CN103855260A - Method for manufacturing light switching device for high-heat-dissipating and high-light-transmitting LED illumination - Google Patents
Method for manufacturing light switching device for high-heat-dissipating and high-light-transmitting LED illumination Download PDFInfo
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- CN103855260A CN103855260A CN201410102862.5A CN201410102862A CN103855260A CN 103855260 A CN103855260 A CN 103855260A CN 201410102862 A CN201410102862 A CN 201410102862A CN 103855260 A CN103855260 A CN 103855260A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The invention relates to a method for manufacturing a light switching device for high-heat-dissipating and high-light-transmitting LED illumination. The method is characterized by comprising the first step of mixing fluorescent powder, heat conduction materials, base materials and an adhesion agent evenly to obtain powder A, the second step of mechanically casting the powder A to form a base material, the third step of sintering the base material obtained in the second step to enable the base material to be good in mechanical strength and not prone to breaking, and the fourth step of grinding and polishing the sintered base material to obtain the light switching device. According to the method, the fluorescent powder and the heat conduction materials are adopted, and the light switching device has the light switching performance and the high-heat-dissipating performance. The light-emitting efficiency of an LED can be effectively improved by utilizing the light switching device for packaging. Due to the fact that the heat dissipating performance of the light switching device is good, aluminum and heat dissipating sheets can be removed, and the weight of an LED lamp is reduced. When the light switching device is used in a long-distance light-emitting membrane lamp, the light-emitting area of the lamp can be increased, and dazzling can be reduced.
Description
Technical field
The present invention relates to field of photoelectric technology, relate in particular to the manufacture method of the high printing opacity LED of a kind of high heat radiation illumination light switching device.
Background technology
LED technology has obtained significant progress in recent years, be widely used in demonstration, view, backlight, outdoor lighting, room lighting etc., particularly room lighting, along with improving constantly of white light LEDs performance, to the forbidding of incandescent lamp, LED illumination is subject to the height favor in market, and the share that accounts for electric source lighting market is also more and more higher.People also propose higher requirement to LED illumination, not only require better energy-conserving and environment-protective performance, and meet to a greater extent people's visual demand in product appearance, aspect photochromic.The present invention relates to the high printing opacity LED illumination light switching device of a kind of high heat radiation, this base material has the performance of light conversion and high heat radiation, can be used as in 4 π electroluminescent lamp encapsulation, long-range luminescent film etc.This LED with base material encapsulation can improve the light extraction efficiency of LED effectively.The heat dispersion of this encapsulation technology is fine in addition, does not need to dispel the heat with the fin of aluminium and so on, has effectively alleviated the weight of LED lamp, has improved its exterior appearance simultaneously.For long-range luminescent film lamp, can increase the light-emitting area of lamp, reduce dazzle etc.
Summary of the invention
The object of the invention is to solve problem set forth above, the manufacture method of the high printing opacity LED of a kind of high heat radiation illumination light switching device is provided.
Technical scheme of the present invention is such:
A manufacture method for the high printing opacity LED of high heat radiation illumination light switching device, is characterized in that, comprises the following steps:
1), fluorescent material, Heat Conduction Material, substrate material and binding agent are mixed, obtain powders A;
2), by powders A by mechanical die casting, form base material;
3) by step 2) in base material carry out sintering, make it have good mechanical strength, be difficult for broken;
4) base material step 3) being sintered grinds, polishing, obtains light-switching device.
As preferably, described fluorescent material is made up of one or both or three kinds in yttrium-aluminium-garnet, silicate and nitride series.
As preferably, described Heat Conduction Material is aluminium oxide or aluminium nitride material.
As preferably, described substrate material is silicate glass powder or low melting point ceramic powders or high temperature polymeric materials.
As preferably, the sintering described in step 3) carries out in nitrogen atmosphere, and sintering time is for being no less than 30 minutes, and sintering temperature is 600-900 ℃.
As preferably, described base material is square or circular or strip or straw hat shape.
