CN102728582A - 一种直拉法生长单晶硅用石墨件的清洗方法 - Google Patents
一种直拉法生长单晶硅用石墨件的清洗方法 Download PDFInfo
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014132561A1 (ja) * | 2013-02-26 | 2014-09-04 | 信越半導体株式会社 | 炭化珪素の製造方法および炭化珪素 |
CN104368566A (zh) * | 2013-08-14 | 2015-02-25 | 台山市华兴光电科技有限公司 | 磷化铟生长坩埚清洗方法 |
CN105834171A (zh) * | 2016-05-27 | 2016-08-10 | 山东华光光电子股份有限公司 | 一种利用mocvd设备对石墨托盘进行腐蚀清洗的方法 |
CN113862783A (zh) * | 2021-09-10 | 2021-12-31 | 宁晋晶兴电子材料有限公司 | 一种单晶硅制备方法 |
Citations (3)
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WO2009151994A1 (en) * | 2008-06-09 | 2009-12-17 | Entegris, Inc. | A method to increase yield and reduce down time in semiconductor fabrication units by preconditioning components using sub-aperture reactive atom etch |
CN101660196A (zh) * | 2009-06-19 | 2010-03-03 | 南安市三晶阳光电力有限公司 | 一种延长单晶炉排气口保温罩寿命的方法和装置 |
CN201634792U (zh) * | 2009-10-23 | 2010-11-17 | 上海杰姆斯电子材料有限公司 | 一种直拉单晶炉 |
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2009151994A1 (en) * | 2008-06-09 | 2009-12-17 | Entegris, Inc. | A method to increase yield and reduce down time in semiconductor fabrication units by preconditioning components using sub-aperture reactive atom etch |
CN101660196A (zh) * | 2009-06-19 | 2010-03-03 | 南安市三晶阳光电力有限公司 | 一种延长单晶炉排气口保温罩寿命的方法和装置 |
CN201634792U (zh) * | 2009-10-23 | 2010-11-17 | 上海杰姆斯电子材料有限公司 | 一种直拉单晶炉 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014132561A1 (ja) * | 2013-02-26 | 2014-09-04 | 信越半導体株式会社 | 炭化珪素の製造方法および炭化珪素 |
CN105008278A (zh) * | 2013-02-26 | 2015-10-28 | 信越半导体股份有限公司 | 碳化硅的制造方法及碳化硅 |
CN104368566A (zh) * | 2013-08-14 | 2015-02-25 | 台山市华兴光电科技有限公司 | 磷化铟生长坩埚清洗方法 |
CN105834171A (zh) * | 2016-05-27 | 2016-08-10 | 山东华光光电子股份有限公司 | 一种利用mocvd设备对石墨托盘进行腐蚀清洗的方法 |
CN113862783A (zh) * | 2021-09-10 | 2021-12-31 | 宁晋晶兴电子材料有限公司 | 一种单晶硅制备方法 |
CN113862783B (zh) * | 2021-09-10 | 2023-09-01 | 晶澳太阳能有限公司 | 一种单晶硅制备方法 |
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