JP7361672B2 - semiconductor equipment - Google Patents

Description

The present disclosure relates to a semiconductor device.

Patent Document 1 describes a technology related to a semiconductor device.

International Publication No. 2020/054806

Regarding semiconductor devices, it is desired to suppress unnecessary oscillations.

Therefore, the present disclosure has been made in view of the above-mentioned points, and an object of the present disclosure is to provide a technique that makes it difficult for unnecessary oscillations to occur in a semiconductor device.

One embodiment of a semiconductor device includes a substrate and a first switching circuit provided on the substrate and including a plurality of first switching elements connected in parallel to each other. Each of the plurality of first switching elements has a first control electrode, a first positive electrode, and a first negative electrode. The first positive electrodes of the plurality of first switching elements are electrically connected to each other by being joined to the same first conductive pattern on the substrate. The first switching circuit includes a first element pair consisting of adjacent first switching elements whose first negative electrodes are directly connected to each other by a wiring member, and a first element pair consisting of adjacent first switching elements whose first negative electrodes are not directly connected to each other by a wiring member. and a second element pair consisting of a first switching element.

Unnecessary oscillations are less likely to occur in a semiconductor device.

1 is a schematic plan view showing an example of the structure of a semiconductor device. 1 is a schematic diagram showing an example of a circuit configuration of a semiconductor device. 1 is a schematic plan view showing an example of the structure of a semiconductor device. 1 is a schematic plan view showing an example of the structure of a semiconductor device. 1 is a schematic plan view showing an example of the structure of a semiconductor device.

FIG. 1 is a schematic plan view showing an example of the structure of a semiconductor device 100. FIG. 2 is a schematic diagram showing an example of the circuit configuration of the semiconductor device 100. The semiconductor device 100 is, for example, a power module capable of applying a high potential and a low potential to a load 200 (see FIG. 2). Specifically, the semiconductor device 100 is, for example, an inverter device (also referred to as an inverter circuit) that alternately applies a high potential and a low potential to the load 200. The semiconductor device 100 may be other than an inverter device. An example of the circuit configuration of the semiconductor device 100 will be described below, and then an example of the structure of the semiconductor device 100 will be described. In the description of the structural example of the semiconductor device 100, the XY orthogonal coordinate system shown in FIG. 1 is used. The tip side of the arrow indicating the Y direction of the XY orthogonal coordinate system is sometimes called the +Y side, and the opposite side is sometimes called the -Y side. Further, the tip side of the arrow indicating the X direction of the XY orthogonal coordinate system is sometimes called the +X side, and the opposite side is sometimes called the -X side.

<Circuit configuration example>
As shown in FIG. 2, the semiconductor device 100 includes a plurality of switching elements 10 and a plurality of freewheeling diodes 20 (also simply referred to as diodes 20) each connected in antiparallel to the plurality of switching elements 10. Further, the semiconductor device 100 includes a pair of upper arm control terminals T8 and T9, a pair of lower arm control terminals T2 and T3, a high potential terminal T7 to which a high potential is applied, and a low potential terminal to which a low potential is applied. T5 and T6, and an output terminal T4 electrically connected to the load 200. The semiconductor device 100 can output the high potential applied to the high potential terminal T7 to the output terminal T4. As a result, the high potential applied to the high potential terminal T7 is supplied to the load 200. Further, the semiconductor device 100 can output the low potential applied to the low potential terminals T5 and T6 to the output terminal T4. As a result, the low potential applied to the low potential terminals T5 and T6 is supplied to the load 200. The high potential terminal T7 is also called a high potential side power supply terminal, and the low potential terminals T5 and T6 are also called low potential side power supply terminals.

The plurality of switching elements 10 include a plurality of switching elements 10U electrically connected to the high potential terminal T7, and a plurality of switching elements 10L electrically connected to the low potential terminals T5 and T6. The plurality of switching elements 10U are connected in parallel with each other, and the plurality of switching elements 10L are connected in parallel with each other.

The plurality of diodes 20 include a plurality of diodes 20U each connected in antiparallel to the plurality of switching elements 10U, and a plurality of diodes 20L each connected in antiparallel to the plurality of switching elements 10L. The plurality of diodes 20U are connected in parallel with each other, and the plurality of diodes 20L are connected in parallel with each other.

The plurality of switching elements 10U and the plurality of diodes 20U constitute an upper arm UA that is a switching circuit that outputs a high potential to the output terminal T4. Further, the plurality of switching elements 10L and the plurality of diodes 20L constitute a lower arm LA, which is a switching circuit that outputs a low potential to the output terminal T4. Upper arm UA and lower arm LA are connected in series. Hereinafter, upper arm UA and lower arm LA may be referred to as switching circuit UA and switching circuit LA, respectively.

The semiconductor device 100 includes, for example, eight switching elements 10. For example, upper arm UA includes four switching elements 10U, and lower arm LA includes four switching elements 10L. Further, the semiconductor device 100 includes, for example, eight diodes 20. For example, upper arm UA includes four diodes 20U, each corresponding to four switching elements 10U, and lower arm LA includes four diodes 20L, each corresponding to four switching elements 10L.

The switching element 10 includes a control electrode, a positive electrode, and a negative electrode. A control signal for controlling on/off of the switching element 10 is input to the control electrode. When the switching element 10 is in the on state, a main current flows between the positive electrode and the negative electrode. The positive electrode is an electrode into which the main current flowing to the switching element 10 flows when the switching element 10 is in the on state. The positive electrode is sometimes called the current inflow electrode. The negative electrode is an electrode through which the main current flowing through the switching element 10 flows when the switching element 10 is in the on state. The negative electrode is sometimes called a current sink electrode. Moreover, each of the positive electrode and the negative electrode may be called a main electrode.

Each switching element 10 is, for example, an IGBT (Insulated Gate Bipolar Transistor). Hereinafter, the switching elements 10, 10U, and 10L may be referred to as IGBTs 10, 10U, and 10L, respectively.

