CN102856308B - Power semiconductor modular - Google Patents

Power semiconductor modular Download PDF

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Publication number
CN102856308B
CN102856308B CN201210219367.3A CN201210219367A CN102856308B CN 102856308 B CN102856308 B CN 102856308B CN 201210219367 A CN201210219367 A CN 201210219367A CN 102856308 B CN102856308 B CN 102856308B
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China
Prior art keywords
electrode
insulated substrate
wiring pattern
main terminal
main
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CN201210219367.3A
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CN102856308A (en
Inventor
东克典
安田健太郎
藤田孝博
斋藤克明
小池义彦
日吉道明
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Hitachi Power Semiconductor Device Ltd
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Hitachi Power Semiconductor Device Ltd
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    • H—ELECTRICITY
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)

Abstract

The invention provides power semiconductor modular, it can reduce the generation of the voltage fluctuation of the reason becoming electromagnetism fault etc.Each main electrode (52,52 ') of the thyristors (50,50 ') such as the IGBT that each insulated substrate in multiple insulated substrate (20,20 ') carries is electrically connected by conductor part (45).Thus, can suppress due to the junction capacitance of thyristor and stray inductance and the generation of the resonance voltage caused.

Description

Power semiconductor modular
Technical field
The present invention relates to the power semiconductor modular used in the conversion or control of electric power.
Background technology
Power-converting device has the function being transformed to by the direct current power from direct-current power supply and being transformed to direct current power for the function of the alternating electromotive force to current electrical load supplies such as electric rotating machines or the alternating electromotive force that sent by generator.In order to realize this mapping function, power-converting device has the power transformation circuits such as inverter circuit, inverter circuit employs the power semiconductor modular with switching function, by repeating ON Action and cutting off action, carry out power converter from direct current power to alternating electromotive force or from alternating electromotive force to direct current power.
Power semiconductor modular, the metab of heat transmission engages by welding etc. the insulated substrate defining wiring pattern, the wiring pattern of this insulated substrate carries multiple semiconductor element in the mode be connected in parallel.In high-power power model, in order to carry out switch to big current, by carrying this insulated substrate multiple, realize being connected in parallel of multiple semiconductor element.
As this existing power semiconductor modular, the power semiconductor modular recorded in known patent document 1 ~ 4.
In power semiconductor modular, owing to being connected in parallel multiple semiconductor element, therefore, parts number has more increased, and the wiring distance from outer electrode to each semiconductor element is more different, creates the difference of stray inductance.Due to the fluctuation of the characteristic of this point and each semiconductor element, produce the deviation of the timing of switch.Therefore, at failure of current not long ago, produce between semiconductor element due to the stray inductance between the electric capacity of semiconductor element and semiconductor element and the resonance caused.Therefore, such as, when semiconductor element is IGBT(Insulated GateBipolar Transistor) time, between the collector electrode-emitter at element two ends, and also produce voltage fluctuation between gate-emitter, voltage fluctuation feeds through to control circuit.Now, the outside closed circuit formed through parasitic capacitance by power transformation circuit and the earth or cabinet becomes antenna, generate electromagnetic waves due to the voltage fluctuation produced in power semiconductor modular, cause the electromagnetic interference to inverter self or outside or misoperation.
The ever-increasing high voltage power model used in high efficiency high-voltage electrical force conversion system of demand in recent years, semiconductor element is thick, has withstand voltage semiconductor regions long, therefore, depletion layer expands, and discharging inner electric charge needs spended time, and switching time is long.In addition, because voltage is high, the energy put aside in the parasitic capacitance of therefore semiconductor element is also large.Therefore, in the big current high voltage power semiconductor modular using a large amount of semiconductor elements, the energy put aside in parasitic capacitance due to the deviation etc. of switch produces difference, the stray inductance L of the wiring be connected with between semiconductor element due to the parasitic capacitance C of semiconductor element and produce LC resonance, produces large voltage fluctuation.
