CN108682657B - High-power solid-state relay packaging structure - Google Patents

High-power solid-state relay packaging structure Download PDF

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Publication number
CN108682657B
CN108682657B CN201810756339.2A CN201810756339A CN108682657B CN 108682657 B CN108682657 B CN 108682657B CN 201810756339 A CN201810756339 A CN 201810756339A CN 108682657 B CN108682657 B CN 108682657B
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Prior art keywords
chip
island
output
carrying
state relay
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CN201810756339.2A
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CN108682657A (en
Inventor
袁宏承
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Wuxi Honghu Microelectronics Co ltd
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Wuxi Honghu Microelectronics Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

The invention relates to a high-power solid-state relay packaging structure, which comprises a lead frame, wherein a plastic package body is wrapped outside the lead frame, the lead frame comprises a first, a second and a third chip carrying islands and an output wire bonding island, the first chip carrying island is connected with a first outer lead pin, the third chip carrying island is connected with a fourth outer lead pin, the output wire bonding island is connected with a second lead pin, an output chip is arranged on the first chip carrying island, the area of the first chip carrying island is larger, a photoelectric conversion chip is arranged on the second chip carrying island, a light control chip is arranged on the third chip carrying island, the second chip carrying island and the third chip carrying island are adjacently arranged, the photoelectric conversion chip is bonded with the output chip, the light control chip is bonded with a third outer lead pin, the output chip is bonded with the output wire bonding island, the first and the second lead pins are two terminals of an output switch, and the third and the fourth outer lead pins are two terminals of a control terminal.