The IGBT 10 includes a gate electrode 11g, a collector electrode 11c, and an emitter electrode 11e. The gate electrode 11g, the collector electrode 11c, and the emitter electrode 11e function as a control electrode, a positive electrode, and a negative electrode, respectively. The diode 20U includes a cathode electrode 21k and an anode electrode 21a.

In the upper arm UA, the collector electrodes 11c of the plurality of IGBTs 10U are electrically connected to each other, and the emitter electrodes 11e of the plurality of IGBTs 10U are electrically connected to each other. Further, in the upper arm UA, the cathode electrodes 21k of the plurality of diodes 20U are electrically connected to each other, and the anode electrodes 11a of the plurality of diodes 20U are electrically connected to each other. The collector electrode 11c of each IGBT 10U is electrically connected to the cathode electrode 21k of the corresponding diode 20U and the high potential terminal T7. The emitter electrode 11e of each IGBT 10U is electrically connected to the anode electrode 21a of the corresponding diode 20U, the upper arm control terminal T9, and the output terminal T4. The gate electrode 11g of each IGBT 10U is electrically connected to the upper arm control terminal T8.

In the lower arm LA, the collector electrodes 11c of the plurality of IGBTs 10L are electrically connected to each other, and the emitter electrodes 11e of the plurality of IGBTs 10L are electrically connected to each other. Further, in the lower arm LA, the cathode electrodes 21k of the plurality of diodes 20L are electrically connected to each other, and the anode electrodes 11a of the plurality of diodes 20L are electrically connected to each other. The collector electrode 11c of each IGBT 10L is electrically connected to the cathode electrode 21k of the corresponding diode 20L and the output terminal T4. The emitter electrode 11e of each IGBT 10L is electrically connected to the anode electrode 21a of the corresponding diode 20L, the lower arm control terminal T2, the low potential terminal T5, and the low potential terminal T6. The gate electrode 11g of each IGBT 10L is electrically connected to the lower arm control terminal T3.

In the semiconductor device 100 having the circuit configuration as described above, each IGBT 10U of the upper arm UA performs an on/off operation according to a control voltage applied between the upper arm control terminals T8 and T9. Further, each IGBT 10L of the lower arm LA performs on/off operation according to the control voltage applied between the lower arm control terminals T2 and T3. When each IGBT 10L of the lower arm LA is in the off state and each IGBT 10U of the upper arm UA is turned on, a high potential is output from the output terminal T4 and applied to the load 200. At this time, in each IGBT 10U, a main current flows between the collector electrode 11c and the emitter electrode 11e. Main current flows. On the other hand, when each IGBT 10U of the upper arm UA is in the off state and each IGBT 10L of the lower arm LA is in the on state, a low potential is output from the output terminal T4 and applied to the load 200. At this time, in each IGBT 10L, a main current flows between the collector electrode 11c and the emitter electrode 11e.

<Structure example>
Next, a structural example of the semiconductor device 100 will be described. The IGBT 10 is, for example, a semiconductor chip (also called a wafer chip or die) made of silicon, silicon carbide, gallium nitride, etc., on which wiring, electrodes, etc. are formed. As shown in FIG. 1, a gate electrode 11g and an emitter electrode 11e are formed on one main surface 10a of the IGBT 10. A collector electrode 11c is formed on the other main surface of the IGBT 10. The gate electrode 11g, the emitter electrode 11e, and the collector electrode 11c are made of metal such as aluminum, copper, or gold, for example.

The diode 20 is, for example, a semiconductor chip made of silicon, silicon carbide, gallium nitride, or the like, on which wiring, electrodes, and the like are formed. As shown in FIG. 1, an anode electrode 21a is formed on one main surface 20a of the diode 20, and a cathode electrode 21k is formed on the other main surface of the diode 20. The anode electrode 21a and the cathode electrode 21k are made of metal such as aluminum, copper, or gold, for example.

As shown in FIG. 1, the semiconductor device 100 includes, for example, a substrate 1 and a plurality of conductive patterns 2 to 9 provided on the surface of the substrate 1. The plurality of conductive patterns 2 to 9 are located apart from each other on the substrate 1. The substrate 1 is, for example, an insulating substrate made of ceramic or the like. A plurality of conductive patterns 2 to 9 are provided on one main surface 1a of the substrate 1. The conductive patterns 2 to 9 are, for example, metal foils made of copper, aluminum, or the like. The conductive patterns 2 to 9 are sometimes called circuit patterns or wiring patterns.

For example, the conductive patterns 2 to 4 and 7 to 9 are arranged in this order along the X direction. The conductive pattern 2 is located closest to the −X side, and the conductive pattern 9 is located closest to the +X side. The shapes of the conductive patterns 2 to 4 and 7 to 9 are, for example, rectangles that are long in the Y direction. For example, the conductive patterns 2, 3, 8, and 9 have the same shape and size. For example, the conductive patterns 4 and 7 have the same shape and size. For example, the lengths of the conductive patterns 2 to 4 and 7 to 9 in the Y direction are the same. For example, the lengths of conductive patterns 4 and 7 in the X direction are larger than the lengths of conductive patterns 2, 3, 8, and 9 in the X direction.

The conductive patterns 5 and 6 are arranged, for example, along the Y direction. The conductive pattern 6 is located on the +Y side, and the conductive pattern 5 is located on the -Y side. Conductive patterns 5 and 6 are located between conductive pattern 4 and conductive pattern 7 in the X direction. The shape of the conductive patterns 5 and 6 is, for example, a square. For example, the conductive patterns 5 and 6 have the same shape and size. For example, the lengths of conductive patterns 5 and 6 in the Y direction are smaller than the lengths of conductive patterns 2 to 4 and 7 to 9 in the Y direction. For example, the lengths of conductive patterns 5 and 6 in the X direction are larger than the lengths of conductive patterns 2, 3, 8, and 9 in the X direction, and smaller than the lengths of conductive patterns 4 and 7 in the X direction.

