CN102782763B - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN102782763B CN102782763B CN201080065188.8A CN201080065188A CN102782763B CN 102782763 B CN102782763 B CN 102782763B CN 201080065188 A CN201080065188 A CN 201080065188A CN 102782763 B CN102782763 B CN 102782763B
- Authority
- CN
- China
- Prior art keywords
- switch
- storage unit
- voltage
- output
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003860 storage Methods 0.000 title claims abstract description 225
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 230000014759 maintenance of location Effects 0.000 claims 4
- 101000854873 Homo sapiens V-type proton ATPase 116 kDa subunit a 4 Proteins 0.000 description 9
- 101000806601 Homo sapiens V-type proton ATPase catalytic subunit A Proteins 0.000 description 9
- 102100020737 V-type proton ATPase 116 kDa subunit a 4 Human genes 0.000 description 9
- 101000805729 Homo sapiens V-type proton ATPase 116 kDa subunit a 1 Proteins 0.000 description 6
- 102100037979 V-type proton ATPase 116 kDa subunit a 1 Human genes 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
Landscapes
- Read Only Memory (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010052722 | 2010-03-10 | ||
JP2010-052722 | 2010-03-10 | ||
PCT/JP2010/007402 WO2011111144A1 (ja) | 2010-03-10 | 2010-12-21 | メモリセルのドレイン電圧用及びゲート電圧用のレギュレータを共有したフラッシュメモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102782763A CN102782763A (zh) | 2012-11-14 |
CN102782763B true CN102782763B (zh) | 2015-11-25 |
Family
ID=44562992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080065188.8A Active CN102782763B (zh) | 2010-03-10 | 2010-12-21 | 半导体存储装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8593888B2 (zh) |
JP (1) | JP5661099B2 (zh) |
CN (1) | CN102782763B (zh) |
WO (1) | WO2011111144A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108700905B (zh) * | 2016-03-10 | 2020-08-04 | 松下半导体解决方案株式会社 | 调节器电路以及半导体存储装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6351414B1 (en) * | 1999-12-27 | 2002-02-26 | Hyundai Electronics Industries Co., Ltd. | Bias structure of a flash memory |
US6456557B1 (en) * | 2001-08-28 | 2002-09-24 | Tower Semiconductor Ltd | Voltage regulator for memory device |
CN101162611A (zh) * | 2006-10-12 | 2008-04-16 | 三星电子株式会社 | 电压生成电路、闪存器件、以及对闪存器件编程的方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0512891A (ja) * | 1990-09-17 | 1993-01-22 | Toshiba Corp | 半導体記憶装置 |
JP2008217914A (ja) * | 2007-03-06 | 2008-09-18 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2008269727A (ja) * | 2007-04-24 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 昇圧回路、半導体記憶装置およびその駆動方法 |
JP5361182B2 (ja) * | 2007-12-21 | 2013-12-04 | 株式会社東芝 | 半導体記憶装置 |
-
2010
- 2010-12-21 JP JP2012504170A patent/JP5661099B2/ja active Active
- 2010-12-21 WO PCT/JP2010/007402 patent/WO2011111144A1/ja active Application Filing
- 2010-12-21 CN CN201080065188.8A patent/CN102782763B/zh active Active
-
2012
- 2012-08-22 US US13/591,766 patent/US8593888B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6351414B1 (en) * | 1999-12-27 | 2002-02-26 | Hyundai Electronics Industries Co., Ltd. | Bias structure of a flash memory |
US6456557B1 (en) * | 2001-08-28 | 2002-09-24 | Tower Semiconductor Ltd | Voltage regulator for memory device |
CN101162611A (zh) * | 2006-10-12 | 2008-04-16 | 三星电子株式会社 | 电压生成电路、闪存器件、以及对闪存器件编程的方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2011111144A1 (ja) | 2013-06-27 |
WO2011111144A1 (ja) | 2011-09-15 |
US8593888B2 (en) | 2013-11-26 |
CN102782763A (zh) | 2012-11-14 |
JP5661099B2 (ja) | 2015-01-28 |
US20120314515A1 (en) | 2012-12-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200903 Address after: Kyoto Japan Patentee after: Panasonic semiconductor solutions Co.,Ltd. Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: Kyoto Japan Patentee after: Nuvoton Technology Corporation Japan Country or region after: Japan Address before: Kyoto Japan Patentee before: Panasonic semiconductor solutions Co.,Ltd. Country or region before: Japan |
|
CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240529 Address after: 825 Waterscreek Avenue, Unit 250, Block M, Allen, Texas 75013, United States Patentee after: Advanced Storage Technology Co.,Ltd. Country or region after: U.S.A. Address before: Kyoto Japan Patentee before: Nuvoton Technology Corporation Japan Country or region before: Japan |
|
TR01 | Transfer of patent right |