As preferably, the mass fraction of described fluorescent material is 0.5-20%, and the mass fraction of Heat Conduction Material is 10-50%, and the mass fraction of substrate material is 20-70%, and the mass fraction of binding agent is 1-3%.
As preferably, described light-switching device can be used as the base plate for packaging of blue chip, after encapsulation, can obtain white light, also can be used as the long-range luminous luminescent film of LED, after encapsulating, can obtain white light.
Beneficial effect of the present invention is as follows:
1, fluorescent material and Heat Conduction Material are dissolved in the present invention, make the present invention there is the performance of light conversion and high heat radiation, use the present invention to encapsulate the luminous efficiency that can effectively improve LED, and due to perfect heat-dissipating, can exempt the installation of the fin such as aluminium, alleviate the weight of LED lamp;
2, when the present invention is for long-range luminescent film lamp, can increase the light-emitting area of lamp, reduce dazzle.
Accompanying drawing explanation
Fig. 1 is square structure schematic diagram of the present invention;
Fig. 2 is circular configuration schematic diagram of the present invention;
Fig. 3 is strip structural representation of the present invention;
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are further elaborated:
A manufacture method for the high printing opacity LED of high heat radiation illumination light switching device, is characterized in that, comprises the following steps:
1), fluorescent material, Heat Conduction Material, substrate material and binding agent are mixed, obtain powders A;
2), by powders A by mechanical die casting, form base material;
3) by step 2) in base material carry out sintering, make it have good mechanical strength, be difficult for broken;
4) base material step 3) being sintered grinds, polishing, obtains light-switching device.
Fluorescent material and Heat Conduction Material are put into substrate, can make the gained light-switching device not only can be luminous but also there is high-cooling property.
Described fluorescent material is made up of one or both or three kinds in yttrium-aluminium-garnet, silicate and nitride series, can adjust the colour temperature and development index of device when luminous by these compositions.
Described Heat Conduction Material is aluminium oxide or aluminium nitride material, and Heat Conduction Material is sneaked in light-switching device, can promote light-switching device heat dispersion.
Described substrate material is silicate glass powder or low melting point ceramic powders or high temperature polymeric materials, and base material adopts resistant to elevated temperatures material, can reduce the temperature of technical process, reduces the infringement to fluorescent material and heat sink material.
Sintering described in step 3) carries out in nitrogen atmosphere, and sintering time is for being no less than 30 minutes, and sintering temperature is 600-900 ℃, can increase the mechanical strength of light-switching device by sintering.
Described base material is square or circular or strip or straw hat shape, and difform base material is made difform light-switching device, can meet the encapsulation of multiple LED device.
The mass fraction of described fluorescent material is 0.5-20%, and the mass fraction of Heat Conduction Material is 10-50%, and the mass fraction of substrate material is 20-70%, and the mass fraction of binding agent is 1-3%.
Described light-switching device can be used as the base plate for packaging of blue chip, after encapsulation, can obtain white light, also can be used as the long-range luminous luminescent film of LED, after encapsulation, can obtain white light.
Embodiment 1
By 5g yttrium-aluminium-garnet (YAG) yellow fluorescent powder, 20g alumina powder, 75g low melting point transparent ceramic powder; after 1g binding agent weighs; put into glass beaker, then stir with glass bar, it is fully mixed; material after mixing is put into die casting and carry out die casting; the high 30*30*1mm that is of a size of of length and width of mould, the high temperature furnace of the good base material of die casting being put into nitrogen protection carries out sintering, makes its transparent ceramic; then ground, polishing, obtain device as square in Fig. 1.
Embodiment 2
By 4g yttrium-aluminium-garnet (YAG) yellow fluorescent powder; 1g nitride rouge and powder; 20g alumina powder; 75g low melting point transparent ceramic powder; after 1g binding agent weighs; put into glass beaker; then stir with glass bar; it is fully mixed, the material after mixing is put into die casting and carry out die casting, the high 30*30*1mm that is of a size of of length and width of mould; the high temperature furnace of the good base material of die casting being put into nitrogen protection carries out sintering; make its transparent ceramic, then ground, polishing, obtain device as square in Fig. 1.
