CN102789974B - Method for Improving Chemical Mechanical Planarization Uniformity of Shallow Trench Isolation - Google Patents
Method for Improving Chemical Mechanical Planarization Uniformity of Shallow Trench Isolation Download PDFInfo
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- CN102789974B CN102789974B CN201110125319.3A CN201110125319A CN102789974B CN 102789974 B CN102789974 B CN 102789974B CN 201110125319 A CN201110125319 A CN 201110125319A CN 102789974 B CN102789974 B CN 102789974B
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- ion implantation
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- silicon oxide
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000002955 isolation Methods 0.000 title claims abstract description 23
- 239000000126 substance Substances 0.000 title claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 110
- 238000005468 ion implantation Methods 0.000 claims abstract description 31
- 238000005498 polishing Methods 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 46
- 238000002347 injection Methods 0.000 claims description 20
- 239000007924 injection Substances 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- -1 BF 2 Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 230000000994 depressogenic effect Effects 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 22
- 239000000463 material Substances 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 2
- 239000012530 fluid Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 25
- 230000000694 effects Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000002635 aromatic organic solvent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002068 genetic effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- Element Separation (AREA)
Abstract
The invention discloses a method for improving the chemical mechanical planarization uniformity of shallow trench isolation, which comprises the following steps: depositing a silicon oxide isolation layer in the shallow trench, wherein the silicon oxide isolation layer is provided with a convex part and a concave part; performing ion implantation to change the crystalline state of the protruding portion; and performing chemical mechanical polishing on the silicon oxide isolation layer until the stop layer is exposed. According to the method for improving the chemical mechanical planarization uniformity of the shallow trench isolation, ion implantation and a silicon oxide CMP process are combined, and the material removal rate of CMP grinding fluid to the silicon oxide on the protruding part is improved by performing ion implantation treatment on the silicon oxide on the protruding part. In the STI CMP process, the purpose of reducing the thickness difference of the oxide layers above the shallow trench isolation region and the non-isolation region is achieved, so that the planarization uniformity of the STICMP process is improved, namely, the degree of generating the dent defect is reduced.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor device, particularly relate to and a kind ofly improve the method for shallow trench isolation from chemical-mechanical planarization uniformity.
Background technology
Since from 0.25um technology node introducing shallow trench isolation from (STI) technology, device high density is isolated becomes possibility.Constantly reduce with technology node, for improving device density and isolation effect, the depth ratio (aspect ratio is called for short AR) of shallow trench itself constantly increases thereupon.High density plasma CVD (HDP-CVD) is the mainstream technology of filling shallow trench.This technology is by the circulation technology of deposit limit, limit etching, and overcome the sealing difficult problem that groove top may exist, complete the filling to large AR groove structure, silica-filled rear effect is shown in accompanying drawing 1.Wherein silicon substrate 1 is formed with successively pad oxide and silicon nitride layer 2, adopt HDP-CVD these STI silica-filled after etching is formed with the larger STI of multiple AR, the silica of deposition and the silicon dioxide of pad oxide couple together, and form silicon oxide layer 3.
With the continuous increase of shallow trench depth ratio (aspect ratio), after HDP-CVD, the silicon oxide thickness drop of top, Nei Yufei shallow channel isolation area, shallow channel isolation area (active region) becomes increasing, and this is that next step shallow trench isolation proposes very large challenge from the control of chemical-mechanical planarization (STI CMP) technique to chip wafer inner homogeneous.Owing to there is large silicon oxide thickness drop, (difference in height at the top of silicon oxide layer 3 in Fig. 1 is such as
), in STI CMP, this thickness drop cannot directly be eliminated by CMP, and CMP can be genetic to always terminate, cause part silica in shallow trench to grind off, form depression (dishing) defect, cause device electric property to decline, the even reduction of yield, is shown in accompanying drawing 2.
Generally speaking, when current HDP-CVD fills the STI of high AR, larger silicon oxide thickness official post obtains CMP uniformity and reduces, and causes device defects.
Summary of the invention
Therefore, the object of the invention is to improve STI CMP uniformity to improve the reliability of device.
The invention provides and a kind ofly improve the method for shallow trench isolation from chemical-mechanical planarization uniformity, comprising: deposit forms silica separator in shallow trench, and described silica separator has projection and sunk part; Perform ion implantation, change the crystalline state of described projection; Chemico-mechanical polishing is performed, until expose stop-layer to described silica separator.