Patent documentation 1: Japanese Patent No. 4138192 publication
Patent documentation 2: Japanese Patent No. 4484400 publication
Patent documentation 3: Japanese Patent No. 4142539 publication
Patent documentation 4: Japanese Unexamined Patent Publication 2002-141465 publication
Summary of the invention
The present invention considers the problems referred to above and proposes, and its object is to the power semiconductor modular providing a kind of voltage fluctuation that can reduce the reason becoming electromagnetism fault etc. to produce.
In power semiconductor modular of the present invention, each main electrode of the thyristors such as the IGBT that each insulated substrate in multiple insulated substrate carries is electrically connected by conductor part.At this, conductor part is such as wire etc.Thus, can suppress due to the junction capacitance of thyristor and stray inductance and the generation of the resonance voltage caused.
The power semiconductor modular of a mode of the present invention, possesses: the first insulated substrate; The second insulated substrate; Be mounted on described first insulated substrate, possess the first thyristor of the first main electrode and the second main electrode; Be mounted on described the second insulated substrate, possess the second thyristor of the 3rd main electrode and the 4th main electrode; The first main terminal be electrically connected with described first main electrode; The second main terminal be electrically connected with described second main electrode; The 3rd main terminal be electrically connected with described 3rd main electrode; And the 4th main terminal to be electrically connected with described 4th main electrode, described power semiconductor modular has at least one conductor part by described first main electrode and described 3rd main electrode electrical connection.
Such as, the first and second thyristor is IGBT, first and the 3rd main electrode be the emitter electrode of IGBT, second and the 4th main electrode be the collector electrode of IGBT.In addition, such as, first and the 3rd main terminal be emitter main terminal, second and the 4th main terminal be collector electrode main terminal.
According to the manner, can suppress due to the junction capacitance of the first and second thyristor and stray inductance and the generation of the resonance voltage caused.
In addition, in aforesaid way, one end of conductor part can also be connected with the first main electrode, the other end of conductor part is connected with described 3rd main electrode.In addition, can the first and second wiring pattern be set respectively on first and the second insulated substrate, between first main electrode and the first wiring pattern, between the 3rd main electrode and the second wiring pattern and between the first wiring pattern and the second wiring pattern, be electrically connected by conductor part.At this, the first and second wiring pattern is such as the metal films such as the Copper thin film engaged on insulated substrate.
In addition, can the 3rd wiring pattern be set on the first insulated substrate, 3rd wiring pattern is electrically connected the second main electrode and the second main terminal, and, the second insulated substrate arranges the 4th wiring pattern, 4th wiring pattern is electrically connected the 4th main electrode and the 4th main terminal, by conductor part, the first wiring pattern is electrically connected with the second wiring pattern.At this, the 3rd and the 4th wiring pattern is such as the metal films such as the Copper thin film engaged on insulated substrate.
According to these modes, can suppress due to the junction capacitance of the first and second thyristor and stray inductance and the generation of the resonance voltage caused.
According to the present invention, the voltage fluctuation of generation when to carry out switch in power semiconductor modular can be reduced.
Accompanying drawing explanation
Fig. 1 represents the power semiconductor modular of first embodiment of the invention.
Fig. 2 is the equivalent circuit of the first execution mode.
Equivalent circuit when Fig. 3 is the shutoff of the first execution mode.
Fig. 4 represents the power semiconductor modular of second embodiment of the invention.
Fig. 5 represents the power semiconductor modular of third embodiment of the invention.
Fig. 6 represents the power semiconductor modular of four embodiment of the invention.
Fig. 7 represents the power semiconductor modular of fifth embodiment of the invention.
Equivalent circuit when Fig. 8 is the shutoff of the 5th execution mode.
Fig. 9 is the shutoff oscillogram of the power semiconductor modular applying embodiments of the present invention.
