CN102789974A - Method for improving uniformity of shallow trench isolation chemical-mechanical planarization - Google Patents
Method for improving uniformity of shallow trench isolation chemical-mechanical planarization Download PDFInfo
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- CN102789974A CN102789974A CN2011101253193A CN201110125319A CN102789974A CN 102789974 A CN102789974 A CN 102789974A CN 2011101253193 A CN2011101253193 A CN 2011101253193A CN 201110125319 A CN201110125319 A CN 201110125319A CN 102789974 A CN102789974 A CN 102789974A
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Abstract
The invention discloses a method for improving uniformity of shallow trench isolation (STI) chemical-mechanical planarization (CMP). The method comprising: performing deposition to form silicon oxide isolated layer in a shallow trench, the silicon oxide isolated layer having a projecting part and a sunken part; performing ion implantation to change crystalline state of the projecting part; performing chemico-mechanical polishing on the silicon oxide isolated layer until a stop layer is exposed. According to the method for improving uniformity of shallow trench isolation chemical-mechanical planarization, the ion implantation and a silicon oxide CMP process are combined. Through performing ion implantation on silicon oxide of the projecting part, the projecting part's silicon oxide material removing rate of CMP grinding liquid is increased. In a STI CMP process, a purpose of reducing oxide layer thickness gap of the shallow trench's isolation area and non-isolation area is achieved, the oxide layers being disposed on the shallow trench's isolation area and non-isolation area, thereby improving planarization and uniformity of the STI CMP process and reducing sunken and defective degree.
Description
Technical field
The present invention relates to a kind of manufacturing approach of semiconductor device, particularly relate to the inhomogeneity method of a kind of raising shallow trench isolation ionization machinery planarization.
Background technology
Introduced shallow trench isolation since (STI) technology from the 0.25um technology node, making the device high density isolate becomes possibility.Constantly dwindle with technology node, for improving device density and isolation effect, the depth of shallow trench itself constantly increased than (aspect ratio is called for short AR) thereupon.High density plasma CVD (HDP-CVD) is the mainstream technology of filling shallow trench.The circulation technology of this technology through deposit limit, limit etching overcome the difficult problem of sealing that the groove top possibly exist, and accomplishes the filling to big AR groove structure, and silica-filled back effect sees accompanying drawing 1.Wherein be formed with pad oxide and silicon nitride layer 2 on the silicon substrate 1 successively, etching is adopted silica-filled these STI of HDP-CVD after being formed with the bigger STI of a plurality of AR, and the silica of deposition and the silicon dioxide of pad oxide couple together, and form silicon oxide layer 3.
With of the continuous increase of shallow trench depth than (aspect ratio); Behind HDP-CVD; Silicon oxide thickness drop with non-shallow channel isolation area (active region) top in the shallow channel isolation area becomes increasing, and this has proposed very big challenge for next step shallow trench isolation ionization machinery planarization (STI CMP) technology to the inhomogeneity control in chip wafer inside.Owing to there is the big silicon oxide thickness drop (difference in height at the top of silicon oxide layer 3 among Fig. 1; For example be
), in STI CMP technology, this thickness drop can't directly be eliminated through CMP technology; And heredity finishes to CMP technology always; Cause the interior part silica of shallow trench to grind off, form depression (dishing) defective, cause the device electric property to descend; Even the reduction of yield, see accompanying drawing 2.
Generally speaking, when current HDP-CVD filled the STI of high AR, bigger silicon oxide thickness official post got the CMP uniformity and reduces, and causes device defects.
Summary of the invention
Therefore, the objective of the invention is to improve STI CMP uniformity to improve the reliability of device.
The invention provides the inhomogeneity method of a kind of raising shallow trench isolation ionization machinery planarization, comprising: deposit forms the silica separator in shallow trench, and said silica separator has projection and sunk part; The execution ion injects, and changes the crystalline state of said projection; Said silica separator is carried out chemico-mechanical polishing, stop layer until exposing.