Wherein, the step of described ion implantation comprises, and described silica separator applies photoresist, exposes described projection after exposure imaging, retains the photoresist of described depressed part office, with the photoresist retained for mask carries out vertical ion injection.Wherein, the mask plate that described exposure imaging uses is complementary with the mask plate forming described shallow trench, and vertical ion removes described photoresist after injecting.
Wherein, the step of described ion implantation comprises, and determines to inject inclination angle theta according to the height H of described projection and the width L of described shallow trench, performs angle-tilt ion inject with described inclination angle theta to described projection.Wherein, after the described angle-tilt ion of execution is injected, also comprise and injecting the second time angle-tilt ion of described projection, described second time angle-tilt ion is injected and is injected symmetry with described angle-tilt ion.Wherein, realize angle-tilt ion by rotating wafer or rotation injection source to inject and/or the injection of second time angle-tilt ion.
Wherein, the kind of described ion implantation comprises H, C, N, B, BF
2, In, P, As, Sb and combination thereof.Wherein, the dosage of described ion implantation is 1 × 10
14to 5 × 10
15/ cm
2, Implantation Energy is 10KeV to 150KeV.Wherein, described chemico-mechanical polishing uses SiO2 base lapping liquid or CeO2 base lapping liquid.Wherein, described chemico-mechanical polishing uses hard polishing pad or soft polishing pad.
According to the method for raising shallow trench isolation of the present invention from chemical-mechanical planarization uniformity, have employed ion implantation and silica CMP compound use, by carrying out ion implantation process to projection silica, improve the material removal rate of CMP lapping liquid to projection silica.In STI CMP process, reach the object of the thickness drop reducing shallow channel isolation area and non-isolated district upper oxide floor, thus improve the planarization uniformity of STI CMP, namely reduce the degree producing depression defect.
Object of the present invention, and in these other unlisted objects, met in the scope of the application's independent claims.Embodiments of the invention limit in the independent claim, and specific features limits in dependent claims thereto.
Accompanying drawing explanation
Technical scheme of the present invention is described in detail referring to accompanying drawing, wherein:
The HDP-CVD that Fig. 1 shows prior art fills the generalized section of the STI of high AR;
Fig. 2 shows the generalized section of the STI CMP of prior art;
Fig. 3 to Fig. 5 vertical ion shown according to one embodiment of the invention injects the generalized section of each step;
Fig. 6 and Fig. 7 angle-tilt ion shown according to another embodiment of the present invention injects the generalized section of each step; And
Fig. 8 and Fig. 9 shows the generalized section according to each step of CMP after ion implantation of the present invention.
Embodiment
Describe feature and the technique effect thereof of technical solution of the present invention in detail in conjunction with schematic embodiment referring to accompanying drawing, disclose the method improving STI CMP uniformity.It is pointed out that structure like similar Reference numeral representation class, term " first " used in the application, " second ", " on ", D score etc. can be used for modifying various device architecture or processing step.These modify the space of not hint institute's modification device architecture or processing step unless stated otherwise, order or hierarchical relationship.
Applicant finds through lot of experiments and data analysis thereof, silica is after ion implantation, its chemical bond and crystalline state are destroyed, and therefore greatly can strengthen the chemical corrosion effect of lapping liquid to ion implantation process silica, thus improve its material removal rate.Therefore main thought of the present invention is by carrying out ion implantation process to projection silica, improves the material removal rate of CMP lapping liquid to projection silica.In STI CMP process, reach the object of the thickness drop reducing shallow channel isolation area and non-isolated district upper oxide floor, thus improve the planarization uniformity of STI CMP, namely reduce the degree producing depression defect.
embodiment 1
Fig. 3 to Fig. 5 vertical ion shown according to the embodiment of the present invention 1 injects the generalized section of each step to improve silica oxide removal rate.
First with reference to Fig. 3, form pad silicon oxide layer and silicon nitride layer 2 on substrate 1, photoetching/etching forms the STI of high AR, and then adopt HDP-CVD with the STI of silica-filled high AR, the silicon dioxide of filling engages with pad oxide and forms silica separator 3.After silica separator 3 deposit is complete, to full wafer wafer coating photoresist; With shallow trench isolation from reverse light shield (namely with form STI exposure mask plate used complementary), through overexposure, development, comes out the silica of non-shallow trench area projection, and retain the photoresist 4 being positioned at depressed part office, as shown in meshing in Fig. 3.