Symbol description
10 heat transmission metallic plates
12 resin enclosures
20,20 ' insulated substrate
22,22 ' wiring pattern
23,23 ' collector electrode wiring pattern
24,24 ' emitter wiring pattern
25,25 ' grid wiring pattern
26, connect between 26 ' insulated substrate
30,30 ', 32,32 ' main terminal
35,35 ', 36,36 ' control terminal
41, the aluminum conductor of 41 ' connection emitter electrode and terminal
42, the aluminum conductor of 42 ' connection control terminal and gate electrode
42, the aluminum conductor of 43 ' connection control terminal and emitter electrode
45, the 45 ' aluminum conductor that emitter electrode is connected to each other
46, the aluminum conductor of 46 ' connection gate electrode and grid wiring pattern
47, the 47 ' aluminum conductor connecting connecting wiring pattern and IGBT emitter electrode between insulated substrate
48, the 48 ' aluminum conductor connecting connecting wiring pattern and diode anode electrode between insulated substrate
The aluminum conductor that collector electrode wiring pattern between 49 insulated substrates connects
50、50’IGBT
51,51 ' gate electrode
52,52 ' emitter electrode
55,55 ' diode
56,56 ' anode electrode
60 power supplys
62 gate drivers
65 load inductances
Embodiment
Fig. 1 represents the in-built summary of the power semiconductor modular of first embodiment of the invention.The part that in figure, the numeral of symbol is identical represents identical structural element.
Heat transmission metallic plate 10 is connected to by grafting materials such as scolding tin two insulated substrates 20,20 ' being formed with wiring pattern 22 on top.In addition, in the present embodiment, insulated substrate 20,20 ' above or the structure of periphery identical respectively, in following record, about the content that an insulated substrate describes, also identical for another insulated substrate.
On wiring pattern 22, be connected to the IGBT50 of mos gate polar form switching device by grafting materials such as scolding tin, circulation diode 55, collector electrode main terminal 30 be used as semiconductor element.
In the embodiment of figure 1, two insulated substrates 20,20 ' similarly having carried IGBT and diode, with semiconductor element and IGBT and diode, their electrode and the mode being configured to line symmetry of wiring pattern, be accommodated in resin enclosure 12.Thus, relatively IGBT50,50 ' is configured.Therefore, between two insulated substrates 20,20 ', the emitter electrode 52 of IGBT50 and the emitter electrode 52 ' of IGBT50 ' are with almost the shortest path, be namely electrically connected by plain conductor 45 with low inductance and low resistance.At this, wire 45 is connected with a respective part for emitter electrode 52,52 '.In addition, owing to not flowing through the such big current of principal current, therefore, the number of wire 45 can than at emitter main terminal 32, between 32 ' and emitter electrode 52,52 ', the number of the wire 41,41 ' of electrical connection is few, is 1 in the present embodiment.In addition, wire 45 is not via other electrode between emitter electrode 52,52 ', and the two ends of wire 45 engage with emitter electrode 52,52 ' respectively.
As described in detail afterwards, in power semiconductor modular, by conductor 45 by be mounted in respectively on different insulated substrates IGBT50,50 ' emitter electrode 52,52 ' be electrically connected, can suppress after shut-off thus, owing to remaining the stray inductance of the IGBT50 of electric charge, the junction capacitance of 50 ' and IGBT50,50 ' wiring around and the generation of resonance voltage that causes.
In addition, the metallic conductor of the wire such as aluminum conductor or copper cash can be used as wire 45.In addition, the bar-shaped conductor that copper rod etc. is elongated can also be used.
The emitter electrode 52 of IGBT50, via diode 55, is connected with emitter main terminal 32 by aluminum conductor 41.The gate electrode 51 IGBT50 being carried out to switch is connected with gate control terminal 35 by aluminum conductor 42, and in order to give for executing alive reference potential to gate electrode 51, emitter electrode 52 is connected with emitter control terminal 36 by aluminum conductor 43.In order to carry out switch to two IGBT50,50 ', by simultaneously to gate control terminal 35(35 ') voltage of about 15V, IGBT50(50 ' are provided) conducting, conducting between collector electrode main terminal 30, emitter main terminal 32, flows through principal current.In the present embodiment, as described later, by connecting between IGBT50,50 ' with aluminum conductor 45, vibration passing during switch OFF can be suppressed to outside.
