CN102860138A - 用于调整电偏斜的等离子体处理装置与衬管组件 - Google Patents

用于调整电偏斜的等离子体处理装置与衬管组件 Download PDF

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Publication number
CN102860138A
CN102860138A CN2011800212014A CN201180021201A CN102860138A CN 102860138 A CN102860138 A CN 102860138A CN 2011800212014 A CN2011800212014 A CN 2011800212014A CN 201180021201 A CN201180021201 A CN 201180021201A CN 102860138 A CN102860138 A CN 102860138A
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China
Prior art keywords
slots
liner assembly
plasma processing
chamber
plasma
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Pending
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CN2011800212014A
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English (en)
Chinese (zh)
Inventor
詹姆斯·D·卡达希
陈智刚
沙希德·劳夫
肯尼思·S·柯林斯
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201810343864.1A priority Critical patent/CN108538695B/zh
Publication of CN102860138A publication Critical patent/CN102860138A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
CN2011800212014A 2010-07-21 2011-07-06 用于调整电偏斜的等离子体处理装置与衬管组件 Pending CN102860138A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810343864.1A CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36646210P 2010-07-21 2010-07-21
US61/366,462 2010-07-21
PCT/US2011/043083 WO2012012200A1 (en) 2010-07-21 2011-07-06 Plasma processing apparatus and liner assembly for tuning electrical skews

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201810343864.1A Division CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

Publications (1)

Publication Number Publication Date
CN102860138A true CN102860138A (zh) 2013-01-02

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN2011800212014A Pending CN102860138A (zh) 2010-07-21 2011-07-06 用于调整电偏斜的等离子体处理装置与衬管组件
CN201810343864.1A Expired - Fee Related CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201810343864.1A Expired - Fee Related CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

Country Status (6)

Country Link
US (2) US20120018402A1 (cg-RX-API-DMAC7.html)
JP (1) JP6025722B2 (cg-RX-API-DMAC7.html)
KR (2) KR101970615B1 (cg-RX-API-DMAC7.html)
CN (2) CN102860138A (cg-RX-API-DMAC7.html)
TW (1) TWI502617B (cg-RX-API-DMAC7.html)
WO (1) WO2012012200A1 (cg-RX-API-DMAC7.html)

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CN111312575A (zh) * 2018-12-12 2020-06-19 北京北方华创微电子装备有限公司 内衬组件及反应腔室
CN114946009A (zh) * 2020-04-30 2022-08-26 应用材料公司 具有改进的选择性和流导性的金属氧化物预清洁腔室

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JP6307825B2 (ja) * 2013-09-25 2018-04-11 日新イオン機器株式会社 防着板支持部材、プラズマ源およびイオンビーム照射装置
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US11939477B2 (en) 2014-01-30 2024-03-26 Monolith Materials, Inc. High temperature heat integration method of making carbon black
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TWI690723B (zh) * 2014-05-23 2020-04-11 美商康寧公司 具有減少刮傷及指紋能見度的低對比防反射製品
KR102705340B1 (ko) 2015-02-03 2024-09-09 모놀리스 머티어리얼스 인코포레이티드 카본 블랙 생성 시스템
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JP1546799S (cg-RX-API-DMAC7.html) * 2015-06-12 2016-03-28
CN108292826B (zh) 2015-07-29 2020-06-16 巨石材料公司 Dc等离子体焰炬电力设计方法和设备
KR20180094838A (ko) 2015-08-07 2018-08-24 모놀리스 머티어리얼스 인코포레이티드 카본 블랙의 제조 방법
MX2018002943A (es) 2015-09-09 2018-09-28 Monolith Mat Inc Grafeno circular de pocas capas.
MX2018003122A (es) 2015-09-14 2018-06-19 Monolith Mat Inc Negro de humo de gas natural.
JP1564934S (cg-RX-API-DMAC7.html) * 2016-02-26 2016-12-05
CN109562347A (zh) 2016-04-29 2019-04-02 巨石材料公司 颗粒生产工艺和设备的二次热添加
CA3211318A1 (en) 2016-04-29 2017-11-02 Monolith Materials, Inc. Torch stinger method and apparatus
EP3472852B1 (en) * 2016-06-15 2021-08-11 Evatec AG Vacuum treatment chamber and method of manufacturing a vacuum treated plate-shaped substrate
WO2018165483A1 (en) 2017-03-08 2018-09-13 Monolith Materials, Inc. Systems and methods of making carbon particles with thermal transfer gas
WO2018195460A1 (en) 2017-04-20 2018-10-25 Monolith Materials, Inc. Particle systems and methods
USD875055S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
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EP3676335A4 (en) 2017-08-28 2021-03-31 Monolith Materials, Inc. PARTICULAR SYSTEMS AND PROCEDURES
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JP7089987B2 (ja) * 2018-08-22 2022-06-23 株式会社日本製鋼所 原子層堆積装置
CN208835019U (zh) * 2018-11-12 2019-05-07 江苏鲁汶仪器有限公司 一种反应腔内衬
WO2020205203A1 (en) * 2019-04-05 2020-10-08 Applied Materials, Inc. Process system with variable flow valve
KR102746083B1 (ko) 2019-06-21 2024-12-26 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법
KR102262026B1 (ko) * 2019-07-18 2021-06-07 세메스 주식회사 기판 처리 장치
WO2021162895A1 (en) * 2020-02-10 2021-08-19 Lam Research Corporation Tunability of edge plasma density tilt control
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Publication number Priority date Publication date Assignee Title
CN111312575A (zh) * 2018-12-12 2020-06-19 北京北方华创微电子装备有限公司 内衬组件及反应腔室
CN111312575B (zh) * 2018-12-12 2022-09-16 北京北方华创微电子装备有限公司 内衬组件及反应腔室
CN114946009A (zh) * 2020-04-30 2022-08-26 应用材料公司 具有改进的选择性和流导性的金属氧化物预清洁腔室

Also Published As

Publication number Publication date
US10242847B2 (en) 2019-03-26
JP2013539159A (ja) 2013-10-17
KR20180030729A (ko) 2018-03-23
CN108538695B (zh) 2021-01-29
US20120018402A1 (en) 2012-01-26
US20150279633A1 (en) 2015-10-01
KR20130092387A (ko) 2013-08-20
TW201205639A (en) 2012-02-01
TWI502617B (zh) 2015-10-01
KR101970615B1 (ko) 2019-04-19
CN108538695A (zh) 2018-09-14
JP6025722B2 (ja) 2016-11-16
WO2012012200A1 (en) 2012-01-26

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Application publication date: 20130102