Secondly, with reference to Fig. 4, according to the height of silica 3 projection, select suitable ion implanting conditions, vertical ion is carried out to projection and injects process, as shown in Fig. 4 arrow.The ion implantation degree of depth is equal to or less than silica drop thickness.Particularly, for silicon oxide thickness drop of the present invention be
time, the ionic species of injection includes but not limited to H, C, N, B, BF
2, at least one in In, P, As or Sb and combination thereof, the dosage of injection is 1 × 10
14to 5 × 10
15/ cm
2, Implantation Energy is 10KeV to 150KeV.After carrying out vertical ion injection, the region that silicon oxide layer 3 top is outstanding, also namely non-sti region injects ion atmosphere because be exposed to, its chemical bond and crystalline state are destroyed, therefore greatly can strengthen the chemical corrosion effect of lapping liquid to ion implantation process silica, thus improve its material removal rate.
Again, with reference to Fig. 5, after vertical ion injects, get rid of photoresist by wet etching or dry method and wet etching, and by drying wafer.Wet method is removed photoresist and can be used acetone and aromatic organic solvent, also can use sulfuric acid and hydrogen peroxide.Dry method is removed photoresist and oxygen containing plasma reaction can be adopted to etch removal photoresist, organic photoresist is oxidized to gas and is taken away by vacuum system.In the silicon oxide layer 3 protruded in Fig. 5, some line part represents the chemical bond and crystalline state destruction that occur because of ion implantation.
After ion implantation changes silicon oxide layer crystalline state, continue to adopt CMP with planarization silicon oxide layer, see accompanying drawing 8 and 9.Wafer after ion implantation process is carried out silica CMP process, see Fig. 8, adopt the polishing pad planarization silicon oxide layer 3 under lapping liquid effect rotated, until expose the silicon nitride layer 2 as CMP stop-layer.CMP can adopt hard polishing pad or soft polishing pad, and the Rodel IC1000 of such as 0.08 inch superposes with the SUBA IV liner of 0.05 inch, and lap speed is about 25 ~ 90r/min, and pressure is at 3 ~ 8psi.The lapping liquid of CMP can be SiO
2base lapping liquid also can be CeO
2base lapping liquid, lapping liquid flow is about 50 ~ 125mL/min, wherein can add KOH with softening silica.Because the silica of projection is after ion implantation, its chemical bond and crystalline state are destroyed, therefore lapping liquid can be strengthened to the chemical corrosion effect of protruding silica, improve in CMP process and remove speed to what protrude silica, thus in process of lapping, thickness drop can not be entailed the silica in shallow trench, reduce the depression of shallow trench internal oxidition silicon, see Fig. 9, the known STI evenness finally obtained is better than the result that traditional C MP method as shown in Figure 2 obtains.
embodiment 2
Fig. 6 to Fig. 7 angle-tilt ion shown according to the embodiment of the present invention 2 injects the generalized section of each step to improve silica oxide removal rate.
With reference to Fig. 6, after silica separator 3 deposit is complete, first according to height H and the spacing L of figure, determine the inclination angle injected.During for ensureing ion implantation, recess silica is not injected into, and needs to determine to inject inclination angle theta, and its expression formula is θ ≈ arctan (H/L), also namely inject inclination angle theta and approximate arctan (H/L), wherein H and L can be obtained by layout design and the means of measurement.Particularly, in the present invention, H is silicon oxide layer thickness drop, for
l is the width of shallow trench STI, such as
after determining to inject inclination angle, perform angle-tilt ion and inject, the ionic species of injection includes but not limited to H, C, N, B, BF
2, at least one in In, P, As or Sb and combination thereof, the dosage of injection is 1 × 10
14to 5 × 10
15/ cm
2, Implantation Energy is 10KeV to 150KeV.The ion injected is due to the choose reasonable at inclination angle, its overwhelming majority is made all to be distributed in non-sti region, also the region that namely silicon oxide layer 3 top is outstanding, its chemical bond and crystalline state are destroyed, therefore greatly can strengthen the chemical corrosion effect of lapping liquid to ion implantation process silica, thus improve its material removal rate.
