CN102738132A - 包括光学半导体器件的半导体封装体 - Google Patents
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- 230000003287 optical effect Effects 0.000 title claims abstract description 71
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- 239000000463 material Substances 0.000 claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 claims description 21
- 238000007789 sealing Methods 0.000 claims description 17
- 230000005855 radiation Effects 0.000 claims description 11
- 238000002955 isolation Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005192 partition Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 24
- 239000011521 glass Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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Abstract
本发明涉及包括光学半导体器件的半导体封装体。提供一种半导体封装体,包括:支撑板(2),由可以通过光辐射的材料制成,且至少在该支撑板的背面侧上具有至少一个细长孔(7)的开口;集成电路半导体器件(3),安装在所述支撑板的背面上,且具有从所述支撑板的背面侧转动的至少两个光学元件,这些光学元件设置在所述细长孔的任意一侧上;以及密封块(4),由不透明材料制成,密封所述支撑板上的半导体器件(3)并填充所述细长孔(7),在所述光学元件之间形成光学隔离划分部(7a),且在所述光学元件和所述支撑板之间留有腔体。
Description
技术领域
本发明涉及包括例如光学半导体器件的半导体封装体的领域。
背景技术
已知一种半导体封装体,其包括:安装板、提供有第一光学检测器的第一集成电路芯片、提供有次光学检测器的次集成电路芯片以及提供有光学发射器的第三集成电路芯片,这三个芯片被粘合到安装板上。不透明的盖被粘合到安装板的外围上并通过存在的三个分离的室使每个芯片光学隔离。所述盖具有三个分离的开口,所述三个开口面对上述三个光学元件而形成并被提供有三个透明的保护板。
这种已知的半导体封装体需要使用安装板和特定尺寸的盖的制造,涉及大量的安装步骤且在外部地电连接集成电路芯片时的困难,并且与集成电路芯片的尺寸相比具有较大的尺度。
发明内容
本发明的目的在于提出一种包括例如光学半导体器件的半导体封装体,其整体上更为简单且因而成本更低。
提出一种半导体封装体,包括:
支撑板,由可以通过光辐射的材料制成,且至少在支撑板的背面侧上具有至少一个细长孔的开口;集成电路半导体器件,安装在支撑板的背面上,且具有从支撑板的背面侧转动的至少两个光学元件,这些光学元件设置在细长孔的任意一侧上;以及
密封块,由不透明材料制成,密封支撑板上的半导体器件并填充细长孔,在光学元件之间形成光学隔离划分部,且在光学元件和支撑板之间留有腔体。
根据一个变型实施例,上述的孔可以在支撑板的厚度方向上通过支撑板。
根据另一个变型实施例,所述孔可以不通过支撑板,而在支撑板的正面侧上留有一层。
所述孔可以从支撑板的一个边缘延伸到相对边缘。
密封块至少可以部分地围绕支撑板。