Wherein, the step that said ion injects comprises, on said silica separator, applies photoresist, exposes said projection after the exposure imaging, keeps the photoresist of said depressed part office, is that mask carries out vertical ion injection with the photoresist that keeps.Wherein, the mask plate that said exposure imaging uses is complementary with the mask plate that forms said shallow trench, removes said photoresist after vertical ion injects.
Wherein, the step that said ion injects comprises, confirms to inject inclination angle theta according to the height H of said projection and the width L of said shallow trench, with said inclination angle theta said projection is carried out angle-tilt ion and injects.Wherein, after carrying out said angle-tilt ion injection, comprise also the angle-tilt ion second time of said projection injected that the said angle-tilt ion injection second time is injected symmetrical with said angle-tilt ion.Wherein, realize that through rotation wafer or rotation injection source angle-tilt ion is injected and/or angle-tilt ion injection for the second time.
Wherein, the kind of said ion injection comprises H, C, N, B, BF
2, In, P, As, Sb and combination thereof.Wherein, the dosage of said ion injection is 1 * 10
14To 5 * 10
15/ cm
2, the injection energy is 10KeV to 150KeV.Wherein, SiO2 base lapping liquid or CeO2 base lapping liquid are used in said chemico-mechanical polishing.Wherein, hard polishing pad or soft polishing pad are used in said chemico-mechanical polishing.
According to the inhomogeneity method of raising shallow trench isolation ionization machinery planarization of the present invention; Adopted ion to inject and the compound use of silica CMP technology; Inject processing through the projection silica being carried out ion, improve the CMP lapping liquid projection oxide materials is removed speed.In STI CMP process, reach the purpose that reduces shallow channel isolation area and non-isolated area top thickness of oxide layer drop, thereby improve the planarization uniformity of STI CMP technology, promptly reduce the degree that produces depression defect.
Purpose according to the invention, and in these other unlisted purposes, in the scope of the application's independent claims, be able to satisfy.Embodiments of the invention are limited in the independent claims, and concrete characteristic is limited in its dependent claims.
Description of drawings
Followingly specify technical scheme of the present invention with reference to accompanying drawing, wherein:
Fig. 1 has shown that the HDP-CVD of prior art fills the generalized section of the STI of high AR;
Fig. 2 has shown the generalized section of the STI CMP of prior art;
Fig. 3 to Fig. 5 has shown the generalized section of injecting each step according to the vertical ion of one embodiment of the invention;
Fig. 6 and Fig. 7 have shown the generalized section of injecting each step according to the angle-tilt ion of another embodiment of the present invention; And
Fig. 8 and Fig. 9 have shown the generalized section according to each step of CMP after the ion injection of the present invention.
Embodiment
Following with reference to accompanying drawing and combine schematic embodiment to specify the characteristic and the technique effect thereof of technical scheme of the present invention, the inhomogeneity method of raising STI CMP is disclosed.It is pointed out that structure like the similar Reference numeral representation class, used term " first " among the application, " second ", " on ", D score or the like can be used for modifying various device architectures or processing step.These are modified is not space, order or the hierarchical relationship of hint institute's modification device architecture or processing step unless stated otherwise.
The applicant finds through a large amount of tests and data analysis thereof; After silica injects through ion; Its chemical bond and crystalline state are destroyed, and therefore can strengthen lapping liquid greatly ion is injected the chemical corrosion effect of handling silica, thereby improve its material removal rate.Therefore main thought of the present invention is to inject processing through the projection silica being carried out ion, improves the CMP lapping liquid projection oxide materials is removed speed.In STI CMP process, reach the purpose that reduces shallow channel isolation area and non-isolated area top thickness of oxide layer drop, thereby improve the planarization uniformity of STI CMP technology, promptly reduce the degree that produces depression defect.
Fig. 3 to Fig. 5 has shown that the vertical ion according to the embodiment of the invention 1 injects to improve the generalized section that silica removes each step of speed.
