CN102804291A - 场发射系统和方法 - Google Patents
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Abstract
本发明描述了一种用于产生磁场发射结构(104a)的方法和系统。在一个实施方式中,该方法包括下列步骤:产生多个磁场(102a);以及使可磁化材料(104a)上的多个位置暴露于所述多个磁场以创建多个磁场源,所述多个磁场源具有根据对应于力函数的代码元素的极性。
Description
发明人:
拉里·W·弗勒顿
技术领域
本发明总体上涉及一种场发射系统和方法。更具体地说,本发明涉及其中关连的磁场和/或电场结构根据场发射结构的相对调准(alignment)以及空间力函数来产生空间力的一种系统和方法。
背景技术
磁场的调准特性已经用于实现对象的精确移动和定位。交变电流(AC)电机的关键操作原理在于:永磁体会旋转以便保持器在外部旋转磁场内的调准。这种效应是早期AC电机的基础,所述早期AC电机包括1888年5月1日授予Nikola Tesla的美国专利381,968的“Electro Magnetic Motor(电磁电机)”。在1938年1月19日,Marius Lavet因为首次用于石英手表中的步进电动机而被授予法国专利823,395。步进电机将电机的整个旋转划分成多个不连续的步长。通过控制电机周围的电磁体被启用和禁用的次数,电机的位置可以得到精确控制。计算机控制式步进电机是最通用形式的定位系统的其中之一。所述计算机控制式步进电机通常作为开环系统的一部分以数字方式控制,并且比闭环伺服系统更简单且更结实。它们用于工业用高速拾取和放置装置以及多轴计算机数控(CNC)机器。在激光器和光学器件领域中,它们常常用于诸如线性致动器、线性台(stage)、旋转台、角度计、以及镜架的精确定位装置中。它们用在封装机器中,并用于流体控制系统的阀引流级(valve pilot stage)的定位。它们还用在很多商用产品中,包括软盘驱动器、平板扫描仪、打印机、绘图仪等。
尽管磁场的调准特性用在特定专用工业环境以及数量相对有限的商用产品中,但将其用于精确调准范围却通常有限。在对象调准较重要的大多数过程(例如,住宅建造)中,更普遍使用的是诸如木工的直角尺和水平仪的相当原始的调准技术和工具。此外,当用于将对象附连在一起的诸如锤子和钉子、螺丝刀和螺丝钉、扳手和螺帽以及螺栓等的常用工具和机构与原始调准技术一起使用时,将导致住宅建造不准确,这在住屋垮塌、屋顶在风暴中会被吹走时常常会造成死亡和受伤。通常,在大多数所述过程中会存在大量的时间和能量的浪费,人们已经对此习惯,这是装配对象的不准确调准的直接结果。机加工零件会很快被磨损,发动机效率较低导致较高的污染,建筑物和桥梁因不合理的建造而发生坍塌等。
已经发现各种场发射特性可以用于广泛的应用场合。
发明内容
简而言之,本发明是一种改进的场发射系统和方法。本发明涉及这样的场发射结构,其包括具有对应于期望空间力函数的量级(magnitude)、极性和位置的电场或磁场源,其中基于场发射结构的相对调准和所述空间力函数来产生空间力。本文中的本发明有时称作关连磁学、关连场发射、关连磁体、编码磁体、编码磁学、或编码场发射。根据本发明布置的磁体的结构有时称为编码磁体结构、编码结构、场发射结构、磁场发射结构、以及编码磁性结构。按常规(或‘自然地’)布置的磁体结构其相互作用的电极是交替的,这种磁体结构在本文中指非关连磁学、非关连磁体、非编码磁学、非编码磁体、非编码结构、以及非编码场发射。
根据本发明的一个实施方式,场发射系统包括第一场发射结构和第二场发射结构。第一和第二场发射结构均包括场发射源阵列,每个场发射源均具有与期望空间力函数相关的位置和极性,所述期望空间力函数对应于第一和第二场发射结构在场畴(field domain)内的相关调准。每个场发射源阵列中的每个场发射源的位置和极性可以根据至少一个关连函数确定。所述至少一个关连函数可以根据至少一种代码。所述至少一种代码可以是伪随机码、确定码、或设计码中的至少一种。所述至少一种代码可以是一维码、二维码、三维码或四维码。
每个场发射源阵列中的每个场发射源均具有根据期望空间力函数确定的对应场发射幅度和矢量方向,其中第一和第二场发射结构与第一和第二场发射结构的相对调准之间的分离距离根据期望空间力函数而形成了空间力。该空间力包括相吸空间力或相斥空间力中的至少一种。当所述第一和第二场发射结构基本上调准以使得所述第一场发射结构的每个场发射源基本上与所述第二场发射结构的对应场发射源调准时,所述空间力对应于所述期望空间力函数的峰值空间力。所述空间力可以用于产生能量、转移能量、移动对象、附着对象、自动操作功能、控制工具、发声、加热环境、冷却环境、影响环境压力、控制流体流动、控制气体流动、以及控制离心力。
在一种布置中,当第一和第二场发射结构没有基本上调准以使得所述第一场发射结构的场发射源基本上与所述第二场发射结构的对应场发射源调准时,所述空间力通常为大约小于峰值空间力的量级。
场畴对应于与来自第二场发射结构的第二场发射源阵列的场发射相互作用的来自第一场发射结构的第一场发射源阵列的场发射。
第一和第二场发射结构的相对调准可以由第一和第二场发射结构中至少一个的相应移动路径函数产生,其中所述相应移动路径函数是一维移动路径函数、二维移动路径函数或三维移动路径函数的其中之一。相应移动路径函数可以是线性移动路径函数、非线性移动路径函数、旋转移动路径函数、柱面移动路径函数、或球面移动路径函数中的至少一个。相应移动路径函数定义用于第一和第二场发射结构中的至少一个的相对时间的移动,其中所述移动可以为下列移动中的至少一项:向前移动、向后移动、向上移动、向下移动、向左移动、向右移动、偏转(yaw)、倾斜(pitch)、和/或滚动。在一种布置中,移动路径函数会定义具有随时间而变化的方向和幅度的移动矢量。