Embodiment 3
By 5g yttrium-aluminium-garnet (YAG) yellow fluorescent powder, 20g aluminium nitride powder, after 75g glass dust weighs, put into crucible, put it in high temperature furnace, make glass dust melting liquefaction, then pour in the mould of 30*1mm size, after cooling, can obtain the clear glass substrate that contains fluorescent material and heat sink material, then be ground, polishing, obtain device as circular in Fig. 2.
Embodiment 4
By 4g yttrium-aluminium-garnet (YAG) yellow fluorescent powder, 1g nitride rouge and powder, 20g alumina powder, 75g low melting point transparent ceramic powder, puts into crucible, put it in high temperature furnace, make glass dust melting liquefaction, then pour in the mould of 30*2*1mm size, can obtain the clear glass substrate that contains fluorescent material and heat sink material after cooling, then ground, polishing, obtain as Fig. 3 strip device.
Embodiment 5
By 5g yttrium-aluminium-garnet (YAG) yellow fluorescent powder, 20g alumina powder, 75g low-temperature transparent ceramic powders; after 1g binding agent weighs; put into glass beaker, then stir with glass bar, it is fully mixed; material after mixing is put into die casting and carry out die casting; the high 60*60*1mm that is of a size of of length and width of mould, the high temperature furnace of the good base material of die casting being put into nitrogen protection carries out sintering, makes its transparent ceramic; then ground, polishing, obtain device as square in Fig. 1.
Embodiment 6
By 4g yttrium-aluminium-garnet (YAG) yellow fluorescent powder; 1g nitride rouge and powder; 20g alumina powder; 75g low melting point transparent ceramic powder; after 1g binding agent weighs; put into glass beaker; then stir with glass bar; it is fully mixed, the material after mixing is put into die casting and carry out die casting, the high 60*60*1mm that is of a size of of length and width of mould; the high temperature furnace of the good base material of die casting being put into nitrogen protection carries out sintering; make its transparent ceramic, then ground, polishing, obtain device as square in Fig. 1.
Embodiment 7
By 5g yttrium-aluminium-garnet (YAG) yellow fluorescent powder, 20g aluminium nitride powder, after 75g glass dust weighs, put into crucible, put it in high temperature furnace, make glass dust melting liquefaction, then pour in the mould of 60*60*1mm size, after cooling, can obtain the clear glass substrate that contains fluorescent material and heat sink material, then be ground, polishing, obtain device as square in Fig. 1.
Above-described is only the preferred embodiment of the present invention; it should be pointed out that the those of ordinary skill in the art, do not departing under the prerequisite of core technology feature of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (8)
1. a manufacture method for the high printing opacity LED of high heat radiation illumination light switching device, is characterized in that, comprises the following steps:
1), fluorescent material, Heat Conduction Material, substrate material and binding agent are mixed, obtain powders A;
2), by powders A by mechanical die casting, form base material;
3) by step 2) in base material carry out sintering, make it have good mechanical strength, be difficult for broken;
4) base material step 3) being sintered grinds, polishing, obtains light-switching device.
2. manufacture method according to claim 1, is characterized in that, described fluorescent material is made up of one or both or three kinds in yttrium-aluminium-garnet, silicate and nitride series.
3. manufacture method according to claim 1, is characterized in that, described Heat Conduction Material is aluminium oxide or aluminium nitride material.
4. manufacture method according to claim 1, is characterized in that, described substrate material is silicate glass powder or low melting point ceramic powders or high temperature polymeric materials.
5. manufacture method according to claim 1, is characterized in that, the sintering described in step 3) carries out in nitrogen atmosphere, and sintering time is for being no less than 30 minutes, and sintering temperature is 600-900 ℃.
6. manufacture method according to claim 1, is characterized in that, described base material is square or circular or strip or straw hat shape.
7. manufacture method according to claim 1, is characterized in that, the mass fraction of described fluorescent material is 0.5-20%, and the mass fraction of Heat Conduction Material is 10-50%, and the mass fraction of substrate material is 20-70%, and the mass fraction of binding agent is 1-3%.