At first with reference to Fig. 3, on substrate 1, form pad silicon oxide layer and silicon nitride layer 2, photoetching/etching forms the STI of high AR, adopts the STI of HDP-CVD with silica-filled high AR then, and the silicon dioxide of filling engages with pad oxide and forms silica separator 3.After 3 deposits of silica separator are intact, the full wafer wafer is applied photoresist; The reverse light shield that leaves with shallow trench isolation (promptly used exposure mask plate is complementary with forming STI); Through overexposure, develop, the silica of non-shallow trench zone projection is come out; And retain the photoresist 4 that is positioned at the depressed part office, shown in lattice portion among Fig. 3 is divided.
Secondly,,, select the ions with proper injection condition, projection is carried out vertical ion inject processing, shown in Fig. 4 arrow according to the height of silica 3 projections with reference to Fig. 4.Ion injects the degree of depth and is equal to or less than silica drop thickness.Particularly, for silicon oxide thickness drop of the present invention do
The time, the ionic species of injection includes but not limited to H, C, N, B, BF
2, at least a and combination among In, P, As or the Sb, the dosage of injection is 1 * 10
14To 5 * 10
15/ cm
2, the injection energy is 10KeV to 150KeV.Carry out after the vertical ion injection; The zone that silicon oxide layer 3 tops are outstanding; Also be that non-sti region injects the ion atmosphere because be exposed to; Its chemical bond and crystalline state are destroyed, and therefore can strengthen lapping liquid greatly ion is injected the chemical corrosion effect of handling silica, thereby improve its material removal rate.
Once more,, after vertical ion injects, get rid of photoresist through wet etching or dry method and wet etching with reference to Fig. 5, and with drying wafer.Wet method is removed photoresist and can be used acetone and aromatic organic solvent, also can use sulfuric acid and hydrogen peroxide solution.Dry method is removed photoresist and can be adopted oxygen containing plasma reaction etching to remove photoresist, and organic photoresist is oxidized to gas and is taken away by vacuum system.In the silicon oxide layer 3 that protrudes among Fig. 5, the some line is partly represented because of ion injects the chemical bond and the crystalline state that take place and is destroyed.
Ion injects and changes after the silicon oxide layer crystalline state, continues to adopt CMP with the planarization silicon oxide layer, referring to accompanying drawing 8 and 9.The wafer that ion is injected after handling carries out silica CMP processing, sees Fig. 8, adopts polishing pad planarization silicon oxide layer 3 under the lapping liquid effect of rotation, until exposing the silicon nitride layer 2 that stops layer as CMP.CMP can adopt hard polishing pad or soft polishing pad, for example 0.08 inch thick Rodel IC1000 and 0.05 inch thick SUBA IV liner stack, and lap speed is about 25～90r/min, and pressure is at 3～8psi.The lapping liquid of CMP can be SiO
2The base lapping liquid also can be CeO
2The base lapping liquid, the lapping liquid flow is about 50～125mL/min, wherein can add KOH with softening silica.Because the silica of projection is after ion injects, its chemical bond and crystalline state are destroyed, and therefore can strengthen the chemical corrosion effect of lapping liquid to the protrusion silica; Improve in the CMP process protruding the speed that removes of silica; Thereby in process of lapping, can the thickness drop not entailed the silica in the shallow trench, reduce the depression of silica in the shallow trench; See Fig. 9, can know that the STI evenness that finally obtains is superior to the result that traditional C MP method as shown in Figure 2 obtains.
Fig. 6 to Fig. 7 has shown the generalized section that removes each step of speed according to the angle-tilt ion injection of the embodiment of the invention 2 with the raising silica.
