CN102723424A - Method for preparing fluorescent wafer for LED (light-emitting diode) - Google Patents
Method for preparing fluorescent wafer for LED (light-emitting diode) Download PDFInfo
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- CN102723424A CN102723424A CN2012101649439A CN201210164943A CN102723424A CN 102723424 A CN102723424 A CN 102723424A CN 2012101649439 A CN2012101649439 A CN 2012101649439A CN 201210164943 A CN201210164943 A CN 201210164943A CN 102723424 A CN102723424 A CN 102723424A
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Abstract
The invention discloses a method for preparing a fluorescent wafer for an LED (light-emitting diode), which comprises the following steps of: (1) mixing; (2) molding; (3) isostatic pressing; (4) adhesive discharge and sintering; (5) polishing and grinding; and (6) scribing. After a fluorescent wafer is prepared by using the method for preparing a fluorescent wafer for an LED, disclosed by the invention, the fluorescent wafer can be directly covered on the surface of an LED chip; compared with the traditional adhesive dispensing process, by using the method, because a situation that the concentrations of fluorescent powder in silica gel or resin are nonuniform is eliminated, the improvement of the consistency of LED products is facilitated; a plane wafer prepared by using the method is better in outlet-light uniformity and flexibility, and the thickness of the fluorescent wafer is easy to control; and the method belongs to a planarizartion process, and is suitable for integrated large-scale production.
Description
Technical field
Led light source of the present invention relates in particular to the preparation method of the fluorescence thin section on a kind of LED of overlaying on wick surface.
Background technology
In recent years, no matter be inorganic or organic luminescent device (LED/OLED), white light LED part and all received the great attention of academic and industrial circle in the application study of illumination association area.White light LEDs produces white light and mainly contains two approach: first kind is that ruddiness, green glow and three kinds of led chips of blue light are carried out the combination results white light; Second kind is to form white light with the photic conversion phosphor of LED deexcitation, and the mode that this approach is comparatively ripe is to use blue-light LED chip collocation yellow fluorescent powder (like YAG:Ce3+ etc.) to realize white light emission.
For the white light LEDs of photic conversion, the structure of fluorescent coating, characteristic etc. have fundamental influence to the performance of white light LEDs.At present the technology of such fluorescent coating of preparation be with fluorescent powder grain with after transparent colloid (like epoxy glue, silica gel etc.) mixes, through point gum machine, the amalgam layer of coating fluorescent powder grain and transparent colloid on led chip.Concrete process is:
(1) led chip is fixed on the support of band rim of a cup;
(2) with gold thread bonding LED chip both positive and negative polarity;
(3) colloid (silica gel, epoxy resin etc.) is mixed formation fluorescent material mixed liquor with fluorescent material;
(4) carrying out selecting glue through point gum machine is coated in the fluorescent material mixed liquor on the led chip.
But there is following shortcoming in above-mentioned technology: 1, the fluorescent material mixed liquor can receive the influence of carrier cup degree of lip-rounding shape and produce yellow circle or blue circle phenomenon, influences light quality; 2, the mode of selecting glue be after mechanical function such as utilization gravity flows by the fluorescent material mixed liquor with the led chip parcel, being difficult to guarantee the uniformity of fluorescent coating influences light-emitting uniformity; 3, it is poor to be coated in the repeatability of the fluorescent coating on the led chip, has greatly restricted mass production and rate of finished products.
Summary of the invention
Goal of the invention: in order to overcome the deficiency that exists in the prior art; The present invention provides a kind of LED preparation method with fluorescence thin section; Improve the distributing homogeneity of fluorescent material; Improved the physicochemical properties of fluorescence thin section simultaneously, made it to satisfy better of the requirement of follow-up packaging technology, helped realizing fluorescent material conversion hysteria LED device efficiently the phosphor powder layer physicochemical characteristic.
Technical scheme: for solving the problems of the technologies described above, the technical scheme that the present invention adopts is:
A kind of LED comprises the steps: with the preparation method of fluorescence thin section
(1) batch mixing: colloid mixture and powder form fluorescent powder paste material, and said powder is the mixture that comprises fluorescent powder grain and low-melting glass powder particles, and includes one or both materials in aluminate (Ce aluminate) or the nitride;
(2) moulding: with fluorescent powder paste material through dry-pressing formed, flow casting molding, fall band moulding or self-rotary coating molding mode and make the fluorescent material thin slice;
(3) static pressure such as: waits static pressure to handle the fluorescent material thin slice that obtains in the step (2), make that its thickness is even, size is more accurate, strengthen its mechanical strength and physical property;
(4) binder removal sintering: the fluorescent material thin slice that obtains in the step (3) is carried out low-temperature sintering to get rid of its organic principle in air or nitrogen atmosphere, make fluorescence thin section;
(5) polishing is ground: the fluorescence thin section that obtains in the step (4) is polished milled processed, improve its surface smoothness;
(6) scribing: the fluorescence thin section that obtains in the step (5) is cut into the fluorescence thin section goods through machinery or laser means.