Note that the shapes and sizes of the conductive patterns 2 to 9 are not limited to the above examples. Further, the arrangement of the conductive patterns 2 to 9 is not limited to the above example.

An upper arm UA is arranged on the conductive pattern 7. A plurality of IGBTs 10U and a plurality of diodes 20U of the upper arm UA are mounted on the conductive pattern 7. The IGBT 10U is mounted on the conductive pattern 7 such that its collector electrode 11c is located on the conductive pattern 7 side. The diode 20U is mounted on the conductive pattern 7 such that its cathode electrode 21k is located on the conductive pattern 7 side. The collector electrode 11c of each IGBT 10U and the cathode electrode 21k of each diode 20U are bonded to the conductive pattern 7 using a conductive bonding material such as solder. Thereby, the collector electrode 11c of each IGBT 10U and the cathode electrode 21k of each diode 20U are electrically connected to the conductive pattern 7.

The plurality of IGBTs 10U are arranged, for example, along the Y direction. The plurality of diodes 20U are arranged, for example, in the Y direction. For example, each IGBT 10U is lined up with its corresponding diode 20U in the X direction. The IGBT 10U is located, for example, on the +X side of the diode 20U. Therefore, the IGBT 10U is placed closer to the conductive patterns 8 and 9 than the diode 20U.

A lower arm LA is arranged on the conductive pattern 4. A plurality of IGBTs 10L and a plurality of diodes 20L of the lower arm LA are mounted on the conductive pattern 4. The IGBT 10L is mounted on the conductive pattern 4 so that its collector electrode 11c is located on the conductive pattern 4 side. The diode 20L is mounted on the conductive pattern 4 so that its cathode electrode 21k is located on the conductive pattern 4 side. The collector electrode 11c of each IGBT 10L and the cathode electrode 21k of each diode 20L are bonded to the conductive pattern 4 using a conductive bonding material such as solder. Thereby, the collector electrode 11c of each IGBT 10L and the cathode electrode 21k of each diode 20L are electrically connected to the conductive pattern 4.

The plurality of IGBTs 10L are arranged, for example, in the Y direction. The plurality of diodes 20L are arranged, for example, in the Y direction. For example, each IGBT 10L is lined up with its corresponding diode 20L in the X direction. For example, the IGBT 10L is located on the -X side of the diode 20L. Therefore, the IGBT 10L is placed closer to the conductive patterns 2 and 3 than the diode 20L.

In the semiconductor device 100, for example, one IGBT 10U and one diode 20U forming a pair in the upper arm UA, and one IGBT 10L and one diode 20L forming a pair in the lower arm LA are arranged along the X direction. They are lined up.

Note that the arrangement of the plurality of IGBTs 10 is not limited to the above example. Furthermore, the arrangement of the plurality of diodes 20 is not limited to the above example.

The semiconductor device 100 includes a plurality of wiring members 35, as shown in FIG. Each wiring member 35 is, for example, a conductive wire. Each wiring member 35 is made of metal such as aluminum, copper, or gold, for example. The plurality of wiring members 35 may include a plurality of wiring members made of the same material, or may include a plurality of wiring members made of different materials.

The plurality of wiring members 35 include, for example, a plurality of wiring members 30U, a plurality of wiring members 30L, a plurality of wiring members 31U, a plurality of wiring members 31L, a plurality of wiring members 32U, and a plurality of wiring members 32L. , a plurality of wiring members 33 , and a plurality of wiring members 34 . Hereinafter, the wiring members 30U, 30L, 31U, 31L, 32U, 32L, 33, and 34 may be referred to as conductive wires 30U, 30L, 31U, 31L, 32U, 32L, 33, and 34, respectively.

The gate electrode 11g of each IGBT 10U of the upper arm UA is electrically connected to the conductive pattern 8 by at least one conductive wire 30U. The gate electrode 11g of the IGBT 10U may be electrically connected to the conductive pattern 8 with one conductive wire 30U (see FIG. 1), or with a plurality of conductive wires 30U. good. The gate electrodes 11g of the plurality of IGBTs 10U are electrically connected to each other by a conductive member consisting of a conductive pattern 8 and a plurality of conductive wires 30U.

One end of the conductive wire 30U (also referred to as wire 30U) is joined to the gate electrode 11g of the IGBT 10U. One end of the wire 30U is directly bonded to the gate electrode 11g without using a bonding material such as solder, for example. Hereinafter, such bonding may be referred to as direct bonding. Direct bonding may be achieved, for example, using ultrasonic waves (ultrasonic bonding), thermocompression bonding (thermocompression bonding), or a combination of ultrasonic waves and thermocompression bonding. (thermocompression bonding combined with ultrasonic waves). The other end of the wire 30U is joined to the conductive pattern 8. The other end of the wire 30U is, for example, directly joined to the conductive pattern 8.

Hereinafter, unless otherwise specified, when wires 35 such as conductive wires 31U and 32U are bonded to a certain member, it is assumed that the wires 35 are directly bonded to the certain member.

The emitter electrode 11e of each IGBT 10U is electrically connected to the conductive pattern 9 with at least one conductive wire 31U. The emitter electrode 11e of the IGBT 10U may be electrically connected to the conductive pattern 9 by one conductive wire 31U (see FIG. 1), or by a plurality of conductive wires 31U. good. The emitter electrodes 11e of the plurality of IGBTs 10U are electrically connected to each other by a conductive member consisting of a conductive pattern 8 and a plurality of conductive wires 31U. One end of the conductive wire 31U (also referred to as wire 31U) is joined to the emitter electrode 11e of the IGBT 10U. The other end of the wire 31U is joined to the conductive pattern 9.

The emitter electrode 11e of each IGBT 10U is electrically connected to the anode electrode 21a of the corresponding diode 20U by at least one conductive wire 32U. The emitter electrode 11e of the IGBT 10U may be electrically connected to the anode electrode 21a by a plurality of conductive wires 32U (for example, two conductive wires 32U) (see FIG. 1), or by a single conductive wire 32U. It may be electrically connected. One end of the conductive wire 32U (also referred to as wire 32U) is joined to the emitter electrode 11e of the IGBT 10U. The other end of the wire 32U is joined to the anode electrode 21a.

The anode electrode 21a of each diode 20U is electrically connected to the conductive pattern 4 with at least one conductive wire 34. The anode electrode 21a of the diode 20U may be electrically connected to the conductive pattern 4 by a plurality of conductive wires 34 (for example, two conductive wires 34) (see FIG. 1), or by one conductive They may be electrically connected by wires 34. One end of the conductive wire 34 (also referred to as wire 34) is joined to the anode electrode 21a of the diode 20U. The other end of the wire 34 is joined to the conductive pattern 4.

As described above, the collector electrode 11c of the IGBT 10L of the lower arm LA is electrically connected to the conductive pattern 4. On the other hand, the emitter electrode 11e of the IGBT 10U of the upper arm UA is electrically connected to the conductive pattern 4 through two wires 32U and two wires 34. Therefore, the emitter electrode 11e of the IGBT 10U of the upper arm UA is electrically connected to the collector electrode 11c of the IGBT 10L of the lower arm LA through a conductive member consisting of two wires 32U and two wires 34.

The gate electrode 11g of each IGBT 10L of the lower arm LA is electrically connected to the conductive pattern 3 by at least one conductive wire 30L. The gate electrode 11g of the IGBT 10L may be electrically connected to the conductive pattern 3 by one conductive wire 30L (see FIG. 1), or by a plurality of conductive wires 30L. good. The gate electrodes 11g of the plurality of IGBTs 10L are electrically connected to each other by a conductive member including a conductive pattern 3 and a plurality of conductive wires 30L. One end of the conductive wire 30L (also referred to as wire 30L) is joined to the gate electrode 11g of the IGBT 10L. The other end of the wire 30L is joined to the conductive pattern 3.

The emitter electrode 11e of each IGBT 10L is electrically connected to the conductive pattern 2 with at least one conductive wire 31L. The emitter electrode 11e of the IGBT 10L may be electrically connected to the conductive pattern 2 with one conductive wire 31L (see FIG. 1), or with a plurality of conductive wires 31L. good. The emitter electrodes 11e of the plurality of IGBTs 10L are electrically connected to each other by a conductive member consisting of the conductive pattern 2 and the plurality of conductive wires 31L. One end of the conductive wire 31L (also referred to as wire 31L) is joined to the emitter electrode 11e of the IGBT 10L. The other end of the wire 31L is joined to the conductive pattern 2.

The emitter electrode 11e of each IGBT 10L is electrically connected to the anode electrode 21a of the corresponding diode 20L by at least one conductive wire 32L. The emitter electrode 11e of the IGBT 10L may be electrically connected to the anode electrode 21a by a plurality of conductive wires 32L (for example, two conductive wires 32L) (see FIG. 1), or may be electrically connected to the anode electrode 21a by a single conductive wire 32L. may be connected to each other. One end of the conductive wire 32L (also referred to as wire 32L) is joined to the emitter electrode 11e of the IGBT 10L. The other end of the wire 32L is joined to the anode electrode 21a.

The anode electrode 21a of each diode 20L is electrically connected to the conductive pattern 5 or 6 through at least one conductive wire 33. The anode electrode 21a of the diode 20L may be electrically connected to the conductive pattern 5 or the conductive pattern 6 with a plurality of conductive wires 33 (for example, two conductive wires 33) (see FIG. 1), They may be electrically connected by one conductive wire 33. In the example of FIG. 1, the anode electrodes 21a of the first and second diodes 20L from the +Y side among the plurality of diodes 20L are electrically connected to the conductive pattern 6. Further, among the plurality of diodes 20L, the anode electrodes 21a of the third and fourth diodes 20L from the +Y side are electrically connected to the conductive pattern 5. One end of the conductive wire 33 (also referred to as wire 33) is joined to the anode electrode 21a of the diode 20L. The other end of the wire 33 is joined to the conductive pattern 5 or 6.

Upper arm control terminals T8 and T9 are electrically connected to the conductive patterns 8 and 9, respectively. A control voltage applied between upper arm control terminals T8 and T9 is applied between gate electrode 11g and emitter electrode 11e of each IGBT 10U through conductive patterns 8 and 9.

Lower arm control terminals T2 and T3 are electrically connected to the conductive patterns 2 and 3, respectively. A control voltage applied between the lower arm control terminals T2 and T3 is applied between the gate electrode 11g and the emitter electrode 11e of each IGBT 10L through the conductive patterns 2 and 3.

A high potential terminal T7 is electrically connected to the conductive pattern 7. The high potential applied to the high potential terminal T7 is supplied to the collector electrode 11c of each IGBT 10U through the conductive pattern 7.

Low potential terminals T5 and T6 are electrically connected to the conductive patterns 5 and 6, respectively. The low potential applied to the low potential terminal T5 is supplied to the emitter electrode 11e of the IGBT 10L through the conductive pattern 5. Further, the low potential applied to the low potential terminal T6 is supplied to the emitter electrode 11e of the IGBT 10L through the conductive pattern 6.

An output terminal T4 is electrically connected to the conductive pattern 4. When each IGBT 10U is in the on state, a high potential is applied to the output terminal T4 through the conductive pattern 4. On the other hand, when each IGBT 10L is in the on state, a low potential is applied to the output terminal T4 through the conductive pattern 4.