With reference to Fig. 6, after 3 deposits of silica separator are intact, at first, confirm the inclination angle of injecting according to the height H and the spacing L of figure.When injecting for the assurance ion, the recess silica is not injected into, and needs to confirm to inject inclination angle theta, and its expression formula is θ ≈ arctan (H/L), promptly injects inclination angle theta yet and approximates arctan (H/L), and wherein H and L can be by layout design and the acquisitions of measurement means.Particularly, in the present invention, H is a silicon oxide layer thickness drop, for
L is the width of shallow trench STI, for example
Confirm to inject after the inclination angle, carry out angle-tilt ion and inject, the ionic species of injection includes but not limited to H, C, N, B, BF
2, at least a and combination among In, P, As or the Sb, the dosage of injection is 1 * 10
14To 5 * 10
15/ cm
2, the injection energy is 10KeV to 150KeV.The ion that injects is because the choose reasonable at inclination angle; Make its overwhelming majority all be distributed in non-sti region; Also be outstanding zones, silicon oxide layer 3 tops; Its chemical bond and crystalline state are destroyed, and therefore can strengthen lapping liquid greatly ion is injected the chemical corrosion effect of handling silica, thereby improve its material removal rate.
If the projection silicon oxide thickness is thicker, for guarantee that the silica of projection is injected as far as possible comprehensively; From symmetry direction, use identical inclination angle and injection condition to reinject once, see Fig. 7, on behalf of crystalline state, its mid point line partly be changed.This step injects and can whether confirm needs according to actual silicon oxide thickness; Can guarantee that projection all can be injected into ion and reach if inject for the first time, can not take this step symmetry to inject; If injection for the first time can not make projection be injected into ion and get to fully, need take this step symmetry to inject, the inclination angle theta of symmetry injection is with aforementioned identical.Can evenly be injected ion to guarantee projection, so that the crystalline state of projection can both change through rotating wafer or rotating the injection source and realize that angle-tilt ion is injected and/or angle-tilt ion injection for the second time for the first time.
Subsequently, with reference to Fig. 8 and Fig. 9, with embodiment 1 similarly, after ion inject to change the silica crystalline state, continue CMP with planarization STI.
According to the inhomogeneity method of raising shallow trench isolation ionization machinery planarization of the present invention; Adopted ion to inject and the compound use of silica CMP technology; Inject processing through the projection silica being carried out ion, improve the CMP lapping liquid projection oxide materials is removed speed.In STI CMP process, reach the purpose that reduces shallow channel isolation area and non-isolated area top thickness of oxide layer drop, thereby improve the planarization uniformity of STI CMP technology, promptly reduce the degree that produces depression defect.
Although with reference to one or more exemplary embodiments explanation the present invention, those skilled in the art can know and need not to break away from the scope of the invention and various suitable changes and equivalents are made in technological process.In addition, can make by disclosed instruction and manyly possibly be suitable for the modification of particular condition or material and do not break away from the scope of the invention.Therefore, the object of the invention does not lie in and is limited to as being used to realize preferred forms of the present invention and disclosed specific embodiment, and disclosed device architecture and manufacturing approach thereof will comprise all embodiment that fall in the scope of the invention.
Claims (10)
1. one kind is improved the inhomogeneity method of shallow trench isolation ionization machinery planarization, comprising:
Deposit forms the silica separator in shallow trench, and said silica separator has projection and sunk part;
The execution ion injects, and changes the crystalline state of said projection;
Said silica separator is carried out chemico-mechanical polishing, stop layer until exposing.
2. the step that the method for claim 1, wherein said ion injects comprises; On said silica separator, apply photoresist; Exposing said projection after the exposure imaging, keep the photoresist of said depressed part office, is that mask carries out vertical ion injection with the photoresist that keeps.
3. method as claimed in claim 2, wherein, the mask plate that said exposure imaging uses is complementary with the mask plate that forms said shallow trench, removes said photoresist after vertical ion injects.
4. the step that the method for claim 1, wherein said ion injects comprises, confirms to inject inclination angle theta according to the height H of said projection and the width L of said shallow trench, with said inclination angle theta said projection is carried out angle-tilt ion and injects.
5. method as claimed in claim 4 wherein, after carrying out said angle-tilt ion injection, comprises also the angle-tilt ion second time of said projection is injected that the said angle-tilt ion injection second time is injected symmetrical with said angle-tilt ion.
6. like claim 4 or 5 described methods, wherein, realize that through rotation wafer or rotation injection source said angle-tilt ion is injected and/or the said angle-tilt ion injection second time.
