CN102723271A - Method for forming silicon dioxide side wall with uniform thickness - Google Patents
Method for forming silicon dioxide side wall with uniform thickness Download PDFInfo
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- CN102723271A CN102723271A CN2012102045065A CN201210204506A CN102723271A CN 102723271 A CN102723271 A CN 102723271A CN 2012102045065 A CN2012102045065 A CN 2012102045065A CN 201210204506 A CN201210204506 A CN 201210204506A CN 102723271 A CN102723271 A CN 102723271A
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- side wall
- oxide layer
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Abstract
The invention provides a method for forming a silicon dioxide side wall with a uniform thickness, comprising the following steps: firstly, depositing a side wall oxide layer on the surfaces of a plurality of formed grid devices respectively; etching the formed side wall oxide layers to open seals formed between each two grids on the device in the deposition process; depositing a side wall oxide layer on each formed side wall oxide layer, and etching the formed side oxide layers again; and repeating the deposition and etching process of the side wall oxide layers till the thickness of the formed side wall oxide layers reaches the target thickness, wherein the etching is performed by an in-situ NF3 plus NH3 plasma.
Description
Technical field
The present invention relates to integrated circuit and make the field, relate in particular to a kind of method that forms the even silicon dioxide side wall of thickness at device surface.
Background technology
Side wall (Spacer) is that industry is made an essential structure of semiconductor CMOS device, and it not only can protect grid, and shallow doping (LDD) technology can also reduce short-channel effect well in the collocation.
So far; The composite bed of more employing silicon dioxide of traditional side wall technology and silicon nitride (wherein silicon nitride is outer); To 65 nanometer technologies and when following, require increasingly highly for the deposition of silica membrane, not only need low temperature depositing processing procedure (< 300 ~ 600 ℃); Also need good uniformity; Especially high for zones of different (big live width place is like single polycrystalline gate region and little live width place, like the polycrystalline gate region of static memory SRAM) sidewall thickness uniformity requirement.In general, the silica membrane of common boiler tube deposition, 650 ℃ of its depositing temperatures higher (>) uniformity is better, but can not satisfy the requirement of the heat budget of device.
In the processing procedure of 65 nanometers or littler linewidth requirements; The bottleneck of meeting that little live width place deposits with respect to big live width figure conformal silicon nitride: little live width place is along with the carrying out of silica deposit; Angle place's formation suspension film (overhang) is more and more thicker on the both sides of the polycrystalline grid at little live width place, and the deposition of sidewall and bottom is fewer and feweri, is connected to form until the suspension film and seals the increase that has stopped thickness; And the big live width place of right figure not can, can continue the deposition.Under the situation of same increase thickness, the film thickness uniformity in two kinds of zones will have greatest differences like this.
Summary of the invention
The present invention is directed to the weak point that exists in the prior art, propose a kind of improvement scheme, form the uniform silicon dioxide side wall of thickness at device surface through easy method.
To achieve these goals, the present invention provides a kind of method that forms the even silicon dioxide side wall of thickness, may further comprise the steps: at first, forming surface deposition one deck side wall oxide layer of a plurality of gated devices; Side wall oxide layer to forming is carried out etching, makes to be formed at that sealing between the grid is opened on the device in the deposition process; Deposition one deck side wall oxide layer is carried out etching to the side wall oxide layer that forms once more on the side wall oxide layer that forms before; Repeat the deposition and the etching process of above-mentioned side wall oxide layer, reach target thickness until formed side wall thickness of oxide layer; Wherein, said etching is selected original position NF for use
3+ NH
3Plasma etching.
In a preferred embodiment provided by the invention, wherein said side wall oxide layer is formed by the silicon dioxide of deposition.
In a preferred embodiment provided by the invention, wherein said deposition side wall oxide layer is carried out at low temperatures.
Adopt low temperature depositing silicon dioxide in the method provided by the invention; Carrying out along with deposition; Place, angle formation suspension film is more and more thicker on the both sides of the polycrystalline grid at little live width place; The deposition of sidewall and bottom is fewer and feweri, is connected to form until the suspension film and seals the increase that has stopped thickness, uses original position NF subsequently
3+ NH
3Plasma-etching method (directly in reaction chamber, producing plasma) goes to open sealing of polycrystalline grid place; Also can remove certain thickness silicon dioxide simultaneously in zone, big live width place; Reduce the difference in thickness in these two zones; Carry out low temperature depositing silicon dioxide and plasma etching subsequently once more, the several cycles of going round and beginning again like this finishes after reaching target thickness.