Fig. 2 represents the equivalent circuit figure of inverter circuit and present embodiment.In figure, the part of dotted line represents the equivalent circuit of the power semiconductor modular of the present embodiment, inverter circuit is connected in series two the present embodiment, is connected in connection mid point portion with load inductance 65, by the half-bridge circuit that the two ends being connected in series the circuit of gained are connected with power supply 60.Such as, in 3 phase ac motors etc., load inductance 65 is equivalent to motor winding, has been connected in parallel 3 half-bridge circuits, and each mid point that connects respectively is connected with the UVW that motor 3 phase inputs.Although not shown, but in order to supply electric current instantaneous when carrying out switch, power supply 60 is connected in parallel the capacitor that stray inductance is low.Gate control terminal 35(35 ' at power semiconductor modular), emitter control terminal 36(36 ') on connect drive circuit, change controlling the electric current that flows through to load inductance 65 by making ON time.
In this equivalent circuit, owing to considering LC resonant circuit, therefore mainly illustrate stray inductance.The stray inductance of the stube cable of the stube cable between load inductance 65 and power semiconductor modular 100, power semiconductor modular 100 and power supply 60, power semiconductor modular stube cable is each other represented with 70 and 71,73 and 74,75 and 76 respectively.In addition, by the collector electrode main terminal 30(30 ' in power semiconductor modular 100), emitter main terminal 32(32 '), aluminum conductor 41(41 '), 42(42 '), 43(43 ') stray inductance respectively with 30L(30L '), 32L(32L '), 41L(41L '), 42L(42L '), 43(43L ') represent.
At this, for half-bridge circuit, consider the IGBT50(50 ' of power semiconductor modular of the upper arm of half-bridge circuit) when becoming shutoff from conducting.When conducting, the gate control terminal 35(35 ' of IGBT) and emitter control terminal 36(36 ') between to be applied with the voltage of about 15V by gate drivers 62.Thus, at the gate electrode 51(51 ' of IGBT) and emitter electrode 52(52 ') between grid capacitance (C) in savings electric charge.In addition, electric current (I) flows through IGBT50(50 '), stray inductance 30L, 41L, 32L(30L ', 41L ', 32L ').(1/2) × LI has been put aside in these stray inductances (L) 2energy.When turning off, by the gate electrode 51(51 ' of gate drivers at IGBT) and emitter electrode 52(52 ') between apply the voltage of 0 ~-15V, take out the electric charge remained in grid capacitance.Now, from gate electrode 51(51 ') to gate drivers, the aluminum conductor 42(42 ' through grid), from gate drivers to emitter electrode 52(52 ') and, electric charge is through control emitter wire 43(43 ') move, namely flow through electric current.As gate electrode 51(51 ') and emitter electrode 52(52 ') between grid voltage when becoming below threshold voltage of the grid, electric current (I) is decayed, and the electric charge in IGBT is through collector electrode, emitter electrode and discharging.
Fig. 3 represents equivalent circuit now.As shown in Figure 3, equivalent circuit, from the state of conducting under low resistance, becomes the circuit of the electric charge put aside in the electric capacity Cce be released between collector electrode and emitter electrode when turning off.In figure 3, IGBT50 is represented by the electric capacity 50Cge of the electric capacity 50Cce between collector emitter, the internal resistance 50Rce between collector emitter, grid emission interpolar.The electric charge d/d period of putting aside in the electric capacity 50Cce between collector emitter, principal current continues flowing.In addition, electric charge more reduces, and internal resistance 50Rce is larger.At initial stage when turning off, electric charge discharges sharp, namely there is curent change (di/dt) sharply, in the stray inductance (L) of terminal and aluminum conductor, produce voltage (Ldi/dt).In the present embodiment be made up of two IGBT, due to the difference of these stray inductances, threshold voltage of the grid, produce difference in the voltage applied between the collector electrode, emitter electrode of IGBT, therefore, in the quantity of electric charge put aside in the IGBT electric capacity Cce on different substrates, produce difference.Then, at the end of the curent change sharply at initial stage, during the tail current that the curent change becoming mitigation continues for a long time.
In the present embodiment, two IGBT electric capacity 50Cce, 50Cce can be made by wire 45 ' the poor equalization of electric charge.Therefore, in wire 45, do not flow through principal current (I), therefore, in stray inductance (L), do not put aside energy (1/2) × LI 2, in addition, voltage can not be produced due to the curent change (di/dt) when turning off.In addition, in wire 45, do not flow through grid current during shutoff.Therefore, the electric current of this wire can not have influence on grid current.In addition, the length of arrangement wire of wire 45 is than controlling emitter wire 43(43 ') and short via the length of arrangement wire of the circuit of emitter control terminal, therefore can reduce stray inductance.Thus, can prevent from making the electric current of the poor equalization of electric charge through controlling emitter wire 43(43 ') flow to gate drivers, the misoperation of gate driver circuit can be prevented.Namely, when turning off, with the parasitic capacitance 50Cce comprising two IGBT, 50Cce ' and stray inductance 41L, 32L, 32L ', 41L ', 30L ', the lc circuit of 30L, or comprise the parasitic capacitance 50Cce of two IGBT, 50Cce ' and stray inductance 41L, 43L, 43L ', 41L ', 30L ', the path of the lc circuit of 30L is compared, comprise the parasitic capacitance 50Cce of two IGBT, 50Cce ' and stray inductance 45L, 30L ', the length of arrangement wire in the path of the lc circuit of 30L is short, therefore 43L can be prevented, LC resonance current flowing in the path of the grid circuit of the outside of 43L '.Therefore, the potential oscillations of the control terminal 36,36 ' of the reference potential becoming grid voltage can be prevented, prevent voltage fluctuation to be delivered to outside gate drivers, prevent the IGBT misoperation that conducting is such again.
The shutoff waveform of the power semiconductor modular that Fig. 9 represents existing power semiconductor modular and applies present embodiment is routine.Known according to the present embodiment, compared with prior art reduce the vibration of grid voltage and collector voltage.
Fig. 4 represents the in-built summary of the power semiconductor modular of the second execution mode of the present invention.
Heat transmission metallic plate 10 use the grafting materials such as scolding tin connect the insulated substrate 20,20 ' with collector electrode wiring pattern 23, emitter wiring pattern 24, grid wiring pattern 25.
At collector electrode with on wiring pattern 23, the grafting materials such as scolding tin are used to connect 4 IGBT50,2 diodes 55.By aluminum conductor 41, the emitter electrode 52 of each IGBT and the anode electrode 56 of each diode are connected with emitter wiring pattern 24.
Collector electrode main terminal 30 is connected respectively by grafting materials such as scolding tin with emitter wiring pattern 24 with collector electrode wiring pattern 23, emitter main terminal 32.
The gate electrode 51 of each IGBT is connected by aluminum conductor 46 with grid wiring pattern 25, and gate control terminal 35 is connected by aluminum conductor 42 with grid wiring pattern 25.Emitter control terminal 36 is connected by aluminum conductor 43 with emitter wiring pattern 24.
Insulated substrate 20 ' also connects each portion in the same manner as insulated substrate 20.
In addition, the emitter electrode of the IGBT in two insulated substrates uses aluminum conductor 45 to connect each other.At this, via the IGBT50 of 2 on insulated substrate 20,1 diode 55, be connected to 2 IGBT50 on insulated substrate 20 ', 1 diode 55 with aluminum conductor 45.By so connecting the height that can reduce aluminum conductor, reduce stray inductance.
In the embodiment illustrated in fig. 4, two insulated substrates 20,20 ' similarly having carried 4 IGBT and 2 diodes, in the same manner as execution mode above, are contained in resin enclosure 12 with IGBT and diode, their electrode and the mode being configured as line symmetry of wiring pattern.In addition, in each insulated substrate, according to wire and wiring pattern, respectively by 4 IGBT each other and 2 diodes be connected in parallel with each other, thus, compared with the execution mode of Fig. 1, increase the current capacity of power semiconductor modular.
In the present embodiment, 2 IGBT and 1 diodes of insulated substrate 20 and 2 IGBT and 1 diodes of insulated substrate 20 ' arranged in columns along (being long limit in detail in this figure) of resin enclosure 12.At the another side parallel on one side with this, IGBT and diode are arranged in columns similarly.In row of these semiconductor elements, each part of the emitter electrode of 4 IGBT and each anode electrode of 2 diodes are electrically connected in the mode of putting up a bridge by a wire 45 in the same manner as the execution mode of Fig. 1.That is, the wire 45 by crossing between insulated substrate 20,20 ', is electrically connected the emitter electrode of IGBT be mounted on insulated substrate 20,20 ' and the anode electrode of diode mutually.Thus, same with the execution mode of Fig. 1, can suppress due to IGBT50,50 ' junction capacitance and IGBT50,50 around the generation of resonance voltage that causes of the stray inductance of wiring.