在半导体器件侧上,支撑板可以提供有电连接迹线,所述电连接迹线在半导体器件之下延伸并链接到其凸块接触,并且在半导体器件之外延伸并链接到外部电连接装置。
外部电连接装置可以包括经过密封块的电连接过孔。
半导体器件可以包括至少一个主接收光学元件和至少一个发射光学元件,其位于支撑板的一侧上和在被填充有不透明材料的所述孔的任意一侧上。
主接收光学元件和发射光学元件可以形成在分离的芯片中。
不透明层可以形成在与半导体器件相对的支撑板的正面上,在该不透明层中具有面对主接收光学元件和发射光学元件的开口。
半导体器件可以包括设置在与所述发射光学元件相同的所述孔侧上的次接收光学元件。
不透明层可以在次接收光学元件前面延伸。
半导体器件可以包括至少一个主接收光学元件和至少一个次接收光学元件,其位于支撑板的一侧上和在被填充有不透明材料的所述孔的任意一侧上。
不透明层可以形成在与半导体器件相对的支撑板的正面上,在该不透明层中具有面对主接收光学元件和次接收光学元件的开口。
主接收光学元件和次接收光学元件可以形成在单个芯片中。
阻挡部可以在半导体器件和支撑板之间延伸,并分别在所述光学元件周围。
还提出了一种在内部包括半导体封装体的移动电话,所述电话的壳体具有面对所述光学元件中的至少一个而定位的至少一个开口。
附图说明
将通过附图来示出并通过非限制性例子的形式来描述根据本发明的半导体封装体,其中:
图1示出半导体封装体的一个变型实施例的横截面图;
图2示出用于图1的半导体封装体的装配有电连接迹线的支撑板的平面图;
图3示出装配有图1的半导体封装体的半导体器件的支撑板的平面图;
图4至图12在横截面中示出制作图1的半导体封装体的步骤;
图13示出图1的半导体封装体的变型实施例的横截面图;
图14示出半导体封装体的另一变型实施例的横截面图;以及
图15示出半导体封装体的另一变型实施例。
具体实施方式
可以采用长方体形式的半导体封装体1包括叠层,所述叠层从前往后包括由可以通过光辐射的材料例如玻璃制成的支撑板2和位于支撑板2的背面2a侧上的集成电路半导体器件3,并且半导体封装体1包括用于支撑板2上的半导体器件3的例如由环氧树脂制成的密封块4。
根据示出的例子,支撑板2包括第一矩形支撑板部分5和第二矩形支撑板部分6,第一矩形支撑板部分5和第二矩形支撑板部分6一个沿着另一个来布置,以便在它们相对的边缘之间定义孔7,它们的另一个边缘以一定距离来布置在封装体1中并且与封装体1的外围8平行。
根据示出的例子,半导体器件3包括第一集成电路芯片9,第一集成电路芯片9在孔7上方经过并具有位于支撑板部分5之上的部分9a和位于支撑板部分6之上的部分9b,并且半导体器件3包括位于支撑板部分6之上的第二集成电路芯片10,集成电路芯片9和10的边缘被布置成与支撑板部分5和6的边缘平行。
第一集成电路芯片9的部分9a在其正面包括第一光学元件11,第一光学元件11被定位成面对支撑板部分5、形成第一光辐射接收器。第一集成电路芯片9的该部分9b在其正面也包括第二光学元件12,第二光学元件12被定位成面对支撑板部分6、形成第二光辐射接收器。
第二集成电路芯片10在其正面包括光学元件13,光学元件13被定为成面向支撑板部分6、形成光辐射发射器。
在支撑板部分5的背面和第一集成电路芯片9的正面之间,形成围绕该芯片9的第一接收光学元件11的环形金属阻挡部14。以一个在另一个顶上的方式,金属阻挡部14包括在支撑板部分5的背面上的金属环形迹线15和在第一集成电路芯片9的正面上的金属环形迹线16。
在支撑板部分6的背面和第一集成电路芯片9的正面之间,形成围绕该芯片9的第二接收光学元件12的环形金属阻挡部17。以一个在另一个顶上的方式,金属阻挡部17包括在支撑板部分6的背面上的金属环形迹线18和在第一集成电路芯片9的正面上的金属环形迹线19。
在支撑板部分6的背面和集成电路芯片10的正面之间,形成围绕该芯片10的接收光学元件13的环形金属阻挡部20。以一个在另一个顶上的方式,金属阻挡部20包括在支撑板部分6的背面上的金属环形迹线21和在第一集成电路芯片10的正面上的金属环形迹线22,金属环形迹线21和金属环形迹线22链接到其集成电路。
