CN102916317A - 将至少一个电子元件与电源电互连的装置及相关电子系统 - Google Patents
将至少一个电子元件与电源电互连的装置及相关电子系统 Download PDFInfo
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- CN102916317A CN102916317A CN2012102554864A CN201210255486A CN102916317A CN 102916317 A CN102916317 A CN 102916317A CN 2012102554864 A CN2012102554864 A CN 2012102554864A CN 201210255486 A CN201210255486 A CN 201210255486A CN 102916317 A CN102916317 A CN 102916317A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1153767 | 2011-05-03 | ||
FR1153767A FR2974969B1 (fr) | 2011-05-03 | 2011-05-03 | Dispositif d'interconnexion electrique d'au moins un composant electronique avec une alimentation electrique comprenant des moyens de diminution d'une inductance de boucle entre des premiere et deuxieme bornes |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102916317A true CN102916317A (zh) | 2013-02-06 |
CN102916317B CN102916317B (zh) | 2016-12-07 |
Family
ID=46001036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210255486.4A Active CN102916317B (zh) | 2011-05-03 | 2012-05-03 | 将至少一个电子元件与电源电互连的装置及相关电子系统 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2521175B1 (zh) |
JP (1) | JP6154104B2 (zh) |
CN (1) | CN102916317B (zh) |
ES (1) | ES2793959T3 (zh) |
FR (1) | FR2974969B1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110199388A (zh) * | 2017-01-13 | 2019-09-03 | 科锐费耶特维尔股份有限公司 | 用于并联功率装置的具有低电感和快速切换的高功率多层模块 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6155282B2 (ja) * | 2012-12-13 | 2017-06-28 | 株式会社日立製作所 | パワー半導体モジュール及びこれを用いた電力変換装置 |
EP2840607A1 (en) * | 2013-08-22 | 2015-02-25 | ABB Technology AG | Semiconductor module |
DE102014219759A1 (de) * | 2014-09-30 | 2016-03-31 | Siemens Aktiengesellschaft | Leistungsmodul |
JP6594000B2 (ja) | 2015-02-26 | 2019-10-23 | ローム株式会社 | 半導体装置 |
US10002821B1 (en) | 2017-09-29 | 2018-06-19 | Infineon Technologies Ag | Semiconductor chip package comprising semiconductor chip and leadframe disposed between two substrates |
JP7050732B2 (ja) * | 2019-09-24 | 2022-04-08 | ローム株式会社 | 半導体装置 |
JP7240541B2 (ja) * | 2019-09-24 | 2023-03-15 | ローム株式会社 | 半導体装置 |
JP7542390B2 (ja) | 2020-10-08 | 2024-08-30 | 株式会社東芝 | 電気機器及び電力変換装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347158A (en) * | 1992-08-19 | 1994-09-13 | Kabushiki Kaisha Toshiba | Semiconductor device having a particular terminal arrangement |
CN1222253A (zh) * | 1996-06-14 | 1999-07-07 | 西门子公司 | 半导体芯片载体元件制作方法 |
US6943445B2 (en) * | 2001-03-30 | 2005-09-13 | Hitachi, Ltd. | Semiconductor device having bridge-connected wiring structure |
DE102004050792A1 (de) * | 2004-10-19 | 2006-04-20 | Robert Bosch Gmbh | Bauelemente-Modul für Hochtemperaturanwendungen und Verfahren zum Herstellen eines derartigen Bauelemente-Moduls |
EP2019429A1 (de) * | 2007-07-24 | 2009-01-28 | Siemens Aktiengesellschaft | Modul mit einem zwischen zwei Substraten, insbesondere DCB-Keramiksubstraten, elektrisch verbundenen elektronischen Bauelement und dessen Herstellungsverfahren |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5569957A (en) * | 1994-10-31 | 1996-10-29 | Harris Corporation | Low inductance conductor topography for MOSFET circuit |
JP3448159B2 (ja) * | 1996-06-20 | 2003-09-16 | 株式会社東芝 | 電力用半導体装置 |
JP3635020B2 (ja) * | 2000-09-28 | 2005-03-30 | 京セラ株式会社 | インバータ制御モジュール |
JP3635027B2 (ja) * | 2000-11-22 | 2005-03-30 | 京セラ株式会社 | インバータ制御モジュール |