Cause zones of different membrane thickness unevenness property, especially sidewall sections owing to place, angle on the both sides of device polycrystalline gate region forms the suspension film and links to each other to form to seal, also can improve the thickness evenness of follow-up low temperature depositing silica membrane simultaneously.This method had both improved the uniformity of zones of different thickness, did not influence the heat budget of device again.
Description of drawings
Fig. 1 is the structural representation after the side wall of the completion deposition for the first time oxide layer in the embodiment of the invention.
Fig. 2 is for the first time to structural representation after the side wall oxide layer etching of deposition formation in the embodiment of the invention.
Fig. 3 is the structure after the side wall of the completion deposition once more oxide layer in the embodiment of the invention.
Fig. 4 is the structural representation behind the uniform silicon dioxide side wall of formation thickness in the embodiment of the invention.
Embodiment
The present invention provides a kind of method that forms the even silicon dioxide side wall of thickness, at first, is forming surface deposition one deck side wall oxide layer of a plurality of gated devices; Side wall oxide layer to forming is carried out etching, makes that sealing of grid place is opened on the device; Deposition one deck side wall oxide layer is carried out etching to the side wall oxide layer that forms once more on the side wall oxide layer that forms before; Repeat the deposition and the etching process of above-mentioned side wall oxide layer, reach target thickness until formed side wall thickness of oxide layer.
Below through embodiment method provided by the invention is explained further details so that better understand the content of the invention, but the content of embodiment does not limit the protection range of the invention.
Among the present invention at device surface with low temperature depositing silicon dioxide layer 11; Carrying out along with deposition; Place, angle formation suspension film is more and more thicker on the both sides of the polycrystalline grid at little live width place; The deposition of sidewall and bottom is fewer and feweri, is connected to form until the suspension film and seals the increase that has stopped thickness, uses original position NF subsequently
3+ NH
3Plasma-etching method (directly in reaction chamber, producing plasma) goes to open the sealing of polycrystalline grid place of static memory SRAM; Also can remove certain thickness silicon dioxide layer 11 simultaneously in zone, big live width place; Reduce the difference in thickness in these two zones, carry out 1 layer of low temperature depositing silica 1 and original position NF subsequently once more
3+ NH
3Plasma etching, the several cycles of going round and beginning again like this finishes after reaching target thickness.That is to say, can improve the thickness consistency of little live width and big these two zoness of different of live width so greatly, also can improve the thickness evenness of follow-up low temperature depositing silica membrane 11 simultaneously.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (3)
1. a method that forms the even silicon dioxide side wall of thickness is characterized in that, may further comprise the steps:
At first, forming surface deposition one deck side wall oxide layer of a plurality of gated devices; Side wall oxide layer to forming is carried out etching, makes to be formed at that sealing between the grid is opened on the device in the deposition process; Deposition one deck side wall oxide layer is carried out etching to the side wall oxide layer that forms once more on the side wall oxide layer that forms before; Repeat the deposition and the etching process of above-mentioned side wall oxide layer, reach target thickness until formed side wall thickness of oxide layer;
Wherein, said etching is selected original position NF for use
3+ NH
3Plasma etching.
2. method according to claim 1 is characterized in that, said side wall oxide layer is formed by the silicon dioxide of deposition.
3. method according to claim 1 is characterized in that, said deposition side wall oxide layer is carried out at low temperatures.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210204506.5A CN102723271B (en) | 2012-06-20 | 2012-06-20 | Method for forming silicon dioxide side wall with uniform thickness |
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| CN201210204506.5A CN102723271B (en) | 2012-06-20 | 2012-06-20 | Method for forming silicon dioxide side wall with uniform thickness |
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| CN102723271A true CN102723271A (en) | 2012-10-10 |
| CN102723271B CN102723271B (en) | 2015-03-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447519A (en) * | 2019-09-04 | 2021-03-05 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909195A (en) * | 2005-08-05 | 2007-02-07 | 上海华虹Nec电子有限公司 | Flank wall making method |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909195A (en) * | 2005-08-05 | 2007-02-07 | 上海华虹Nec电子有限公司 | Flank wall making method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447519A (en) * | 2019-09-04 | 2021-03-05 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor device |
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| CN102723271B (en) | 2015-03-18 |
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