在支撑板部分5和6的背面上,形成多个电连接金属迹线23,多个电连接金属迹线23在第一集成电路芯片9之下延伸,距阻挡部14和17的外围一定距离,并通过电连接凸块接触24电连接到该第一芯片,并在第一芯片9的边缘之外延伸。
在支撑板部分6的背面上,形成至少一个电连接金属迹线25,所述至少一个电连接金属迹线25在集成电路芯片10之下延伸且链接到环形阻挡部20,并在该芯片10的边缘之外延伸。
密封块4包围支撑板部分5和6的外围以及集成电路芯片9和10的外围,填充支撑板部分5和6与集成电路芯片9和10之间的空间以及环形阻挡部14、17、20的外围,填充支撑板部分5与集成电路芯片9的正面之间的孔7以便形成不透明的划分部7a,填充集成电路芯片9和10之间的空间并覆盖集成电路芯片10的背面。
由此,密封块4的外围构成了封装体1的外围8。支撑板部分5和6的正面以及密封块4的正面构成了正面26。集成电路芯片9的背面和密封块4的背面构成了背面27。
此外,在环形阻挡部14内部在集成电路芯片9的光学元件11之间留有腔体28,在环形阻挡部17内部在集成电路芯片9的光学元件12之间留有腔体29、并且在环形阻挡部20内部在集成电路芯片10的光学元件13之间留有腔体30。
在电连接迹线23和25背后,密封块4提供有通孔31和32,通孔31和32被金属填充以便形成连接过孔33和34。
在背面27上,还形成有链接到电连接过孔33的背面电连接迹线35,使得可以经由电连接迹线23、电连接凸块接触24、电连接过孔33和电连接迹线35来制成集成电路芯片9的背面外部电连接。
在背面27上,还形成有链接到电连接过孔34的背面电连接迹线36和背面电连接迹线37,背面电连接迹线37通过形成在密封块4中的背面孔39链接到集成电路芯片10的背面电连接凸块接触38,使得可以经由电连接迹线25、环形阻挡部20、电连接过孔34和电连接迹线36以及经由电连接迹线37和电连接凸块接触38来制成集成电路芯片10的背面外部电连接。
此外,通过由不透明材料制成的正面层40来覆盖正面26。该正面层具有形成为面向集成电路芯片9的接收光学元件11的开口41以及形成为面向集成电路芯片10的发射光学元件13的开口42。光学透镜43可以被安装在开口41中。光学透镜也可以与不透明层40的开口42相关联。
刚才描述的半导体封装体1提供了以下优点。
一方面,与接收光学元件11相关联的腔体28以及玻璃支撑板部分5,另一方面,与接收光学元件12和发射光学元件13相关联的空腔29和30以及玻璃支撑板部分6,借助于密封块4光学隔离,特别地借助于如下事实而光学隔离:该密封块4填充支撑板部分5和6之间的孔7并且延伸远至集成电路芯片9的正面。
由此,集成电路芯片9的接收光学元件11可以通过与光学透镜43相关联的不透明正面层40的开口41、支撑板部分5、腔体28来仅接收外部光辐射,而集成电路芯片10的发射光学元件13发出的光辐射不能够经由半导体封装体1内部的任何路径抵达它。
集成电路芯片10的发射光学元件13通过腔体30、玻璃支撑板部分6和不透明正面层40的开口42来发射光辐射。
集成电路芯片9的接收光学元件12主要从集成电路芯片10的发射光学元件13接收光辐射,其次通过支撑板部分6和腔体29经由不透明正面层40的开口42接收来自外部的光辐射,来自接收光学元件12的信号能够形成用于分析来自集成电路芯片9的接收光学元件11的信号的基准。
上述内容的结果在于半导体封装体1可以用作邻近检测器。
可以通过如下制造的相同半导体封装体的晶片级制造来获得半导体封装体1。
如图4所示,玻璃晶片100安装在平面支撑部101上,例如通过双面粘合剂来保持。该晶片具有如下的表面,使得以矩阵形式一个挨着另一个的多个位置102(图2)对应于要制造的多个半导体封装体1。