Said method covers the way on the led chip after having changed traditional use fluorescent material and silica gel/mixed with resin again; And with the independently form appearance of fluorescence thin section; During use directly and led chip be packaged together and get final product, be beneficial to the heat radiation of led chip more, improved the useful life of LED device; Simultaneously, because the special component of powder can be avoided fluorescent powder grain phenomenon pockety in colloid, effectively improved consistency of product; And; The fluorescence thin section that this method obtains has been removed the organic principle of introducing in the preparation process, has improved the physicochemical properties of fluorescence thin section; Can satisfy of the requirement of follow-up packaging technology better, help realizing fluorescent material conversion hysteria LED device efficiently the fluorescence thin section physicochemical characteristic.
In the said step (1), can be doped with ceramic powder in the powder.
In the said step (1), colloid can be existing various colloidal materials, like PMMA, PVC or other high-molecular organic material etc.
In the said step (1), fluorescent powder grain is the fluorescent powder grain of doped rare earth element, and this rare earth element can occur with oxide or nitride form, occurs with crystal structures such as yttrium-aluminium-garnet, strontium aluminate, silicon nitrides such as strontium.
In the said step (1), fluorescent material is the amalgam of a kind of fluorescent material or two or more fluorescent material; If a kind of fluorescent material when needing the fluorescence thin section of unlike material fluorescent material material, can build up through the fluorescence thin section of different fluorescent material materials and obtains; If two or more fluorescent material just mix in beginning, just can access the fluorescence thin section of multiple unlike material mixing at last.
Preferably, in the said step (1), the fluorescent powder grain gross mass accounts for 10%～55% of fluorescent powder paste material gross mass, and the size of fluorescent powder grain is in 5 μ m～25 mu m ranges.
Preferably, in the said step (1), the glass powder particles gross mass accounts for 0.5%～10% of fluorescent powder paste material gross mass, and the size of glass powder particles is in 1 μ m～15 mu m ranges.
Preferably, in the said step (2), the temperature of dry-pressing formed or flow casting molding is in 100 ℃～140 ℃ scopes.
Preferably, in the said step (3), wait static pressure to handle to the fluorescent material thin slice after, the thickness evenness of fluorescence thin section should be less than 1%.
Preferably, in the said step (4), low sintering method is one or more combination in heated oxide ashing method, removing of photoresist by plasma method and the laser ashing method; Can reach fusing low-melting glass powder particles and the purpose of removing colloid through heating means.
Preferably, in the said step (5), fluorescence thin section polished milled processed after, the fineness of fluorescence thin section should satisfy Ra＜0.2mm, to guarantee the optical property of fluorescence thin section.
Preferably, in the said step (6), through grid type scribing mode fluorescence thin section is cut into the fluorescence thin section goods, the fluorescence thin section goods after the cutting have certain softness/foldability.
The method that this case provides not only is fit to the white light LED part preparation of gold-tinted fluorescent material+blue-light LED chip, also is suitable for the white light LEDs implementation of ultraviolet LED chip+multicolor phosphor (for example RCTB three primary colors fluorescent powder); In the fluorescent material preparation of sections process of PCLED type white light LEDs, has using value especially; Both can be applied on the led chip of well cutting; Meet the industrial technology requirement of present most LED encapsulation enterprise, also can be applied to (wafer is on the wafer scale) before the cutting of LED wafer, behind the surface coverage fluorescent material thin slice of led chip group; Carry out chip cutting, encapsulation again, have very high repetitive operation property and volume production consistency.
Beneficial effect: LED provided by the invention can directly overlay the led chip surface after making fluorescence thin section with the preparation method of fluorescence thin section, compares with traditional gluing process; Owing to eliminated fluorescent material not the waiting of concentration in silica gel or resin; Favourable raising LED consistency of product, this method make that the light-emitting uniformity of plane lamina is better, pliability good, and the thickness of fluorescence thin section is controlled easily simultaneously; Belong to planarization technology, be fit to the production of integrated scale.
Description of drawings
Fig. 1 is a manufacture craft flow chart of the present invention;
Fig. 2 is the structural representation of the LED device of use goods of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is done explanation further.