In addition, in the present embodiment, also can similarly by the wire of conductor, a part for the emitter electrode of IGBT be connected with the anode electrode of diode in the semiconductor element row of the opposing party.
Fig. 5 represents the in-built summary of the power semiconductor modular of third embodiment of the invention.
Be with the difference of the second execution mode, employ on heat transmission metallic plate 10, to be provided with collector electrode wiring pattern 23, emitter wiring pattern 24, the grid insulated substrate 20,20 ' connecting 26 between wiring pattern 25 and the special insulated substrate that connected in the emitter electrode face of the semiconductor element on different insulated substrates, anode electrode face.
In this insulated substrate, connected being connected 26 between the emitter electrode 52 of IGBT50 with insulated substrate by aluminum conductor 47, and connected being connected 26 between the anode electrode of diode 55 with insulated substrate by aluminum conductor 48.Further, be connected connecting 26 between insulated substrate with 26 ' by aluminum conductor 45.
By using this insulated substrate, bad when can reduce manufacture.Heat transmission metallic plate 10 connects insulated substrate 20,20 ' by the grafting material such as scolding tin, and therefore, the height of the semiconductor element on insulated substrate 20 and insulated substrate 20 ' is slightly different.Therefore, when being arranged on semiconductor element by the aluminum conductor 45 connected between insulated substrate, when the wire-bonded of being undertaken by ultrasonic wave etc., the surface electrode of semiconductor element is likely damaged.On the other hand, if use the insulated substrate of present embodiment, then can prevent the damage of the surface electrode of semiconductor element, improve qualification rate.
Fig. 6 represents the in-built summary of the power semiconductor modular of the 4th execution mode of the present invention.
Be with the difference of the 3rd execution mode, common collector main terminal 30, emitter main terminal 32, gate control terminal 35, emitter control terminal 36 in two insulated substrates 20,20 '.
Thus, can prevent from flowing through resonance current in the cable be connected to each other by terminal, make the stray inductance (not shown) based on the resonant circuit connecting form constant.
Fig. 7 represents the in-built summary of the power semiconductor modular of the 5th execution mode of the present invention.
Be with the difference of the 4th execution mode, connect with the collector electrode wiring pattern 23 ' of aluminum conductor 49 by the collector electrode of insulated substrate 20 wiring pattern 23, insulated substrate 20 '.Thereby, it is possible to form not via outside terminal, with minimum stray inductance by between the collector electrode of the semiconductor element on different insulative substrate, the circuit that connects respectively between emitter electrode.
Fig. 8 represents the equivalent circuit during shutoff of the 5th execution mode.At this, the IGBT in insulated substrate, the electric capacity of diode are that representative represents with 50Cce, and the internal resistance of two IGBT is that representative represents with 50Rce, and grid capacitance is also that representative represents with 50Cge.As shown in Figure 8, constitute the collector electrode on different insulated substrates to connect each other by the inductance 49L of wire 49, the closed circuit that emitter electrode connects each other by the inductance 45L of wire 45, each terminal 30L, 30L that they and principal current flow through ', 32L, 32L ', wire 41L, 41L ' different.In addition, with control with compared with stray inductance 43L, the 43L ' of emitter wire, parasitic capacitance is low, therefore little on the impact of gate drivers.
According to the respective embodiments described above, can providing a kind of and carry in the big current high voltage power module of multiple semiconductor element on multiple insulated substrate, outside not produced to the power semiconductor modular of voltage fluctuation when carrying out switch.
And, according to the present embodiment, insulated substrate can be reduced, by shortening cornerwise length of insulated substrate, the stress that coefficient of expansion difference between the different materials during variations in temperature of the connecting portion of the wiring of the connecting portion of insulated substrate and heat transmission metallic plate, insulated substrate and the electric conductor above it causes reduces, and connection lifetime extends.In addition, insulated substrate size reduces to cause the cost of fee of material to reduce, and can implement the middle inspection of each insulated substrate, and the qualification rate of finished goods improves, and can realize cost and reduce.