接着,如图5所示,在根据图2的图示的每个位置102上同时制作阻挡部14、17和20的金属环形迹线15、18和21以及金属迹线23和25。
接着,如图6所示,执行玻璃晶片100的刻蚀,使得在每个位置102上只保留支撑板部分5、6。可以通过化学刻蚀、激光射线、打磨或离子刻蚀来执行这一操作。
接着,如图7所示,通过在芯片9、10与相应的迹线之间插入金属环形迹线16、19、22以及金属凸块接触24,集成电路芯片9、10被置于适当位置。这一操作可以通过表面安装、然后将组件置于烘箱中来执行。
接着,如图8所示,例如通过压缩模制或转移模制来形成树脂层103,并且在进行硬化之后,对该层103进行背面平坦化以在每个位置102形成使正面26和背面27交叉链接的密封块4。
接着,如图9所示,在每个位置102,在集成电路芯片10的背面上在树脂103的层中制作孔开口39。
接着,如图10所示,在每个位置102,在迹线23、25的背面上在树脂103的层中制作孔31、32,这些孔被金属填充,以便形成电连接过孔33、34。
接着,如图11所示,在每个位置102,制作背面开口39,然后制作背面迹线35、37。
接着,如图12所示,在去除支撑部101之后,制作正面层104,以在每个位置102形成正面层40,并在每个位置102制作开口41、42。接着,将光学元件43安装在每个位置102。
接着,通过沿着位置102之间的公共边缘进行切割来将半导体封装体1单片化。
根据一个变型实施例,支撑板部分5、6可以由在以上结合图6描述的制造步骤中制作的采用槽形式的非穿通的孔7来分离。由此,支撑板部分5、6在正面将通过薄的剩余层链接。
根据另一个变型实施例,支撑板2可以延伸到封装体1的侧部8,并具有在之前结合图6描述的制造步骤中以交叉槽的形式制作的从一侧到另一侧穿通的或非穿通的孔7。
图13示出了支撑板2,支撑板2延伸到封装体1的侧部8,提供有从一侧到另一侧的非穿通的孔7,支撑板部分5和6在正面通过薄的剩余层44而链接。在这种情况下,可以例如通过涂料来至少覆盖产生的支撑板部分5和6的侧部,或者半导体封装体1可以被设置在具有面向开口41和42的开口的不透明包封体中。
根据图14所示的另一个变型实施例,半导体封装体50与上述的半导体封装体1的区别在于如下事实:其集成电路半导体器件3包括集成电路芯片51,其对应于集成电路芯片9的部分9a且只提供有接收光学元件11,而集成电路芯片10提供有发射光学元件13。因而,集成电路芯片51仅与阻挡部14相关联以及与迹线33和适当的电连接过孔33相关联。
因而,在支撑板2中的孔7可以在集成电路芯片10和集成电路芯片51之间的区域中延伸。
根据图15所示的另一个变型实施例,半导体封装体60与上述半导体器件1的区别在于以下事实:其集成电路半导体器件3只包括集成电路芯片9,而集成电路芯片10被去除。
在这种情况下,不透明的正面外部层40具有面向接收光学元件12定位的互补开口61。
在这种情况下,这对于处理支撑板部分5、6以便形成不同的滤光器可能是有利的。
一般来说,可以通过实施在微电子领域中所使用的常规手段来获得所述的各种制造步骤。
之前描述的半导体封装体,具体来说半导体封装体1,可以安装在移动电话的包封体或壳体内部,该包封体或壳体具有面对开口41、42的开口以便形成能够检测是否出现人体的一部分或对象的邻近检测器,从而在电话的电子电路中产生具体命令。
本发明不限于上述实施例。在不偏离所附权利要求限定的范围的情况下,许多变型实施例是可行的。
Claims (17)
1.一种半导体封装体,包括:
支撑板(2),由可以通过光辐射的材料制成,且至少在该支撑板的背面侧上具有至少一个细长孔(7)的开口,
集成电路半导体器件(3),安装在所述支撑板的背面上,且具有从所述支撑板的背面侧转动的至少两个光学元件,这些光学元件设置在所述细长孔的任意一侧上,以及
密封块(4),由不透明材料制成,密封所述支撑板上的半导体器件(3)并填充所述细长孔(7),在所述光学元件之间形成光学隔离划分部(7a),且在所述光学元件和所述支撑板之间留有腔体。