7. the kind that the method for claim 1, wherein said ion injects comprises H, C, N, B, BF
2, In, P, As, Sb and combination thereof.
8. the dosage that the method for claim 1, wherein said ion injects is 1 * 10
14To 5 * 10
15/ cm
2, the injection energy is 10KeV to 150KeV.
9. SiO is used in the method for claim 1, wherein said chemico-mechanical polishing
2Base lapping liquid or CeO
2The base lapping liquid.
10. hard polishing pad or soft polishing pad are used in the method for claim 1, wherein said chemico-mechanical polishing.
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| CN201110125319.3A CN102789974B (en) | 2011-05-16 | 2011-05-16 | Improve the method for shallow trench isolation from chemical-mechanical planarization uniformity |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097468A (en) * | 2014-05-21 | 2015-11-25 | 中国科学院微电子研究所 | Flattening process |
| CN105261550A (en) * | 2014-07-18 | 2016-01-20 | 中国科学院微电子研究所 | Chemical mechanical polishing method for germanium |
| CN108352357A (en) * | 2015-10-23 | 2018-07-31 | 应用材料公司 | For advanced CMP and the gap filling membrane modifying of groove stream |
| CN108597995A (en) * | 2018-05-24 | 2018-09-28 | 睿力集成电路有限公司 | The grinding method of semiconductor integrated circuit structure |
| CN110614579A (en) * | 2013-02-04 | 2019-12-27 | 台湾积体电路制造股份有限公司 | High throughput CMP platform |
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| JPH11340174A (en) * | 1998-05-28 | 1999-12-10 | Nippon Steel Corp | Producing method for semiconductor device |
| CN1444264A (en) * | 2002-03-08 | 2003-09-24 | 矽统科技股份有限公司 | Microshallow insulating groove structure preparation method |
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2011
- 2011-05-16 CN CN201110125319.3A patent/CN102789974B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11340174A (en) * | 1998-05-28 | 1999-12-10 | Nippon Steel Corp | Producing method for semiconductor device |
| CN1444264A (en) * | 2002-03-08 | 2003-09-24 | 矽统科技股份有限公司 | Microshallow insulating groove structure preparation method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110614579A (en) * | 2013-02-04 | 2019-12-27 | 台湾积体电路制造股份有限公司 | High throughput CMP platform |
| CN105097468A (en) * | 2014-05-21 | 2015-11-25 | 中国科学院微电子研究所 | Flattening process |
| CN105261550A (en) * | 2014-07-18 | 2016-01-20 | 中国科学院微电子研究所 | Chemical mechanical polishing method for germanium |
| CN105261550B (en) * | 2014-07-18 | 2018-04-03 | 中国科学院微电子研究所 | A kind of cmp method of germanium |
| CN108352357A (en) * | 2015-10-23 | 2018-07-31 | 应用材料公司 | For advanced CMP and the gap filling membrane modifying of groove stream |
| CN108352357B (en) * | 2015-10-23 | 2023-02-17 | 应用材料公司 | Gapfill film modification for advanced CMP and trench flow |
| CN108597995A (en) * | 2018-05-24 | 2018-09-28 | 睿力集成电路有限公司 | The grinding method of semiconductor integrated circuit structure |
| CN108597995B (en) * | 2018-05-24 | 2023-11-07 | 长鑫存储技术有限公司 | Polishing method for semiconductor integrated circuit structure |
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| CN102789974B (en) | 2015-10-21 |
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Inventor after: Yang Tao Inventor after: Liu Jinbiao Inventor after: Ye Tianchun Inventor after: Li Junfeng Inventor after: Zhao Chao Inventor before: Yang Tao Inventor before: Liu Jinbiao Inventor before: Li Junfeng Inventor before: Zhao Chao |
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Effective date of registration: 20191108 Address after: 221000 1f-2f, A2 plant, No.26 Chuangye Road, economic and Technological Development Zone, Xuzhou City, Jiangsu Province Patentee after: Jiangsu zhongkehanyun Semiconductor Co., Ltd Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |