CN105261550B - A kind of cmp method of germanium - Google Patents
A kind of cmp method of germanium Download PDFInfo
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- CN105261550B CN105261550B CN201410345960.1A CN201410345960A CN105261550B CN 105261550 B CN105261550 B CN 105261550B CN 201410345960 A CN201410345960 A CN 201410345960A CN 105261550 B CN105261550 B CN 105261550B
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Abstract
The invention provides a kind of cmp method of germanium, this method comprises the following steps：A. polished wafer is provided, the wafer has the germanium groove that growth is completed, and is measurement isolated area between germanium groove；B. the minimum pattern density ρ that germanium groove flushes with measuring isolated area is confirmed；C. photoresist is coated on germanium groove of the pattern density less than or equal to ρ on wafer；D. ion implanting processing is carried out to the region not being covered by photoresist；E. photoresist is removed；F. the wafer is chemically-mechanicapolish polished.For the present invention after epitaxial growth monocrystalline Ge grooves are completed, the selective raised Ge raceway grooves to high density graph area carry out ion implanting, then carry out Ge CMP again, remove the material removal rate of projection during raising CMP to high density.Can so avoid because pattern density is different and caused by Ge material removal rates difference, so as to improve the local homogeneity after Ge raceway grooves CMP.
Description
Technical field
The present invention relates to IC manufacturing process, and especially, the chemical machinery for being related to a kind of germanium throws method.
Technical background
With integrated circuit and the high speed development of optics, another important semi-conducting material germanium (Ge) is got over
Carry out more important application.In the following technology bands of integrated circuit 14nm, linked up using Ge and replace Si raceway grooves, more preferable device will be obtained
Performance, the technique is integrated to have turned into the important R＆D direction for maintaining Moore's Law in below 14nm technology nodes.Meanwhile in optics
In device, relative to traditional material Si, Ge materials have more preferably excellent optical characteristics.At present, Ge has application to high-end light
In the optics such as waveguide and optical modulator.No matter for Application of integrated circuit Ge raceway grooves, or in optical waveguide applications
Ge fiber waveguides, in technique implementation process, to obtain respective physical structure, its technique implementation process is similar.Fig. 1 gives
Typically Ge raceway grooves technique realizes schematic diagram in ic manufacturing process, and the structure for making Ge fiber waveguides is similar therewith.It is first
After being first previously formed silica isolation, the groove of silicon is obtained by selective corrosion.Then grown by the method for low pressure extension
Monocrystalline Ge materials, then the method by chemically-mechanicapolish polishing (CMP), the Ge of protrusion is polished, obtains having isolation structure
Monocrystalline Ge raceway grooves.Similar Ge channel production methods are also employed in the Ge fiber waveguide techniques in optical communication, simply channel dimensions
It is required that different from the application standard in integrated circuit.
It is similar with typical CMP process, how to ensure uniformity (the within die non-inside chip wafer
Uniformity, WIDNU) it is one of difficult point faced in Ge CMPs.CMP WIDNU control and pattern density breath manner of breathing
Close.At present, it has been found that after the cmp process, Ge convex-concaves degree in groove simultaneously differs different Ge groove densities figures.Such as Fig. 1
Shown, if Ge raceway groove pattern densities are larger, raised Ge figures local compression is relatively low, corresponding topical Ge material removal rates compared with
Low, certain projection (protrude) is presented in Ge raceway grooves after causing CMP；If Ge raceway groove pattern densities are smaller, raised Ge figures
Local compression is higher, and corresponding topical Ge material removal rates are higher, and certain depression is presented in Ge raceway grooves after causing CMP
(dishing)；This local rough and uneven in surface, the application for integrated circuit or optics is all very unfavorable
's.
The content of the invention
The invention provides a kind of chemical machinery of germanium to throw method, after epitaxial growth monocrystalline Ge grooves are completed, to highly dense
The raised Ge raceway grooves for spending graph area carry out ion implanting, Ge CMP are then carried out again, so as to improve the part after Ge raceway grooves CMP
Uniformity.Specifically, this method comprises the following steps：
A. polished wafer is provided, the wafer has the germanium groove that growth is completed, and is measurement isolated area between germanium groove；
B. the minimum pattern density ρ that germanium groove flushes with measuring isolated area is confirmed；
C. the germanium groove that the pattern density on wafer is less than ρ is covered, and exposure pattern density is more than or equal to ρ germanium ditch
Groove；
D. ion implanting processing is carried out to exposed region；
E. the masking to wafer is removed；
F. the wafer is chemically-mechanicapolish polished.
Wherein, in the step b, confirm that minimum pattern density ρ method is analyzed for physics sliver.