If projection silicon oxide thickness is thicker, for ensureing to inject the silica of projection as far as possible comprehensively; From symmetry direction, use identical inclination angle and injection condition to reinject once, see Fig. 7, its mid point line part represents crystalline state and is changed.This step injection can be confirmed whether needs according to actual silicon oxide thickness; If first time injects can ensure that projection all can be injected into ion and reach, the symmetrical injection of this step can not be taked; Get to completely if first time injection can not make projection be injected into ion, need to take the symmetrical injection of this step, the inclination angle theta of symmetrical injection as hereinbefore.Realize first time angle-tilt ion injection and/or the injection of second time angle-tilt ion by rotating wafer or rotation injection source, to guarantee that projection is implanted uniformly ion, can change to make the crystalline state of projection.
Subsequently, with reference to Fig. 8 and Fig. 9, similar to Example 1ly, after ion implantation changes silica crystalline state, CMP is continued with planarization STI.
According to the method for raising shallow trench isolation of the present invention from chemical-mechanical planarization uniformity, have employed ion implantation and silica CMP compound use, by carrying out ion implantation process to projection silica, improve the material removal rate of CMP lapping liquid to projection silica.In STI CMP process, reach the object of the thickness drop reducing shallow channel isolation area and non-isolated district upper oxide floor, thus improve the planarization uniformity of STI CMP, namely reduce the degree producing depression defect.
Although the present invention is described with reference to one or more exemplary embodiment, those skilled in the art can know without the need to departing from the scope of the invention and make various suitable change and equivalents to technological process.In addition, can be made by disclosed instruction and manyly may be suitable for the amendment of particular condition or material and not depart from the scope of the invention.Therefore, object of the present invention does not lie in and is limited to as realizing preferred forms of the present invention and disclosed specific embodiment, and disclosed device architecture and manufacture method thereof will comprise all embodiments fallen in the scope of the invention.
Claims (10)
1. improve the method for shallow trench isolation from chemical-mechanical planarization uniformity, comprising:
In shallow trench, deposit forms silica separator, and described silica separator has projection and sunk part;
Perform ion implantation, the ion implantation degree of depth is equal to or less than silica drop thickness, changes the crystalline state of described projection, and its chemical bond and crystalline state are destroyed;
Chemico-mechanical polishing is performed, until expose stop-layer to described silica separator.
2. the method for claim 1, wherein the step of described ion implantation comprises, described silica separator applies photoresist, expose described projection after exposure imaging, retain the photoresist of described depressed part office, with the photoresist retained for mask carries out vertical ion injection.
3. method as claimed in claim 2, wherein, the mask plate that described exposure imaging uses is complementary with the mask plate forming described shallow trench, and vertical ion removes described photoresist after injecting.
4. the method for claim 1, wherein the step of described ion implantation comprises, and determines to inject inclination angle theta according to the height H of described projection and the width L of described shallow trench, performs angle-tilt ion inject with described inclination angle theta to described projection.
5. method as claimed in claim 4, wherein, after the described angle-tilt ion of execution is injected, also comprise and injecting the second time angle-tilt ion of described projection, described second time angle-tilt ion is injected and is injected symmetry with described angle-tilt ion.
6. method as claimed in claim 5, wherein, realizes described angle-tilt ion by rotating wafer or rotation injection source and injects and/or the injection of described second time angle-tilt ion.
7. the method for claim 1, wherein the kind of described ion implantation comprises H, C, N, B, BF
2, In, P, As, Sb and combination thereof.
8. the method for claim 1, wherein the dosage of described ion implantation is 1 × 10
14/ cm
2to 5 × 10
15/ cm
2, Implantation Energy is 10KeV to 150KeV.
9. the method for claim 1, wherein described chemico-mechanical polishing uses SiO
2base lapping liquid or CeO
2base lapping liquid.
10. the method for claim 1, wherein described chemico-mechanical polishing uses hard polishing pad or soft polishing pad.
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| US10513006B2 (en) * | 2013-02-04 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | High throughput CMP platform |
| CN105097468A (en) * | 2014-05-21 | 2015-11-25 | 中国科学院微电子研究所 | Planarization process method |
| CN105261550B (en) * | 2014-07-18 | 2018-04-03 | 中国科学院微电子研究所 | Chemical mechanical polishing method for germanium |
| JP6955489B2 (en) * | 2015-10-23 | 2021-10-27 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Modification of interstitial filling membrane for advanced CMP and recess flow |
| CN108597995B (en) * | 2018-05-24 | 2023-11-07 | 长鑫存储技术有限公司 | Polishing method for semiconductor integrated circuit structure |
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| CN1444264A (en) * | 2002-03-08 | 2003-09-24 | 矽统科技股份有限公司 | Microshallow insulating groove structure preparation method |
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