每个发射场源阵列可以是一维阵列、二维阵列、或三维阵列的其中之一。场发射源的极性可以是北-南极性或阳-阴极性中的至少一种。场发射源中的至少一个包括磁场发射源或电场发射源。场发射源中的至少一个可以为永磁体、电磁体、电永磁体(electro-permanent magnet)、驻极体、磁化铁磁性材料、磁化铁磁性材料的一部分、软磁材料、或超导磁性材料。所述第一和第二场发射结构中的至少一个可以为下列项中的至少一个:后保磁层(back keeper layer)、前饱和层、有源中间元件、无源中间元件、杠杆、闩锁、转节、热源、散热器、感应环、电镀镍铬合金导线、嵌入式导线、或切断机制(kill mechanism)。所述第一场发射结构和第二场发射结构中的至少一个可以是平面结构、圆锥结构、圆柱结构、弯曲表面或阶梯表面。
根据本发明的另一个实施方式,控制场发射的方法包括:定义与第一场发射结构和第二场发射结构在场畴内的相对调准对应的期望空间力函数,以及根据所述期望空间力函数来确立对应于第一场发射结构的第一场发射源阵列中的每个场发射源的以及对应于第二场发射结构的第二场发射源阵列中的每个场发射源的位置和极性。
根据本发明的又一个实施方式,场发射系统包括:第一场发射结构,其包括多个第一场发射源,所述第一场发射源具有根据第一关连函数的位置和极性;以及第二场发射结构,其包括多个第二场发射源,所述第二场发射源具有根据第二关连函数的位置和极性,所述第一和第二关连函数对应于期望空间力函数,所述第一关连函数与所述第二关连函数互补以便所述多个第一场发射源中的每个场发射源具有所述多个第二场发射源中的对应的相对场发射源,并且当场发射源相对物中的每一个基本调准时第一和第二场发射结构基本上相关连。
附图说明
参考附图对本发明进行说明。在附图中,相同的参考标号表示相同或功能相似的元件。此外,参考标号最左边的数字与该参考号最先出现的附图保持一致。
图1A至图1D描绘了用铁磁性材料制造磁场发射结构的示例方法;
图2A至图2E描绘了示例性磁场发射结构组件装置;
图3A描绘了示例性单极磁化电路;
图3B描绘了示例性双极磁化电路;
图3C和图3D描绘了用于生产高压感应线圈的示例性圆形导体的俯视图;
图3E和图3F描绘了图3C和图3D所示的圆形导体的三维视图;
图3G描绘了高压感应线圈;
图3H描绘了两个示例性圆形导线感应线圈;
图3I描绘了一个示例性平金属感应线圈;
图4A描绘了示例性编码磁性结构制造装置;
图4B描绘了一个替换示例性编码磁性结构制造装置;
图5描绘了一种示例性编码磁性结构制造方法;
图6A描绘了一种用于从磁化颗粒制成磁场发射结构的示例系统;
图6B描绘了另一种用于从磁化颗粒制成磁场发射结构的示例系统;
图7A描绘了一种用于从磁化颗粒制成磁场发射结构的示例性方法;以及
图7B描绘了另一种用于从磁化颗粒制成磁场发射结构的示例性方法。
具体实施方式
下文将参考附图更全面详细地说明本发明,附图中示出了本发明的优选实施方式。然而,本发明不应理解为限制于本文中所提出的实施方式,相反地,提供这些实施方式以使本公开是全面且完整的并把本发明范围充分传达给本领域技术人员。全文中相同的参考标号指相同的元件。
根据本发明,磁体可以为永磁体、非永磁体、电磁体、电永磁体,包括硬材料或软材料,并且可以是超导的。在一些应用中,磁体可以由驻极体代替。磁体可以几乎是任何大小的,从非常大到非常小,到包括纳米级。在非超导材料的情况下,一个磁畴具有最小的界限。然而,当材料由超导材料制成时,材料内的磁场可以如期望的那样复杂,并且实际上没有下尺寸界限,直到人们获得原子级。因为由分子大小的结构产生的电场和磁场可以被调整为具有关联特性,所以磁体也可以按原子级形成,例如纳米材料和大分子。
以纳米级,一个或多个单一磁畴可以用于编码,其中每个单一磁畴具有代码,并且磁场的量子化会是该磁畴。
根据本发明,磁(或电)场发射源的组合(在本文中称为磁场发射结构)可以根据具有期望的关连特性的代码创建。当将磁场发射结构与互补的或镜像的磁场发射结构调准时,各个磁场发射源全都调准,导致产生峰值空间吸引力,由此,磁场发射结构的非调准使得各个磁场发射源根据用于设计所述结构的代码而基本上彼此抵消。类似地,当将磁场发射结构与复制(duplicate)磁场发射结构调准时,各个磁场发射源全都调准,导致产生峰值空间排斥力,由此,磁场发射结构的非调准使得各个磁场发射源基本上彼此抵消。故此,根据场发射结构的相对调准以及空间力函数而产生空间力。如本文中所述,这些空间力函数可以用于实现精确调准和精确定位。此外,这些空间力函数能够实现精确地控制磁场和关联的空间力,从而能够实现用于以精确调准来附接对象的新形式附接装置以及用于控制对象的精确移动的新系统和方法。通常,空间力具有的量级取决于两个磁场发射结构的相对调准以及它们的对应空间力(或关连)函数、两个磁场发射结构之间的空间(或距离)、以及构成两个磁场发射结构的源的磁场强度和极性。
本发明的以下特性可以称为释放力(或释放机制),所述特性即,构成两个磁场发射结构的各个磁场源在它们失去调准时可以有效地彼此抵消。这种释放力或释放机制是用于产生磁场发射结构的关连代码的直接结果,并且所述释放力或释放机制可以根据所采用的代码而被呈现,无论磁场发射结构的调准是对应于排斥力还是吸引力。
编码理论领域的技术人员应了解,存在具有不同关连特性的多种不同类型的代码,这些代码已经用在出于信道化目的、能量传播、调制以及其他目的的通信中。这种代码的很多基本特性使它们可适用于产生本文中所述的磁场发射结构。例如,Barker码因其自相关特性而为公众所知。尽管Barker码在本文中是用于示例性目的,本领域中的因其自相关、互相关(cross-correlation,交叉相关)或其他特性而公知的其他形式的代码也可应用于本发明,包括,例如Gold码、Kasami序列、双曲线同余码、二次同余码、线性同余码、Welch-Costas阵列码(array code)、Golomb-Costas阵列码、伪随机码、混沌码、以及Optimal Golomb Ruler码等。通常可以采用任何代码。