In the semiconductor device 100 having the above structure, as shown in FIG. 1, an impedance IM1 due to the wire 31U and the conductive pattern 9 exists between the emitter electrodes 11e of two adjacent IGBTs 10U in the upper arm UA. do. Impedance IM2 due to wires 32U and 34 exists between emitter electrode 11e of IGBT 10U of upper arm UA and conductive pattern 4. An impedance IM3 due to the wire 31L and the conductive pattern 2 exists between the emitter electrodes 11e of two adjacent IGBTs 10L in the lower arm LA. An impedance IM4a due to the conductive wire 33 exists between the conductive pattern 5 and the emitter electrode 11e of the IGBT 10L electrically connected to the conductive pattern 5 through the conductive wire 33. An impedance IM4b due to the conductive wire 33 exists between the conductive pattern 6 and the emitter electrode 11e of the IGBT 10L electrically connected to the conductive pattern 6 through the conductive wire 33.

In the semiconductor device 100 of this example, the upper arm UA (in other words, the switching circuit UA) includes at least one element pair 110 consisting of adjacent switching elements 10U whose emitter electrodes 11e are directly connected to each other by a wiring member 40U. Further, the upper arm UA includes at least one element pair 111 consisting of adjacent switching elements 10U whose emitter electrodes 11e are not directly connected to each other by the wiring member 40U. In the example of FIG. 1, the element pair 110 is surrounded by a broken line, and the element pair 111 is surrounded by a dashed line. The wiring member 40U is, for example, a conductive wire. The wiring member 40U is made of metal such as aluminum, copper, or gold, for example.

Hereinafter, the wiring member 40U may be referred to as a conductive wire 40U. Furthermore, like the element pair 110, an element pair consisting of adjacent switching elements 10 whose emitter electrodes 11e are directly connected to each other by a wiring member 40U may be referred to as a connected element pair. Further, like the element pair 111, an element pair consisting of adjacent switching elements 10 whose emitter electrodes 11e are not directly connected to each other by the wiring member 40U may be referred to as an unconnected element pair.

In the example of FIG. 1, the upper arm UA includes a plurality of connecting element pairs 110. The plurality of connection element pairs 110 include, for example, a connection element pair 110a located on the +Y side and a connection element pair 110b located on the -Y side. The connecting element pair 110a includes a first switching element 10U from the +Y side and a second switching element 10U from the +Y side. The connection element pair 110b includes a third switching element 10U from the +Y side and a fourth switching element 10U from the +Y side.

In the connection element pair 110, a conductive wire 40U (also referred to as wire 40U) is connected to the emitter electrode 11e of one switching element 10U and the emitter electrode 11e of the other switching element 10U. Thereby, the emitter electrode 11e of one switching element 10U and the emitter electrode 11e of the other switching element 10U are electrically connected by the conductive wire 40U. One end of the conductive wire 40U is, for example, directly connected to the emitter electrode 11e of one switching element 10U of the connecting element pair 110. The other end of the conductive wire 40U is, for example, directly connected to the emitter electrode 11e of the other switching element 10U of the connecting element pair 110.

In the example of FIG. 1, upper arm UA includes one unconnected element pair 111. The unconnected element pair 111 (also referred to as the unconnected element pair 111a) included in the semiconductor device 100 in FIG. 1 is composed of the second switching element 10U from the +Y side and the third switching element 10U from the +Y side. . The emitter electrode 11e of the second switching element 10U from the +Y side and the emitter electrode 11e of the third switching element 10U from the +Y side are not directly connected by the wiring member 40U.

The −Y side switching element 10U of the connected element pair 110a and the +Y side switching element 10U of the unconnected element pair 111a are the same element. Further, the +Y side switching element 10U of the connected element pair 110b and the -Y side switching element 10U of the unconnected element pair 111a are the same element.

The lower arm LA (in other words, the switching circuit LA) includes at least one connection element pair 120 consisting of adjacent switching elements 10L whose emitter electrodes 11e are directly connected to each other by a wiring member 40L. Further, the lower arm LA includes at least one unconnected element pair 121 consisting of adjacent switching elements 10L whose emitter electrodes 11e are not directly connected to each other by the wiring member 40L. In the example of FIG. 1, the element pair 120 is surrounded by a broken line, and the element pair 121 is surrounded by a dashed line. The wiring member 40L is, for example, a conductive wire. The wiring member 40L is made of metal such as aluminum, copper, or gold, for example. Hereinafter, the wiring member 40L may be referred to as a conductive wire 40L.

In the example of FIG. 1, lower arm LA includes one pair of connecting elements 120. In the example of FIG. The connecting element pair 120 (also referred to as the connecting element pair 120a) included in the semiconductor device 100 in FIG. 1 includes a second switching element 10L from the +Y side and a third switching element 10L from the +Y side. The emitter electrode 11e of the second switching element 10L from the +Y side and the emitter electrode 11e of the third switching element 10L from the +Y side are not directly connected by the wiring member 40L.

In the example of FIG. 1, lower arm LA includes a plurality of unconnected element pairs 121. The plurality of unconnected element pairs 121 includes, for example, an unconnected element pair 121a located on the +Y side and an unconnected element pair 121b located on the -Y side. The unconnected element pair 121a includes the first switching element 10L from the +Y side and the second switching element 10L from the +Y side. The unconnected element pair 121b includes the third switching element 10L from the +Y side and the fourth switching element 10L from the +Y side.

In the connection element pair 120a, a conductive wire 40L (also referred to as wire 40L) is connected to the emitter electrode 11e of one switching element 10L and the emitter electrode 11e of the other switching element 10L. Thereby, the emitter electrode 11e of one switching element 10L and the emitter electrode 11e of the other switching element 10L are electrically connected by the conductive wire 40L. One end of the conductive wire 40L is, for example, directly connected to the emitter electrode 11e of one switching element 10L of the connecting element pair 120a. The other end of the conductive wire 40L is, for example, directly connected to the emitter electrode 11e of the other switching element 10L of the connecting element pair 120a.

The −Y side switching element 10L of the unconnected element pair 121a and the +Y side switching element 10L of the connected element pair 120a are the same element. Further, the +Y side switching element 10L of the unconnected element pair 121b and the -Y side switching element 10L of the connected element pair 120a are the same element.