Wherein, the step c includes：
C1. reticle is prepared, the reticle can realize the photoetching to region of the pattern density more than or equal to ρ；
C2. photoresist is coated on the wafer, and is developed using the reticle formed in c1, is removed big on wafer
Photoresist on minimum pattern density region.
Wherein, in the step d, ion implanting depth is equal to or less than thickness of the germanium groove higher than measurement isolated area.
Wherein, in the step d, the ionic species that the ion implanting processing uses includes C, H, B, BF2,In,P,
Any one of As, Sb, Ge, Si, F or its combination.
Wherein, in the step d, the energy of the ion implanting processing is 1KeV~1000KeV.
Wherein, in the step d, the implantation dosage of the ion implanting processing is 1 × 1010~1×1016cm-2。
Wherein, in the step f, used polishing fluid is acid or alkaline SiO2Base polishing fluid and acidity or alkali
Property Al2O3Base polishing fluid etc..
Wherein, in the step f, used polishing pad is hard polishing pad, soft polishing pad etc..
After epitaxial growth monocrystalline Ge grooves are completed, the selective raised Ge raceway grooves to high density graph area enter the present invention
Row ion implanting, Ge CMP is then carried out again.After ion implanted, projection monocrystalline Ge monocrystalline state is destroyed, and is turned into
Non crystalline structure, therefore chemical attack of the CMP planarization liquid to projection Ge can be strengthened and acted on, to high density during raising CMP
Remove the material removal rate of projection.Can so avoid because pattern density is different and caused by Ge material removal rates difference
It is different, so as to improve the local homogeneity after Ge raceway grooves CMP.
Brief description of the drawings
By reading the detailed description made to non-limiting example made with reference to the following drawings, of the invention is other
Feature, objects and advantages will become more apparent upon：
Fig. 1 is a kind of schematic diagram of the cmp method of germanium in the prior art；
Fig. 2 is the schematic diagram according to the cmp method of germanium in the specific embodiment of the present invention.
Same or analogous reference represents same or analogous part in accompanying drawing.
Embodiment
The invention provides a kind of cmp method of germanium, after epitaxial growth monocrystalline Ge grooves are completed, to height
The raised Ge raceway grooves of density graph area carry out ion implanting, Ge CMP are then carried out again, so as to improve the office after Ge raceway grooves CMP
Portion's uniformity.
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with implementation of the accompanying drawing to the present invention
Example is described in detail.
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, is only used for explaining the present invention, and is not construed as limiting the claims.In addition, this
The example of the various specific techniques provided and material is invented, but those of ordinary skill in the art can be appreciated that other works
The applicable property of skill and/or the use of other materials.It should be noted that part illustrated in the accompanying drawings is painted not necessarily to scale
System.Present invention omits the description to known assemblies and treatment technology and process to avoid being unnecessarily limiting the present invention.
Fig. 2 shows the schematic flow sheet chemically-mechanicapolish polished described in one embodiment of the present of invention, specifically, the party
Method comprises the following steps：
First, there is provided polished wafer, the wafer have the germanium groove that growth is completed, and are measurement isolation between germanium groove
Area.The wafer is the substrate for growing germanium material, and its material can be any semi-conducting material, such as silicon, III-V material, such as
GaAs etc., it is preferred that in view of the matching degree and the compatibility of existing process between material, silicon conduct is used in the present embodiment
Substrate wafer material.The material of the measurement isolated area is dielectric layer, such as silica, silicon nitride, or other materials
The insulating medium layer of material, it is in the present embodiment, preferable using material of the silica as measurement isolated area.It is described measurement every
Formed from area when growing germanium groove, it is selectively raw in the region that germanium material limited on wafer its object is to make
It is long.Its forming method is：First, wafer is grown to the regional graphics of germanium as required, the selective oxygen on silicon substrate
Change, the measurement separation layer formed in subsequent step, the conventional skill that the graphical and oxidizing process in this step belongs in this area
Art, no longer it is specifically described herein；Next, using the method for selective corrosion, remove in region not oxidized on wafer
Substrate silicon materials, room groove is formed, specifically, the method that can use anisotropic selective corrosion, removes measurement isolation
Silicon between layer, specific corrosive liquid can use the inorganic solutions such as hydrofluoric acid；Next, grow germanium in the room groove
Material, growing method can be low pressure epitaxial growths.Due to employed in above step being all routine techniques in this area
Means, it will not be repeated here.
