CN102723321B - A kind of photoelectric coupler lead frame and photoelectrical coupler - Google Patents
A kind of photoelectric coupler lead frame and photoelectrical coupler Download PDFInfo
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- CN102723321B CN102723321B CN201210226339.4A CN201210226339A CN102723321B CN 102723321 B CN102723321 B CN 102723321B CN 201210226339 A CN201210226339 A CN 201210226339A CN 102723321 B CN102723321 B CN 102723321B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
The present invention relates to a kind of photoelectric coupler lead frame and photoelectrical coupler, this lead frame includes the lead frame unit of multiple matrix arrangement, each lead frame unit comprise be respectively used to installation infrared light transmitting chip and infrared light receiving chip can relative the first chip attach portion of bending and the second chip attach portion, and first die bond bonding wire portion and the second die bond bonding wire portion, and the first chip attach portion is connected with positive pole pin and negative pole pin respectively with the first die bond bonding wire portion, second chip attach portion is connected with collector electrode pin and emitter pin respectively with the second die bond bonding wire portion.Like this, be processed in photoelectrical coupler process at this single piece leadframes of employing, the bonding of infrared light emission chip and infrared light receiving chip can be completed with an equipment during die bond simultaneously, production efficiency is high, saves energy consumption, reduces blaster fuse frame material, without the need to lead frame contraposition, location, technology difficulty obviously reduces, and the structure of photoelectrical coupler is simpler, and production cost is lower.
Description
Technical field
The present invention relates to photoelectrical coupler technical field, relate to a kind of photoelectric coupler lead frame and photoelectrical coupler.
Background technology
Photoelectrical coupler a kind ofly infrared light emission device and infrared light are accepted device and signal processing circuit etc. is encapsulated in device in same shell.When input electrical signal is added on input luminescent device LED, LED is luminous, light receiving element receiving optical signals also converts the signal of telecommunication to, then the signal of telecommunication is directly exported, or the signal of telecommunication is amplified and is processed into the output of standard digital level, so just achieve conversion and the transmission of " electrical-optical-electricity ", the medium only transmitted, thus input and output are insulate, also referred to as electric isolution on electrically.
The production technology of optocoupler now adopts the international technique seventies, (die bond → sintering → bonding wire → A chip point silica gel → silica gel solidification → A/B support superimposed → No. 1 mould encapsulate → go No. 1 mould cull → No. 2 mould and encapsulate → go No. 2 mould cull → plating → shaping → Hi-pot tests → electrically minute BIN → printing → visual examination).As Fig. 1 and Fig. 2, the lead frame of existing photoelectrical coupler is all be formed by stacking by A lead frame and B lead frame, its core technology is controlled by abroad, need in production process to be bonded in A chip attach portion 11 ' and B chip attach portion 12 ' that A lead frame and B lead frame be provided with by corresponding respectively to A chip (GaAs LED Chip) and B chip (Photo Transistor chip), and must accurately aim at A chip attach portion 11 ' and B chip attach portion 12 ', location, ensure that this A chip is parallel up and down with B chip, namely the two upper and lower correlation ground of chip are located on A lead frame and B lead frame respectively, and must complete on two equipment during die bond, technique is cumbersome, rate flow is slow, energy consumption is high, cost is high, technical process control difficulty is large.
Summary of the invention
For solving the above-mentioned problems in the prior art, the invention provides a kind of photoelectric coupler lead frame and photoelectrical coupler, this photoelectrical coupler is by adopting this single piece leadframes, structure is simpler, production efficiency is high, saves power consumption, reduces frame material, significantly reduce production cost, reduce technical process control difficulty simultaneously.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of photoelectric coupler lead frame, include the lead frame unit of multiple matrix arrangement, each described lead frame unit comprise be respectively used to installation infrared light transmitting chip and infrared light receiving chip can relative the first chip attach portion of bending and the second chip attach portion, and first die bond bonding wire portion and the second die bond bonding wire portion, and described first chip attach portion is connected with positive pole pin and negative pole pin respectively with the first die bond bonding wire portion, described second chip attach portion is connected with collector electrode pin and emitter pin respectively with the second die bond bonding wire portion.
As the present invention one preferred version, described lead frame is made through punching and plating by sheet metal strip.
