KR101726017B1 - 태양 전지용 투명 도전성 기판, 그의 제조 방법 및 이를 이용한 태양 전지 - Google Patents

태양 전지용 투명 도전성 기판, 그의 제조 방법 및 이를 이용한 태양 전지 Download PDF

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KR101726017B1
KR101726017B1 KR1020127025994A KR20127025994A KR101726017B1 KR 101726017 B1 KR101726017 B1 KR 101726017B1 KR 1020127025994 A KR1020127025994 A KR 1020127025994A KR 20127025994 A KR20127025994 A KR 20127025994A KR 101726017 B1 KR101726017 B1 KR 101726017B1
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transparent conductive
solar cell
cured resin
substrate
resin layer
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KR20130050284A (ko
Inventor
히데오 다케조에
원회 구
스즈시 니시무라
다카시 세키
시게타카 도리야마
순문 정
마키 후쿠다
마도카 후쿠시마
사토시 마스야마
Original Assignee
제이엑스 에네루기 가부시키가이샤
고쿠리츠다이가쿠호진 토쿄고교 다이가꾸
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/103—Esters of polyhydric alcohols or polyhydric phenols of trialcohols, e.g. trimethylolpropane tri(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/104—Esters of polyhydric alcohols or polyhydric phenols of tetraalcohols, e.g. pentaerythritol tetra(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
KR1020127025994A 2010-03-05 2011-03-04 태양 전지용 투명 도전성 기판, 그의 제조 방법 및 이를 이용한 태양 전지 Expired - Fee Related KR101726017B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010049630A JP5649315B2 (ja) 2010-03-05 2010-03-05 太陽電池用透明導電性基板、その製造方法及びそれを用いた太陽電池
JPJP-P-2010-049630 2010-03-05
PCT/JP2011/055118 WO2011108722A1 (ja) 2010-03-05 2011-03-04 太陽電池用透明導電性基板、その製造方法及びそれを用いた太陽電池

Publications (2)

Publication Number Publication Date
KR20130050284A KR20130050284A (ko) 2013-05-15
KR101726017B1 true KR101726017B1 (ko) 2017-04-11

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KR1020127025994A Expired - Fee Related KR101726017B1 (ko) 2010-03-05 2011-03-04 태양 전지용 투명 도전성 기판, 그의 제조 방법 및 이를 이용한 태양 전지

Country Status (6)

Country Link
US (1) US20130186462A1 (https=)
EP (1) EP2544243A1 (https=)
JP (1) JP5649315B2 (https=)
KR (1) KR101726017B1 (https=)
CN (1) CN102782868B (https=)
WO (1) WO2011108722A1 (https=)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
JP6369896B2 (ja) * 2013-06-27 2018-08-08 王子ホールディングス株式会社 有機薄膜太陽電池および有機薄膜太陽電池の製造方法
WO2016021533A1 (ja) * 2014-08-04 2016-02-11 Ｊｘ日鉱日石エネルギー株式会社 凹凸パターンを有する部材の製造方法
CN104518037B (zh) * 2015-01-23 2016-06-15 电子科技大学 用于薄膜太阳能电池的多尺度陷光结构
KR101985802B1 (ko) * 2015-06-11 2019-06-04 주식회사 엘지화학 적층체
KR101736615B1 (ko) 2015-12-14 2017-05-29 한국산업기술대학교산학협력단 광전소자 및 이의 제조방법
WO2020000596A1 (zh) * 2018-06-27 2020-01-02 北京铂阳顶荣光伏科技有限公司 用于太阳能芯片组件的透光处理系统和透光处理方法

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JP2008053273A (ja) 2006-08-22 2008-03-06 Toppan Printing Co Ltd 太陽電池およびその製造方法
JP2009231539A (ja) 2008-03-24 2009-10-08 Toshiba Corp 太陽電池及びそれに用いる金属電極層の製造方法
US20100175749A1 (en) 2008-03-24 2010-07-15 Tsutsumi Eishi Solar cell and method for manufacturing metal electrode layer to be used in the solar cell

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US5418635A (en) * 1992-02-19 1995-05-23 Sharp Kabushiki Kaisha Liquid crystal device with a reflective substrate with bumps of photosensitive resin which have 2 or more heights and random configuration
JPH06221838A (ja) * 1993-01-27 1994-08-12 Fujitsu Ltd 表面粗さ評価方法
JP3433988B2 (ja) * 1993-10-08 2003-08-04 オリンパス光学工業株式会社 焦点板作成用金型の製造方法
JP2504378B2 (ja) 1993-10-22 1996-06-05 株式会社日立製作所 太陽電池基板の製造方法
US6099786A (en) * 1996-02-23 2000-08-08 Prime View International Co. Method of making accurate dimension alignment film for LCD
JP3719632B2 (ja) 1998-12-17 2005-11-24 三菱電機株式会社 シリコン太陽電池の製造方法
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JP3940546B2 (ja) * 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
JP2003298084A (ja) * 2002-03-29 2003-10-17 Tdk Corp 太陽電池およびその製造方法
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JP2009231539A (ja) 2008-03-24 2009-10-08 Toshiba Corp 太陽電池及びそれに用いる金属電極層の製造方法
US20100175749A1 (en) 2008-03-24 2010-07-15 Tsutsumi Eishi Solar cell and method for manufacturing metal electrode layer to be used in the solar cell

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Publication number Publication date
KR20130050284A (ko) 2013-05-15
CN102782868A (zh) 2012-11-14
EP2544243A1 (en) 2013-01-09
WO2011108722A1 (ja) 2011-09-09
JP5649315B2 (ja) 2015-01-07
JP2011187573A (ja) 2011-09-22
US20130186462A1 (en) 2013-07-25
CN102782868B (zh) 2015-04-08

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St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000