As described above, in this example, the switching circuit UA includes an element pair 110 consisting of adjacent switching elements 10U in which the emitter electrodes 11e are directly connected to each other by the wiring member 40U, and an element pair 110 consisting of adjacent switching elements 10U in which the emitter electrodes 11e are directly connected to each other by the wiring member 40U. The device includes an element pair 111 consisting of adjacent switching elements 10U that are not connected to each other. This makes it difficult for unnecessary oscillations to occur in the switching circuit UA. This point will be explained in detail below.

In the switching circuit UA in which a plurality of switching elements 10U are connected in parallel, potential oscillation occurs at the control electrode (gate electrode 11g) of the switching element 10U due to the parasitic capacitance of the switching element 10U and the parasitic inductance between the switching elements 10U. there is a possibility. As a result, feedback amplification may occur, and voltage and current oscillations may occur in the switching element 10U. Such oscillation is sometimes called gate oscillation when the control electrode is a gate electrode.

In this example, since the emitter electrodes 11e of adjacent switching elements 10U constituting the element pair 110 are directly connected to each other by the wiring member 40U, the difference in switching characteristics between the adjacent switching elements 10U is Can be made smaller. This makes it difficult for voltage and current oscillations to occur in the switching element 10U. In other words, unnecessary oscillations based on potential oscillations at the control electrode are less likely to occur.

On the other hand, in the switching circuit UA, there is a possibility that the switching element 10U alone may oscillate. For example, PETT oscillation (plasma extraction transit time oscillation) is known as oscillation by the switching element 10U alone. When the emitter electrodes 11e of all the switching elements 10U included in the switching circuit UA are connected by the wiring member 40U, there is a possibility that the oscillation of the switching element 10U alone will be amplified by resonance amplification.

In this example, since the switching circuit UA includes an element pair 111 consisting of adjacent switching elements 10U whose emitter electrodes 11e are not directly connected to each other by the wiring member 40U, the resonance gain can be lowered. Therefore, the oscillation of the switching element 10U alone becomes difficult to amplify. As a result, in the switching circuit UA, unnecessary oscillations based on oscillations of the switching element 10U alone are less likely to occur.

Similarly, the switching circuit LA includes an element pair 120 consisting of adjacent switching elements 10L whose emitter electrodes 11e are directly connected to each other by a wiring member 40L, and an element pair 120 consisting of adjacent switching elements 10L whose emitter electrodes 11e are not directly connected to each other by a wiring member 40L. Since the switching circuit LA includes the element pair 121 consisting of the switching elements 10, unnecessary oscillations are less likely to occur in the switching circuit LA.

In addition, in this example, since the collector electrodes 11c of the plurality of switching elements 10U of the switching circuit UA are joined to the same conductive pattern 7 on the substrate 1, the connection between the collector electrodes 11c of the plurality of switching elements 10U is Impedance can be lowered. Similarly, since the collector electrodes 11c of the plurality of switching elements 10L of the switching circuit LA are joined to the same conductive pattern 4 on the substrate 1, the connection impedance between the collector electrodes 11c of the plurality of switching elements 10L is reduced. be able to.

The configuration of the semiconductor device 100 is not limited to the above example. For example, as shown in FIG. 3, in the lower arm LA, the first switching element 10L from the +Y side and the second switching element 10L from the +Y side may be directly connected by a wiring member 40L. In the example of FIG. 3, the lower arm LA includes a connected element pair 120b instead of the unconnected element pair 121a. The connecting element pair 120b includes a first switching element 10L from the +Y side and a second switching element 10L from the +Y side.

As another example, in the lower arm LA shown in FIG. 1, the third switching element 10L from the +Y side and the fourth switching element 10L from the +Y side may be directly connected by a wiring member 40L. Furthermore, in the upper arm UA shown in FIG. 1, the first switching element 10U from the +Y side and the second switching element 10U from the +Y side do not need to be directly connected by the wiring member 40L. In this case, the second switching element 10U from the +Y side and the third switching element 10U from the +Y side may be directly connected by the wiring member 40L. Furthermore, in the upper arm UA shown in FIG. 1, the third switching element 10U from the +Y side and the fourth switching element 10U from the +Y side do not need to be directly connected by the wiring member 40L. In this case, the second switching element 10U from the +Y side and the third switching element 10U from the +Y side may be directly connected by the wiring member 40L.

As another example, each of the upper arm UA and lower arm LA of the semiconductor device 100 may include two IGBTs 10, three IGBTs 10, or five or more IGBTs 10. Good too. FIG. 4 is a schematic plan view showing an example of the structure of the semiconductor device 100 when each of the upper arm UA and the lower arm LA includes six IGBTs 10.

The upper arm UA included in the semiconductor device 100 (also referred to as the semiconductor device 100A) shown in FIG. 4 includes six IGBTs 10U and six diodes 20U respectively corresponding to the six IGBTs 10U. For example, the six IGBTs 10U are lined up along the Y direction, and the six diodes 20U are lined up, for example, along the Y direction. Similarly to FIG. 1, each IGBT 10U is lined up with its corresponding diode 20U in the X direction.

The lower arm LA of the semiconductor device 100A includes six IGBTs 10L and six diodes 20L corresponding to the six IGBTs 10L, respectively. The six IGBTs 10L are lined up, for example, along the Y direction, and the six diodes 20L are lined up, for example, along the Y direction. Similarly to FIG. 1, each IGBT 10L is lined up with its corresponding diode 20L in the X direction.

In the semiconductor device 100A, the anode electrodes 21a of the first, second, and third diodes 20L from the +Y side are electrically connected to the conductive pattern 6 as in FIG. 1. Further, the anode electrodes 21a of the fourth, fifth, and sixth diodes 20L from the +Y side are electrically connected to the conductive pattern 5 in the same manner as in FIG. 1.