Claims (6)

1. a power semiconductor modular, it possesses:
First insulated substrate;
The second insulated substrate;
Be mounted on described first insulated substrate, possess the first thyristor of the first main electrode and the second main electrode;
Be mounted on described the second insulated substrate, possess the second thyristor of the 3rd main electrode and the 4th main electrode;
The first main terminal be electrically connected with described first main electrode;
The second main terminal be electrically connected with described second main electrode;
The 3rd main terminal be electrically connected with described 3rd main electrode; And
The 4th main terminal be electrically connected with described 4th main electrode,
The feature of described power semiconductor modular is,
Have by described first main electrode and described 3rd main electrode electrical connection, at least one conductor part that path between the main terminal that flows through with principal current is separated.
2. power semiconductor modular according to claim 1, is characterized in that,
Possess:
The first wiring pattern that what the path between the main terminal flow through with principal current was separated be arranged on described first insulated substrate; And
Be arranged on the second wiring pattern on described the second insulated substrate,
Between described first main electrode and described first wiring pattern, between described 3rd main electrode and described second wiring pattern and between described first wiring pattern and described second wiring pattern, be electrically connected by described conductor part.
3. power semiconductor modular according to claim 2, is characterized in that,
Possess:
Be arranged on described first insulated substrate, the 3rd wiring pattern be electrically connected with described second main electrode and described second main terminal; And
Be arranged on described the second insulated substrate, the 4th wiring pattern be electrically connected with described 4th main electrode and described 4th main terminal,
Possesses other conductor part be electrically connected with described second wiring pattern by described first wiring pattern.
4. power semiconductor modular according to claim 1, is characterized in that,
Possess:
The the first public main terminal be electrically connected with described first main terminal and described 3rd main terminal; And
The the second public main terminal be electrically connected with described second main terminal and described 4th main terminal.
5. power semiconductor modular according to claim 2, is characterized in that,
Possess:
The the first public main terminal be electrically connected with described first main terminal and described 3rd main terminal; And
The the second public main terminal be electrically connected with described second main terminal and described 4th main terminal.
6. power semiconductor modular according to claim 3, is characterized in that,
Possess:
The the first public main terminal be electrically connected with described first main terminal and described 3rd main terminal; And
The the second public main terminal be electrically connected with described second main terminal and described 4th main terminal.
CN201210219367.3A 2011-06-29 2012-06-28 Power semiconductor modular Active CN102856308B (en)

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Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8847328B1 (en) * 2013-03-08 2014-09-30 Ixys Corporation Module and assembly with dual DC-links for three-level NPC applications
JP2015142059A (en) * 2014-01-30 2015-08-03 株式会社日立製作所 power semiconductor module
US10522517B2 (en) 2014-07-03 2019-12-31 Nissan Motor Co., Ltd. Half-bridge power semiconductor module and manufacturing method therefor
JP6413523B2 (en) * 2014-09-09 2018-10-31 富士電機株式会社 Semiconductor device
CN107155372B (en) 2014-11-28 2019-10-01 日产自动车株式会社 Half-bridge power semiconductor module and its manufacturing method
JP6394459B2 (en) * 2015-03-26 2018-09-26 住友電気工業株式会社 Semiconductor device
US9660643B2 (en) 2015-05-28 2017-05-23 Toyota Motor Engineering & Manufacturing North America, Inc. Method and apparatus to improve power device reliability