JP3723869B2 (ja) * | 2001-03-30 | 2005-12-07 | 株式会社日立製作所 | 半導体装置 |
JP2004186504A (ja) * | 2002-12-04 | 2004-07-02 | Hitachi Unisia Automotive Ltd | 半導体装置 |
JP2004266213A (ja) * | 2003-03-04 | 2004-09-24 | Toyota Industries Corp | 半導体装置 |
JP4062191B2 (ja) * | 2003-07-03 | 2008-03-19 | 富士電機デバイステクノロジー株式会社 | 半導体装置及びその製造方法 |
DE10333315B4 (de) * | 2003-07-22 | 2007-09-27 | Infineon Technologies Ag | Leistungshalbleitermodul |
JP4637784B2 (ja) * | 2006-04-14 | 2011-02-23 | 三菱電機株式会社 | 電力用半導体装置 |
DE102008000825A1 (de) * | 2008-03-26 | 2009-10-01 | Robert Bosch Gmbh | Keramik-Metall-Verbundsubstrat |
DE102008058003B4 (de) * | 2008-11-19 | 2012-04-05 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleitermoduls und Halbleitermodul |
-
2011
- 2011-05-03 FR FR1153767A patent/FR2974969B1/fr not_active Expired - Fee Related
-
2012
- 2012-05-02 ES ES12166452T patent/ES2793959T3/es active Active
- 2012-05-02 EP EP12166452.8A patent/EP2521175B1/fr active Active
- 2012-05-02 JP JP2012105209A patent/JP6154104B2/ja active Active
- 2012-05-03 CN CN201210255486.4A patent/CN102916317B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347158A (en) * | 1992-08-19 | 1994-09-13 | Kabushiki Kaisha Toshiba | Semiconductor device having a particular terminal arrangement |
CN1222253A (zh) * | 1996-06-14 | 1999-07-07 | 西门子公司 | 半导体芯片载体元件制作方法 |
US6943445B2 (en) * | 2001-03-30 | 2005-09-13 | Hitachi, Ltd. | Semiconductor device having bridge-connected wiring structure |
DE102004050792A1 (de) * | 2004-10-19 | 2006-04-20 | Robert Bosch Gmbh | Bauelemente-Modul für Hochtemperaturanwendungen und Verfahren zum Herstellen eines derartigen Bauelemente-Moduls |
EP2019429A1 (de) * | 2007-07-24 | 2009-01-28 | Siemens Aktiengesellschaft | Modul mit einem zwischen zwei Substraten, insbesondere DCB-Keramiksubstraten, elektrisch verbundenen elektronischen Bauelement und dessen Herstellungsverfahren |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110199388A (zh) * | 2017-01-13 | 2019-09-03 | 科锐费耶特维尔股份有限公司 | 用于并联功率装置的具有低电感和快速切换的高功率多层模块 |
CN110199388B (zh) * | 2017-01-13 | 2024-01-30 | 沃孚半导体公司 | 用于并联功率装置的具有低电感和快速切换的高功率多层模块 |
Also Published As
Publication number | Publication date |
---|---|
FR2974969A1 (fr) | 2012-11-09 |
EP2521175B1 (fr) | 2020-03-11 |
FR2974969B1 (fr) | 2014-03-14 |
JP2012235128A (ja) | 2012-11-29 |
ES2793959T3 (es) | 2020-11-17 |
CN102916317B (zh) | 2016-12-07 |
JP6154104B2 (ja) | 2017-06-28 |
EP2521175A1 (fr) | 2012-11-07 |
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ASS | Succession or assignment of patent right |
Owner name: ALSTOM TRANSPORT TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: ALSTOM TRANSP SA Effective date: 20150518 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150518 Address after: French Levallois Perret Applicant after: Alstom transport scientific & technical corporation Address before: French Levallois Perret Applicant before: Alstom Transport S. A. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder |
Address after: France 93400 Darren Albert Saint Ouen Street No. 48 Patentee after: Alstom transport scientific & technical corporation Address before: French Levallois Perret Patentee before: Alstom transport scientific & technical corporation |
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CP02 | Change in the address of a patent holder |