CN102880269A - 内存供电系统 - Google Patents

内存供电系统 Download PDF

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Publication number
CN102880269A
CN102880269A CN2011101953129A CN201110195312A CN102880269A CN 102880269 A CN102880269 A CN 102880269A CN 2011101953129 A CN2011101953129 A CN 2011101953129A CN 201110195312 A CN201110195312 A CN 201110195312A CN 102880269 A CN102880269 A CN 102880269A
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internal memory
memory
bios
voltage regulator
control chip
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CN102880269B (zh
Inventor
吴亢
田波
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Jiangsu Yawei Transformer Co ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CN201110195312.9A priority Critical patent/CN102880269B/zh
Priority to TW100125710A priority patent/TW201303572A/zh
Priority to US13/302,940 priority patent/US8391096B2/en
Publication of CN102880269A publication Critical patent/CN102880269A/zh
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
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Abstract

一种内存供电系统,包括一控制单元及一电压调节器,所述控制单元包括一BIOS及与一所述BIOS相连的控制芯片,所述电压调节器通过GPIO总线与所述控制芯片相连,所述BIOS用于根据内存插槽上有效的内存模组数控制所述控制芯片输出控制信号,所述电压调节器根据接收的来自控制芯片所输出的电平信号改变其供电模式,以为插接至内存插槽内的内存模组提供不同的工作电压。本发明内存供电系统避免了所述电压调节器一直工作在全相供电模式下,降低了电压调节器能耗的损失。

Description

内存供电系统
技术领域
本发明涉及一种内存供电系统。
背景技术
现在,伴随着服务器中的内存DIMM(Dual In-line Memory Module,双列直插内存模块)的数目越来越多,系统为内存供电的电压调节器所需提供的最大功耗也越来越大。如当主板上设置有3个DIMM内存插槽时,电压调节器的相数只需设置为一相即可满足内存的供电需求;当主板上设置有6个DIMM插槽时,电压调节器的相数则需设置为两相才能满足内存的供电需求。然而,当主板上设置有6个内存插槽时,但并不代表这6个内存插槽会被同时使用,此时,电压调节器却仍工作在为主板上的6个内存插槽提供最大相数的状态下,如此造成了电压调节器能耗的损失及电能的浪费。
发明内容
鉴于以上内容,有必要提供一种可根据内存插槽的使用数目来设置电压调节器的供电相数的内存供电系统。
一种内存供电系统,包括:
一控制单元,所述控制单元包括BIOS及与一所述BIOS相连的控制芯片,所述BIOS用于根据内存插槽上有效的内存模组数控制所述控制芯片输出控制信号;
一通过GPIO总线与所述控制芯片相连的电压调节器,所述电压调节器根据接收的来自控制芯片所输出的电平信号改变其供电模式,以为插接至内存插槽内的内存模组提供不同的工作电压。
上述内存供电系统可通过所述BIOS的设置来控制所述电压调节器的供电模式,从而使得所述电压调节器按照所述内存模组实际的需求来提供电压,如此避免了所述电压调节器一直供电在全相供电模式下,降低了电压调节器能耗的损失。
附图说明
图1是本发明内存供电系统的较佳实施方式与内存模组的结构图。
图2是图1的电路连接示意图。
主要元件符号说明
控制单元 10
内存模组 20
上拉电路 30
电压调节器 40
内存插槽 60
BIOS 100
控制芯片 102
电阻 R1、R2
电源 Vcc
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面结合附图及较佳实施方式对本发明作进一步详细描述:
请参考图1,本发明内存供电系统用于为插接至内存插槽60内的内存模组20供电,所述内存供电系统的较佳实施方式包括一控制单元10、一上拉电路30及一电压调节器40,所述控制单元10分别与所述内存插槽60、上拉电路30相连,所述电压调节器40与所述内存插槽60及上拉电路30相连。
请参考图2,本实施方式中,主板上设置8个内存插槽60,所述内存插槽60为DIMM内存插槽。所述控制单元10包括BIOS(Basic Input/Output System,基本输入输出系统)100及一与所述BIOS 100相连的控制芯片102,所述控制芯片102可为一PCH(Platform Controller Hub,平台控制中枢)芯片或者一南桥芯片,所述控制芯片102通过第一及第二GPIO总线将其控制信号传输至所述电压调节器40,所述控制芯片102还通过SMBus总线(System Management Bus,系统管理总线)来读取插接至所述内存插槽60内的内存模组20的信息,如内存容量、频率、型号、位置等信息,此信息均可显示在BIOS界面内,以方便用户根据此类信息来通过所述BIOS 100设置所述电压调节器40的供电模式。
所述上拉电路30包括两电阻R1、R2,所述电阻R1、R2的一端电连接于一电源Vcc,另一端分别与所述第一、第二GPIO总线相连。当第一、第二GPIO总线上为高电平信号时,所述电阻R1、R2用于维持第一、第二GPIO总线上的高电平信号,使得所述控制芯片102的控制信号可完整地传输至所述电压调节器40。当然,其他实施方式中,所述上拉电路30亦可省略。
使用时,用户可以通过所述BIOS 100来设置所述电压调节器40的供电模式,即设置所述电压调节器40采用几相供电模式。比如,当插接于所述内存插槽60上有效的内存模组数不大于3时,用户则可通过所述BIOS 100设置所述电压调节器40为一相供电模式;当插接于所述内存插槽60上有效内存模组的数大于3且不大于6时,用户则可通过所述BIOS 100设置所述电压调节器40为两相供电模式;当插接于所述内存插槽60上有效地内存模组的数大于6时,用户则可通过所述BIOS 100设置所述电压调节器40为全相供电模式。下面将对电压调节器如何根据控制信号来实现不同供电模式的输出进行描述。
当用户从BIOS 100中设置所述电压调节器40为一相供电模式时,所述控制芯片102分别输出低电平的控制信号至所述第一、第二GPIO总线上,所述电压调节器40的第一、第二GPIO总线接收到低电平的控制信号后,所述电压调节器40进入一相供电模式,并通过导线来为所述内存模组20提供一相电压;当用户从BIOS 100中设置所述电压调节器40为两相供电模式时,所述控制芯片102输出一低电平的控制信号至与所述第一GPIO总线上,并输出一高电平的控制信号至所述第二GPIO总线上,所述电压调节器40的第一GPIO总线接收到低电平的控制信号,且第二GPIO总线接收到高电平的控制信号后,所述电压调节器40进入两相供电模式,并通过导线来为所述内存模组20提供两相电压;当用户从BIOS 100中设置所述电压调节器40为全相供电模式时,所述控制芯片102输出高电平的控制信号至所述第一、第二GPIO总线上,所述电压调节器40的第一、第二GPIO总线接收到高电平的控制信号后,所述电压调节器40进入全相供电模式,并通过导线来为所述内存模组20提供全相电压。另外,默认模式下,即用户尚未更改BIOS内的设置时,所述控制芯片102输出高电平的控制信号至与所述第一、第二GPIO总线上,即此时所述电压调节器40进入全相供电模式。
上述内存供电系统可通过所述BIOS 100的设置来控制所述电压调节器40的供电模式,从而使得所述电压调节器40按照所述内存模组20实际的需求来提供电压,避免了所述电压调节器40一直工作在全相供电模式下,降低了电压调节器40能耗的损失。