Next, in order that the germanium material of growth has consistent thickness, it is necessary to by chemical-mechanical planarization (CMP)
Method, the Ge of protrusion is polished, obtain the monocrystalline Ge raceway grooves with isolation structure (measuring separation layer).Similar Ge raceway groove systems
In the Ge fiber waveguide techniques being also employed in as method in optical communication, simply channel dimensions requirement is different from the application in integrated circuit
Standard.
However, as it was previously stated, different Ge groove densities figures after the cmp process, Ge convex-concaves degree in groove not phase
Together, certain depression (dishing) is presented in Ge raceway grooves after causing CMP；It is this local rough and uneven in surface, no matter for integrated circuit
Or the application of optics is all very unfavorable.For this problem, disclosed in the present invention a kind of ion implanting with often
Advise the new method of Ge CMP connected applications.
Specifically, before CMP is carried out, the minimum pattern density ρ that germanium groove flushes with measuring isolated area is first confirmd that, this
One step can be completed by means such as physics sliver analyses, confirm that the minimum figure of groove Ge and measurement isolated area keep level is close
Degree, in the present embodiment, the minimum density are 7%；Next, preparing reticle, the reticle can be realized big to pattern density
Photoetching in the region equal to ρ；Photoresist is coated on the wafer, and is developed using the reticle prepared, is removed brilliant
The photoresist being more than on circle on minimum pattern density region, the projection of the Ge the top of the groove of high density area is exposed；
Next, selecting suitable ion implanting conditions, ion implanting processing, ion are carried out to the monocrystalline Ge of high density area projection
Inject depth and be equal to or less than Ge grooves protrusion thickness.
The wafer injected ions into after processing carries out Ge CMP processing, because the monocrystalline Ge materials of projection are noted through ion
After entering, its monocrystalline key and state are destroyed, therefore can be strengthened chemical attack of the polishing fluid to high-density region projection Ge and be made
With to the material removal rate of projection during raising CMP.This avoid because pattern density is different and caused by Ge materials
The difference of speed is removed, so as to improve the local homogeneity after Ge raceway grooves CMP, i.e. WIDNU (heterogeneity between piece) is final to improve
The uniformity of device performance.
For the property of the germanium material between not damage measurement separation layer, i.e., unnecessary impurity is not introduced in this region,
Ion implanting depth is equal to or less than thickness of the germanium groove higher than measurement isolated area；In order to achieve this it is needed ion is noted
The impurity entered and corresponding technological parameter carry out specification, specifically, the ionic species that ion implanting processing uses includes C,
H,B,BF2, In, P, As, Sb, Ge, Si, F etc., the energy of the ion implanting processing is 1KeV~1000KeV, and implantation dosage is
1×1010~1×1016cm-2。
Next, get rid of photoresist；Finally, the wafer is chemically-mechanicapolish polished.Wherein, used polishing
Liquid is acid or alkaline SiO2Base polishing fluid and acidity or alkaline Al2O3Base polishing fluid etc., used polishing pad are hard polishing
Pad, soft polishing pad etc..
It is selective to high density after epitaxial growth monocrystalline Ge grooves are completed using technical scheme provided by the invention
The raised Ge raceway grooves of graph area carry out ion implanting, then carry out Ge CMP again.After ion implanted, projection monocrystalline Ge
Monocrystalline state be destroyed, turn into non crystalline structure, thus can strengthen CMP planarization liquid to projection Ge chemical attack effect,
The material removal rate of projection is removed during raising CMP to high density.It can so avoid making because pattern density is different
Into the difference of Ge material removal rates, so as to improve the local homogeneity after Ge raceway grooves CMP.
Although be described in detail on example embodiment and its advantage, it should be understood that do not depart from the present invention spirit and
In the case of protection domain defined in the appended claims, various change, substitutions and modifications can be carried out to these embodiments.It is right
In other examples, one of ordinary skill in the art should be readily appreciated that while keeping in the scope of the present invention, technique
The order of step can change.