Description

High-power solid-state relay packaging structure
Technical Field
The invention relates to the field of semiconductor devices and integrated circuit packaging, in particular to a high-power solid-state relay packaging structure.
Background
The traditional relay is a contact relay, contacts are easy to spark in the working process of a product, the service life is short, potential safety hazards exist, in addition, the response time of the relay is slow, interference is easy to generate between input and output, and the high-power solid-state relay realized by adopting a semiconductor packaging technology can effectively solve the problems.
In the semiconductor packaging technology, in order to prevent corrosion of chip circuits by impurities or moisture in the air from affecting performance, the chips need to be packaged; on the other hand, the packaged chip is more convenient to install and transport.
In the prior art, the heat dissipation of the multi-chip package and the packaged product has the technical difficulties that the bonding strength between the plastic package body and the copper-based island is not enough to easily cause layering between the plastic package body and the copper-based island, the light source cannot be transmitted in the plastic package body, and the like.
Disclosure of Invention
The applicant has made research and improvement to the above drawbacks, and provides a high-power solid-state relay packaging structure.
The technical scheme adopted by the invention is as follows:
the utility model provides a high-power solid-state relay packaging structure, includes plastic envelope body and lead frame, the plastic envelope body parcel is in the lead frame outside, the lead frame includes first, second, third carrier island and output wire bonding island, first outer lead foot is connected to first carrier island, and fourth outer lead foot is connected to third carrier island, the second lead foot is connected to output wire bonding island, install output chip on the first carrier island, and first carrier island area is great, install photoelectric conversion chip on the second carrier island, the light-operated chip is installed to the third carrier island, second carrier island and third carrier island are adjacent to be set up, photoelectric conversion chip bonds output chip, light-operated chip bonds third outer lead foot, output chip and output wire bonding island bond, first, second lead foot are output switch's two terminals, third, fourth outer lead foot are two terminals of control end.
As a further improvement of the above technical scheme:
the first, second and third slide islands and the output wire bonding island are respectively provided with a through hole, the through holes on the first slide island and the output wire bonding island are square holes, and the through holes on the second and third slide islands are round holes.
The output routing island is provided with a bonding region with a larger area.
Transparent glue is wrapped outside the light control chip and the photoelectric conversion chip.
And semicircular positioning holes are formed in two sides of the plastic package body.
The beneficial effects of the invention are as follows:
1. the control chip, the signal conversion chip and the output chip are arranged on the same layer, so that the frame can be punched at one time; the packaging of the packaging sheet and the bonding can be completed at one time, so that the production efficiency is greatly improved;
2. the control chip and the signal conversion chip are relatively close in chip mounting, so that the conversion chip can effectively receive the light source, and the quick response of the conversion chip is ensured;
3. the first, second and third slide islands and the output wire bonding island are respectively provided with a through hole, so that the bonding strength of the plastic package body and the lead frame can be enhanced;
4. the arrangement area of the output chip mounting area is larger, so that the multi-chip mounting of the silicon controlled rectifier and the MOS tube can be realized, and meanwhile, the large-area heat dissipation capacity is large, and the high-power output requirement of the product is met;
5. the arrangement area of the output wire bonding island area is larger, so that the bonding of a plurality of copper wires, gold wires and aluminum wires can be realized, and meanwhile, the bonding of an aluminum belt and a copper belt can be met, and the high-power output requirement of a product is met;
6. the semicircular positioning holes are formed in the two sides of the plastic package body, and the final product after plastic package can be accurately positioned on the radiating fin.
Drawings
Fig. 1 is a front view of a high power solid state relay package structure of the present invention.
Fig. 2 is a structural view of the high-power solid state relay package structure of the present invention.
In the figure: 1. a plastic package body; 11. a semicircular positioning hole; 2. a lead frame; 21. a first slide island; 22. a second slide island; 23. a third carrier island; 24. outputting a wire bonding island; 25. a first outer terminal pin; 26. second outer terminal pin; 27. a third outer terminal pin; 28. fourth terminal pin; 3. an output chip; 4. a photoelectric conversion chip; 5. a light control chip; 6. square holes; 7. a circular hole.
Detailed Description
The following describes the embodiment of the present embodiment with reference to the drawings
As shown in fig. 1 and 2, the high-power solid-state relay package structure of the embodiment comprises a plastic package body 1 and a lead frame 2, wherein the plastic package body 1 is wrapped outside the lead frame 2, semicircular positioning holes 11 are arranged at two sides of the plastic package body 1, the semicircular positioning holes 11 are used for fixing products on radiating fins, the lead frame 2 comprises a first carrier island 21, a second carrier island 21, a third carrier island 22, a 23 and an output routing island 24, the first carrier island 21 is connected with a first outer lead pin 25, the third carrier island 23 is connected with a fourth outer lead pin 28, the output routing island 24 is connected with a second lead pin 26, an output chip 3 is mounted on the first carrier island 21, the area of the first carrier island 21 is larger, the multi-chip package of a silicon controlled rectifier and a MOS tube can be realized, the area is large, the high-power output requirement of the products is met, a photoelectric conversion chip 4 is mounted on the second carrier island 22, the light control chip 5 is installed to the third slide glass island 23, and the light control chip 5 bonds the third outer lead pin 27, the second slide glass island 22 and the third slide glass island 23 are adjacent to be set up, the photoelectric conversion chip 4 and the transparent adhesive tape used for protection wrap up in the light control chip 5 outside, form a light channel between photoelectric conversion chip 4 and the light control chip 5, the transmission of light is convenient for, the photoelectric conversion chip 4 bonds output chip 3, output chip 3 bonds with output routing island 24, output routing island 24 is provided with the bonding area of great area, can realize many copper lines, gold thread, aluminium wire bonding, also can satisfy aluminium strip and copper strips bonding simultaneously, satisfy the high-power output requirement of product, first, second lead pin 25, 26 are two terminals of output switch, third, fourth outer lead pin 27, 28 are two terminals of control end.
Through holes are formed in the first, second and third carrier islands 21, 22 and 23 and the output wire bonding island 24, the through holes in the first carrier island 21 and the output wire bonding island 24 are square holes 6, the through holes in the second and third carrier islands 22 and 23 are round holes 7, the round holes 7 are also formed in the third outer lead pins 27, the bonding strength of the plastic package body 1 and the lead frame 2 can be enhanced, and layering phenomenon can be avoided.
When the high-power solid-state relay packaging structure is used, the third and fourth outer lead pins 27 and 28 input control signals to control the light control chip 5 to be turned on or off, the photoelectric conversion chip 4 converts the on or off signals of the light control chip 5 into electric signals to be transmitted to the output chip 3 to control the output chip 3 to be turned on or off, and the on or off signals of the output chip 3 can be output through the first and second lead pins 25 and 26.
The above description is illustrative of the invention and not limiting, the scope of the invention being defined by the appended claims, which may be modified in any manner without departing from the basic structure of the invention.

