CN102782868B - 太阳能电池用透明导电性基板、其制造方法以及使用其的太阳能电池 - Google Patents

太阳能电池用透明导电性基板、其制造方法以及使用其的太阳能电池 Download PDF

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Publication number
CN102782868B
CN102782868B CN201180012596.1A CN201180012596A CN102782868B CN 102782868 B CN102782868 B CN 102782868B CN 201180012596 A CN201180012596 A CN 201180012596A CN 102782868 B CN102782868 B CN 102782868B
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China
Prior art keywords
transparent conductive
solar cell
master mold
resin layer
conductive substrate
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Expired - Fee Related
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CN201180012596.1A
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English (en)
Chinese (zh)
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CN102782868A (zh
Inventor
竹添秀男
具沅会
西村凉
关隆史
鸟山重隆
郑旬纹
福田真林
福岛麻登香
增山聪
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Tokyo Institute of Technology NUC
Eneos Corp
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Tokyo Institute of Technology NUC
JX Nippon Oil and Energy Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/103—Esters of polyhydric alcohols or polyhydric phenols of trialcohols, e.g. trimethylolpropane tri(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/104—Esters of polyhydric alcohols or polyhydric phenols of tetraalcohols, e.g. pentaerythritol tetra(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
CN201180012596.1A 2010-03-05 2011-03-04 太阳能电池用透明导电性基板、其制造方法以及使用其的太阳能电池 Expired - Fee Related CN102782868B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-049630 2010-03-05
JP2010049630A JP5649315B2 (ja) 2010-03-05 2010-03-05 太陽電池用透明導電性基板、その製造方法及びそれを用いた太陽電池
PCT/JP2011/055118 WO2011108722A1 (ja) 2010-03-05 2011-03-04 太陽電池用透明導電性基板、その製造方法及びそれを用いた太陽電池

Publications (2)

Publication Number Publication Date
CN102782868A CN102782868A (zh) 2012-11-14
CN102782868B true CN102782868B (zh) 2015-04-08

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CN201180012596.1A Expired - Fee Related CN102782868B (zh) 2010-03-05 2011-03-04 太阳能电池用透明导电性基板、其制造方法以及使用其的太阳能电池

Country Status (6)

Country Link
US (1) US20130186462A1 (https=)
EP (1) EP2544243A1 (https=)
JP (1) JP5649315B2 (https=)
KR (1) KR101726017B1 (https=)
CN (1) CN102782868B (https=)
WO (1) WO2011108722A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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JP6369896B2 (ja) * 2013-06-27 2018-08-08 王子ホールディングス株式会社 有機薄膜太陽電池および有機薄膜太陽電池の製造方法
WO2016021533A1 (ja) * 2014-08-04 2016-02-11 Ｊｘ日鉱日石エネルギー株式会社 凹凸パターンを有する部材の製造方法
CN104518037B (zh) * 2015-01-23 2016-06-15 电子科技大学 用于薄膜太阳能电池的多尺度陷光结构
KR101985802B1 (ko) * 2015-06-11 2019-06-04 주식회사 엘지화학 적층체
KR101736615B1 (ko) 2015-12-14 2017-05-29 한국산업기술대학교산학협력단 광전소자 및 이의 제조방법
WO2020000596A1 (zh) * 2018-06-27 2020-01-02 北京铂阳顶荣光伏科技有限公司 用于太阳能芯片组件的透光处理系统和透光处理方法

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JPH06221838A (ja) * 1993-01-27 1994-08-12 Fujitsu Ltd 表面粗さ評価方法
JP2001151834A (ja) * 1999-06-07 2001-06-05 Toshiba Corp パターン形成材料、多孔質構造体の製造方法、パターン形成方法、電気化学セル、中空糸フィルター、多孔質カーボン構造体の製造方法、キャパシタの製造方法、および燃料電池の触媒層の製造方法
JP2003298084A (ja) * 2002-03-29 2003-10-17 Tdk Corp 太陽電池およびその製造方法
JP2004124088A (ja) * 2002-09-11 2004-04-22 Rikogaku Shinkokai ブロック共重合体、及びミクロ相分離構造膜の製造方法
JP2005142358A (ja) * 2003-11-06 2005-06-02 Sharp Corp 太陽電池
JP2005216959A (ja) * 2004-01-27 2005-08-11 Mitsubishi Heavy Ind Ltd 太陽光発電装置、及び、太陽光発電方法
WO2009119174A1 (ja) * 2008-03-26 2009-10-01 日本合成化学工業株式会社 太陽電池用基板及び太陽電池

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JPH06221838A (ja) * 1993-01-27 1994-08-12 Fujitsu Ltd 表面粗さ評価方法
JP2001151834A (ja) * 1999-06-07 2001-06-05 Toshiba Corp パターン形成材料、多孔質構造体の製造方法、パターン形成方法、電気化学セル、中空糸フィルター、多孔質カーボン構造体の製造方法、キャパシタの製造方法、および燃料電池の触媒層の製造方法
JP2003298084A (ja) * 2002-03-29 2003-10-17 Tdk Corp 太陽電池およびその製造方法
JP2004124088A (ja) * 2002-09-11 2004-04-22 Rikogaku Shinkokai ブロック共重合体、及びミクロ相分離構造膜の製造方法
JP2005142358A (ja) * 2003-11-06 2005-06-02 Sharp Corp 太陽電池
JP2005216959A (ja) * 2004-01-27 2005-08-11 Mitsubishi Heavy Ind Ltd 太陽光発電装置、及び、太陽光発電方法
WO2009119174A1 (ja) * 2008-03-26 2009-10-01 日本合成化学工業株式会社 太陽電池用基板及び太陽電池

Also Published As

Publication number Publication date
KR20130050284A (ko) 2013-05-15
CN102782868A (zh) 2012-11-14
EP2544243A1 (en) 2013-01-09
WO2011108722A1 (ja) 2011-09-09
JP5649315B2 (ja) 2015-01-07
JP2011187573A (ja) 2011-09-22
US20130186462A1 (en) 2013-07-25
KR101726017B1 (ko) 2017-04-11

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