本发明的相关原理可能需要使用保持机制来克服正常的“磁定向”行为,或者可能不需要。例如,相同磁场发射结构的磁体可以与其他磁体稀疏地分离(例如在稀疏阵列中),以便单个磁体的磁力基本上不相互作用,在这种情况下,单各磁体的极性可以根据代码变化,无需很大的保持力来防止磁力“翻转”磁体。磁体足够接近以使它们的磁力实质上相互作用,以便所述磁体的磁力正常地将使它们中的一个“翻转”,从而可以通过使用诸如粘合剂、螺丝钉、螺栓和螺帽等的保持机制来使所述磁体的磁矩矢量调准保持期望的定向。
图1A至图1D描述了磁场发射结构的生产方法。在图1A中,包括单个磁体阵列的第一磁场发射结构102a示出为处在铁磁材料104a(例如,铁)的下方,所述铁磁材料即将变成具有与第一磁场发射结构102a相同的代码的第二磁场发射结构。在图1B中,铁磁材料104a已经加热到其居里温度(对于反铁磁材料,则是加热到奈尔温度(Neel temperature))。随后使铁磁材料104a接触第一磁场发射结构102a并允许所述铁磁材料冷却。随后,铁磁材料104a呈现与第一磁场发射结构102a相同的磁场发射结构特性并成为磁化铁磁材料104b,所述磁化铁磁材料自身是磁场发射结构(如图1C所示)。如图1D所述,还应将另一铁磁材料104a加热至其居里温度并随后使该另一铁磁材料与磁化铁磁材料104b接触,该磁化铁磁材料也会呈现磁化铁磁材料104b的磁场发射结构特性(如图1C所示)。
用铁磁材料制造磁场发射结构的替换方法是使用一个或多个激光器来选择性地将铁磁材料上的场发射源位置加热至居里温度,并再使这些位置经受磁场。通过使用该方式,加热场发射源位置可能经受的磁场可以具有不变的极性或具有随时间变化的极性,以便在各个源位置被加热或冷却时为各个源位置编码。
为了产生超导磁场结构,当关连的磁场发射结构被冷却到其临界温度之下时,所述关连的磁场发射结构将被冷冻成为无电流存在的超导材料。
图2A-图2E描绘了示例性磁场发射结构组件装置,该磁场发射结构组件装置包括一个或多个真空镊子(vacuum tweezer)202,所述真空镊子能够把具有第一和第二极性的磁体200a和200b放置在支撑框206的机加工孔204内。磁体200a和200b取自至少一个磁体供应装置208并根据期望的代码被插入到支撑框206的孔204中。在一种配置中,采用了两个磁镊子,每一个磁镊子集成有其自身的磁体供应装置208,以允许真空镊子202只移动到下一个孔204,从而使磁体得以从所述装置内部被送进至真空镊子202内。磁体200a和200b可以用粘合剂(例如,胶水)在支撑框206内保持在位。可替换地,孔204以及磁体200a和200b可以具有螺纹,以便真空镊子202或替换的插入工具能将它们旋入适当位置中。图2C还描绘了完成的磁场组件210。在替换布置中,真空镊子每次会将不止一个的磁体放入框206内,包括同时放置所有的磁体。在又一种布置中,编码电磁体212的阵列用于同时拾取并放置所有待放入框206内的磁体214,其中这些磁体由类似于完成的磁场组件210的磁体供应装置216提供,以便磁体可以从下面被送进至每一个供应孔(如以208所示的)内,并且其中编码的电磁体吸引整个松散磁体的阵列。通过使用该方法,电磁体212的阵列可以凹入,以便存在像真空镊子202的底部那样的用于每个松散磁体的导向部(guide)218。通过使用该方法,整组松散磁体可以被插入至框206内,并且当先前施加的密封剂已经充分干燥时电磁体212的阵列可以转动以释放目前放置的磁体。在替换配置中,磁场发射结构组件装置会处于压力下。也可以使用真空将磁体保持在支撑框206中。
如上所述,在自动放置制造(automatic placement manufacturing)期间真空镊子可用于操作磁体。然而,这样小的表面区域上的真空力(例如,14.7psi(磅/平方英尺))可能不足以与磁力抗衡。如有必要,整个制造单元可以置于压力下。真空力随介质的压力而变。如果将工作空间加压至300psi(约为20个大气压),则在镊子末端1/16”上的力为约1磅,该力取决于磁体的磁强度,且可能足以与磁体的磁力抗衡。通常,每平方英寸磅数可以增加至需要用来产生操控磁体所需的握持力的任何大小。
如果放置磁体的基板背后有微小的孔,则也可用真空来将磁体保持在位,直到最终处理利用例如紫外线固化胶来将磁体永久地粘附。替换地,最终处理包括:加热基板以将它们全部融合在一起,或者,用密封剂来涂敷整个面,然后将整个面擦干净(或者在磁体面上留下薄膜),之后进行固化。在等待任何所使用的粘合剂或固定剂的同时,真空给出了操控组件的时间。
用诸如铁磁材料的可磁化材料来制造磁场发射结构的另一种替换方法包括:产生一个或多个磁场,并使材料的位置暴露于一个或多个磁场以在那些位置上产生场发射源,其中所述场发射源具有根据对应于期望力函数的代码元素的极性。所述力函数可以对应于空间力函数或电动(electro-motive)力函数中的至少一种。代码可以是补码或反补码。在一种配置中,代码只定义场发射源的极性。在另一种配置中,代码定义场发射源的极性以及场强度,在这种情况下,磁场发射源的强度可以变化以产生零旁瓣(sidelobe)或基本上为零的旁瓣(如先前关于零旁瓣编码技术所描述的)。
为了产生一个或多个磁场,可以施加电流到在传导片或传导板上的可以包括线圈或具有不连续性的感应元件。在一种配置中,线圈耦合至可以是具有高磁导率的材料的磁芯(core,铁芯),所述材料诸如:镍铁高导磁合金(Mu-metal)、坡莫合金(permalloy)、铁芯硅钢(electrical steel)或金属玻璃磁性合金(Metglas Magnetic Alloy)。
图3A描述了根据本发明的示例性单极磁化电路300。参考图3A,单极磁化电路300包括:高压直流源302、充电开关304、充电电阻306、一个或多个反向二极管(back diode)307、一个或多个储能电容器308、可控硅整流器(SCR)310、脉冲变压器312、以及磁化感应器314。在本文中磁化感应器314还称为磁化线圈、感应器线圈以及感应元件。脉冲变压器312接收触发脉冲以触发可控硅整流器310。触发脉冲可以由计算机控制系统或一开关提供。为了使用单极磁化电路300来磁化可磁化材料(例如铁磁材料)上的位置,充电开关闭合从而使来自高压直流源的能量存储在储能电容器308中。在期望的电压电平处(以及因此在存储能级处),脉冲变压器312可以由引线313处接收的触发脉冲触发,以触发SCR 310,从而导致强电流被传导至磁化感应器314内,这磁化了所述材料上的位置。磁化位置(或磁场源)的极性取决于磁化感应器314(或磁化线圈或感应元件)如何配置。磁场源的磁场强度(或幅度)很大程度上取决于触发SCR时达到的电压电平以及磁化感应器的特性。磁场源的大小和锐度(sharpness)很大程度上取决于磁化感应器的特性。
图3B描绘了根据本发明的示例性双极磁化电路315。双极磁化电路315类似于单极磁化电路300,只是该双极磁化电路包括四个SCR 310a-310d、四个脉冲变压器312a-312d以及两组引线313a、313b,而不是每种一个。四个SCR和四个脉冲变压器配置为桥接电路,以便两组导线313a、313b中的一组可以触发以产生具有第一极性的磁场源,并且两组导线313a、313b中的另一组可以触发以产生具有与第一极性相反的第二极性的场源,其中第一极性和第二极性为北极和南极或南极和北极,这取决于磁化感应器314如何装配。
图3C和3D描绘了根据本发明的用于产生高压感应线圈314的示例性圆导体316a、316b的顶视图。图3E和3F描绘了图3C和3D所示的圆导体的三维视图,并且图3G描绘了根据本发明的组装高压感应线圈314。参考图3C-3G,具有期望厚度的第一圆导体316a具有穿过其中的孔318a以及从所述孔延伸并横穿圆导体以在第一圆导体316a中形成中断的一裂隙开口(slotted opening)320a。第二圆导体316b也具有孔318b以及从所述孔延伸并横穿圆导体以在第二圆导体316b中形成中断的裂隙开口320b。第一和第二圆导体设计为使得它们可以在位于第一圆导体316a下方并且在第二圆导体316b上方的焊接接合部322处焊接在一起。除了焊接之外的其他附接技术也可以采用。在焊接到一起之前,将绝缘层324a、324b置于圆导体316a、316b中的每一个的下方,其中置于第一圆导体316a下方的绝缘层324a不覆盖焊接区322但可以使第一圆导体316a底部的剩余部分绝缘。当两个圆导体316a、316b焊接在一起时,两个圆导体之间的绝缘层324阻止电流在二者之间传导,除了焊接接合部322处之外。第二圆导体316b下方的第二绝缘层316b阻止电流传导至可磁化材料。因此,如果可磁化材料为非金属材料,例如为陶瓷材料,则不需要第二绝缘层316b。此外,即使可磁化材料具有通常不是很显著的传导性,则第二绝缘层316b的使用是可选的。第一线导体(wire conductor)326在挨着所述开口但是与焊接接合部相对的位置处焊接至第一圆导体316a顶部。第二圆导体316b在其底部具有可以接收第二线导体328的槽(或槽口)327,所述第二线导体可以焊接以使得第二圆导体316b的底部保持基本平坦。还可以采用其他替换方法来将第二线导体328连接至第二圆导体316b,包括将第二线导体328放入穿过第二圆导体316b的侧面钻出的孔并焊接第二线导体。如图3G所示,第二线导体328穿过两个圆导体316a、316b中的孔318被送进。由此,当两根线导体376、328和两个圆导体316a、316b焊接在一起且两个圆导体316a、316b之间带有绝缘层324时,它们形成两匝线圈,从而使电流可以进入第一圆导体326,围绕第一圆导体顺时针流动,穿过焊接接合部到达第二圆导体,围绕第二圆导体周围顺时针流动,并流出第二线导体,或者电流可以沿相反路径行进。由此,依据第一和第二线导体与磁化电路的连通性以及从磁化电路(300或315)接收的电流的方向,产生了南极性磁场源或北极性磁场源。
通常,磁场结构可以通过改变磁性材料关于感应线圈的位置而产生,因为可磁化材料是根据期望代码来进行磁化的。通过使用一种方法,可磁化材料保持在固定位置中而感应线圈的位置变化。通过使用另一种方法,感应线圈保持在固定位置而可磁化材料的位置变化,例如,使用XYZ图表。
本领域技术人员应了解,除圆形之外的形状,诸如正方形、椭圆形、六边形等也可以用于圆导体。由此,圆导体大体上可以表示具有中断的传导板。本领域技术人员还应了解,可以将不同的导电材料用于圆导体和线导体,例如,铜、银、金、黄铜、铝等。此外,通过在堆叠的顶部上添加附加的圆导体,多于两个的圆导体可以用与第一和第二导体相同的方式堆叠。由此,可以通过向堆叠添加圆导体来产生三匝、四匝或更多匝。
图3H描述了根据本发明的基于圆线感应线圈330、332的两个示例性磁化感应器314。第一圆线感应线圈330包括围绕感应磁芯334的两匝(turn)线。感应磁芯334可以是具有高磁导率的材料并且也是可选的,因为圆线感应线圈可以在没有感应磁芯334的情况下使用。第二圆线感应线圈332可以包括两匝线,其中所述线在两个线圈的中部拐上去。两种感应线圈均可使用额外的线圈匝数。
图3I描绘了根据本发明的基于平金属感应线圈336的示例性磁化感应器314。平金属感应线圈336可用于代替一个或多个圆导体316a、316b。平金属感应线圈336的结构类似于机灵鬼(Slinky)玩具,不同之处在于平金属感应线圈的平线圈更宽且穿过中心的孔更小。线圈匝数可以根据需要而变化。
在钕(NIB)磁体材料中产生饱和磁化(B场)所需的磁场是大量的(substantial),这样磁化线圈需要传导非常强的电流以产生所需的H场。支持相关磁学技术所需的第二个要求为,该磁场集中在非常小的点上并且其磁场不仅是可逆的而且是可变化的。庆幸的是,磁性材料的响应时间在亚微秒范围内,这使得该强磁场的持续时间很短暂。
基于电流脉冲发生器产生的脉冲磁场发生系统符合上述磁化电路300、315(参见图3A-图3G)。低感应的高压电容器用作电能源并且SCR用于将存储电荷接入磁化线圈。电流回路的电阻是固定的,这样电流随着电容器充电的电压线性变化。布线和其他导体的总环路电阻在0.001欧姆范围内,且电容器可以充电至高达2500伏特。因此,如果SCR开关和电容器为零电阻和零感应,则开关闭合状态下的瞬间电流可达250万安培。然而,实际上,由串接分流器(series shunt)所测量的瞬间电流约为10万安培。
所用的SCR为工业“冰球(hockey puck)”式样的,并且发现IR S77R串联装置即足够。使用桥式装置(见图3B)以允许电流脉冲的极性如所示那样由磁化线圈逆转。高压通过Pulse Corp.生产的脉冲变压器PE-65835而与触发源去耦合。经发现电路中的电感足够在足以关闭SCR的脉冲结束时引起电压逆转。直流-直流转换器用于产生为电容器充电所需的高压,期望的充电水平由计算机设置为特定场地所需的水平,极性由选则那个触发变压器对被供给触发脉冲来控制。
期望的是产生尽可能高的重复率,以便在尽可能短的时间内形成复杂的磁体模式。因此,为了保持尽可能低的能源存储需求,电流脉冲也保持很短。这会导致需要使用匝数很少的低感应线圈。期望保持磁场集中在非常小的区域内,这种期望还需要使用物理形态非常小的线圈。两个小的圆导体用于形成磁化线圈。每个圆导体均由铜制成,且直径为3/8英寸、厚度为0.0625英寸、具有1/8”直径的孔、以及宽0.016英寸的裂隙开口。线导体为#8铜线。绝缘层是1000th英寸厚的聚酰亚胺(Kapton)层。
如果用大致800伏的电压为电容器充电,则单极和双极脉冲磁场发生系统将各自产生持续时间为约20uS的磁脉冲,该磁脉冲会在钕(NIB)可磁化材料上产生半径大致0.1英寸且具有约4000高斯的磁场强度的磁场源。
在本文中描述了使用关连场发射结构(物体具有机械约束的动作)的几个实例。本领域技术人员应了解,众多其他已知的机制可用于约束或限定具有与物体关联的一个或多个场发射结构的物体的可允许运动,并且对可允许运动的了解可以用于设计或应用用于定义力函数的代码,无论是空间力函数和/或电动力函数。这类机制可以使用各种控制系统(包括为所述控制系统提供反馈的各种类型的传感器)进行控制。此外,本领域技术人员应了解,众多已知通信方法的任何一种(诸如射频(RF)通信)可用于启动、管理和/或停用这类控制系统,从而控制具有关联场发射结构的物体的行为。在电磁体和电永磁磁体的情况下,这类控制系统可用于改变用于控制对应场发射结构的互相作用的编码。
图4A描绘了根据本发明的示例性编码磁结构制造装置400。参考图4A,编码磁结构制造装置400包括经由第一接口406从存储器404选取代码的控制系统402。控制系统402经由第二接口408将供应材料控制信号发送至提供可磁化材料以根据代码进行磁化的可磁化材料供应移除器(remover)410。如图4A所示,可磁化材料被供应至能够移动可磁化材料412的可磁化材料处理器(handler)414。对于要在可磁化材料内磁化的每个磁源,控制系统经由第三接口416向导磁体415发送定义极性和磁场幅度(或强度)控制信号。在每一定义极性和磁场幅度控制信号,导磁体415均对其电容器充电。定义X、Y、Z坐标控制信号经由第四接口418发送给可磁化材料处理器。可磁化材料处理器将可磁化材料相对于导磁体(具体地,磁化感应器314,未示出)移动,以便所述材料上的适当位置将被磁化。在可磁化材料412已经被移动至相对于导磁体的适当位置后,控制系统402经由第五接口420发送触发信号给导磁体415。应注意的是,替换地,第三和第五接口416、420可以结合。一旦被触发信号触发,导磁体415导致强电流传导入磁化感应器314内,这会产生磁化可磁化材料412上的位置的磁场422。在所有源根据代码被磁化以后,控制系统402发送信号至可磁化材料供应移除器,以从制造装置400移除可磁化材料,从而允许对另外的可磁化材料重复制造过程。本领域技术人员应了解,如果单极磁化电路用于导磁体415中,则导磁体415可根据导磁体如何配置而仅磁化具有单一极性(例如,北向上或南向上)的磁源,除非在磁化之间对导磁体进行手工再配置。如果双极磁化电路315用在导磁体415中,则导磁体可以产生具有两种极性(例如,北向上和南向上)的磁源。本领域技术人员还应了解,可采用具有单极磁化电路300的两个不同导磁体415,其中一个导磁体配置为产生北向上极性的源,而另一个导磁体配置为产生南向上极性的源。
图4B描绘了替换的示例性编码磁结构制造装置400。除了可磁化材料处理器414由导磁体处理器424代替之外,它与图4A中所示的编码磁结构制造装置400相同。这样,两个装置400之间的不同之处在于,对于图4A所描绘的装置,可磁化材料移动时导磁体停留在固定位置,而对于图4B所描绘的装置,导磁体移动时可磁化材料停留在固定位置。本领域技术人员还应了解,可磁化材料和导磁体都可配置为移动,例如,导磁体可能只沿着Z尺度移动,而可磁化材料可能沿着X、Y维度移动,或反之亦然。通常,各种已知方法可用于提供可磁化材料和/或从所述装置上移除可磁化材料,并且相对于导磁体移动材料,从而控制对于给定源的磁化位置。
图5描绘了示例性编码磁结构制造方法500。参考图5,编码磁结构制造方法500包括第一步502,在该步骤选取对应于期望力函数的代码,其中,期望力函数可以为空间力函数或电动力函数。第二步504是将可磁化材料供应给磁化装置。第三步506是移动磁化装置的导磁体和/或待磁化的可磁化材料,以使可磁化材料上的期望位置可以根据选取的代码来磁化。第四步508是磁化可磁化材料上的期望源位置,以便所述源具有由代码定义的期望极性和磁场幅度(或强度)。第五步510是确定是否仍有额外的源需要磁化。如果有待磁化的额外的源,则所述方法返回到第三步506。否则执行第六步,在该步骤从磁化装置移除可磁化材料(现在按照代码进行磁化)。
图6A描绘了用于将从磁化颗粒制造磁场发射结构的示例性系统。参考图6A,该系统600包括磁化颗粒源602和粘合(binding)材料源604。第一流动控制装置606和第二流动控制装置608控制磁化颗粒和粘合材料被引入混合机构610的速率。控制系统612经由通信链路(backbone)613控制系统600的每个部件,通信链路可以是有线链路、无线链路、或二者的某种结合。层压或铸模源614向材料处理器616提供层压物(laminant)或铸模。混合物放置机构618将磁化颗粒和粘合材料的混合物放置入材料处理器上的层压物上(或铸模内)。混合物放置机构和材料处理器(以及可选地,铸模)配置为用于控制所放置的磁化颗粒和粘合材料混合物的混合物形状和大小。位于靠近所放置的磁化颗粒和粘合材料混合物的位置处的磁化编码机构引起磁化颗粒对应于磁化编码机构的编码磁源来定向磁化颗粒的极性。此后粘合材料硬化从而维持磁化颗粒的定向,以便产生随后由磁性结构移除器从制造系统600上移除的磁场结构。本领域技术人员应了解,可以采用众多不同种类的磁化颗粒。例如,磁化的球体或磁体削片可以用作磁化颗粒。本领域技术人员应了解,可以使用众多不同种类的粘合材料(诸如热塑性球形球团矿或粉末、焊料、胶水、溶剂等),并且也可以使用众多不同形状的铸模。通常本领域技术人员应了解,粘合材料可以在磁化颗粒通过磁化编码机构编码之前、之后和/或与此同时来进行液化(liquefy),其中粘合材料必须按照要求部分硬化,以便在磁化颗粒从磁化编码机构分离之前维持磁化颗粒的编码定向。此外,可以采用各种类型的磁性编码机构。利用一种方法,可以使用具有包括代码的多个代码模数的磁场结构的圆柱体,由此该圆柱体紧挨着材料处理器转动以便在磁化颗粒在层压物上或在铸模内移动经过时为磁化颗粒编码。利用另一种方法,磁场结构可以移动至靠近磁化颗粒和粘合材料的混合物,所述混合物在固定位置中停留了一段时间,与此同时材料处理器在该段时间内已经停止了层压物或铸模的移动。还使用另一种方法,磁场结构可以移动至靠近磁化颗粒和粘合材料的混合物,其中在混合物在材料处理器上移动了一段时间时,磁场结构随混合物一起移动,以使得粘合物充分硬化以维持磁化颗粒的定向。利用再一种方法,可以控制挨着材料处理器的电磁体阵列,以便为磁性颗粒编码。这种阵列可以在沿着材料处理器路径的一个点处或者可以跨越材料处理器路径的一定距离,由此磁性编码机构的代码可以在混合物沿着材料处理器路径移动时与混合物一起电子移动。
对于每个磁性编码机构,多个磁场源具有根据对应于期望力函数的期望代码的位置和极性。磁化颗粒将形成关于各个磁场源的组并基于那些磁场源的极性来对自身定向。例如,多个(例如,数十个、数百个等)磁化球形颗粒可以关于极性为‘南极向上’的一个磁场源来成组并且这些磁化球形颗粒自身进行旋转以便这些磁化球形颗粒的北极附接至磁场源的南极并与磁场源的南极对准。由此,一旦小磁化颗粒组经定向(经编码)并通过硬化粘合物而维持其定向,则该小磁化颗粒组随后将单一磁场源一起发挥作用,所述小磁化颗粒组与用于对小磁化颗粒编码的磁性编码机构的各个磁场源的组互补。给出多个磁场源,将会形成对应的多个磁化颗粒组,其中这些磁化颗粒组与磁性编码机构的磁场源互补。
对某些粘合材料而言,可选的热源624可以与系统600一起使用以便至少部分地液化所述粘合材料。如图所示,可以在粘合材料离开粘合材料源604时,以及在粘合材料与磁化颗粒相混合的同时、和/或在磁化颗粒和粘合材料的混合物已放置到层压物上之后但是在所述混合物和所述层压物暴露于磁性编码机构之前,施加来自这种热源624的热量。替换地(或附加地),可以在磁化颗粒已经在粘合材料内自身进行定向之后来施加热量。热量还可以施加于已经液化的粘合材料以便引起蒸发(例如溶剂的蒸发),从而使粘合材料凝固。
图6B描绘了用于从磁化颗粒制造磁场发射结构的替换示例系统626。如图6B所示,替换的系统626类似于图6A所示的系统600,但不是混合磁化颗粒和粘合材料并将混合物放置到层压物或铸模上,相反地,颗粒放置机构628只将磁化颗粒放置到层压物或铸模上,并且单独的粘合剂施加器机构将粘合剂材料施加到层压物或铸模上,这样粘合剂材料随后可以硬化以维持磁化颗粒的代码定向。如图所示,可以在放置磁性颗粒之前、在磁性颗粒放置之后但是在由磁性编码机构编码之前、和/或在由磁性编码机构编码之后,将粘合剂材料施加至层压物或铸模。替换地,粘合材料可以由粘合剂施加器机构630在任何时间量内施加,所述任何时间量于磁性颗粒被放至在层压物或铸模上之前开始并且于磁性颗粒被编码后结束。
同先前所述系统600一样,对某些粘合材料而言,可选的热源624可以与替换系统626一起使用以至少部分地液化粘合材料。如图所示,可以在粘合材料离开粘合材料源604时,以及在粘合材料被添加至粘合剂施加器机构630的同时、和/或在粘合剂材料被添加至层压物和/或放置的磁化颗粒的同时,施加来自这种热源624的热量。同先前所述系统一样,热量还可以施加于已经液化的粘合材料以便引起蒸发(例如溶剂的蒸发),从而使粘合材料凝固。