Claims (5)

1. A high-power solid-state relay packaging structure is characterized in that: including plastic envelope body (1) and lead frame (2), plastic envelope body (1) parcel is in the lead frame (2) outside, lead frame (2) are including first, second, third chip-carrying island (21, 22, 23) and output wire bonding island (24), all set up the through-hole on first, second, third chip-carrying island (21, 22, 23) and the output wire bonding island (24), first outer lead foot (25) are connected in first chip-carrying island (21), fourth outer lead foot (28) are connected in third chip-carrying island (23), second lead foot (26) are connected in output wire bonding island (24), install output chip (3) on first chip-carrying island (21), and first chip-carrying island (21) area is great, install photoelectric conversion chip (4) on second chip-carrying island (22), light-operated chip (5) are installed in third chip-carrying island (23), second chip-carrying island (22) and third chip-carrying island (23) are adjacent to be connected first outer lead foot (25), output chip (27), second lead foot (26) are connected in output chip-carrying island (24), output chip (27, third lead foot (27) are connected in output wire bonding terminal (24) 28 Is the two terminals of the control end.
2. The high power solid state relay package structure of claim 1, wherein: the through holes on the first carrier islands (21) and the output routing islands (24) are square holes (6), and the through holes on the second carrier islands and the third carrier islands (22, 23) are round holes (7).
3. The high power solid state relay package structure of claim 1, wherein: the output routing islands (24) are provided with a larger area bonding area.
4. The high power solid state relay package structure of claim 1, wherein: transparent glue is wrapped outside the light control chip (5) and the photoelectric conversion chip (4).
5. The high power solid state relay package structure of claim 1, wherein: semicircular positioning holes (11) are formed in two sides of the plastic package body (1).
CN201810756339.2A 2018-07-12 2018-07-12 High-power solid-state relay packaging structure Active CN108682657B (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007317718A (en) * 2006-05-23 2007-12-06 Nec Electronics Corp Wire-bonding structure and its manufacturing method, and semiconductor relay provided therewith and manufacturing method therefor
CN102543770A (en) * 2012-01-18 2012-07-04 浙江阳光照明电器集团股份有限公司 Encapsulation method of special half-bridge drive integrated circuit of compact fluorescent lamp
CN205984966U (en) * 2016-07-12 2017-02-22 无锡新洁能股份有限公司 Big current power semiconductor device's packaging structure
CN106952888A (en) * 2017-04-21 2017-07-14 无锡市宏湖微电子有限公司 Lead frame for biradical island encapsulated circuit
CN107452704A (en) * 2017-09-06 2017-12-08 深圳市矽莱克半导体有限公司 The semiconductor device and its lead frame of Series Package
CN208478318U (en) * 2018-07-12 2019-02-05 无锡市宏湖微电子有限公司 A kind of high power solid state relay package structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100193920A1 (en) * 2009-01-30 2010-08-05 Infineon Technologies Ag Semiconductor device, leadframe and method of encapsulating

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007317718A (en) * 2006-05-23 2007-12-06 Nec Electronics Corp Wire-bonding structure and its manufacturing method, and semiconductor relay provided therewith and manufacturing method therefor
CN102543770A (en) * 2012-01-18 2012-07-04 浙江阳光照明电器集团股份有限公司 Encapsulation method of special half-bridge drive integrated circuit of compact fluorescent lamp
CN205984966U (en) * 2016-07-12 2017-02-22 无锡新洁能股份有限公司 Big current power semiconductor device's packaging structure
CN106952888A (en) * 2017-04-21 2017-07-14 无锡市宏湖微电子有限公司 Lead frame for biradical island encapsulated circuit
CN107452704A (en) * 2017-09-06 2017-12-08 深圳市矽莱克半导体有限公司 The semiconductor device and its lead frame of Series Package
CN208478318U (en) * 2018-07-12 2019-02-05 无锡市宏湖微电子有限公司 A kind of high power solid state relay package structure

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