Claims (5)

1.一种内存供电系统,包括:
一控制单元,所述控制单元包括BIOS及一与所述BIOS相连的控制芯片,所述BIOS用于根据内存插槽上有效的内存模组数控制所述控制芯片输出控制信号;以及
一通过GPIO总线与所述控制芯片相连的电压调节器,所述电压调节器根据接收的来自控制芯片所输出的控制信号改变其供电模式,以为插接至内存插槽内的内存模组提供不同的工作电压。
2.如权利要求1所述的内存供电系统,其特征在于:所述内存供电系统还包括一上拉电路,所述上拉电路包括至少一电阻,所述电阻一端与一电源电压相连,另一端连接于所述GPIO总线上。
3.如权利要求2所述的内存供电系统,其特征在于:所述控制芯片为PCH芯片或南桥芯片。
4.如权利要求1所述的内存供电系统,其特征在于:当内存插槽上有效的内存模组数不大于3时,所述BIOS设置所述电压调节器为一相供电模式;当内存插槽上的有效内存模组数大于3且不大于6时,所述BIOS设置所述电压调节器为两相供电模式;当内存插槽上的有效地内存模组数大于6时,所述BIOS设置所述电压调节器为全相供电模式。
5.如权利要求1所述的内存供电系统,其特征在于:所述内存插槽为DIMM内存插槽。
CN201110195312.9A 2011-07-13 2011-07-13 内存供电系统 Expired - Fee Related CN102880269B (zh)

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US13/302,940 US8391096B2 (en) 2011-07-13 2011-11-22 Power supply system for memories

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CN106251904A (zh) * 2016-07-26 2016-12-21 深圳市智微智能科技开发有限公司 内存电压调节方法及电路
CN111143256A (zh) * 2019-11-29 2020-05-12 苏州浪潮智能科技有限公司 一种读取现场可更换单元信息的方法和装置

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CN111143256A (zh) * 2019-11-29 2020-05-12 苏州浪潮智能科技有限公司 一种读取现场可更换单元信息的方法和装置

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US8391096B2 (en) 2013-03-05
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CN102880269B (zh) 2017-02-22

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Granted publication date: 20170222