图7A描绘了用于从磁化颗粒制造磁场发射结构的示例方法700。参考图7A,方法700包括三个步骤。第一步骤702是将磁化颗粒和粘合材料混合。第二步骤704是将磁化颗粒和粘合材料的混合物放置到层压物或铸模上。第三步骤706是将磁化编码机构与颗粒与粘合剂的混合物调准,以使得颗粒定向其极性,从而产生磁场结构。
图7B描绘了另一种用于从磁化颗粒制造磁场发射结构的示例方法710。参考图7B,方法710包括四个步骤。第一步骤712是将磁化颗粒放置到层压物或铸模上;第二步骤714是将粘合材料施加至层压物或铸模上。应该注意的是,如相对于图6B所述的,将粘合材料施加至层压物或铸模上的步骤可以在将磁化颗粒放置到层压物或铸模上的步骤之前发生、同时发生或之后发生。第三步骤716是将磁化编码机构与层压物或铸模上的颗粒调准,以使得颗粒定向其极性,从而产生磁场结构。
根据本发明的关连场发射结构的示例性应用包括:
ο基于位置的功能控制。
ο回转仪、线性电机、风扇电机。
ο精确测量、精确定时。
ο计算机数控机器。
ο线性致动器、线性台、旋转台、角度计、镜架(mirror mount)。
ο汽缸、涡轮机、发动机(无热量允许重量轻的材料)
ο用于食品储藏的密封物。
ο脚手架。
ο结构梁、桁架、十字支撑(cross-barcing)。
ο桥构建材料(桁架)。
ο壁结构(立柱、镶板等)、地板、天花板、屋顶。
ο用于屋顶的磁遮板。
ο家具(组装和定位)。
ο图片框、图片挂架。
ο孩童安全座椅。
ο座椅安全带、挽具、装饰物(trapping)。
ο轮椅、病床。
ο玩具-自组装玩具、智力玩具、积木(例如乐高(Legos)、磁原木(magnetic log))。
ο手工工具-切割、钉子钉入、钻孔、锯割等。
ο精确机加工工具-钻床、车床、研磨机、压力机。
ο机器人移动控制。
ο装配线-对象移动控制、自动化部件组装。
ο包装机。
ο墙壁吊架-用于工具、扫帚、梯子等。
ο压力控制系统、精确液压。
ο牵引装置(例如,攀爬楼宇的窗户清洁器)。
ο气体/液体流速控制系统、管道系统、通风控制系统。
ο门/窗密封、舟/船/舰/太空飞船舱口密封。
ο飓风/风暴的遮挡板(shutter)、快速组装家庭龙卷风遮盖物(shelter)/防雪窗罩/空置建筑物的窗罩和门罩(例如,小木屋)。
ο门闩-室外门(防狗)、孩童安全门闩(防孩童)。
ο衣服钮扣、鞋/靴扣钩。
ο抽屉/橱柜门紧固件。
ο孩童安全装置-家用电器、盥洗室的锁紧机构等。
ο保险箱,安全处方药品储藏。
ο快速捕获/释放的商用捕鱼网、螃蟹笼。
ο能量转换-风、雨、波移动。
ο能量提取-从轮状物等提取。
ο麦克风、扬声器。
ο应用于太空(例如密封、用于宇航员握持/站立的握紧位置)。
ο经由磁场控制的模-数(以及反之)转换。
ο使用关连代码来影响硅芯片中的电路特性。
ο使用关连代码来实现毫微级机器的属性(力、扭矩、旋转和平移)。
ο用于假体膝部、肩部、臀部、脚踝、手腕等的球窝关节。
ο用于机器人臂的球窝关节。
ο沿着关连磁场轨道移动的机器人。
ο关连的手套、鞋。
ο关连的机器人“手”(用于移动、放置、提升、指引对象的所有种类的机构可以使用本发明)。
ο通信/符号体系。
ο滑雪橇/滑板/脚踏车运动鞋/滑雪板/滑水橇/靴子。
ο钥匙、锁紧机构。
ο货物集装箱(如何制造集装箱以及如何移动集装箱)。
ο信用卡、借记卡、以及ATM卡。
ο磁数据存储器、软盘、硬盘、CD、DVD。
ο扫描仪、打印机、绘图仪。
ο电视机和计算机监视器。
ο电动机、发电机、变压器。
ο夹盘、紧固装置、夹具。
ο安全标识标签。
ο门铰链。
ο珠宝、手表。
ο车辆制动系统。
ο磁悬浮列车和其他车辆。
ο磁共振成像以及核磁共振分光镜。
ο轴承(轮)、轮轴。
ο粒子加速器。
ο测量装置与对象(xyz控制器和磁探针)之间的安装座/用于三角架以及关联装置(例如,测量仪、照相机、望远镜、可拆卸传感器、电视摄像机、天线等)的安装座。
ο用于照明装置、音响系统、支柱、墙壁、物体等的安装座-例如,用于电影布景、演出、音乐会等,从而一旦物体在其先前调准的位置处分离、重新连接,则物体就调准。
ο犯罪现场调查用的具有标准观看角度、照明装置等的设备-能够实现再现性、鉴定等,以用于取证。
ο诸如喷漆枪喷嘴、蛋糕糖霜喷嘴、焊头、离子切割器、乙炔切割器、激光切割器等的可拆卸喷嘴,其中具有期望调准的快速移除/替换实现了节省时间。
ο包括底部上带有关连磁体的装饰雕像的灯罩附接装置,所述灯罩附接装置会将灯罩以及装饰物保持在位。
ο拖链/绳索。
ο降落伞背带。
ο士兵、杂务工、维修人员、电话修理工、潜水员等所用的网带。
ο用于高速移动的极尖锐物体的附接装置,所述极尖锐物体包括割草机刀片、轧边机、船舶螺旋桨、风扇、飞机螺旋推进器、台锯锯条、圆形锯条等。
ο用于身体部位移植系统、输血等的密封件。
ο灯球、广口瓶、木制、塑料、陶瓷、玻璃或金属容器。
ο用于酒瓶、汽水等的瓶密封件,其允许重新密封瓶子,包括在液体上施加真空或压力。
ο炊具密封件。
ο乐器。
ο车内物体(例如啤酒罐、GPS装置、电话机等)所用的附接点。
ο约束装置、手铐、脚链。
ο动物的皮带、项圈。
ο电梯、自动扶梯。
ο用于铁路、船舶、飞机上的大型存储容器。
ο地板垫扣环。
ο行李架/自行车架/独木舟架/货架。
ο自行车、轮椅用的拖车栓钩货物架。
ο拖车栓钩。
ο具有可简易展开斜道/可简易锁定斜道的拖车,适于货车、调度车等。
ο用于将割草机、其他设备保持在拖车上的装置。
ο用于加速货物搬运以便运输的18轮车(wheeler)应用装置。
ο电池盒盖所用的附接装置。
ο用于将耳塞附接至iPod或iPhone的连接器。