2.根据权利要求1所述的封装体,其中,所述孔(7)在所述支撑板的厚度方向上通过所述支撑板(2)。
3.根据权利要求1所述的封装体,其中,所述孔(7)在所述支撑板的厚度方向上不通过所述支撑板,而在所述支撑板(2)的正面侧上留有一层(44)。
4.根据前述权利要求中任一项所述的封装体,其中所述孔(7)从所述支撑板(2)的一个边缘延伸到相对边缘。
5.根据前述权利要求中任一项所述的封装体,其中,所述密封块(4)至少部分地围绕所述支撑板(2)。
6.根据前述权利要求中任一项所述的封装体,其中,在所述半导体器件(3)侧上,所述支撑板(2)提供有电连接迹线(23,25),所述电连接迹线在所述半导体器件(3)之下延伸并链接到其凸块接触(24,22),并且在所述半导体器件(3)之外延伸且链接到外部电连接装置(31,34)。
7.根据权利要求6的所述封装体,其中所述外部电连接装置包括通过所述密封块(4)的电连接过孔(31,34)。
8.根据前述权利要求中任一项所述的封装体,其中,所述半导体器件(3)包括至少一个主接收光学元件(11)和至少一个发射光学元件(13),其位于所述支撑板(2)的一侧上和在被填充有不透明材料的所述孔(7)的任意一侧上。
9.根据权利要求8所述的封装体,其中,所述主接收光学元件(11)和所述发射光学元件(13)形成在分离的芯片(9,10)中。
10.根据权利要求8所述的封装体,包括不透明层(40),形成在与所述半导体器件相对的所述支撑板(2)的正面上,在所述不透明层中具有面对所述主接收光学元件(11)和所述发射光学元件(13)的开口。
11.根据权利要求8所述的封装体,其中,所述半导体器件(3)包括设置在与所述发射光学元件(13)相同的所述孔(7)侧上的次接收光学元件(12)。
12.根据权利要求10和11所述的封装体,其中,所述不透明层(40)在所述次接收光学元件(12)前面延伸。
13.根据权利要求1-7中任一项所述的封装体,其中所述半导体器件(3)包括至少一个主接收光学元件(11)和至少一个次接收光学元件(12),其位于所述支撑板(2)的一侧上和在被填充有不透明材料的所述孔(7)的任意一侧上。
14.根据权利要求8所述的封装体,包括不透明层(40),形成在与所述半导体器件相对的所述支撑板(2)的正面上,在所述不透明层(40)中具有被定位成面对所述主接收光学元件(11)和所述次接收光学元件(13)的开口(41,61)。
15.根据权利要求13所述的封装体,其中,所述主接收光学元件(11)和所述次接收光学元件(12)形成在单个芯片(9)中。
16.根据前述权利要求中任一项所述的封装体,包括阻挡部(14,17,20),其在所述半导体器件(3)和所述支撑板(2)之间延伸并且分别在所述光学元件(11,12,13)周围。
17.一种在内部包括根据前述权利要求中任意一项所述的半导体封装体的移动电话,其中所述电话的壳体具有面对所述光学元件中的至少一个光学元件而定位的至少一个开口。
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Also Published As
Publication number | Publication date |
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CN102738132B (zh) | 2015-11-25 |
FR2973573A1 (fr) | 2012-10-05 |
US8847243B2 (en) | 2014-09-30 |
CN202736913U (zh) | 2013-02-13 |
US20120248625A1 (en) | 2012-10-04 |
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