Be illustrated in figure 1 as the process chart of a kind of LED, describe with regard to a kind of concrete steps below with the preparation method of fluorescence thin section:
After fluorescent powder grain and low-melting glass powder particles that (1) will be doped with the Ce aluminate mixed, heating and melting glass dust made its surface at fluorescent powder grain form one deck integument;
(2) material that step (1) is obtained is milled, is screened, and obtains having the phosphor powder of glass integument;
(3) get colloid (like PMMA/PVA), phosphor powder and deionized water and mix, form the dispersion of stable fluorescence powder particles in colloid (like PMMA/PVA), i.e. fluorescent powder paste material with glass integument;
(4) method through the thin slice curtain coating on casting machine obtains having certain thickness fluorescent material thin slice;
(5) the fluorescent material thin slice is handled through waiting static pressure,, made its thickness even simultaneously to improve the device mechanical strength;
(6) the fluorescent material thin slice is put into air-heating furnace, heating surpasses the temperature of glass dust fusing point, keeps a period of time, treats to lower the temperature behind the organic principle burning-off wherein, takes out and obtains fluorescence thin section;
(7) fluorescence thin section is polished milled processed, improve its surface smoothness;
(8) obtain having the fluorescence thin section goods of certain size requirement through laser scribing;
(9) method of fluorescence thin section goods through cold pad pasting formed the LED device directly overlaying under the vacuum condition on the good led chip of solid crystalline substance.
As shown in Figure 2, the structural representation for the LED device that covers fluorescence thin section comprises led chip 1, fluorescence thin section 3, pottery or plastic 4 and is arranged on the conducting wire 2 on the substrate 4; Led chip 1 is fixed on the LED land of conducting wire 2, and the two ends that stretch out conducting wire 2 are connected with outer electrode respectively, on led chip 1, is coated with fluorescence thin section 3.
The above only is a preferred implementation of the present invention; Be noted that for those skilled in the art; Under the prerequisite that does not break away from the principle of the invention, can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (10)
1. a LED is with the preparation method of fluorescence thin section, and it is characterized in that: this method comprises the steps:
(1) batch mixing: colloid mixture and powder form fluorescent powder paste material, and said powder is the mixture that comprises fluorescent powder grain and glass powder particles, and wherein fluorescent material is to include the aluminate of rare earth element or one or both materials in the nitride;
(2) moulding: with fluorescent powder paste material through dry-pressing formed, flow casting molding, get rid of band moulding or self-rotary coating molding mode and make the fluorescent material thin slice;
(3) static pressure such as: the fluorescent material thin slice that obtains in the step (2) is waited the static pressure processing, make its thickness even, strengthen its mechanical strength and physical property;
(4) binder removal sintering: the fluorescent material thin slice that obtains in the step (3) is carried out low-temperature sintering to get rid of its organic principle in air or nitrogen atmosphere, make fluorescence thin section;
(5) polishing is ground: the fluorescence thin section that obtains in the step (4) is polished milled processed, improve its surface smoothness;
(6) scribing: the fluorescence thin section that obtains in the step (5) is cut into the fluorescence thin section goods through machinery or laser means.
2. LED according to claim 1 is characterized in that with the preparation method of fluorescence thin section: in the said step (1), be doped with ceramic powder in the powder.
3. LED according to claim 1 is characterized in that with the preparation method of fluorescence thin section: in the said step (1), fluorescent powder grain is the fluorescent powder grain of doped rare earth element.
4. LED according to claim 1 is characterized in that with the preparation method of fluorescence thin section: in the said step (1), fluorescent material is the amalgam of a kind of fluorescent material or two or more fluorescent material.
5. LED according to claim 1 is characterized in that with the preparation method of fluorescence thin section: in the said step (1), the fluorescent powder grain gross mass accounts for 10%～55% of fluorescent powder paste material gross mass, and the size of fluorescent powder grain is in 5 μ m～25 mu m ranges.
6. LED according to claim 1 is characterized in that with the preparation method of fluorescence thin section: in the said step (1), the glass powder particles gross mass accounts for 0.5%～10% of fluorescent powder paste material gross mass, and the size of glass powder particles is in 1 μ m～15 mu m ranges.
7. LED according to claim 1 is characterized in that with the preparation method of fluorescence thin section: in the said step (2), the temperature of dry-pressing formed or flow casting molding is in 100 ℃～140 ℃ scopes.
8. LED according to claim 1 is characterized in that with the preparation method of fluorescence thin section: in the said step (3), wait static pressure to handle to the fluorescent material thin slice, make its thickness evenness less than 1%.
