分所 | A kind of electronic component and preparation method thereof |
| CN111312707B (en) * | 2020-02-27 | 2022-11-04 | 电子科技大学 | Power semiconductor device with low specific on-resistance |
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| US8604513B2 (en) * | 2009-09-30 | 2013-12-10 | Denso Corporation | Semiconductor device having SOI substrate |
| US20120187526A1 (en) * | 2011-01-21 | 2012-07-26 | Jaume Roig-Guitart | Method of forming a semiconductor device termination and structure therefor |
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