In addition, the application of the present invention is not limited to technique, mechanism, the system of the specific embodiment described in specification
Make, material composition, means, method and step., will be easy as one of ordinary skill in the art from the disclosure
Ground understands, for current technique that is existing or will developing later, mechanism, manufacture, material composition, means, method or
Step, the knot that wherein they perform the function being substantially the same with the corresponding embodiment of the invention described or acquisition is substantially the same
Fruit, they can be applied according to the present invention.Therefore, appended claims of the present invention are intended to these techniques, mechanism, system
Make, material composition, means, method or step are included in its protection domain.
Claims (9)
1. a kind of cmp method of germanium, this method comprise the following steps：
A. polished wafer is provided, the wafer has the germanium groove that growth is completed, and is measurement isolated area between germanium groove；
B. the minimum pattern density ρ that germanium groove flushes with measuring isolated area is confirmed；
C. the germanium groove that the pattern density on wafer is less than ρ is covered, and exposure pattern density is more than or equal to ρ germanium groove；
D. ion implanting processing is carried out to exposed region；
E. the masking to wafer is removed；
F. the wafer is chemically-mechanicapolish polished.
2. according to the method for claim 1, it is characterised in that in the step b, confirm minimum pattern density ρ side
Method is analyzed for physics sliver.
3. according to the method for claim 1, it is characterised in that the step c includes：
C1. reticle is prepared, the reticle can realize the photoetching to region of the pattern density more than or equal to ρ；
C2. photoresist is coated on the wafer, and is developed using the reticle formed in c1, removes and is more than most on wafer
Photoresist on low pattern density region.
4. according to the method for claim 1, it is characterised in that in the step d, ion implanting depth is equal to or less than
Thickness of the germanium groove higher than measurement isolated area.
5. according to the method for claim 1, it is characterised in that in the step d, what the ion implanting processing used
Ionic species includes C, H, B, BF2, In, P, As, Sb, Ge, Si, one kind or its combination in F.
6. according to the method for claim 1, it is characterised in that in the step d, the energy of the ion implanting processing
For 1KeV~1000KeV.
7. according to the method for claim 1, it is characterised in that in the step d, the injection of the ion implanting processing
Dosage is 1 × 1010~1 × 1016cm-2。
8. according to the method for claim 1, it is characterised in that in the step f, used polishing fluid to be acid or
Alkaline SiO2Base polishing fluid and acidity or alkaline Al2O3Base polishing fluid.
9. according to the method for claim 1, it is characterised in that in the step f, used polishing pad is hard polishing
Pad, soft polishing pad.
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| CN113299550A (en) * | 2021-04-07 | 2021-08-24 | 中国科学院微电子研究所 | Semiconductor device forming method and germanium photoelectric detector manufacturing method |
| CN113658905A (en) * | 2021-08-19 | 2021-11-16 | 杨荣 | Method for selectively extending germanium in deep silicon groove |
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| CN102479695A (en) * | 2010-11-29 | 2012-05-30 | 中国科学院微电子研究所 | Method for raising chemical mechanical planarization technology uniformity of metal gate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2008016692A (en) * | 2006-07-07 | 2008-01-24 | Fujifilm Corp | Method of manufacturing semiconductor device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479695A (en) * | 2010-11-29 | 2012-05-30 | 中国科学院微电子研究所 | Method for raising chemical mechanical planarization technology uniformity of metal gate |
| CN102479701A (en) * | 2010-11-30 | 2012-05-30 | 中国科学院微电子研究所 | Chemical mechanical planarization method and manufacturing method of gate last |
| CN102543714A (en) * | 2010-12-27 | 2012-07-04 | 中国科学院微电子研究所 | Method for improving uniformity of chemical-mechanical planarization process at top of opened polycrystal gratings |
| CN102592988A (en) * | 2011-01-11 | 2012-07-18 | 中国科学院微电子研究所 | Method for improving uniformity of poly opening polish nitride chemical-mechanical planarization process |
| CN102789974A (en) * | 2011-05-16 | 2012-11-21 | 中国科学院微电子研究所 | Method for improving uniformity of shallow trench isolation chemical-mechanical planarization |
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