A kind of photoelectrical coupler, include the lead frame unit of the photoelectric coupler lead frame described in the claims 1 or 2 of encapsulation one, infrared light emission chip and infrared light receiving chip, first chip attach portion of described lead frame unit with the second chip attach portion bending and parallel relatively, described infrared light emission chip and infrared light receiving chip are located in described first chip attach portion and the second chip attach portion respectively, and are connected with described lead frame unit first die bond bonding wire portion and the second die bond bonding wire portion by wire.
As the present invention one preferred version, described first chip attach portion and the second chip attach portion are perpendicular to described lead frame unit.
As the present invention one preferred version, being located on described lead frame unit of described infrared light emission chip and infrared light receiving chip left and right correlation.
As the present invention one preferred version, described infrared light emission chip and infrared light receiving chip are GaAsLED chip and phototriode respectively, and described wire is gold thread.
The invention has the beneficial effects as follows:
The present invention passes through technique scheme, be processed in photoelectrical coupler process at this single piece leadframes of employing, the bonding work of infrared light emission chip and infrared light receiving chip can be completed with an equipment during die bond simultaneously, accelerate product stream rotary speed, save power consumption, reduce frame material, without the need to carrying out contraposition, location to two panels lead frame as traditional handicraft, reduce technical process control difficulty, the structure of photoelectrical coupler is simpler, and production cost reduces greatly.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing photoelectric coupler lead frame;
Fig. 2 is by the photoelectrical coupler sectional structure schematic diagram of the existing lead frame of Fig. 1;
Fig. 3 is the partial structurtes schematic diagram of photoelectric coupler lead frame embodiment of the present invention;
Fig. 4 is the work flow effect schematic diagram adopting lead frame of the present invention to be processed into photoelectrical coupler;
Fig. 5 is the sectional structure schematic diagram of the photoelectrical coupler embodiment adopting lead frame of the present invention to process.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As as shown in Fig. 3 to Fig. 5, a kind of photoelectric coupler lead frame described in the embodiment of the present invention, be made through punching and plating by sheet metal strip, include the lead frame unit 1 of multiple matrix arrangement, each described lead frame unit 1 comprises can relative the first chip attach portion 11 and the second chip attach portion 12 of bending, and first die bond bonding wire portion 13 and the second die bond bonding wire portion 14, and described first chip attach portion 11 is connected with positive pole pin 15 and negative pole pin 16 respectively with the first die bond bonding wire portion 13, described second chip attach portion 12 is connected with collector electrode pin 17 and emitter pin 18 respectively with the second die bond bonding wire portion 14, each described lead frame unit (1) also comprises and to be oppositely arranged and the first quadra jaggy and the second quadra are established in middle, opposite end, described first chip attach portion (11) and the first die bond bonding wire portion (13) are separately positioned on the first quadra of breach both sides, and the first chip attach portion (11) is positioned at the first quadra, described second chip attach portion (12) and the second die bond bonding wire portion (14) are separately positioned on the second quadra of breach both sides, and the second chip attach portion (12) is positioned at the second shape framework.
When adopting this lead frame production and processing photoelectrical coupler, first by infrared light emission chip 2 and infrared light receiving chip 3 through conductive silver glue die bond, sinter be separately fixed at each lead frame unit 1 the first chip attach portion 11 and the second chip attach portion 12 on, and connected with the first corresponding die bond bonding wire portion 13 and the second die bond bonding wire portion 14 respectively by wire (gold thread) 4, and to 2 glue (silica gel) solidifications of infrared light emission chip (as Fig. 4 a); Then by the first chip attach portion 11 and the second chip attach portion 12 bending, it is made to be parallel to each other and perpendicular to this lead frame (lead frame unit 1) (as Fig. 4 b); Last carry out encapsulation successively and go cull, plating and shaping, photoelectrical coupler (as Fig. 4 c and Fig. 4 d) can be produced.Photoelectrical coupler (as Fig. 5) described in each, include the lead frame unit 1 by being encapsulated one by interior epoxy resin layer 5 and outer epoxy resin layer 6, infrared light emission chip 2 and infrared light receiving chip 3, first chip attach portion 11 of described lead frame unit 1 with the second chip attach portion 12 bending and parallel relatively, perpendicular to described lead frame unit, described infrared light emission chip 2 and infrared light receiving chip 3 are GaAs LED chip and phototriode respectively, and correlation ground in left and right is located in the first chip attach portion 11 and the second chip attach portion 12 respectively, and be connected by the first die bond bonding wire portion 13 of wire 4 and lead frame unit 1 and the second die bond bonding wire portion 14.