9. LED according to claim 1 is characterized in that with the preparation method of fluorescence thin section: in the said step (4), low sintering method is one or more combination in heated oxide ashing method, removing of photoresist by plasma method and the laser ashing method.
10. LED according to claim 1 is characterized in that with the preparation method of fluorescence thin section: in the said step (5), fluorescence thin section is polished milled processed, make its fineness Ra＜0.2mm.
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| CN201210164943.9A CN102723424B (en) | 2012-05-25 | 2012-05-25 | Method for preparing fluorescent wafer for LED (light-emitting diode) |
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Cited By (11)
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| CN103143484A (en) * | 2013-02-07 | 2013-06-12 | 华南理工大学 | Method for controlling phosphor powder coating thickness |
| CN103296184A (en) * | 2013-05-31 | 2013-09-11 | 左洪波 | Manufacturing method for light-emitting diode (LED) lamp strip using sapphire as chip support |
| CN103311417A (en) * | 2013-06-04 | 2013-09-18 | 左洪波 | Phosphor coating method for high-power LEDs |
| CN103346244A (en) * | 2013-06-13 | 2013-10-09 | 苏州金科信汇光电科技有限公司 | LED with fluorescent film |
| CN103855260A (en) * | 2014-03-20 | 2014-06-11 | 杭州耀迪科技有限公司 | Method for manufacturing light switching device for high-heat-dissipating and high-light-transmitting LED illumination |
| CN105140378A (en) * | 2015-09-15 | 2015-12-09 | 易美芯光（北京）科技有限公司 | LED package structure and technology employing glass fluorescence sheet |
| CN105244429A (en) * | 2015-10-23 | 2016-01-13 | 佛山市中昊光电科技有限公司 | Fluorescent power film applied to flip LED chip, preparation method thereof and flip LED chip |
| CN105655467A (en) * | 2014-11-10 | 2016-06-08 | 深圳市绎立锐光科技开发有限公司 | White LED device and method for making same |
| CN106186678A (en) * | 2015-05-26 | 2016-12-07 | 台湾彩光科技股份有限公司 | Method for producing glass phosphor sheet |
| CN107305169A (en) * | 2016-04-19 | 2017-10-31 | 中国石油化工股份有限公司 | A kind of method for preparing hydrocarbon source rock kerogen light thin slice |
| CN111509112A (en) * | 2013-07-08 | 2020-08-07 | 亮锐控股有限公司 | Wavelength converted semiconductor light emitting device |
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| CN103296184A (en) * | 2013-05-31 | 2013-09-11 | 左洪波 | Manufacturing method for light-emitting diode (LED) lamp strip using sapphire as chip support |
| CN103311417A (en) * | 2013-06-04 | 2013-09-18 | 左洪波 | Phosphor coating method for high-power LEDs |
| CN103346244A (en) * | 2013-06-13 | 2013-10-09 | 苏州金科信汇光电科技有限公司 | LED with fluorescent film |
| CN111509112A (en) * | 2013-07-08 | 2020-08-07 | 亮锐控股有限公司 | Wavelength converted semiconductor light emitting device |
| CN111509112B (en) * | 2013-07-08 | 2024-04-02 | 亮锐控股有限公司 | Wavelength-converted semiconductor light emitting device |
| CN103855260A (en) * | 2014-03-20 | 2014-06-11 | 杭州耀迪科技有限公司 | Method for manufacturing light switching device for high-heat-dissipating and high-light-transmitting LED illumination |
| CN105655467B (en) * | 2014-11-10 | 2021-02-09 | 深圳市绎立锐光科技开发有限公司 | White light LED device and manufacturing method thereof |
| CN105655467A (en) * | 2014-11-10 | 2016-06-08 | 深圳市绎立锐光科技开发有限公司 | White LED device and method for making same |
| CN106186678A (en) * | 2015-05-26 | 2016-12-07 | 台湾彩光科技股份有限公司 | Method for producing glass phosphor sheet |
| CN105140378A (en) * | 2015-09-15 | 2015-12-09 | 易美芯光（北京）科技有限公司 | LED package structure and technology employing glass fluorescence sheet |
| CN105244429A (en) * | 2015-10-23 | 2016-01-13 | 佛山市中昊光电科技有限公司 | Fluorescent power film applied to flip LED chip, preparation method thereof and flip LED chip |
| CN107305169A (en) * | 2016-04-19 | 2017-10-31 | 中国石油化工股份有限公司 | A kind of method for preparing hydrocarbon source rock kerogen light thin slice |
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