尽管已经说明了本发明的具体实施方式,然而,应了解的是,本发明不限于此,因为本领域技术人员可以对本发明做出修改,尤其是在根据前述教导的情况下。
Claims (20)
1.一种用于产生磁场发射结构的方法,所述方法包括下列步骤:
产生多个磁场;
使可磁化材料上的多个位置暴露于所述多个磁场以创建多个磁场源,所述多个磁场源具有根据对应于力函数的代码的元素的极性。
2.根据权利要求1所述的方法,其中,所述力函数对应于空间力函数。
3.根据权利要求1所述的方法,其中,所述代码包括补码或反补码中的至少一种。
4.根据权利要求1所述的方法,其中,所述多个磁场源的场强度根据所述代码的所述代码的元素。
5.根据权利要求4所述的方法,其中,所述多个磁场源的所述场强度变化以产生基本上为零的旁瓣。
6.根据权利要求1所述的方法,其中,所述代码包括零旁瓣代码。
7.根据权利要求1所述的方法,其中,产生多个磁场包括向感应元件施加电流。
8.根据权利要求7所述的方法,其中,所述感应元件包括线圈或具有中断的传导板中的至少一种。
9.根据权利要求8所述的方法,其中,所述线圈耦合至磁芯。
10.根据权利要求9所述的方法,其中,所述磁芯包括镍铁高导磁合金、坡莫合金、铁芯硅钢、或金属玻璃磁性合金的其中之一。
11.根据权利要求8所述的方法,其中,所述感应元件包括具有中断的多个传导板,所述传导板配置为产生多个线圈匝。
12.一种用于产生磁场发射结构的系统,包括:
可磁化材料;
用于产生多个磁场的导磁体,所述导磁体包括感应元件,所述感应元件使所述可磁化材料上的多个位置暴露于所述多个磁场以创建多个磁场源,所述多个磁场源具有根据对应于力函数的代码的元素的极性。
13.根据权利要求12所述的系统,所述导磁体还包括:
高压DC电源;
充电开关;
充电电阻;
一个或多个反向二极管;
一个或多个储能电容器;
可控硅整流器;以及
脉冲变压器。
14.根据权利要求13所述的系统,其中,所述导磁体还包括配置在桥接电路中的多个可控硅整流器和多个脉冲变压器。
15.根据权利要求12所述的系统,其中,所述导磁体是单极导磁体或双极导磁体中的一种。
16.根据权利要求12所述的系统,其中,所述多个磁场源的场强度能变化。
17.根据权利要求12所述的系统,其中,所述感应元件包括线圈或具有中断的传导板中的至少一种。
18.根据权利要求17所述的系统,其中,所述线圈耦合至磁芯。
19.根据权利要求18所述的系统,其中,所述磁芯包括镍铁高导磁合金、坡莫合金、铁芯硅钢、或金属玻璃磁性合金的其中之一。
20.根据权利要求17所述的系统,其中,所述感应元件包括具有中断的多个传导板,所述传导板配置为产生多个线圈匝。
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- 2010-05-27 CN CN201410377883.8A patent/CN104134514A/zh active Pending
- 2010-05-27 CN CN201080034377.9A patent/CN102804291B/zh active Active
- 2010-05-27 KR KR1020117031507A patent/KR20120027428A/ko not_active Application Discontinuation
- 2010-05-27 WO PCT/US2010/036443 patent/WO2010141324A1/en active Application Filing
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US20120286913A1 (en) | 2012-11-15 |
CN102804291B (zh) | 2015-12-09 |
CN104134514A (zh) | 2014-11-05 |
US8373526B2 (en) | 2013-02-12 |
US20150318088A1 (en) | 2015-11-05 |
US8461952B1 (en) | 2013-06-11 |
EP2438601A1 (en) | 2012-04-11 |
KR20120027428A (ko) | 2012-03-21 |
US20130141198A1 (en) | 2013-06-06 |
US20150022298A1 (en) | 2015-01-22 |
US9082539B2 (en) | 2015-07-14 |
US8410882B2 (en) | 2013-04-02 |
JP2012529181A (ja) | 2012-11-15 |
US20090278642A1 (en) | 2009-11-12 |
US8179219B2 (en) | 2012-05-15 |
US20130128407A1 (en) | 2013-05-23 |
US20120286912A1 (en) | 2012-11-15 |
US8643454B2 (en) | 2014-02-04 |
US8779877B2 (en) | 2014-07-15 |
US8593242B2 (en) | 2013-11-26 |
US20120284969A1 (en) | 2012-11-15 |
WO2010141324A1 (en) | 2010-12-09 |
EP2438601B1 (en) | 2017-03-29 |
US20130222097A1 (en) | 2013-08-29 |
JP5769177B2 (ja) | 2015-08-26 |
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