The upper arm UA of the semiconductor device 100A includes, for example, a pair of connected elements 110c and 110d and a pair of unconnected elements 111b, 111c, and 111d. The connecting element pair 110c is composed of a second switching element 10U from the +Y side and a third switching element 10U from the +Y side. The connecting element pair 110d includes a fourth switching element 10U from the +Y side and a fifth switching element 10U from the +Y side. The unconnected element pair 111b includes the first switching element 10U from the +Y side and the second switching element 10U from the +Y side. The unconnected element pair 111c includes a third switching element 10U from the +Y side and a fourth switching element 10U from the +Y side. The unconnected element pair 111d includes a fifth switching element 10U from the +Y side and a sixth switching element 10U from the +Y side.

The −Y side switching element 10U of the unconnected element pair 111b and the +Y side switching element 10U of the connected element pair 110c are the same element. The −Y side switching element 10U of the connected element pair 110c and the +Y side switching element 10U of the unconnected element pair 111c are the same element. The -Y side switching element 10U of the unconnected element pair 111c and the +Y side switching element 10U of the connected element pair 110d are the same element. The −Y side switching element 10U of the connected element pair 110d and the +Y side switching element 10U of the unconnected element pair 111d are the same element.

The lower arm LA of the semiconductor device 100A includes, for example, a pair of connected elements 120c and 120d and a pair of unconnected elements 121c, 121d, and 121e. The connecting element pair 120c includes a first switching element 10L from the +Y side and a second switching element 10L from the +Y side. The connecting element pair 120d includes a fifth switching element 10L from the +Y side and a sixth switching element 10L from the +Y side. The unconnected element pair 121c is composed of the second switching element 10L from the +Y side and the third switching element 10L from the +Y side. The unconnected element pair 121d includes the third switching element 10L from the +Y side and the fourth switching element 10L from the +Y side. The unconnected element pair 121e includes a fourth switching element 10L from the +Y side and a fifth switching element 10L from the +Y side.

The −Y side switching element 10L of the connected element pair 120c and the +Y side switching element 10L of the unconnected element pair 121c are the same element. The −Y side switching element 10L of the unconnected element pair 121c and the +Y side switching element 10L of the unconnected element pair 121d are the same element. The -Y side switching element 10L of the unconnected element pair 121d and the +Y side switching element 10L of the unconnected element pair 121e are the same element. The −Y side switching element 10L of the unconnected element pair 121e and the +Y side switching element 10L of the connected element pair 120d are the same element.

Also in the semiconductor device 100A, the switching circuit UA includes an element pair 110 consisting of adjacent switching elements 10U whose emitter electrodes 11e are directly connected to each other by a wiring member 40U, and an element pair 110 consisting of adjacent switching elements 10U whose emitter electrodes 11e are directly connected to each other by a wiring member 40U. Since the element pair 111 is composed of switching elements 10U that are not adjacent to each other, unnecessary oscillations are less likely to occur in the switching circuit UA. Similarly, the switching circuit LA includes an element pair 120 consisting of adjacent switching elements 10L whose emitter electrodes 11e are directly connected to each other by a wiring member 40L, and an element pair 120 consisting of adjacent switching elements 10L whose emitter electrodes 11e are not directly connected to each other by a wiring member 40L. Since the switching circuit LA includes the element pair 121 consisting of the switching elements 10, unnecessary oscillations are less likely to occur in the switching circuit LA.

In the above example, in the upper arm UA, the number of parallel IGBTs 10U and the number of parallel diodes 20U are the same, but they may be different. Further, in the above example, in the lower arm LA, the number of IGBTs 10L in parallel and the number of diodes 20L in parallel are the same, but they may be different. FIG. 5 is a schematic plan view showing an example of the structure of a semiconductor device 100 (referred to as a semiconductor device 100B) in this case.

In the semiconductor device 100B, in each of the upper arm UA and the lower arm LA, the number of IGBTs 10 in parallel is 4, and the number of diodes 20 in parallel is 5, for example. In each of upper arm UA and lower arm LA, five diodes 20 are lined up along the Y direction. In each of upper arm UA and lower arm LA, a row of four IGBTs 10 and a row of five diodes 20 face each other in the X direction.

In the upper arm UA, four diodes 20U, excluding the third diode 20U from the +Y side, are connected in antiparallel to the four IGBTs 10U, respectively, as in FIG. 1, among the plurality of diodes 20U. The third diode 20U from the +Y side is connected in antiparallel to both the second IGBT 10U from the +Y side and the third IGBT 10U from the +Y side. The anode electrode 21a of the third diode 20U from the +Y side has at least one wire 32U for each of the emitter electrode 11e of the second IGBT 10U from the Y side and the emitter electrode 11e of the third IGBT 10U from the +Y side. electrically connected. The anode electrode 21a of the third diode 20U from the +Y side is electrically connected to the emitter electrode 11e of the second IGBT 10U from the Y side and the emitter electrode 11e of the third IGBT 10U from the +Y side using one wire 32U. (see FIG. 4), or may be electrically connected using a plurality of wires 32U. The anode electrode 21a of each diode 20U is electrically connected to the conductive pattern 4 by at least one wire 34, as in FIG.

In the lower arm LA, the four diodes 20L, excluding the third diode 20L from the +Y side, are connected in antiparallel to the four IGBTs 10L, as in FIG. 1, among the plurality of diodes 20L. The third diode 20L from the +Y side is connected in antiparallel to both the second IGBT 10L from the +Y side and the third IGBT 10L from the +Y side. The anode electrode 21a of the third diode 20L from the +Y side is connected with at least one wire 32L to each of the emitter electrode 11e of the second IGBT 10L from the Y side and the emitter electrode 11e of the third IGBT 10L from the +Y side. electrically connected. The anode electrode 21a of the third diode 20L from the +Y side is electrically connected to each of the emitter electrode 11e of the second IGBT 10L from the Y side and the emitter electrode 11e of the third IGBT 10L from the +Y side using one wire 32L. (see FIG. 4), or may be electrically connected using a plurality of wires 32L.