Like this, be processed in photoelectrical coupler process at this single piece leadframes of employing, the bonding work of infrared light emission chip 2 and infrared light receiving chip 3 can be completed with an equipment during die bond simultaneously, accelerate product stream rotary speed, save power consumption, reduce frame material, without the need to carrying out contraposition, location to two panels lead frame as traditional handicraft, reduce technical process control difficulty, the structure of photoelectrical coupler is simpler, and production cost reduces greatly.
Such as:
The overall length of traditional structure lead frame biplate is 212mm × 2=424mm, wide 52mm, and design finished product quantity is 10 row, often arranges 8PCS, and the superimposed rear finished product quantity of biplate lead frame is 80PCS, and actual materials area is: 212 × 52 × 2=22048mm;
The overall length of lead frame of the present invention is 207mm, wide 52mm, and design finished product quantity is 14 row, often arranges 8PCS, and monolithic finished product quantity is 112PCS, and actual materials area is: 207 × 52=10764mm;
Traditional structure every PCS blaster fuse frame material usable floor area is: 22048mm ÷ 80PCS=275.6mm, and the every PCS lead frame of the present invention (lead frame unit 1) materials'use area is: 10764mm ÷ 112PCS=96.107mm; The present invention every PCS blaster fuse frame material usable floor area is 34.87% of traditional structure every PCS blaster fuse frame material usable floor area.
Traditional handicraft energy consumption total power consumption per hour is about 91KW, per hourly manufactures a finished product 22000, by 8 hours every days, produces calculating in 22 days the moon.Moon power consumption 91 × 8 × 22=16016KW, the total amount that manufactures a finished product by the moon is: 22000 × 8 × 22=3872000 only.
Present invention process energy consumption total power consumption per hour is about 91KW, per hourly manufactures a finished product 30800, by 8 hours every days, produces calculating in 22 days the moon.Moon power consumption 91 × 8 × 22=16016KW, the total amount that manufactures a finished product by the moon is: 30800 × 8 × 22=5420800 only.
Calculate on lead frame materials of the present invention according to above-mentioned data and contrast will save 65.13% with traditional structure lead frame materials, productivity effect will improve 40%, save the energy 28.6%.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (3)
1. a photoelectric coupler lead frame, include the lead frame unit (1) of multiple matrix arrangement, each described lead frame unit (1) comprise be respectively used to installation infrared light transmitting chip and infrared light receiving chip can relative the first chip attach portion (11) of bending and the second chip attach portion (12), and first die bond bonding wire portion (13) and the second die bond bonding wire portion (14), described first chip attach portion (11) is connected with positive pole pin (15) and negative pole pin (16) respectively with the first die bond bonding wire portion (13), described second chip attach portion (12) is connected with collector electrode pin (17) and emitter pin (18) respectively with the second die bond bonding wire portion (14), it is characterized in that: this lead frame is made through punching and plating by sheet metal strip, each described lead frame unit (1) also comprises and to be oppositely arranged and the first quadra jaggy and the second quadra are established in middle, opposite end, described first chip attach portion (11) and the first die bond bonding wire portion (13) are separately positioned on the first quadra of breach both sides, and the first chip attach portion (11) is positioned at the first quadra, described second chip attach portion (12) and the second die bond bonding wire portion (14) are separately positioned on the second quadra of breach both sides, and the second chip attach portion (12) is positioned at the second quadra.
2. a photoelectrical coupler, it is characterized in that: include the lead frame unit (1) of the photoelectric coupler lead frame described in the claims 1 of encapsulation one, infrared light emission chip (2) and infrared light receiving chip (3), first chip attach portion (11) of described lead frame unit (1) with (12) bending of the second chip attach portion and parallel relatively, perpendicular to described lead frame unit (1); Described infrared light emission chip (2) and infrared light receiving chip (3) are located in described first chip attach portion (11) and the second chip attach portion (12) respectively, in left and right correlation, and be connected by the first die bond bonding wire portion (13) of wire (4) and described lead frame unit (1) and the second die bond bonding wire portion (14).