8. manufacture method according to claim 1, is characterized in that, described light-switching device can be used as the base plate for packaging of blue chip, after encapsulation, can obtain white light, also can be used as the long-range luminous luminescent film of LED, after encapsulation, can obtain white light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410102862.5A CN103855260A (en) | 2014-03-20 | 2014-03-20 | Method for manufacturing light switching device for high-heat-dissipating and high-light-transmitting LED illumination |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410102862.5A CN103855260A (en) | 2014-03-20 | 2014-03-20 | Method for manufacturing light switching device for high-heat-dissipating and high-light-transmitting LED illumination |
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| CN103855260A true CN103855260A (en) | 2014-06-11 |
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| CN201410102862.5A Pending CN103855260A (en) | 2014-03-20 | 2014-03-20 | Method for manufacturing light switching device for high-heat-dissipating and high-light-transmitting LED illumination |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108070853A (en) * | 2017-12-15 | 2018-05-25 | 广东昭信照明科技有限公司 | A kind of ceramic slurry, preparation method and composite ceramics heat-radiating substrate |
| CN111252799A (en) * | 2020-01-22 | 2020-06-09 | 东北大学秦皇岛分校 | Preparation of YAG Ce by containerless solidification3+Method for mixing amorphous material with aluminum nitride |
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| CN102173771A (en) * | 2010-11-29 | 2011-09-07 | 天津理工大学 | Method for preparing yttrium and aluminum garnet luminous ceramic body for white light light-emitting diode (LED) |
| US20120178193A1 (en) * | 2009-09-30 | 2012-07-12 | Bright Crystals Technology, Inc. | Method for manufacturing led with transparent ceramics |
| CN102723424A (en) * | 2012-05-25 | 2012-10-10 | 苏州晶品光电科技有限公司 | Method for preparing fluorescent wafer for LED (light-emitting diode) |
| CN102730974A (en) * | 2012-06-08 | 2012-10-17 | 王双喜 | Slurry for preparation of glass fluorescent layer used for LED encapsulation |
| CN103258938A (en) * | 2013-05-03 | 2013-08-21 | 杭州耀迪科技有限公司 | Manufacturing method of heat conduction light-emitting diode (LED) light bar package substrate comprising fluorescent powder |
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2014
- 2014-03-20 CN CN201410102862.5A patent/CN103855260A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120178193A1 (en) * | 2009-09-30 | 2012-07-12 | Bright Crystals Technology, Inc. | Method for manufacturing led with transparent ceramics |
| CN102173771A (en) * | 2010-11-29 | 2011-09-07 | 天津理工大学 | Method for preparing yttrium and aluminum garnet luminous ceramic body for white light light-emitting diode (LED) |
| CN102723424A (en) * | 2012-05-25 | 2012-10-10 | 苏州晶品光电科技有限公司 | Method for preparing fluorescent wafer for LED (light-emitting diode) |
| CN102730974A (en) * | 2012-06-08 | 2012-10-17 | 王双喜 | Slurry for preparation of glass fluorescent layer used for LED encapsulation |
| CN103258938A (en) * | 2013-05-03 | 2013-08-21 | 杭州耀迪科技有限公司 | Manufacturing method of heat conduction light-emitting diode (LED) light bar package substrate comprising fluorescent powder |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108070853A (en) * | 2017-12-15 | 2018-05-25 | 广东昭信照明科技有限公司 | A kind of ceramic slurry, preparation method and composite ceramics heat-radiating substrate |
| CN108070853B (en) * | 2017-12-15 | 2020-01-21 | 广东昭信照明科技有限公司 | Ceramic slurry, preparation method and composite ceramic heat dissipation substrate |
| CN111252799A (en) * | 2020-01-22 | 2020-06-09 | 东北大学秦皇岛分校 | Preparation of YAG Ce by containerless solidification3+Method for mixing amorphous material with aluminum nitride |
| CN111252799B (en) * | 2020-01-22 | 2022-06-28 | 东北大学秦皇岛分校 | Preparation of YAG Ce by containerless solidification3+Method for mixing amorphous material with aluminum nitride |
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