The anode electrodes 21a of the first and second diodes 20L from the +Y side are electrically connected to the conductive pattern 6 by at least one wire 33, as in FIG. Further, the anode electrodes 21a of the fourth and fifth diodes 20L from the +Y side are electrically connected to the conductive pattern 5 by at least one wire 33, as in FIG. The anode electrode 21a of the third diode 20L from the +Y side is electrically connected to the conductive pattern 6 through at least one wire 33, and is electrically connected to the conductive pattern 5 through at least one wire 33. It is connected to the. The anode electrode 21a of the third diode 20L from the +Y side may be electrically connected to the conductive pattern 5 or the conductive pattern 6 with one wire 33 (see FIG. 4), or with a plurality of wires 33. It may be electrically connected.

Upper arm UA of semiconductor device 100B includes, for example, a pair of connected elements 110a and 110b and a pair of unconnected elements 111a, like upper arm UA shown in FIG. 1. Like the lower arm LA shown in FIG. 1, the lower arm LA of the semiconductor device 100B includes, for example, a connected element pair 120a and an unconnected element pair 121a and 121b. Also in the semiconductor device 100B, since the switching circuit UA includes the connected element pair 110 and the unconnected element pair 111, unnecessary oscillations are less likely to occur in the switching circuit UA. Similarly, since the switching circuit LA includes the connected element pair 120 and the unconnected element pair 121, unnecessary oscillations are less likely to occur in the switching circuit LA.

Note that the switching element 10 may be other than IGBT. The switching element 10 may be, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In this case, the gate electrode, drain electrode, and source electrode of the MOSFET function as a control electrode, a positive electrode, and a negative electrode, respectively. Further, instead of the pair of switching element 10 and diode 20, a single element in which a switching element and a freewheeling diode are combined, for example, a reverse conducting IGBT (RC-IGBT) may be used.

Moreover, the wiring member 35 may be other than a conductive wire. For example, the wiring member 35 may be a conductive ribbon. In addition, the wiring member 35 may not be directly bonded to the member to be bonded, but may be bonded with a conductive bonding material such as solder.

Moreover, the wiring member 40U may be other than a conductive wire. For example, the wiring member 40U may be a conductive ribbon. Further, the wiring member 40U may not be directly bonded to the member to be bonded, but may be bonded with a conductive bonding material such as solder.

Moreover, the wiring member 40L may be other than a conductive wire. For example, the wiring member 40L may be a conductive ribbon. Further, the wiring member 40L may not be directly joined to the member to be joined, but may be joined using a conductive joining material such as solder.

Although the present disclosure has been described in detail, the above description is in all respects illustrative and not restrictive. It is understood that countless variations not illustrated may be envisioned.

Further, the embodiments can be modified or omitted as appropriate.

4, 7 conductive pattern, 10, 10L, 10U switching element, 11c collector electrode, 11e emitter electrode, 40L, 40U wiring member, 110, 110a, 110b, 110c, 110d, 111a, 111b, 111c, 111d, 120, 120a, 120b, 120c, 120d, 121a, 121b, 121c, 121d element pair, UA upper arm (switching circuit), LA lower arm (switching circuit).

Claims (7)

A substrate and
a first switching circuit provided on the substrate and having a plurality of first switching elements connected in parallel to each other,
Each of the plurality of first switching elements has a first control electrode, a first positive electrode, and a first negative electrode,
The first positive electrodes of the plurality of first switching elements are electrically connected to each other by being joined to the same first conductive pattern on the substrate,
The first negative electrodes of the plurality of first switching elements are directly connected to the same second conductive pattern on the substrate with a wiring member,
The first switching circuit includes:
a first element pair consisting of adjacent first switching elements in which the first negative electrodes are directly connected to each other by a wiring member;
and a second element pair consisting of adjacent first switching elements whose first negative electrodes are not directly connected to each other by a wiring member. The semiconductor device according to claim 1,
A semiconductor device, wherein one first switching element of the first element pair and one first switching element of the second element pair are the same element. The semiconductor device according to claim 2,
The first switching circuit further includes a third element pair consisting of adjacent first switching elements in which the first negative electrodes are directly connected to each other by a wiring member,
A semiconductor device, wherein one first switching element of the third element pair and the other first switching element of the second element pair are the same element. The semiconductor device according to claim 2,
The first switching circuit further includes a third element pair consisting of adjacent first switching elements in which the first negative electrodes are directly connected to each other by a wiring member,
A semiconductor device, wherein one first switching element of the third element pair and the other first switching element of the first element pair are the same element. The semiconductor device according to claim 2,
The first switching circuit further includes a third element pair consisting of adjacent first switching elements whose first negative electrodes are not directly connected to each other by a wiring member,
A semiconductor device, wherein one first switching element of the third element pair and the other first switching element of the first element pair are the same element. The semiconductor device according to claim 2,
The first switching circuit further includes a third element pair consisting of adjacent first switching elements whose first negative electrodes are not directly connected to each other by a wiring member,
A semiconductor device, wherein one first switching element of the third element pair and the other first switching element of the second element pair are the same element. The semiconductor device according to any one of claims 1 to 6,
further comprising a second switching circuit provided on the substrate and having a plurality of second switching elements connected in parallel to each other,
The second switching circuit is connected in series with the first switching circuit,
Each of the plurality of second switching elements has a second control electrode, a second positive electrode, and a second negative electrode,
The second positive electrodes of the plurality of second switching elements are electrically connected to each other by being joined to the same third conductive pattern on the substrate,
The second switching circuit includes:
a fourth element pair consisting of adjacent second switching elements in which the second negative electrodes are directly connected to each other by a wiring member;
A semiconductor device including a fifth element pair consisting of adjacent second switching elements whose second negative electrodes are not directly connected to each other by a wiring member.

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