US9584116B2 (en) 2015-05-28 2017-02-28 Toyota Motor Engineering & Manufacturing North America, Inc. Method and apparatus for current/power balancing
JP6062565B1 (en) * 2015-05-29 2017-01-18 新電元工業株式会社 Semiconductor device and manufacturing method thereof
US10361136B2 (en) 2015-09-29 2019-07-23 Mitsubishi Electric Corporation Semiconductor device and semiconductor module provided with same
JP2017162866A (en) * 2016-03-07 2017-09-14 株式会社東芝 Semiconductor device
JP6638477B2 (en) * 2016-03-07 2020-01-29 トヨタ自動車株式会社 Semiconductor device
US9923560B2 (en) 2016-04-13 2018-03-20 Toyota Motor Engineering & Manufacturing North America, Inc. Method and apparatus for current/power balancing
DE112017000077T5 (en) * 2016-05-19 2018-04-19 Fuji Electric Co., Ltd. HOLLOWING DEVICE WITH INSULATING GATE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE WITH INSULATING GATE
US10116303B2 (en) * 2016-07-01 2018-10-30 Toyota Motor Engineering & Manufacturing North America, Inc. Parallel devices having balanced switching current and power
EP3545552A1 (en) * 2016-11-25 2019-10-02 ABB Schweiz AG Power semiconductor module
US10187050B2 (en) * 2017-04-12 2019-01-22 Toyota Motor Engineering & Manufacturing North America, Inc. Method and apparatus for balancing current and power
WO2018193929A1 (en) * 2017-04-19 2018-10-25 三菱電機株式会社 Semiconductor module and power conversion device
WO2019044748A1 (en) * 2017-09-04 2019-03-07 三菱電機株式会社 Semiconductor module and electric power converter
JP6838243B2 (en) 2017-09-29 2021-03-03 日立Astemo株式会社 Power converter
JP2019068648A (en) * 2017-10-02 2019-04-25 株式会社豊田自動織機 Inverter device
WO2019146073A1 (en) * 2018-01-26 2019-08-01 新電元工業株式会社 Electronic module
CN111801795A (en) 2018-09-14 2020-10-20 富士电机株式会社 Semiconductor device with a plurality of semiconductor chips
JP6962945B2 (en) * 2019-01-30 2021-11-05 株式会社 日立パワーデバイス Power semiconductor module and power converter using it
WO2020170553A1 (en) 2019-02-18 2020-08-27 富士電機株式会社 Semiconductor device
JP7309396B2 (en) * 2019-03-18 2023-07-18 株式会社東芝 semiconductor equipment
US11069640B2 (en) 2019-06-14 2021-07-20 Cree Fayetteville, Inc. Package for power electronics
DE102020208755A1 (en) 2020-07-14 2022-01-20 Zf Friedrichshafen Ag Half-bridge module for an inverter of an electric drive of an electric vehicle or a hybrid vehicle and inverter for an electric drive of an electric vehicle or a hybrid vehicle
JP7361672B2 (en) * 2020-10-27 2023-10-16 三菱電機株式会社 semiconductor equipment
EP4030604A1 (en) * 2021-01-18 2022-07-20 Siemens Aktiengesellschaft Power converter with at least two power semiconductor modules
EP4243070A1 (en) * 2022-03-11 2023-09-13 Hitachi Energy Switzerland AG Power module and method for manufacturing a power module
WO2023248718A1 (en) * 2022-06-24 2023-12-28 住友電気工業株式会社 Semiconductor device
CN115346948B (en) * 2022-10-14 2023-04-07 吉光半导体(绍兴)有限公司 Half-bridge module
CN115985910B (en) * 2023-03-22 2023-06-02 烟台台芯电子科技有限公司 IGBT half-bridge power module

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101622779A (en) * 2007-02-22 2010-01-06 丰田自动车株式会社 Semiconductor power converting device and method for manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4138192B2 (en) 1999-12-27 2008-08-20 三菱電機株式会社 Semiconductor switch device
JP4484400B2 (en) 2000-08-28 2010-06-16 三菱電機株式会社 Semiconductor device
US6552429B2 (en) 2000-08-28 2003-04-22 Mitsubishi Denki Kabushiki Kaisha Power switching semiconductor device with suppressed oscillation
US20020024134A1 (en) * 2000-08-28 2002-02-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2002141465A (en) 2000-10-31 2002-05-17 Toshiba Corp Semiconductor module for electric power
JP3673776B2 (en) * 2002-07-03 2005-07-20 株式会社日立製作所 Semiconductor module and power conversion device
JP4142539B2 (en) 2003-09-25 2008-09-03 三菱電機株式会社 Power semiconductor device
JP2009278772A (en) * 2008-05-14 2009-11-26 Toyota Industries Corp Inverter module

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101622779A (en) * 2007-02-22 2010-01-06 丰田自动车株式会社 Semiconductor power converting device and method for manufacturing the same

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