3. photoelectrical coupler according to claim 2, it is characterized in that: described infrared light emission chip (2) and infrared light receiving chip (3) are GaAs LED chip and phototriode respectively, and described wire (4) is gold thread.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210226339.4A CN102723321B (en) | 2012-07-03 | 2012-07-03 | A kind of photoelectric coupler lead frame and photoelectrical coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210226339.4A CN102723321B (en) | 2012-07-03 | 2012-07-03 | A kind of photoelectric coupler lead frame and photoelectrical coupler |
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| CN102723321A CN102723321A (en) | 2012-10-10 |
| CN102723321B true CN102723321B (en) | 2015-09-23 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104332451B (en) * | 2014-11-24 | 2017-02-22 | 深圳市富美达五金有限公司 | Optocoupler packaging support |
| CN105161486B (en) * | 2015-09-28 | 2018-04-13 | 兰州文理学院 | Tetracarboxylic acid dianhydride organic layer photoelectrical coupler and preparation method thereof |
| CN106332450A (en) * | 2016-08-31 | 2017-01-11 | 王欣 | Conductor hollow circuit board and manufacturing method |
| CN107911106A (en) * | 2017-12-12 | 2018-04-13 | 无锡豪帮高科股份有限公司 | A kind of light coupling relay of anti-vibration |
| CN109860138A (en) * | 2018-12-14 | 2019-06-07 | 华润半导体（深圳）有限公司 | Bracket, the long production method for climbing electric light electric coupler and length climb electric light electric coupler |
| CN112349672A (en) * | 2020-10-14 | 2021-02-09 | 珠海市大鹏电子科技有限公司 | Lead frame for photoelectric coupler and photoelectric coupler thereof |
| CN112259534A (en) * | 2020-12-21 | 2021-01-22 | 宁波群芯微电子有限责任公司 | Photoelectric coupler and forming method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02186680A (en) * | 1989-11-30 | 1990-07-20 | New Japan Radio Co Ltd | Manufacture of optically coupled semiconductor device |
| JP2000114587A (en) * | 1998-10-05 | 2000-04-21 | Sharp Corp | Optically coupled device and manufacture thereof |
| JP2004072036A (en) * | 2002-08-09 | 2004-03-04 | Sharp Corp | Optical coupler, its manufacturing method, and electronic equipment using it |
| CN1518131A (en) * | 2003-01-17 | 2004-08-04 | ������������ʽ���� | Photoelectrical coupling semiconductor device and its manufacturing method |
| JP2008124272A (en) * | 2006-11-13 | 2008-05-29 | Toshiba Corp | Lead frame and optical coupler device using the same |
-
2012
- 2012-07-03 CN CN201210226339.4A patent/CN102723321B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02186680A (en) * | 1989-11-30 | 1990-07-20 | New Japan Radio Co Ltd | Manufacture of optically coupled semiconductor device |
| JP2000114587A (en) * | 1998-10-05 | 2000-04-21 | Sharp Corp | Optically coupled device and manufacture thereof |
| JP2004072036A (en) * | 2002-08-09 | 2004-03-04 | Sharp Corp | Optical coupler, its manufacturing method, and electronic equipment using it |
| CN1518131A (en) * | 2003-01-17 | 2004-08-04 | ������������ʽ���� | Photoelectrical coupling semiconductor device and its manufacturing method |
| JP2008124272A (en) * | 2006-11-13 | 2008-05-29 | Toshiba Corp | Lead frame and optical coupler device using the same |
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| CN102723321A (en) | 2012-10-10 |
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Effective date of registration: 20170111 Address after: 519000 Guangdong Province, Zhuhai city Doumen District Industrial Zone. Patentee after: Zhuhai Dapeng Electronic Technology Co. Ltd. Address before: 519000 Guangdong province Zhuhai City Dapeng Industrial Zone, Doumen District Huang Yang Electronic Technology Co. Ltd. Patentee before: Huang Weipeng |